Yasushi Akasaka

Person

3-393, Koyasu-dori, Kanagawa-ku, Yokohama-shi, Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing semiconductor device using dummy gate wirin...
- Patent number 7,772,076
- Issue date Aug 10, 2010
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an element isolating insulating film
- Patent number 7,772,671
- Issue date Aug 10, 2010
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 7,432,147
- Issue date Oct 7, 2008
- Kabushiki Kaisha Toshiba
- Yasushi Akasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,285,461
- Issue date Oct 23, 2007
- Kabushiki Kaisha Toshiba
- Yasushi Akasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 7,232,751
- Issue date Jun 19, 2007
- Kabushiki Kaisha Toshiba
- Yasushi Akasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,208,797
- Issue date Apr 24, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low threshold voltage semiconductor device
- Patent number 7,078,776
- Issue date Jul 18, 2006
- Kabushiki Kaisha Toshiba
- Kazumi Nishinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing
- Patent number 6,989,316
- Issue date Jan 24, 2006
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,956,259
- Issue date Oct 18, 2005
- Kabushiki Kaisha Toshiba
- Yasushi Akasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device having gate electrode w...
- Patent number 6,939,787
- Issue date Sep 6, 2005
- Fujitsu Limited
- Fumio Ohtake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 6,893,980
- Issue date May 17, 2005
- Kabushiki Kaisha Toshiba
- Yasushi Akasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having counter and channel impurity regions
- Patent number 6,770,944
- Issue date Aug 3, 2004
- Kabushiki Kaisha Toshiba
- Kazumi Nishinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,617,226
- Issue date Sep 9, 2003
- Kabushiki Kaisha Toshiba
- Kyoioni Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,541,829
- Issue date Apr 1, 2003
- Kabushiki Kaisha Toshiba
- Kazumi Nishinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,346,438
- Issue date Feb 12, 2002
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 6,162,741
- Issue date Dec 19, 2000
- Kabushiki Kaisha Toshiba
- Yasushi Akasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,133,150
- Issue date Oct 17, 2000
- Kabushiki Kaisha Toshiba
- Kazuaki Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,100,193
- Issue date Aug 8, 2000
- Kabushiki Kaisha Toshiba
- Shintaro Suehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with conductive oxidation preventing film and...
- Patent number 5,907,188
- Issue date May 25, 1999
- Kabushiki Kaisha Toshiba
- Kazuaki Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,903,027
- Issue date May 11, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,903,053
- Issue date May 11, 1999
- Kabushiki Kaisha Toshiba
- Tadashi Iijima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having solid phase diffusion sources
- Patent number 5,898,203
- Issue date Apr 27, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,766,965
- Issue date Jun 16, 1998
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device wiring or electrode
- Patent number 5,719,410
- Issue date Feb 17, 1998
- Kabushiki Kaisha Toshiba
- Shintaro Suehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,698,881
- Issue date Dec 16, 1997
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,434,440
- Issue date Jul 18, 1995
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device having an element isolating insulating film
- Publication number 20080224252
- Publication date Sep 18, 2008
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20070172997
- Publication date Jul 26, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20060166427
- Publication date Jul 27, 2006
- Yasushi Akasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060011950
- Publication date Jan 19, 2006
- Kabushiki Kaisha Toshiba
- Yasushi Akasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method therefor
- Publication number 20050130418
- Publication date Jun 16, 2005
- KABUSHIKI KAISHA TOSHIBA
- Yasushi Akasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having gate electrodes with polymetal structur...
- Publication number 20050062115
- Publication date Mar 24, 2005
- FUJITSU LIMITED
- Fumio Ohtake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040238883
- Publication date Dec 2, 2004
- KABUSHIKI KAISHA TOSHIBA
- Kazumi Nishinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20040070045
- Publication date Apr 15, 2004
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040026727
- Publication date Feb 12, 2004
- Yasushi Akasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing
- Publication number 20030211713
- Publication date Nov 13, 2003
- Kabushiki Kaisha Toshiba
- Kyoichi Suguro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20030122203
- Publication date Jul 3, 2003
- Kabushiki Kaisha Toshiba
- Kazumi Nishinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020056874
- Publication date May 16, 2002
- Fumio Ohtake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020045296
- Publication date Apr 18, 2002
- Kabushika Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20010009292
- Publication date Jul 26, 2001
- Kabushiki Kaisha Toshiba
- Kazumi Nishinohara
- H01 - BASIC ELECTRIC ELEMENTS

Yasushi Akasaka

Person

Patents Grantslast 30 patents

Method of manufacturing semiconductor device using dummy gate wirin...

Semiconductor device having an element isolating insulating film

Method of manufacturing semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method therefor

Semiconductor device

Low threshold voltage semiconductor device

Semiconductor device and method for manufacturing

Semiconductor device and method of manufacturing the same

Method for fabricating semiconductor device having gate electrode w...

Semiconductor device and manufacturing method therefor

Semiconductor device having counter and channel impurity regions

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing the same

Method of manufacturing a semiconductor device

Semiconductor device and manufacturing method therefor

Semiconductor device and method for manufacturing the same

Method of manufacturing a semiconductor device

Semiconductor device with conductive oxidation preventing film and...

MOSFET with solid phase diffusion source

Semiconductor device

Semiconductor device having solid phase diffusion sources

Semiconductor device and method of manufacturing the same

Semiconductor device wiring or electrode

MOSFET with solid phase diffusion source

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

Semiconductor device having an element isolating insulating film

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method therefor

Semiconductor device having gate electrodes with polymetal structur...

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing

Semiconductor device and method of manufacturing the same

Semiconductor device and method for fabricating the same

Semiconductor device

Semiconductor device and method of manufacturing the same