Yoshinao KUMAGAI

Person

Fuchu-shi, Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for growing beta-Ga2O3-based single crystal film, and crysta...
- Patent number 11,982,016
- Issue date May 14, 2024
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal laminate structure
- Patent number 11,047,067
- Issue date Jun 29, 2021
- Tamura Corporation
- Ken Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate, and epitaxial wafer and method for produci...
- Patent number 10,985,016
- Issue date Apr 20, 2021
- Tamura Corporation
- Ken Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor element and crystalline laminate structure
- Patent number 10,861,945
- Issue date Dec 8, 2020
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride laminate and vertical semiconductor device having...
- Patent number 10,731,274
- Issue date Aug 4, 2020
- Stanley Electric Co., Ltd.
- Yoshinao Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, epitaxial wafer, and method for manufactur...
- Patent number 10,676,841
- Issue date Jun 9, 2020
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal laminate structure
- Patent number 10,538,862
- Issue date Jan 21, 2020
- Tamura Corporation
- Ken Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage withstand Ga2O3-based single crystal schottky barrier...
- Patent number 10,199,512
- Issue date Feb 5, 2019
- Tamura Corporation
- Kohei Sasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor crystal, manufacturing method and manufacturi...
- Patent number 10,125,433
- Issue date Nov 13, 2018
- National University Corporation Tokyo
- Akinori Koukitu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium gallium nitride light emitting devices
- Patent number 9,978,904
- Issue date May 22, 2018
- Soraa, Inc.
- Michael R. Krames
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly transparent aluminum nitride single crystalline layers and d...
- Patent number 9,840,790
- Issue date Dec 12, 2017
- Hexatech, Inc.
- Akinori Koukitu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for manufacturing aluminum-based group III nitride single cr...
- Patent number 9,708,733
- Issue date Jul 18, 2017
- Tokuyama Corporation
- Akinori Koukitsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-cystalline aluminum nitride substrate and a manufacturing me...
- Patent number 9,691,942
- Issue date Jun 27, 2017
- National University Corporation Tokyo University of Agriculture and Technology
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Grant
ZnO film production system and production method using ZnO film pro...
- Patent number 9,611,545
- Issue date Apr 4, 2017
- Tokyo Electron Limited
- Song yun Kang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing gallium trichloride gas and method for produci...
- Patent number 9,281,180
- Issue date Mar 8, 2016
- National University Corporation Tokyo University of Agriculture
- Akinori Koukitu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of producing a group III nitride crystal
- Patent number 8,926,752
- Issue date Jan 6, 2015
- Tokuyama Corporation
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth method of a zinc oxide based semiconductor layer,...
- Patent number 8,822,263
- Issue date Sep 2, 2014
- National University Corporation Tokyo University of Agriculture and Technology
- Akinori Koukitu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
n-Type conductive aluminum nitride semiconductor crystal and manufa...
- Patent number 8,129,208
- Issue date Mar 6, 2012
- Tokuyama Corporation
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate and gallium nitride layer formation method
- Patent number 7,915,149
- Issue date Mar 29, 2011
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride baseplate and epitaxial substrate
- Patent number 7,843,040
- Issue date Nov 30, 2010
- Sumitomo Electric Industries, Ltd.
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase growth method for A1-containing III-V group compound se...
- Patent number 7,645,340
- Issue date Jan 12, 2010
- Tokyo University Agriculture and Technology TLO Co., Ltd.
- Akinori Koukitu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for AlGan vapor phase growth
- Patent number 7,621,999
- Issue date Nov 24, 2009
- Tokyo University of Agriculture and Technology TLO Co., Ltd.
- Akinori Koukitu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride baseplate, epitaxial substrate, and method of formi...
- Patent number 7,518,216
- Issue date Apr 14, 2009
- Sumitomo Electric Industries, Ltd.
- Akinori Koukitu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CRYSTAL LAMINATION STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF M...
- Publication number 20240352619
- Publication date Oct 24, 2024
- Mitsubishi Electric Corporation
- Yohei YUDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...
- Publication number 20210404086
- Publication date Dec 30, 2021
- TAMURA CORPORATION
- Ken GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, AND EPITAXIAL WAFER AND METHOD FOR PRODUCI...
- Publication number 20200243332
- Publication date Jul 30, 2020
- TAMURA CORPORATION
- Ken GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL LAMINATE STRUCTURE
- Publication number 20200102667
- Publication date Apr 2, 2020
- TAMURA CORPORATION
- Ken GOTO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROUP III NITRIDE LAMINATE AND VERTICAL SEMICONDUCTOR DEVICE HAVING...
- Publication number 20190323146
- Publication date Oct 24, 2019
- STANLEY ELECTRIC CO., LTD
- Yoshinao KUMAGAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES
- Publication number 20180269351
- Publication date Sep 20, 2018
- Soraa, Inc.
- Michael R. KRAMES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE
- Publication number 20180254355
- Publication date Sep 6, 2018
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL LAMINATE STRUCTURE
- Publication number 20180073164
- Publication date Mar 15, 2018
- TAMURA CORPORATION
- Ken GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR ELEMENT AND CRYSTALLINE LAMINATE STRUCTURE
- Publication number 20170278933
- Publication date Sep 28, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, EPITAXIAL WAFER, AND METHOD FOR MANUFACTUR...
- Publication number 20170145590
- Publication date May 25, 2017
- TAMURA CORPORATION
- Ken GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...
- Publication number 20160265137
- Publication date Sep 15, 2016
- TAMURA CORPORATION
- Ken GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD AND MANUFACTURI...
- Publication number 20160186361
- Publication date Jun 30, 2016
- NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
- Akinori KOUKITU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING ALUMINUM-BASED GROUP III NITRIDE SINGLE CR...
- Publication number 20160108554
- Publication date Apr 21, 2016
- Tokuyama Corporation
- Akinori KOUKITSU
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND D...
- Publication number 20150247260
- Publication date Sep 3, 2015
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
ZnO FILM PRODUCTION DEVICE, AND PRODUCTION METHOD
- Publication number 20150225846
- Publication date Aug 13, 2015
- TOKYO ELECTRON LIMITED
- Song yun Kang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Single-Crystalline Aluminum Nitride Substrate and a Manufacturing M...
- Publication number 20140346638
- Publication date Nov 27, 2014
- Tokuyama Corporation
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES
- Publication number 20140103356
- Publication date Apr 17, 2014
- Soraa, Inc.
- Michael R. KRAMES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING GALLIUM TRICHLORIDE GAS AND METHOD FOR PRODUCI...
- Publication number 20130130477
- Publication date May 23, 2013
- NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
- Akinori Koukuti
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF
- Publication number 20110094438
- Publication date Apr 28, 2011
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NIT...
- Publication number 20110018104
- Publication date Jan 27, 2011
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFA...
- Publication number 20100320462
- Publication date Dec 23, 2010
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL
- Publication number 20100093124
- Publication date Apr 15, 2010
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL GROWTH METHOD, EPITAXIAL CRYSTAL STRUCTURE, EPITAXIAL CRY...
- Publication number 20100006836
- Publication date Jan 14, 2010
- Natinal University Corporation Tokyo University of Agriculture and Technology
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Baseplate and Epitaxial Substrate
- Publication number 20090079036
- Publication date Mar 26, 2009
- Sumitomo Electric Industries, Ltd.
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND GALLIUM NITRIDE LAYER FORMATION METHOD
- Publication number 20080308814
- Publication date Dec 18, 2008
- Sumitomo Electric Industries, Ltd.
- Seiji NAKAHATA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method And Apparatus For Algan Vapor Phase Growth
- Publication number 20080063584
- Publication date Mar 13, 2008
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Baseplate, Epitaxial Substrate, and Method of Formi...
- Publication number 20070215982
- Publication date Sep 20, 2007
- Sumitomo Electric Industries, Ltd.
- Akinori Koukitu
- C30 - CRYSTAL GROWTH
Information Patent Application
Vapor phase growth method for al-containing III-V group compound se...
- Publication number 20050166835
- Publication date Aug 4, 2005
- TOKYO UNIVERSITY AGRICULTURE AND TECHNOLOGY TLO CO
- Akinori Koukitsu
- C30 - CRYSTAL GROWTH

Yoshinao KUMAGAI

Person

Patents Grantslast 30 patents

Method for growing beta-Ga2O3-based single crystal film, and crysta...

Crystal laminate structure

Semiconductor substrate, and epitaxial wafer and method for produci...

Semiconductor element and crystalline laminate structure

Group III nitride laminate and vertical semiconductor device having...

Semiconductor substrate, epitaxial wafer, and method for manufactur...

Crystal laminate structure

High voltage withstand Ga2O3-based single crystal schottky barrier...

Nitride semiconductor crystal, manufacturing method and manufacturi...

Indium gallium nitride light emitting devices

Highly transparent aluminum nitride single crystalline layers and d...

Method for manufacturing aluminum-based group III nitride single cr...

Single-cystalline aluminum nitride substrate and a manufacturing me...

ZnO film production system and production method using ZnO film pro...

Method for producing gallium trichloride gas and method for produci...

Method of producing a group III nitride crystal

Epitaxial growth method of a zinc oxide based semiconductor layer,...

n-Type conductive aluminum nitride semiconductor crystal and manufa...

Gallium nitride substrate and gallium nitride layer formation method

Gallium nitride baseplate and epitaxial substrate

Vapor phase growth method for A1-containing III-V group compound se...

Method and apparatus for AlGan vapor phase growth

Gallium nitride baseplate, epitaxial substrate, and method of formi...

Patents Applicationslast 30 patents

CRYSTAL LAMINATION STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF M...

METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...

SEMICONDUCTOR SUBSTRATE, AND EPITAXIAL WAFER AND METHOD FOR PRODUCI...

CRYSTAL LAMINATE STRUCTURE

GROUP III NITRIDE LAMINATE AND VERTICAL SEMICONDUCTOR DEVICE HAVING...

INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES

HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE

CRYSTAL LAMINATE STRUCTURE

SEMICONDUCTOR ELEMENT AND CRYSTALLINE LAMINATE STRUCTURE

SEMICONDUCTOR SUBSTRATE, EPITAXIAL WAFER, AND METHOD FOR MANUFACTUR...

METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...

NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD AND MANUFACTURI...

METHOD FOR MANUFACTURING ALUMINUM-BASED GROUP III NITRIDE SINGLE CR...

HIGHLY TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALLINE LAYERS AND D...

ZnO FILM PRODUCTION DEVICE, AND PRODUCTION METHOD

Single-Crystalline Aluminum Nitride Substrate and a Manufacturing M...

INDIUM GALLIUM NITRIDE LIGHT EMITTING DEVICES

METHOD FOR PRODUCING GALLIUM TRICHLORIDE GAS AND METHOD FOR PRODUCI...

LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF

METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NIT...

N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFA...

METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL

EPITAXIAL GROWTH METHOD, EPITAXIAL CRYSTAL STRUCTURE, EPITAXIAL CRY...

Gallium Nitride Baseplate and Epitaxial Substrate

GALLIUM NITRIDE SUBSTRATE AND GALLIUM NITRIDE LAYER FORMATION METHOD

Method And Apparatus For Algan Vapor Phase Growth

Gallium Nitride Baseplate, Epitaxial Substrate, and Method of Formi...

Vapor phase growth method for al-containing III-V group compound se...