Yoshio Nishi

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a metal silicide layer connecting two s...
- Patent number 5,061,983
- Issue date Oct 29, 1991
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS Semiconductor device and method of manufacturing the same
- Patent number 4,523,213
- Issue date Jun 11, 1985
- VLSI Technology Research Association
- Masami Konaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contacting but electrically isolated se...
- Patent number 4,491,856
- Issue date Jan 1, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated injection logic semiconductor devices
- Patent number 4,459,606
- Issue date Jul 10, 1984
- Tokyo Shibaura Electric Co., Ltd.
- Yukuya Tokumaru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices
- Patent number 4,327,476
- Issue date May 4, 1982
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hiroshi Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing intergrated injection logic semiconductor d...
- Patent number 4,153,487
- Issue date May 8, 1979
- Tokyo Shibaura Electric Co., Ltd.
- Yukuya Tokumaru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing integrated injection logic semiconductor de...
- Patent number 4,151,019
- Issue date Apr 24, 1979
- Tokyo Shibaura Electric Co., Ltd.
- Yukuya Tokumaru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated injection logic with both grid and internal double-diffu...
- Patent number 4,119,998
- Issue date Oct 10, 1978
- Tokyo Shibaura Electric Co., Ltd.
- Yukuya Tokumaru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors
- Patent number 4,106,045
- Issue date Aug 8, 1978
- The President of the Agency of Industrial Science and Technology
- Yoshio Nishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,106,049
- Issue date Aug 8, 1978
- Tokyo Shibaura Electric Co., Ltd.
- Satoshi Shinozaki
- H01 - BASIC ELECTRIC ELEMENTS

Yoshio Nishi

Person

Patents Grantslast 30 patents

Semiconductor device having a metal silicide layer connecting two s...

MOS Semiconductor device and method of manufacturing the same

Semiconductor device having contacting but electrically isolated se...

Integrated injection logic semiconductor devices

Method of manufacturing semiconductor devices

Method of manufacturing intergrated injection logic semiconductor d...

Method of manufacturing integrated injection logic semiconductor de...

Integrated injection logic with both grid and internal double-diffu...

Field effect transistors

Semiconductor device