Yuan Taur

Person

Armonk, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned double-gate MOSFET by selective epitaxy and silicon wa...
- Patent number 6,759,710
- Issue date Jul 6, 2004
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with vertical gate side walls and method f...
- Patent number 6,593,617
- Issue date Jul 15, 2003
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned double-gate MOSFET by selective epitaxy and silicon wa...
- Patent number 6,365,465
- Issue date Apr 2, 2002
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming steep lateral doping distribution at source/drain junctions
- Patent number 6,268,640
- Issue date Jul 31, 2001
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with improved implants and method for maki...
- Patent number 6,143,635
- Issue date Nov 7, 2000
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making field effect transistors having sub-lithographic...
- Patent number 6,040,214
- Issue date Mar 21, 2000
- International Business Machines Corporation
- Diane C. Boyd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical double-gate field effect transistor
- Patent number 5,780,327
- Issue date Jul 14, 1998
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI CMOS structure
- Patent number 5,767,549
- Issue date Jun 16, 1998
- International Business Machines Corporation
- Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical double-gate field effect transistor
- Patent number 5,689,127
- Issue date Nov 18, 1997
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a self-aligned double-gate MOSFET by selecti...
- Patent number 5,646,058
- Issue date Jul 8, 1997
- International Business Machines Corporation
- Yuan Taur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned double-gate MOSFET by selective lateral epitaxy
- Patent number 5,604,368
- Issue date Feb 18, 1997
- International Business Machines Corporation
- Yuan Taur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell with capacitor
- Patent number 5,541,427
- Issue date Jul 30, 1996
- International Business Machines Corporation
- Barbara A. Chappell
- G11 - INFORMATION STORAGE
Information Patent Grant
SOI lateral bipolar transistor with edge-strapped base contact and...
- Patent number 5,298,786
- Issue date Mar 29, 1994
- International Business Machines Corp.
- Ghavam G. Shahidi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for real-time monitoring the characteristics, variations and...
- Patent number 4,585,342
- Issue date Apr 29, 1986
- International Business Machines Corporation
- Burn J. Lin
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Single mask process for fabricating CMOS structure
- Patent number 4,509,991
- Issue date Apr 9, 1985
- International Business Machines Corporation
- Yuan Taur
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Self-aligned double-gate MOSFET by selective epitaxy and silicon wa...
- Publication number 20020093053
- Publication date Jul 18, 2002
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Self-aligned double-gate MOSFET by selective epitaxy and silicon wa...

Field effect transistors with vertical gate side walls and method f...

Self-aligned double-gate MOSFET by selective epitaxy and silicon wa...

Forming steep lateral doping distribution at source/drain junctions

Field effect transistors with improved implants and method for maki...

Method for making field effect transistors having sub-lithographic...

Vertical double-gate field effect transistor

SOI CMOS structure

Vertical double-gate field effect transistor

Method for fabricating a self-aligned double-gate MOSFET by selecti...

Self-aligned double-gate MOSFET by selective lateral epitaxy

SRAM cell with capacitor

SOI lateral bipolar transistor with edge-strapped base contact and...

System for real-time monitoring the characteristics, variations and...

Single mask process for fabricating CMOS structure

Patents Applicationslast 30 patents

Self-aligned double-gate MOSFET by selective epitaxy and silicon wa...