Yuancheng Yang

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Beijing, CN

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Patents Grantslast 30 patents

Information Patent Grant
Integration method for a vertical nanowire transistor
- Patent number 9,502,310
- Issue date Nov 22, 2016
- Peking University
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating multiple layers of ultra narrow silicon wires
- Patent number 9,425,060
- Issue date Aug 23, 2016
- Peking University
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating quasi-SOI source/drain field effect transist...
- Patent number 9,349,588
- Issue date May 24, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PREPARING A NANO-SCALE FIELD-EFFECT TRANSISTOR
- Publication number 20160268384
- Publication date Sep 15, 2016
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A QUASI-SOI SOURCE-DRAIN MULTI-GATE DEVICE
- Publication number 20160247726
- Publication date Aug 25, 2016
- PERKING UNIVERSITY
- Ru HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20160225851
- Publication date Aug 4, 2016
- Peking University
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Multiple Layers of Ultra Narrow Silicon Wires
- Publication number 20160181114
- Publication date Jun 23, 2016
- Peking University
- Ming Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING QUASI-SOI SOURCE/DRAIN FIELD EFFECT TRANSIST...
- Publication number 20160118245
- Publication date Apr 28, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS