Yun Han

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for extreme ultraviolet (EUV) resist patterning development
- Patent number 12,189,297
- Issue date Jan 7, 2025
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technologies for high aspect ratio carbon etching with inserted cha...
- Patent number 12,040,176
- Issue date Jul 16, 2024
- Tokyo Electron Limited
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic plasma processing
- Patent number 11,961,735
- Issue date Apr 16, 2024
- Tokyo Electron Limited
- Yun Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma processing with radio frequency (RF) source and bias signal...
- Patent number 11,942,307
- Issue date Mar 26, 2024
- Tokyo Electron Limited
- Zhiying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-atomic layer deposition (ALD) method of forming sidewall passiv...
- Patent number 11,651,967
- Issue date May 16, 2023
- Tokyo Electron Limited
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect correction on metal resists
- Patent number 11,605,539
- Issue date Mar 14, 2023
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized etch stop layer
- Patent number 11,532,517
- Issue date Dec 20, 2022
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic plasma etch process
- Patent number 11,527,413
- Issue date Dec 13, 2022
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for anisotropic etch of silicon-based materials with select...
- Patent number 11,342,195
- Issue date May 24, 2022
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-atomic layer deposition (ALD) method of forming sidewall passiv...
- Patent number 11,195,723
- Issue date Dec 7, 2021
- Tokyo Electron Limited
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect correction on metal resists
- Patent number 11,094,543
- Issue date Aug 17, 2021
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for extreme ultraviolet (EUV) resist patterning development
- Patent number 11,079,682
- Issue date Aug 3, 2021
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20250006504
- Publication date Jan 2, 2025
- TOKYO ELECTRON LIMITED
- Jason MARION
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ION-ASSISTED SELF-LIMITED CONFORMAL ETCH
- Publication number 20240379372
- Publication date Nov 14, 2024
- TOKYO ELECTRON LIMITED
- Adam Pranda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Etching Features in a Layer in a Substrate
- Publication number 20240234158
- Publication date Jul 11, 2024
- TOKYO ELECTRON LIMITED
- Indroneil Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Etching Molybdenum
- Publication number 20240186149
- Publication date Jun 6, 2024
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Processing a Substrate
- Publication number 20240087891
- Publication date Mar 14, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variable Hardness Amorphous Carbon Mask
- Publication number 20230343592
- Publication date Oct 26, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Extreme Ultraviolet (EUV) Resist Patterning Development
- Publication number 20230341781
- Publication date Oct 26, 2023
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Improving Etch Rate And Critical Dimension Uniformity Wh...
- Publication number 20230343598
- Publication date Oct 26, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR HIGH ASPECT RATIO CARBON ETCHING WITH INSERTED CHA...
- Publication number 20230326737
- Publication date Oct 12, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etching of Polycrystalline Semiconductors
- Publication number 20230317462
- Publication date Oct 5, 2023
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Processing with Radio Frequency (RF) Source and Bias Signal...
- Publication number 20230117812
- Publication date Apr 20, 2023
- TOKYO ELECTRON LIMITED
- Zhiying Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Processing Apparatus with Tunable Electrical Characteristic
- Publication number 20220392749
- Publication date Dec 8, 2022
- TOKYO ELECTRON LIMITED
- Peter Lowell George Ventzek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CYCLIC PLASMA PROCESSING
- Publication number 20220392765
- Publication date Dec 8, 2022
- TOKYO ELECTRON LIMITED
- Yun Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SACRIFICIAL CAPPING LAYER FOR CONTACT ETCH
- Publication number 20220384199
- Publication date Dec 1, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL GATE CAPPING LAYER FOR GATE PROTECTION
- Publication number 20220359718
- Publication date Nov 10, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FINFET STRUCTURE
- Publication number 20220344162
- Publication date Oct 27, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL CAPPING LAYER FOR GATE PROTECTION
- Publication number 20220344169
- Publication date Oct 27, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20220301930
- Publication date Sep 22, 2022
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Etch Stop Layer with Improved Etch Stop Capability
- Publication number 20220246747
- Publication date Aug 4, 2022
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CYCLIC PLASMA ETCH PROCESS
- Publication number 20220246438
- Publication date Aug 4, 2022
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Atomic Layer Deposition (ALD) Method of Forming Sidewall Passiv...
- Publication number 20220189781
- Publication date Jun 16, 2022
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect Correction on Metal Resists
- Publication number 20220181153
- Publication date Jun 9, 2022
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED ETCH STOP LAYER
- Publication number 20210242089
- Publication date Aug 5, 2021
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Methods for extreme ultraviolet (EUV) resist patterning development

Technologies for high aspect ratio carbon etching with inserted cha...

Cyclic plasma processing

Plasma processing with radio frequency (RF) source and bias signal...

Non-atomic layer deposition (ALD) method of forming sidewall passiv...

Defect correction on metal resists

Localized etch stop layer

Cyclic plasma etch process

Methods for anisotropic etch of silicon-based materials with select...

Non-atomic layer deposition (ALD) method of forming sidewall passiv...

Defect correction on metal resists

Methods for extreme ultraviolet (EUV) resist patterning development

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

METHOD FOR ION-ASSISTED SELF-LIMITED CONFORMAL ETCH

Method for Etching Features in a Layer in a Substrate

Methods for Etching Molybdenum

Method for Processing a Substrate

Variable Hardness Amorphous Carbon Mask

Methods for Extreme Ultraviolet (EUV) Resist Patterning Development

Method For Improving Etch Rate And Critical Dimension Uniformity Wh...

TECHNOLOGIES FOR HIGH ASPECT RATIO CARBON ETCHING WITH INSERTED CHA...

Etching of Polycrystalline Semiconductors

Plasma Processing with Radio Frequency (RF) Source and Bias Signal...

Plasma Processing Apparatus with Tunable Electrical Characteristic

CYCLIC PLASMA PROCESSING

SACRIFICIAL CAPPING LAYER FOR CONTACT ETCH

SACRIFICIAL GATE CAPPING LAYER FOR GATE PROTECTION

METHOD OF FORMING A FINFET STRUCTURE

SACRIFICIAL CAPPING LAYER FOR GATE PROTECTION

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

Contact Etch Stop Layer with Improved Etch Stop Capability

CYCLIC PLASMA ETCH PROCESS

Non-Atomic Layer Deposition (ALD) Method of Forming Sidewall Passiv...

Defect Correction on Metal Resists

LOCALIZED ETCH STOP LAYER