Yung-Chung Kao

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor growth method
- Patent number 6,521,042
- Issue date Feb 18, 2003
- Texas Instruments Incorporated
- Francis G. Celii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming lateral resonant tunneling devices
- Patent number 6,139,483
- Issue date Oct 31, 2000
- Texas Instruments Incorporated
- Alan C. Seabaugh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor growth method
- Patent number 5,985,025
- Issue date Nov 16, 1999
- Texas Instruments Incorporated
- Francis G. Celii
- C30 - CRYSTAL GROWTH
Information Patent Grant
Capped anneal
- Patent number 5,744,375
- Issue date Apr 28, 1998
- Texas Instruments Incorporated
- Yung-Chung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capped anneal
- Patent number 5,659,188
- Issue date Aug 19, 1997
- Texas Instruments Incorporated
- Yung-Chung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductors and a method for thin film growth
- Patent number 5,625,204
- Issue date Apr 29, 1997
- Texas Instruements Incorporated
- Yung-Chung Kao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth method by repeatedly measuring flux in MBE chamber
- Patent number 5,556,462
- Issue date Sep 17, 1996
- Texas Instruments Incorporated
- Francis G. Celii
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductors and a method for thin film growth
- Patent number 5,490,880
- Issue date Feb 13, 1996
- Texas Instruments, Incorporated
- Yung-Chung Kao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Rotation induced superlattice
- Patent number 5,415,128
- Issue date May 16, 1995
- Texas Instruments Incorporated
- Yung-Chung Kao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlling thin film growth of compound semiconductors...
- Patent number 5,400,739
- Issue date Mar 28, 1995
- Texas Instruments Incorporated
- Yung-Chung Kao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of semiconductor layer growth by MBE
- Patent number 5,399,521
- Issue date Mar 21, 1995
- Texas Instruments Incorporated
- Francis G. Celii
- C30 - CRYSTAL GROWTH
Information Patent Grant
Capped anneal
- Patent number 5,391,515
- Issue date Feb 21, 1995
- Texas Instruments Incorporated
- Yung-Chung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterned heteroepitaxial growth
- Patent number 5,084,409
- Issue date Jan 28, 1992
- Texas Instruments Incorporated
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS

Yung-Chung Kao

Person

Patents Grantslast 30 patents

Semiconductor growth method

Method of forming lateral resonant tunneling devices

Semiconductor growth method

Capped anneal

Capped anneal

Compound semiconductors and a method for thin film growth

Growth method by repeatedly measuring flux in MBE chamber

Compound semiconductors and a method for thin film growth

Rotation induced superlattice

Method for controlling thin film growth of compound semiconductors...

Method of semiconductor layer growth by MBE

Capped anneal

Method for patterned heteroepitaxial growth