Capped anneal

Abstract

Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs on silicon is accomplished by first growing GaAs (104) on silicon (102), then growing a lattice matched cap of Al.sub.z Ga.sub.1-z,As (106), next annealing out defects with the Al.sub.z Ga.sub.1-z As cap (106) limiting desorption of gallium, lastly growing further GaAs (110) directly on the cap. The lattice matched cap is also used as an implant anneal cap.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

Copending U.S. applications Ser. Nos. 912,028, filed Sep. 26, 1986 (J. W.Lee), 94,231, filed Sep. 8, 1987 (Matyi and Shichijo), 224,428, filed Jul. 25, 1988 (Shichijo and Matyi), and 224,965, filed Jul. 27, 1988 (Shichijo) disclose related subject matter. These cross-referenced applications are assigned to the assignee of the present application.

BACKGROUND OF THE INVENTION

1. Field of the Invention.

The present invention relates to growth of semiconductor materials and devices, and, more particularly, to heteroepitaxial growth such as gallium arsenide on silicon and devices in such heterostructures.

2. Description of the Related Art.

Many researchers have investigated growth of semiconductor-device quality gallium arsenide (GaAs) on silicon wafers and fabrication of active devices in the GaAs. Such devices would combine the higher mobility of carriers in GaAs with the greater mechanical strength and thermal conductivity of a silicon substrate. For example, R. Fischer et al, GaAs/AlGaAs Heterojunction Bipolar Transistors on Si Substrates, 1985 IEDM Tech. Digest 332, report GaAs/AlGaAs heterojunction bipolar transistors grown on silicon substrates and having current gains of .beta.=13 for a 0.2 .mu.m thick base. Similarly, G. Turner et al, Picosecond Photodetector Fabricated in GaAs Layers Grown on Silicon and Silicon On Sapphire Substrates, 1985 IEDM Tech. Digest 468, report response times of 60 picoseconds for photoconductive detectors fabricated in GaAs on silicon. These articles also note that majority carrier devices such as MESFETs fabricated in GaAs on silicon have performance approaching that of homoepitaxial devices; and this has encouraged efforts to integrate GaAs/AlGaAs optoelectronic and high-frequency devices and silicon devices on the same wafer to utilize high-data-rate optical interconnections to reduce the number of wire interconnections. Selective recrystallization of amorphous GaAs can use the high resistivity of noncrystalline GaAs; see, for example, A. Christou et al, Formation of (100) GaAs on (100) Silicon by Laser Recrystallization, 48 Appl. Phys. Lett. 1516 (1986).

One of the key limitations in the implementation of device structures based on heteroepitaxial GaAs on silicon has been the 4.1% difference in lattice parameters between the two materials. This lattice mismatch leads to the formation of a network of misfit dislocations at the heterointerface; under typical epitaxial growth conditions, a significant fraction of these misfit defects thread away from the interface and into the GaAs regions where devices are subsequently fabricated. It is the presence of these threading dislocations (which can serve as recombination and scattering centers) that has seriously limited the implementation of GaAs on silicon technology.

A number of schemes have been reported for either annihiliating or retarding the propagation of threading dislocations in lattice mismatched semiconductors such as GaAs on silicon. Notably among these is post-growth thermal annealing for defect reduction; see J. W. Lee et al, 50 Appl. Phys. Lett. 31 (1987), Choi et al, 50 Appl. Phys. Lett. 992 (1987), and N. Chand et al, 49 Appl. Phys. Lett. 815 (1986). Post-growth annealing by itself has been shown to be effective at reducing the global defect in GaAs layers on silicon substrates; however, there is insufficient data at this time to determine its effectiveness at lowering the density of device degrading threading dislocations. Similarly, Fan et al., U.S. Pat. No. 4,632,712, interrupts the GaAs growth to trap threading dislocations. Alternatively, a number of workers have studied the use of either compositional or thermally cycled superlattices during the growth process for dislocation control; see J. W. Lee, Proc. 1986 Int'l. Symp. on GaAs and Related Compounds 111 (1987), T. Soga et al, 26 Japan. J. Appl. Phys. L536 (1987), R. D. Dupuis et al, 50 Appl. Phys. Lett. 407 (1987). It appears from this literature that the primary effect of an intermediary superlattice is to deflect the threading dislocations by the imposition of a strain field (either by thermal effects in the case of the thermally cycled layer or by lattice dilations in the case of chemical superlattices) in such a way that they tend to propagate parallel instead of obliquely to the heterointerface. See Szilagyi et al, 4 J. Vac. Sci. Tech. A. 2200 (1986).

However, the known methods still have unacceptably high threading dislocation densities for GaAs epitaxially grown on silicon. po Various researchers have investigated the loss of gallium and aluminum during MBE growth and high temperature treatment of GaAs and Al.sub.z Ga.sub.1-z As; see T. Kojima et al, Layer-by-layer Sublimation Observed by Reflection High-energy Electron Diffraction Intensity Oscillation in a Molecular Beam Epitaxy System, 47 Appl. Phys. Lett. 286 (1985), J. Van Hove et al, Mass-action Control of AlGaAs and GaAs growth in Molecular Beam Epitaxy, 47 Appl. Phys. Lett. 726 (1985), M. Kawabe et al, Preferential Desorption of Ga from Al.sub.z Ga.sub.1-z As Grown by Molecular Beam Epitaxy, 23 Jpn. J. Appl. Phys. L351 (1984), H. Tanaka et al, Single-Longitudinal-Mode Selfaligned (AlGa)As Double-Heterostructure Lasers Fabricated by Molecular Beam Epitaxy, 24 Jpn. J. Appl. Phys. L89 (1985), and R. Heckingbottom, Thermodynamic Aspects of Molecular Beam Epitaxy: High Temperature Growth in the GaAs/Ga.sub.1-z Al.sub.z As System, 3 J. Vac. Sci. Tech. B 572 (1985). The research shows that gallium is lost at a much greater rate than aluminum and Al.sub.z Ga.sub.1-z As actually forms a surface layer of AlAs which retards further loss of gallium.

In emitter-up HBT technology the use of MOCVD to deposit an over-growth emitter onto a zinc implanted base was recently demonstrated; see J. W. Tully, "A Fully Planar Heterojunction Bipolar Transistor," 7 IEEE Elec. Dev. Lett., 203 (1986) and J. W. Tully, W. Hant, and B. B. O'Brien, "Heretojunction Bipolar Transistors with Ion-Implanted Bases," 7 IEEE Elec. Dev. Lett., 615 (1986) After such an implantation the implanted dopant must be activated and the implant damage must be removed while the surface perfection is maintained since the surface will be the active base/emitter interface. However, unknown methods have the problem of arsenic loss during the anneal or stress induced by an anneal cap.

SUMMARY OF THE INVENTION

The present invention provides a lattice matched annealing cap for semiconductor layers, both for heteroepitaxial growth and for implant activation, and devices fabricated with the annealed semiconductor. Preferred embodiments include heteroepitaxially grown GaAs on silicon with an Al.sub.z Ga.sub.1-z As capping layer plus further GaAs grown on the capping layer after the anneal; devices are fabricated in this further GaAs layer. Other preferred embodiments include Al.sub.z Ga.sub.1-z As capping of GaAs followed by implantation of dopants through the Al.sub.z Ga.sub.1-z As plus an activation anneal for fabrication of devices such as MESFETs and heretojunction bipolar transistors.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings are schematic for clarity.

FIG. 1 is a cross sectional elevation view of a first preferred embodiment structure;

FIG. 2 is a time-temperature curve for the first preferred embodiment method;

FIGS. 3a-d are cross sectional elevation views of the steps of the first preferred embodiment method;

FIG. 4 is a transmission electron microscopy view of the first preferred embodiment structure;

FIGS. 5a-b are cross section elevation views of the steps of a second preferred embodiment method; and

FIGS. 6a-b illustrate a third preferred embodiment method.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The first preferred embodiment heteroepitaxial structure, shown in schematic cross sectional elevation view in FIG. 1 and generally denoted 100, includes silicon substrate 102, 1.5 .mu.m thick GaAs buffer layer 104, 0.1 .mu.m thick Al.sub.z Ga.sub.1-z As layer 106, AlAs layer 108 which is only a few atomic layers thick, and GaAs layer 110 of thickness 2.5 microns. Active devices such as MESFET 112 and JFETs may be fabricatedin GaAs layer 110, or layer 110 could be grown to include both GaAs and Al.sub.z Ga.sub.1-z As layers and heretojunction bipolar transistors fabricated in layer 110.

The first preferred embodiment method of fabrication of the first preferredembodiment structure includes the time-temperature growth illustrated in FIG. 2 and the steps illustrated in cross sectional elevation view in FIGS. 3a-d as follows:

(a) Insert silicon substrate 102 (about 3 inches in diameter and 25 mils thick and oriented in the <100 direction) into a molecular beam epitaxy (MBE) machine and dean by baking at 950 C. for ten to fifteen minutes in ultrahigh vacuum: this removes surface contaminants such as native oxide from substrate 102. See the lefthand portion of FIG. 2 showing the 950 C. temperature run.

(b) Lower the temperature of substate 102 to 450 C. and slowly (0.3 .mu.m per hour) grow a GaAs layer about 0.2 .mu.m thick; this low temperature grow provides an initial buffer layer that helps confine misfit dislocations due to the 4.1% lattice mismatch between silicon and GaAs. Stop the low temperature GaAs growth. Raise the temperature of substrate 102 to 550 C. and grow 1.3 .mu.m of GaAs at a rate of about 0.9 .mu.m per hour to complete buffer layer 104. See the left center of FIG. 2 showing the two GaAs growth runs and FIG. 3a for a cross sections elevation view. An alternative method would be to continue the GaAs growth as the substrate temperature is raised from 450 to 550.

(c) While maintaining the substrate temperature at 550 C. change from the growth of GaAs to the growth of Al.sub.z Ga.sub.1-z As, and grow 0.1 .mu.mthick layer 106 of Al.sub.z Ga.sub.1-z As with .chi.=0.35. See the center of FIG. 2 and FIG. 3b.

(d) Stop the growth of Al.sub.z Ga.sub.1-z As and raise the temperature of substrate 102 to 850 C. for five to fifteen minutes to anneal out the twins, stacking faults, and most of the threading dislocations in buffer layer 104 (and Al.sub.z Ga.sub.1-z As layer 106). During this anneal an arsenic atmosphere (about 10.sup.-5 torr) is maintained to keep the surface arsenic stabilized. The gallium preferentially desorbs from the surface leaving the aluminum behind; thus a few monolayers of ALAs (layer 108) fore on the surface and this AlAs retards farther out diffusion and desorption of gallium. The thermodynamic equilibrium at the surface is probably ##EQU1##See the center of FIG. 2 and FIG. 3c. Note that without capping layer 106 and under the same arsenic atmosphere (about 10.sup.-5 torr) the highest temperature that could be used for in situ annealing would be about 700 C.because the congruent temperature for GaAs sublimation is about 640 C. and more than about 50 C. above the congruent temperature is a practical limit. (The congruent temperature for GaAs sublimation is the temperature at which the vapor pressures of the Ga and As.sub.2 are equal.) In contrast, the congruent temperature for AlAs sublimation is about 800 C., and the Al.sub.z Ga.sub.1-z As/Gas interface is stable up to 900 C.

(e) Reduce the temperature of substrate 102 to 550 C. and resume growing GaAs to form layer 110 to a thickness of 2.5 pro. Note that AlAs layer 108and Al.sub.z Ga.sub.1-z As layer 106 are essentially lattice matched to GaAs buffer layer 104 (the lattice mismatch of GaAs and Al.sub.z Ga.sub.1-z As is only 0.15.chi.%, and layers 106 plus 108 are so thin thanthis mismatch would be compensated for by a strain). Thus GaAs layer 110 isgrown at a low temperature on a lattice matched material which has a low dislocation density and, consequently, layer 110 has no twins and stackingfaults plus a low dislocation density. See the righthand portion of FIG. 2 and FIG. 3d; FIG. 4 is a transmission electron microscopy (TEM) view of the same structure as in FIG. 3d but with different layer thicknesses. GaAs layer 110 does not need an ex situ anneal; experiments have shown that such an anneal does not provide any further improvement.

(f) Remove layered substrate 102 from the MBE machine and form MESFET 112 (or any other devices) in GaAs layer 110 by standard processing; for example, ion implant a channel region plus source and drain regions, and deposit a Ti/Pt/Au gate and Ge/Ni/Au ohmic source and drain contacts by liftoff. This yields the structure of FIG. 1. Passivation, interconnections, and packaging complete the structure as part of an integrated circuit, but these have been omitted from the drawings for clarity.

Note that GaAs and silicon have quite different coefficients of thermal expansions so a low growth temperature will yield less thermal stress in the resultant structure. Thus the lower temperature MBE growth will be preferable to the higher MOCVD growth of GaAs on silicon. Further, MBE growth is cleaner than MOCVD growth due to the large amounts of carbon present from the metalorganic compounds used in MOCVD.

The second preferred embodiment method uses a Al.sub.z Ga.sub.1-z As capping layer for the activation anneal of implanted GaAs includes the following steps as illustrated in cross sectional elevation view in FIGS. 5a-b.

(a) GaAs 202 (which may correspond to GaAs layer 110 of the structure shownin FIG. 3d) has Al.sub.z Ga.sub.1-z As capping layer 204 grown to a thickness of 0.05 .mu.m (500 .ANG.) and photoresist 206 spun on and exposed and developed. Then dopants, such as silicon, are ion implanted through Al.sub.z Ga.sub.1-z As layer 204 into GaAs 202 with patterned photoresist 206 as the implant mask to form impurity region 210 which alsohas a damaged crystal lattice. The implant typically would have a dose of 1.times.10.sup.13 /cm.sup.2 at an energy of 100 keV for silicon ions to form n.sup.+ region 210; see FIG. 5a. Region 210 could be the base for an eventual heterojunction p-n-p bipolar transistor.

(b) Photoresist 206 is then stripped and the implant annealed with Al.sub.zGa.sub.1-z As 204 as a cap in an arsenic atmosphere. As in the first preferred embodiment, gallium desorbs from the cap and leaves a few monolayers of AlAs 208 which prevent outdiffusion of further gallium. See FIG. 5b.

(c) After the anneal the AlAs 208 and the remaining Al.sub.z Ga.sub.1-z As 204 are removed from GaAs 202 with HF which selectively etches Al.sub.z Ga.sub.1-z As with respect to GaAs. Note that prior art methods use a cap of silicon nitride, but silicon nitride is amorphous (and not lattice-matched to GaAs 202) and stresses the GaAs at the interface which may lead to cracking of the GaAs layer. The use of lattice matched cap 204avoids this stress.

Third preferred embodiment method uses an epitaxial Al.sub.0.5 Ga.sub.0.5 As cap as both anneal cap and an implant spacer. FIGS. 6a-b illustrate thebase formation process of an emitter-down overgrowth heterojunction bipolartransistor showing both the starting first epi in FIG. 6a and the base implant profile in FIG. 6b. In the overgrowth process, a spacer layer suchas epitaxial Al.sub.0.5 Ga.sub.0.5 As 308 or silicon nitride can be deposited over the base area to act as a spacer for adjusting the base implant depth. To maximize the electric field in the base such that the electron transit time is a minimum, the peak in the base doping concentration should occur at the emitter-base junction. The spacer thickness can be adjusted such that the peak of the implant occurs at the emitter/base interface for a given implant energy and fluence. The high (50%) aluminum concentration in the Al.sub.z Ga.sub.1-z As spacer layer 308 permits easy removal from the underlying GaAs base surface after the activation anneal of the base implant. A further advantage of using Al.sub.z Ga.sub.1-z As 308 as the spacer layer instead of silicon nitride or other such material is that upon annealing Al.sub.z Ga.sub.1-z As acts as an arsenic rich cap to keep the base surface region from decomposing. Rapid thermal annealing precludes the use of arsenic over-pressure due to process complexity in a single wafer process; however, the arsenic rich cap, Al.sub.z Ga.sub.1-z As 308, helps maintain the GaAs surface perfection. After the removal of the spacer layer, the GaAs collector layer can be grown onto the base layer. Fourth preferred embodiment methodis similar to the third preferred embodiment except that the base is implanted through an Al.sub.z Ga.sub.1-z As spacer layer into the collector layer to fabricate an emitter-up HBT. Again, after the anneal, which is typically rapid thermal annealing, the Al.sub.z Ga.sub.1-z As capis removed and the emitter is grown.

Fifth preferred embodiment method is analogous to the third and fourth preferred embodiments. After the complete growth of all the layers of a planar HBT, a spacer layer of Al.sub.z Ga.sub.1-z As with .chi..about.0.5 on top of the structure is used for improved implant activation and betterohmic contacts. In HBT fabrication the base is contacted by a P+ implant, through the spacer, and the collector is reached by a N+ implant, through the spacer. These implants require an activation anneal, typically rapid thermal annealing, where the use of arsenic over-pressure is not practical. The Al.sub.z Ga.sub.1-z As spacer layer will keep the surface arsenic rich and after its removal in HF, ohmic contact formation on the good, arsenic rich GaAs will be better.

MODIFICATIONS AND ADVANTAGES

Various modifications of the preferred embodiments may be made while retaining the feature of a related-material anneal cap and devices made with such anneals. For example, an Al.sub.z Ga.sub.1-z As superlattice maybe used as the anneal cap of AlGaAs in MBE; in this situation, the Al.sub.zGa.sub.1-z As may be grown at a higher temperature (e.g., 600 C.) and the GaAs at a lower temperature (e.g., 550 C.) to obtain the benefits of both a compositional plus thermal-cycled superlattice (which blocks dislocationpropagation) and an Al.sub.z Ga.sub.1-z As anneal cap. Further, in the first preferred embodiment the buffer layer and the top layer could be different materials such as Al.sub.z Ga.sub.1-z As with different .chi. and each of the layers could incude sublayers with different .chi.; indeed, material systems other than AlGaAs, such as GaAsP, InGaAs, InAlGaAsP, etc. or even II-VI system, could be used with the lower vapor pressure component used as the capping layer. Additionally, various growthtemperatures and temperature cycling could be used in the various material systems. Lattice matching of the cap to the annealed layer need only be close enough to avoid defects; thus a thin strained layer cap could also be used.

In the second preferred embodiment the annealing process could be a furnaceanneal, a rapid thermal anneal, or other type of anneal or combination of anneals and could be used with other material systems. Indeed, the starting substrate for the preferred embodiments and variations could be complex such as silicon-on-insulator or include cesses and amorphous material patterns such as silicon dioxide patterns on silicon. And in the third, fourth, and fifth preferred embodiments, devices other than HBTs could be fabricated (such as MESFETs and JFETs) by implantation and cappedanneal, and integrated circuits of the various devices could be fabricated.With the related-material capped anneal the corresponding interfaces such as emitter/base and ohmic/semiconductor will have improved surface state densities and lower specific resistivities.

Claims

1. A method of annealing a semiconductor layer, comprising the steps of:

(a) forming an epitaxial cap layer over said semiconductor layer, said semiconductor layer comprising a compound semiconductor material having constituent elements in a proportion according to Al.sub.x Ga.sub.1-x As, and said cap layer comprising a compound semiconductor material having said constituent elements in a proportion according to Al.sub.y Ga.sub.1-y As, wherein y>x and x>o

(b) heating said cap layer and said semiconductor layer; and

(c) removing said cap layer after said heating step.

2. The method of claim 1, wherein y is 0.5 and x is 0.3.

3. The method of claim 1 further comprising the steps of forming said semiconductor layer at a first temperature and forming said cap layer at a second temperature.

4. The method of claim 3 wherein said first temperature is lower than said second temperature.

5. A method for fabricating a semiconductor device, comprising the steps of:

(a) forming a device layer comprising a compound semiconductor material having constituent elements in a proportion according to Al.sub.x Ga.sub.1-x As;

(b) forming an epitaxial cap layer over said device layer, said cap layer comprising a compound semiconductor material having constituent elements in a proportion according to Al.sub.y Ga.sub.1-y As, wherein y>x and x>o;

(c) implanting dopants through said cap layer into said device layer to form a doped region;

(d) heating said cap layer and said device layer;

(e) removing said cap layer; and

(f) forming a metal contact on said doped region.

6. The method of claim 5, wherein y is 0.5 and x is 0.3.

7. The method of claim 5, wherein said step of forming a device layer is performed at a first temperature and said step of forming a cap layer is performed at a second temperature.

8. The method of claim 7 wherein said first temperature is lower than said second temperature.