Zachary Matthew Stum

Person

Niskayuna, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Tapered gate electrode for semiconductor devices
- Patent number 10,903,330
- Issue date Jan 26, 2021
- General Electric Company
- Richard Joseph Saia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and method for ohmic contacts in silicon carbide devices
- Patent number 9,601,332
- Issue date Mar 21, 2017
- General Electric Company
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with junction termination extension
- Patent number 9,406,762
- Issue date Aug 2, 2016
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for ohmic contacts in silicon carbide devices
- Patent number 9,230,807
- Issue date Jan 5, 2016
- General Electric Company
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for terminating junctions in wide bandgap semic...
- Patent number 9,006,027
- Issue date Apr 14, 2015
- General Electric Company
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,815,721
- Issue date Aug 26, 2014
- General Electric Company
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method of fabricating same
- Patent number 8,536,674
- Issue date Sep 17, 2013
- General Electric Company
- Cheng-Po Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide MOSFET cell structure and method for forming same
- Patent number 8,507,986
- Issue date Aug 13, 2013
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide MOSFET cell structure and method for forming same
- Patent number 8,377,756
- Issue date Feb 19, 2013
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC MOSFETs and self-aligned fabrication methods thereof
- Patent number 8,377,812
- Issue date Feb 19, 2013
- General Electric Company
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET devices and methods of making
- Patent number 7,829,402
- Issue date Nov 9, 2010
- General Electric Company
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for doping impurities
- Patent number 7,807,556
- Issue date Oct 5, 2010
- General Electric Company
- Greg Thomas Dunne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide devices and method of making
- Patent number 7,781,312
- Issue date Aug 24, 2010
- General Electric Company
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating silicon carbide vertical MOSFET devices
- Patent number 7,691,711
- Issue date Apr 6, 2010
- General Electric Company
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating silicon carbide vertical MOSFET devices
- Patent number 7,595,241
- Issue date Sep 29, 2009
- General Electric Company
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION
- Publication number 20160307997
- Publication date Oct 20, 2016
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHOD FOR OHMIC CONTACTS IN SILICON CARBIDE DEVICES
- Publication number 20160118258
- Publication date Apr 28, 2016
- GENERAL ELECTRIC COMPANY
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICES, AND METHODS FOR MANUFACTURIN...
- Publication number 20150236151
- Publication date Aug 20, 2015
- GENERAL ELECTRIC COMPANY
- James Jay McMahon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAPERED GATE ELECTRODE FOR SEMICONDUCTOR DEVICES
- Publication number 20150144960
- Publication date May 28, 2015
- GENERAL ELECTRIC COMPANY
- Richard Joseph Saia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION
- Publication number 20150115284
- Publication date Apr 30, 2015
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140361315
- Publication date Dec 11, 2014
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR OHMIC CONTACTS IN SILICON CARBIDE DEVICES
- Publication number 20140167068
- Publication date Jun 19, 2014
- GENERAL ELECTRIC COMPANY
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR TERMINATING JUNCTIONS IN WIDE BANDGAP SEMIC...
- Publication number 20140070229
- Publication date Mar 13, 2014
- GENERAL ELECTRIC COMPANY
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND METHOD OF FABRICATING SAME
- Publication number 20130334612
- Publication date Dec 19, 2013
- GENERAL ELECTRIC COMPANY
- Cheng-Po Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF
- Publication number 20130146898
- Publication date Jun 13, 2013
- GENERAL ELECTRIC COMPANY
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE MOSFET CELL STRUCTURE AND METHOD FOR FORMING SAME
- Publication number 20130126971
- Publication date May 23, 2013
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE MOSFET CELL STRUCTURE AND METHOD FOR FORMING SAME
- Publication number 20130026559
- Publication date Jan 31, 2013
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND METHOD OF FABRICATING SAME
- Publication number 20120153427
- Publication date Jun 21, 2012
- Cheng-Po Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120153362
- Publication date Jun 21, 2012
- GENERAL ELECTRIC COMPANY
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICES AND METHODS OF MAKING
- Publication number 20100200931
- Publication date Aug 12, 2010
- GENERAL ELECTRIC COMPANY
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SUBSTRATES, SEMICONDUCTOR DEVICES BASED UPON THE SAME AND METHO...
- Publication number 20100123140
- Publication date May 20, 2010
- GENERAL ELECTRIC COMPANY
- Victor Lienkong Lou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES
- Publication number 20090267141
- Publication date Oct 29, 2009
- GENERAL ELECTRIC COMPANY
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF
- Publication number 20090242901
- Publication date Oct 1, 2009
- GENERAL ELECTRIC COMPANY
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Fabricating Silicon Carbide Vertical MOSFET Devices
- Publication number 20090194772
- Publication date Aug 6, 2009
- GENERAL ELECTRIC COMPANY
- Zachary Matthew Stum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICES AND METHODS OF MAKING
- Publication number 20090159896
- Publication date Jun 25, 2009
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICES AND METHOD OF MAKING
- Publication number 20080146004
- Publication date Jun 19, 2008
- GENERAL ELECTRIC COMPANY
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DOPING IMPURITIES
- Publication number 20080132047
- Publication date Jun 5, 2008
- GENERAL ELECTRIC COMPANY
- Greg Thomas Dunne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES
- Publication number 20080050876
- Publication date Feb 28, 2008
- GENERAL ELECTRIC COMPANY
- Kevin Sean Matocha
- H01 - BASIC ELECTRIC ELEMENTS

Zachary Matthew Stum

Person

Patents Grantslast 30 patents

Tapered gate electrode for semiconductor devices

Systems and method for ohmic contacts in silicon carbide devices

Semiconductor device with junction termination extension

Systems and methods for ohmic contacts in silicon carbide devices

Systems and methods for terminating junctions in wide bandgap semic...

Semiconductor device and method of manufacturing the same

Integrated circuit and method of fabricating same

Silicon-carbide MOSFET cell structure and method for forming same

Silicon-carbide MOSFET cell structure and method for forming same

SiC MOSFETs and self-aligned fabrication methods thereof

MOSFET devices and methods of making

Method for doping impurities

Silicon carbide devices and method of making

Method for fabricating silicon carbide vertical MOSFET devices

Method for fabricating silicon carbide vertical MOSFET devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION

SYSTEMS AND METHOD FOR OHMIC CONTACTS IN SILICON CARBIDE DEVICES

SILICON CARBIDE SEMICONDUCTOR DEVICES, AND METHODS FOR MANUFACTURIN...

TAPERED GATE ELECTRODE FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH JUNCTION TERMINATION EXTENSION

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SYSTEMS AND METHODS FOR OHMIC CONTACTS IN SILICON CARBIDE DEVICES

SYSTEMS AND METHODS FOR TERMINATING JUNCTIONS IN WIDE BANDGAP SEMIC...

INTEGRATED CIRCUIT AND METHOD OF FABRICATING SAME

SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF

SILICON-CARBIDE MOSFET CELL STRUCTURE AND METHOD FOR FORMING SAME

SILICON-CARBIDE MOSFET CELL STRUCTURE AND METHOD FOR FORMING SAME

INTEGRATED CIRCUIT AND METHOD OF FABRICATING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

MOSFET DEVICES AND METHODS OF MAKING

SiC SUBSTRATES, SEMICONDUCTOR DEVICES BASED UPON THE SAME AND METHO...

METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES

SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF

Method For Fabricating Silicon Carbide Vertical MOSFET Devices

SILICON CARBIDE MOSFET DEVICES AND METHODS OF MAKING

SILICON CARBIDE DEVICES AND METHOD OF MAKING

METHOD FOR DOPING IMPURITIES

METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES