adapted for electric field or current focusing

Industry

CPC
H01L45/1273

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/1273adapted for electric field or current focusing

Industries

Patents Grantslast 30 patents

Information Patent Grant
Memory cell and method of forming the same
- Patent number 11,659,779
- Issue date May 23, 2023
- Agency for Science, Technology and Research
- Wen Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and methods for forming memory cells
- Patent number 11,641,789
- Issue date May 2, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered memory cell profiles
- Patent number 11,545,625
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for controlling current path by using electric field, and el...
- Patent number 11,527,715
- Issue date Dec 13, 2022
- VMEMORY CORP.
- Jong Hwa Son
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive switching memory cell
- Patent number 11,502,252
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
VIA structure and methods of forming the same
- Patent number 11,489,115
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated phase change memory cell projection liner and etch stop...
- Patent number 11,456,417
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching memory cell
- Patent number 11,456,416
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory including a selector switch on a variable resistance memory...
- Patent number 11,404,479
- Issue date Aug 2, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory devices implementing two-dimensional tra...
- Patent number 11,393,980
- Issue date Jul 19, 2022
- Samsung Electronics Co., Ltd.
- Hideki Horii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with second conductive layer
- Patent number 11,380,842
- Issue date Jul 5, 2022
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 11,367,750
- Issue date Jun 21, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Sunil Kumar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory devices
- Patent number 11,335,852
- Issue date May 17, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and related methods
- Patent number 11,316,107
- Issue date Apr 26, 2022
- Micron Technology, Inc.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device containing selector with current focusing layer and m...
- Patent number 11,271,040
- Issue date Mar 8, 2022
- Western Digital Technologies, Inc.
- Derek Stewart
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance variable memory device with nanoparticle electrode and m...
- Patent number 11,158,796
- Issue date Oct 26, 2021
- OVONYX MEMORY TECHNOLOGY, LLC
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal memory array structure with scavenger layer
- Patent number 11,139,431
- Issue date Oct 5, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 11,133,463
- Issue date Sep 28, 2021
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory cells having an embedded selection element and n...
- Patent number 11,127,897
- Issue date Sep 21, 2021
- SK Hynix Inc.
- Sang Min Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
High-density field-enhanced ReRAM integrated with vertical transistors
- Patent number 11,088,205
- Issue date Aug 10, 2021
- International Business Machines Corporation
- Takashi Ando
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ion-based nanoelectric memory
- Patent number 11,056,647
- Issue date Jul 6, 2021
- The Aerospace Corporation
- Adam W. Bushmaker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confining filament at pillar center for memory devices
- Patent number 11,043,634
- Issue date Jun 22, 2021
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching resistor and method of making such a device
- Patent number 11,004,506
- Issue date May 11, 2021
- UCL BUSINESS LTD
- Anthony Kenyon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VIA structure and methods of forming the same
- Patent number 10,998,498
- Issue date May 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling filament formation and location in a resistive random-a...
- Patent number 10,903,421
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory including a selector switch on a variable resistance memory...
- Patent number 10,896,930
- Issue date Jan 19, 2021
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered memory cell profiles
- Patent number 10,868,248
- Issue date Dec 15, 2020
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory and method for fabricating the same and applicatio...
- Patent number 10,763,306
- Issue date Sep 1, 2020
- Macronix International Co., Ltd.
- Po-Hao Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Architectures and layouts for an array of resistive random access m...
- Patent number 10,755,779
- Issue date Aug 25, 2020
- Silicon Storage Technology, Inc.
- Hieu Van Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device for 3D stack and memory array...
- Patent number 10,741,760
- Issue date Aug 11, 2020
- Seoul National University R&DB Foundation
- Byung-Gook Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20230397514
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY CELL
- Publication number 20230301213
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20230263081
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kerem Akarvardar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230240161
- Publication date Jul 27, 2023
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230225228
- Publication date Jul 13, 2023
- WINBOND ELECTRONICS CORP.
- Chi-Ching LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES HAVING AN ELECTRODE WITH AN EXTENSION
- Publication number 20230217843
- Publication date Jul 6, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- JIANXUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20230140134
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jheng-Hong Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILAMENT CONFINEMENT IN RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20230089257
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Via Structure And Methods Of Forming The Same
- Publication number 20230059026
- Publication date Feb 23, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS AND METHODS FOR FORMING MEMORY CELLS
- Publication number 20220416160
- Publication date Dec 29, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yi JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20220406999
- Publication date Dec 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jheng-Hong Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Devices and Methods of Manufacture
- Publication number 20220336742
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20220271090
- Publication date Aug 25, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Sunil Kumar SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PHASE CHANGE MEMORY CELL PROJECTION LINER AND ETCH STOP...
- Publication number 20220165949
- Publication date May 26, 2022
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY CELL
- Publication number 20220158091
- Publication date May 19, 2022
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE SWITCHING MEMORY CELL
- Publication number 20220158092
- Publication date May 19, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICES AND METHOD OF FORMING THE SAME
- Publication number 20220158093
- Publication date May 19, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- JIA RUI THONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILL-IN CONFINED CELL PCM DEVICES
- Publication number 20220140237
- Publication date May 5, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICES
- Publication number 20220093860
- Publication date Mar 24, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES
- Publication number 20220059763
- Publication date Feb 24, 2022
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Application
CONFINING FILAMENT AT PILLAR CENTER FOR MEMORY DEVICES
- Publication number 20210265566
- Publication date Aug 26, 2021
- International Business Machines Corporation
- DEXIN KONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA Structure and Methods of Forming the Same
- Publication number 20210257548
- Publication date Aug 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...
- Publication number 20210257023
- Publication date Aug 19, 2021
- Silicon Storage Technology, Inc.
- HIEU VAN TRAN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY...
- Publication number 20210210552
- Publication date Jul 8, 2021
- Micron Technology, Inc.
- Andrea Redaelli
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICES
- Publication number 20210167285
- Publication date Jun 3, 2021
- Samsung Electronics Co., Ltd.
- Hideki HORII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAPERED MEMORY CELL PROFILES
- Publication number 20210151673
- Publication date May 20, 2021
- Micron Technology, Inc.
- Agostino Pirovano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY CELLS HAVING AN EMBEDDED SELECTION ELEMENT AND N...
- Publication number 20210066585
- Publication date Mar 4, 2021
- SK HYNIX INC.
- Sang Min LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL AND METHOD OF FORMING THE SAME
- Publication number 20210013407
- Publication date Jan 14, 2021
- Agency for Science, Technology and Research
- Wen Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20200395541
- Publication date Dec 17, 2020
- GLOBALFOUNDRIES INC.
- Sunil Kumar SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEP HEIGHT MITIGATION IN RESISTIVE RANDOM ACCESS MEMORY STRUCTURES
- Publication number 20200373487
- Publication date Nov 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS

adapted for electric field or current focusing

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory cell and method of forming the same

Memory cells and methods for forming memory cells

Tapered memory cell profiles

Method for controlling current path by using electric field, and el...

Resistive switching memory cell

VIA structure and methods of forming the same

Integrated phase change memory cell projection liner and etch stop...

Resistive switching memory cell

Memory including a selector switch on a variable resistance memory...

Variable resistance memory devices implementing two-dimensional tra...

Phase change memory cell with second conductive layer

Vertical memory devices

Resistive random access memory devices

Semiconductor devices and related methods

Memory device containing selector with current focusing layer and m...

Resistance variable memory device with nanoparticle electrode and m...

Horizontal memory array structure with scavenger layer

Memory cells with asymmetrical electrode interfaces

Nonvolatile memory cells having an embedded selection element and n...

High-density field-enhanced ReRAM integrated with vertical transistors

Ion-based nanoelectric memory

Confining filament at pillar center for memory devices

Switching resistor and method of making such a device

VIA structure and methods of forming the same

Controlling filament formation and location in a resistive random-a...

Memory including a selector switch on a variable resistance memory...

Tapered memory cell profiles

Resistive memory and method for fabricating the same and applicatio...

Architectures and layouts for an array of resistive random access m...

Resistive random access memory device for 3D stack and memory array...

Patents Applicationslast 30 patents

TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL

RESISTIVE SWITCHING MEMORY CELL

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR MEMORY DEVICES HAVING AN ELECTRODE WITH AN EXTENSION

RESISTIVE RANDOM ACCESS MEMORY DEVICE

FILAMENT CONFINEMENT IN RESISTIVE RANDOM ACCESS MEMORY

Via Structure And Methods Of Forming The Same

MEMORY CELLS AND METHODS FOR FORMING MEMORY CELLS

RESISTIVE RANDOM ACCESS MEMORY DEVICE

Semiconductor Memory Devices and Methods of Manufacture

VERTICAL MEMORY DEVICES

INTEGRATED PHASE CHANGE MEMORY CELL PROJECTION LINER AND ETCH STOP...

RESISTIVE SWITCHING MEMORY CELL

RESISTIVE SWITCHING MEMORY CELL

MEMORY DEVICES AND METHOD OF FORMING THE SAME

FILL-IN CONFINED CELL PCM DEVICES

RESISTIVE RANDOM ACCESS MEMORY DEVICES

MEMORY CELLS WITH ASYMMETRICAL ELECTRODE INTERFACES

CONFINING FILAMENT AT PILLAR CENTER FOR MEMORY DEVICES

VIA Structure and Methods of Forming the Same

Set-While-Verify Circuit And Reset-While Verify Circuit For Resisti...

MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY...

VARIABLE RESISTANCE MEMORY DEVICES

TAPERED MEMORY CELL PROFILES

NONVOLATILE MEMORY CELLS HAVING AN EMBEDDED SELECTION ELEMENT AND N...

MEMORY CELL AND METHOD OF FORMING THE SAME

VERTICAL MEMORY DEVICES

STEP HEIGHT MITIGATION IN RESISTIVE RANDOM ACCESS MEMORY STRUCTURES