adapted for essentially vertical current flow

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H01L45/1233

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1233adapted for essentially vertical current flow

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device including a memory element between wiring layers and...
- Patent number 11,683,942
- Issue date Jun 20, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Jun Sumino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing variable resistance memory device
- Patent number 11,683,940
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Dongkyu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Step height mitigation in resistive random access memory structures
- Patent number 11,678,592
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,672,132
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Tae Hong Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Electronic synaptic device and method for manufacturing same
- Patent number 11,672,190
- Issue date Jun 6, 2023
- Industry-University Cooperation Foundation Hanyang University
- Tae Whan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,672,130
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jonguk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell and method of forming the same
- Patent number 11,659,779
- Issue date May 23, 2023
- Agency for Science, Technology and Research
- Wen Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite electrode material chemistry
- Patent number 11,659,778
- Issue date May 23, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Three-dimensional oscillator structure
- Patent number 11,651,203
- Issue date May 16, 2023
- Intel Corporation
- Dmitri E. Nikonov
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
RRAM device structure and manufacturing method
- Patent number 11,653,581
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Interconnection structure of an integrated circuit
- Patent number 11,653,577
- Issue date May 16, 2023
- STMicroelectronics (Crolles 2) SAS
- Jean-Philippe Reynard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with double protective liner
- Patent number 11,647,638
- Issue date May 9, 2023
- Intel Corporation
- Anna Maria Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-rectifying resistive memory and fabrication method thereof
- Patent number 11,641,787
- Issue date May 2, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,641,749
- Issue date May 2, 2023
- Samsung Electronics Co., Ltd.
- Dong Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive interface material
- Patent number 11,641,788
- Issue date May 2, 2023
- Micron Technology, Inc.
- Andrea Gotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,641,786
- Issue date May 2, 2023
- Commissariat a l'Energie Atomique et aux Energies
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield RRAM cell with optimized film scheme
- Patent number 11,637,239
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,637,240
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsing-Lien Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile resistive memory device including a plurality of write...
- Patent number 11,636,895
- Issue date Apr 25, 2023
- Samsung Electronics Co., Ltd.
- Cheaouk Lim
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-component cell architectures for a memory device
- Patent number 11,637,145
- Issue date Apr 25, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical nonvolatile memory device including memory cell string
- Patent number 11,631,718
- Issue date Apr 18, 2023
- Samsung Electronics Co., Ltd.
- Jinhong Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Bottom electrode structure in memory device
- Patent number 11,631,810
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Yang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and device including memristor material
- Patent number 11,631,808
- Issue date Apr 18, 2023
- Rockwell Collins, Inc.
- Kyle B. Snyder
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device
- Patent number 11,631,812
- Issue date Apr 18, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory array with memory cells having a 3D selector and a storag...
- Patent number 11,631,717
- Issue date Apr 18, 2023
- Intel Corporation
- Charles Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Efficient fabrication of memory structures
- Patent number 11,626,452
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Don Koun Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS
- Publication number 20240172455
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...
- Publication number 20240164224
- Publication date May 16, 2024
- United Microelectronics Corp.
- Kai-Jiun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS-INDUCED FORMING OF OXIDE RRAM
- Publication number 20240155952
- Publication date May 9, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING
- Publication number 20240147874
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER
- Publication number 20240130255
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Robert Viktor Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...
- Publication number 20240112730
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20240081158
- Publication date Mar 7, 2024
- UNITED MICROELECTRONICS CORP.
- Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM
- Publication number 20240074336
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE MEMORY DEVICE
- Publication number 20240065119
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS
- Publication number 20240057489
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20240057487
- Publication date Feb 15, 2024
- UNITED MICROELECTRONICS CORP.
- Kai-Jiun Chang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICES WITH A CAVITY BETWEEN ELECTRODES
- Publication number 20240049611
- Publication date Feb 8, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- CURTIS CHUN-I HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240040938
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A MEMORY DEVICE AT A BACKSIDE OF A WAFER SUBSTRA...
- Publication number 20240023463
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES
- Publication number 20240023466
- Publication date Jan 18, 2024
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Bit Storage Device Using Phase Change Material
- Publication number 20240016071
- Publication date Jan 11, 2024
- Toshiba Global Commerce Solutions Holdings Corporation
- Timothy Crockett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING BARRIER LAYER BETWEEN ELECTRODE L...
- Publication number 20230422639
- Publication date Dec 28, 2023
- Intel Corporation
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS-COMPATIBLE RRAM DEVICES
- Publication number 20230422641
- Publication date Dec 28, 2023
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOME-SHAPED PHASE CHANGE MEMORY MUSHROOM CELL
- Publication number 20230413694
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORN SHAPED SPACER FOR MEMORY DEVICES
- Publication number 20230380309
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR DYNAMIC BIASING FOR MEMORY CELLS
- Publication number 20230317154
- Publication date Oct 5, 2023
- Intel Corporation
- Yasir Mohsin Husain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE SWITCH
- Publication number 20230320105
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL 1T1R STRUCTURE FOR EMBEDDED MEMORY
- Publication number 20230309325
- Publication date Sep 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPARSE PIERS FOR THREE-DIMENSIONAL MEMORY ARRAYS
- Publication number 20230309426
- Publication date Sep 28, 2023
- Micron Technology, Inc.
- Stephen W. Russell
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICE HAVING RESISTANCE CHANGE PROPERTY
- Publication number 20230309427
- Publication date Sep 28, 2023
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS
- Publication number 20230307025
- Publication date Sep 28, 2023
- Micron Technology, Inc.
- Stephen W. Russell
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNOLOGIES FOR CURRENT BIASING FOR MEMORY CELLS
- Publication number 20230307043
- Publication date Sep 28, 2023
- Intel Corporation
- Jonathan Y. Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING ELEMENT AND MEMORY DEVICE
- Publication number 20230301205
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Taichi IGARASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY CELL
- Publication number 20230301213
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAMMABLE INTERPOSER USING RRAM PLATFORM
- Publication number 20230301214
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Lup San LEONG
- H01 - BASIC ELECTRIC ELEMENTS

adapted for essentially vertical current flow

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Memory device including a memory element between wiring layers and...

Method of manufacturing variable resistance memory device

Step height mitigation in resistive random access memory structures

Variable resistance memory device

Two-terminal reversibly switchable memory device

Electronic synaptic device and method for manufacturing same

Semiconductor device and method of forming the same

Memory cell and method of forming the same

Composite electrode material chemistry

Three-dimensional oscillator structure

RRAM device structure and manufacturing method

Interconnection structure of an integrated circuit

Non-volatile memory structure with positioned doping

Oxide-based resistive memory having a plasma-exposed bottom electrode

Memory device with double protective liner

Self-rectifying resistive memory and fabrication method thereof

Semiconductor device and method for fabricating the same

Resistive interface material

Memory device

High yield RRAM cell with optimized film scheme

Semiconductor structure and method for forming the same

Non-volatile resistive memory device including a plurality of write...

Multi-component cell architectures for a memory device

Vertical nonvolatile memory device including memory cell string

Bottom electrode structure in memory device

System and device including memristor material

Electronic device

3D memory array with memory cells having a 3D selector and a storag...

Efficient fabrication of memory structures

Patents Applicationslast 30 patents

ARRAY ARRANGEMENTS OF VERTICAL BIPOLAR JUNCTION TRANSISTORS

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...

PROCESS-INDUCED FORMING OF OXIDE RRAM

PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING

STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER

DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...

RRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM

VERTICAL PHASE CHANGE MEMORY DEVICE

RANDOM NUMBER GENERATION BASED ON THRESHOLD VOLTAGE RANDOMNESS

RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME

RESISTIVE MEMORY DEVICES WITH A CAVITY BETWEEN ELECTRODES

MEMORY DEVICE AND FABRICATION METHOD THEREOF

METHOD FOR FORMING A MEMORY DEVICE AT A BACKSIDE OF A WAFER SUBSTRA...

FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES

Multi-Bit Storage Device Using Phase Change Material

SEMICONDUCTOR STRUCTURE INCLUDING BARRIER LAYER BETWEEN ELECTRODE L...

CMOS-COMPATIBLE RRAM DEVICES

DOME-SHAPED PHASE CHANGE MEMORY MUSHROOM CELL

HORN SHAPED SPACER FOR MEMORY DEVICES

TECHNOLOGIES FOR DYNAMIC BIASING FOR MEMORY CELLS

SOLID-STATE SWITCH

VERTICAL 1T1R STRUCTURE FOR EMBEDDED MEMORY

SPARSE PIERS FOR THREE-DIMENSIONAL MEMORY ARRAYS

ELECTRONIC DEVICE HAVING RESISTANCE CHANGE PROPERTY

WORD LINE STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS

TECHNOLOGIES FOR CURRENT BIASING FOR MEMORY CELLS

SWITCHING ELEMENT AND MEMORY DEVICE

RESISTIVE SWITCHING MEMORY CELL

PROGRAMMABLE INTERPOSER USING RRAM PLATFORM