AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Industry

CPC
C30B29/40

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Industries

Patents Grantslast 30 patents

Information Patent Grant
Hydrogen recycle system and hydrogen recycle method
- Patent number 12,246,963
- Issue date Mar 11, 2025
- National University Corporation Tokai National Higher Education and Research...
- Shinji Kambara
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Multilayer film structure and method for producing same
- Patent number 12,247,297
- Issue date Mar 11, 2025
- Tosoh Corporation
- Yuya Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for manufacturing hexagonal crystals
- Patent number 12,247,315
- Issue date Mar 11, 2025
- LNBS CO. LTD.
- Hyung Soo Ahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor wafer and method for manufacturing same
- Patent number 12,243,739
- Issue date Mar 4, 2025
- Mitsubishi Electric Corporation
- Yuki Taketomi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for stripping gallium nitride substrate
- Patent number 12,243,746
- Issue date Mar 4, 2025
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen Guo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Aluminum nitride single crystals having large crystal augmentation...
- Patent number 12,227,873
- Issue date Feb 18, 2025
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
High Sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...
- Patent number 12,221,719
- Issue date Feb 11, 2025
- North Carolina A&T State University
- Shanthi Iyer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride substrate with oxygen gradient, method of making,...
- Patent number 12,224,172
- Issue date Feb 11, 2025
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline ceramic substrate and method of manufacture
- Patent number 12,224,173
- Issue date Feb 11, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial alkali halide layers for III-V substrate recycling
- Patent number 12,198,924
- Issue date Jan 14, 2025
- Alliance for Sustainable Energy, LLC
- Brelon James May
- B08 - CLEANING
Information Patent Grant
Device and method for continuous VGF crystal growth through reverse...
- Patent number 12,188,145
- Issue date Jan 7, 2025
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Shujie Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating hexagonal boron nitride
- Patent number 12,180,584
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of A-B crystals without crystal lattice curvature
- Patent number 12,168,839
- Issue date Dec 17, 2024
- Freiberger Compound Materials GMBH
- Berndt Weinert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,163,249
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Control of basal plane dislocations in large aluminum nitride crystals
- Patent number 12,163,250
- Issue date Dec 10, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar III-nitride binary and ternary materials, method for obta...
- Patent number 12,148,612
- Issue date Nov 19, 2024
- Mengyao Xie
- C30 - CRYSTAL GROWTH
Information Patent Grant
Joined body, laser oscillator, laser amplifier, and joined body man...
- Patent number 12,142,888
- Issue date Nov 12, 2024
- National Institute for Materials Science
- Hiroaki Furuse
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a nitride layer
- Patent number 12,134,836
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing nitride semiconductor light-emitting element
- Patent number 12,132,145
- Issue date Oct 29, 2024
- Nichia Corporation
- Tomoya Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride single crystal substrate and method for productio...
- Patent number 12,116,697
- Issue date Oct 15, 2024
- Tokuyama Corporation
- Toru Nagashima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for synthesizing indium phosphide by liquid phosphorus inje...
- Patent number 12,116,690
- Issue date Oct 15, 2024
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Lijie Fu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Surface emitting laser element and manufacturing method of the same
- Patent number 12,113,333
- Issue date Oct 8, 2024
- Kyoto University
- Susumu Noda
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE
- Publication number 20250079188
- Publication date Mar 6, 2025
- Texas State University
- Raju Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250059675
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING NITRIDE SE...
- Publication number 20250059676
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20250062120
- Publication date Feb 20, 2025
- Kyocera Corporation
- Takehiro NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...
- Publication number 20250054754
- Publication date Feb 13, 2025
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
CONTROL OF BASAL PLANE DISLOCATIONS IN LARGE ALUMINUM NITRIDE CRYSTALS
- Publication number 20250051963
- Publication date Feb 13, 2025
- Robert T. BONDOKOV
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SIN...
- Publication number 20250034751
- Publication date Jan 30, 2025
- TOHOKU UNIVERSITY
- Hiroyuki FUKUYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20250011969
- Publication date Jan 9, 2025
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE PRODUCING METHOD, AND AL...
- Publication number 20250011971
- Publication date Jan 9, 2025
- Tokuyama Corporation
- Masayuki FUKUDA
- B24 - GRINDING POLISHING
Information Patent Application
GAN EPITAXIAL SUBSTRATE
- Publication number 20250003113
- Publication date Jan 2, 2025
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL WAFER
- Publication number 20240429046
- Publication date Dec 26, 2024
- Shin-Etsu Handotai Co., Ltd.
- Toshiki MATSUBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME
- Publication number 20240429680
- Publication date Dec 26, 2024
- Kyoto University
- Susumu NODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
- Publication number 20240420955
- Publication date Dec 19, 2024
- Future Semiconductor Business, Inc
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING NITROGEN COMPOUND
- Publication number 20240410077
- Publication date Dec 12, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Xuelun WANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE
- Publication number 20240401236
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Hiroharu KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH METHOD AND STRUCTURE OF LED EPITAXY
- Publication number 20240405159
- Publication date Dec 5, 2024
- Focus Lightings Tech (Suqian) Co., Ltd.
- Guochang LI
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240401238
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Kentaro NONAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE, SUBSTRATE FOR EP...
- Publication number 20240392474
- Publication date Nov 28, 2024
- NGK Insulators, Ltd.
- Kentaro NONAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...
- Publication number 20240384436
- Publication date Nov 21, 2024
- AXT, Inc.
- Morris Young
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE
- Publication number 20240384435
- Publication date Nov 21, 2024
- NGK Insulators, Ltd.
- Hirohisa OGAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240376636
- Publication date Nov 14, 2024
- Sumitomo Chemical Company, Limited
- Takashi SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE
- Publication number 20240376635
- Publication date Nov 14, 2024
- NGK Insulators, Ltd.
- Hiroharu KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379352
- Publication date Nov 14, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20240368804
- Publication date Nov 7, 2024
- Sumitomo Chemical Company, Limited
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240371628
- Publication date Nov 7, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL MATERIALS AND FORMING MET...
- Publication number 20240363343
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Jui CHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20240352623
- Publication date Oct 24, 2024
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III ELEMENT NITRIDE SUBSTRATE AND PRODUCTION METHOD FOR GROUP...
- Publication number 20240344238
- Publication date Oct 17, 2024
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- C30 - CRYSTAL GROWTH

AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Hydrogen recycle system and hydrogen recycle method

Multilayer film structure and method for producing same

Apparatus and method for manufacturing hexagonal crystals

Semiconductor wafer and method for manufacturing same

Method for stripping gallium nitride substrate

Aluminum nitride single crystals having large crystal augmentation...

High Sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...

Group III nitride substrate with oxygen gradient, method of making,...

Polycrystalline ceramic substrate and method of manufacture

Engineered substrate structures for power and RF applications

Epitaxial alkali halide layers for III-V substrate recycling

Device and method for continuous VGF crystal growth through reverse...

Method of fabricating hexagonal boron nitride

Preparation method for semiconductor structure

Incorporating semiconductors on a polycrystalline diamond substrate

Growth of A-B crystals without crystal lattice curvature

Crystal growth method and a substrate for a semiconductor device

Ground substrate and method for producing same

Control of basal plane dislocations in large aluminum nitride crystals

Optimized heteroepitaxial growth of semiconductors

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Non-polar III-nitride binary and ternary materials, method for obta...

Joined body, laser oscillator, laser amplifier, and joined body man...

Method for producing a nitride layer

Nitride semiconductor template, method for manufacturing nitride se...

Method of manufacturing nitride semiconductor light-emitting element

Group III nitride single crystal substrate and method for productio...

Process for synthesizing indium phosphide by liquid phosphorus inje...

Optimized heteroepitaxial growth of semiconductors

Surface emitting laser element and manufacturing method of the same

Patents Applicationslast 30 patents

INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING NITRIDE SE...

SEMICONDUCTOR SUBSTRATE

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...

CONTROL OF BASAL PLANE DISLOCATIONS IN LARGE ALUMINUM NITRIDE CRYSTALS

METHOD OF PRODUCING SINGLE CRYSTAL AlN, SINGLE CRYSTAL AlN, AND SIN...

GROUP 13 NITRIDE SINGLE CRYSTAL SUBSTRATE

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE PRODUCING METHOD, AND AL...

GAN EPITAXIAL SUBSTRATE

METHOD FOR PRODUCING HETEROEPITAXIAL WAFER

SURFACE EMITTING LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME

FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

METHOD AND APPARATUS FOR PRODUCING NITROGEN COMPOUND

ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE

GROWTH METHOD AND STRUCTURE OF LED EPITAXY

LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE

GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE, SUBSTRATE FOR EP...

LOW ETCH PIT DENSITY, LOW SLIP LINE DENSITY, AND LOW STRAIN INDIUM...

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

ALN SINGLE CRYSTAL SUBSTRATE

GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE

ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL MATERIALS AND FORMING MET...

GROUP-III NITRIDE SUBSTRATE

GROUP III ELEMENT NITRIDE SUBSTRATE AND PRODUCTION METHOD FOR GROUP...