arranged in a direction perpendicular to the substrate

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/2481arranged in a direction perpendicular to the substrate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forced current access with voltage clamping in cross-point array
- Patent number 11,688,446
- Issue date Jun 27, 2023
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- G11 - INFORMATION STORAGE
Information Patent Grant
Forced current access with voltage clamping in cross-point array
- Patent number 11,682,442
- Issue date Jun 20, 2023
- SanDisk Technologies LLC
- Michael Nicolas Albert Tran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory systems with vertical integration
- Patent number 11,676,641
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,672,130
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jonguk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,672,131
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Yumin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite electrode material chemistry
- Patent number 11,659,778
- Issue date May 23, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Replacement gate formation in memory
- Patent number 11,652,153
- Issue date May 16, 2023
- Micron Technology, Inc.
- Thomas M. Graettinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices
- Patent number 11,651,995
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Sangkuk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with double protective liner
- Patent number 11,647,638
- Issue date May 9, 2023
- Intel Corporation
- Anna Maria Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,641,749
- Issue date May 2, 2023
- Samsung Electronics Co., Ltd.
- Dong Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive interface material
- Patent number 11,641,788
- Issue date May 2, 2023
- Micron Technology, Inc.
- Andrea Gotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile resistive memory device including a plurality of write...
- Patent number 11,636,895
- Issue date Apr 25, 2023
- Samsung Electronics Co., Ltd.
- Cheaouk Lim
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical nonvolatile memory device including memory cell string
- Patent number 11,631,718
- Issue date Apr 18, 2023
- Samsung Electronics Co., Ltd.
- Jinhong Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Bottom electrode structure in memory device
- Patent number 11,631,810
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Yang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory array with memory cells having a 3D selector and a storag...
- Patent number 11,631,717
- Issue date Apr 18, 2023
- Intel Corporation
- Charles Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
System and device including memristor material
- Patent number 11,631,808
- Issue date Apr 18, 2023
- Rockwell Collins, Inc.
- Kyle B. Snyder
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device
- Patent number 11,631,812
- Issue date Apr 18, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,631,719
- Issue date Apr 18, 2023
- Kioxia Corporation
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efficient fabrication of memory structures
- Patent number 11,626,452
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Don Koun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,621,298
- Issue date Apr 4, 2023
- SK hynix Inc.
- Sung Kil Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and operating method thereof
- Patent number 11,615,841
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Bilal Ahmad Janjua
- G11 - INFORMATION STORAGE
Information Patent Grant
Crossbar array circuit with parallel grounding lines
- Patent number 11,610,942
- Issue date Mar 21, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Grant
Double selector element for low voltage bipolar memory devices
- Patent number 11,605,671
- Issue date Mar 14, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and operating method of the same
- Patent number 11,600,774
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell and memory array select transistor
- Patent number 11,600,663
- Issue date Mar 7, 2023
- Zeno Semiconductor, Inc.
- Jin-Woo Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multitier arrangements of integrated devices, and methods of formin...
- Patent number 11,600,666
- Issue date Mar 7, 2023
- Micron Technology, Inc.
- Lei Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce 3D semiconductor devices and structures with memory
- Patent number 11,600,667
- Issue date Mar 7, 2023
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY AND STORAGE ON A SINGLE CHIP
- Publication number 20240130143
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...
- Publication number 20240099163
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICES WITH A CAVITY BETWEEN ELECTRODES
- Publication number 20240049611
- Publication date Feb 8, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- CURTIS CHUN-I HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER OVONIC THRESHOLD SWITCH (OTS) FOR SWITCHING DEVICES AND...
- Publication number 20240015987
- Publication date Jan 11, 2024
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240008375
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230413699
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Hye Jung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE
- Publication number 20230402095
- Publication date Dec 14, 2023
- SK HYNIX INC.
- Jong Ho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BILAYER ENCAPSULATION OF A MEMORY CELL
- Publication number 20230380307
- Publication date Nov 23, 2023
- Intel Corporation
- Errol Todd Ryan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230371284
- Publication date Nov 16, 2023
- SK HYNIX INC.
- Jae Taek KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SELECTOR
- Publication number 20230371279
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZED PHASE CHANGE MEMORY STRUCTURE TO IMPROVE NUCLEATION TIME...
- Publication number 20230371408
- Publication date Nov 16, 2023
- Intel Corporation
- Lu LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON
- Publication number 20230363297
- Publication date Nov 9, 2023
- Intel Corporation
- Luca Fumagalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF DEPOSITING MEMORY CELL ELECTRODE MATERIALS...
- Publication number 20230354723
- Publication date Nov 2, 2023
- Intel Corporation
- Gowtham Sriram Jawaharram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC-Doped Ge1Sb2Te4 Phase-Change Materials for 3D Crosspoint Memory
- Publication number 20230337559
- Publication date Oct 19, 2023
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE SWITCH
- Publication number 20230320105
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL 1T1R STRUCTURE FOR EMBEDDED MEMORY
- Publication number 20230309325
- Publication date Sep 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPARSE PIERS FOR THREE-DIMENSIONAL MEMORY ARRAYS
- Publication number 20230309426
- Publication date Sep 28, 2023
- Micron Technology, Inc.
- Stephen W. Russell
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS
- Publication number 20230307025
- Publication date Sep 28, 2023
- Micron Technology, Inc.
- Stephen W. Russell
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNOLOGIES FOR CURRENT BIASING FOR MEMORY CELLS
- Publication number 20230307043
- Publication date Sep 28, 2023
- Intel Corporation
- Jonathan Y. Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230301117
- Publication date Sep 21, 2023
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230298632
- Publication date Sep 21, 2023
- SK HYNIX INC.
- Jae Taek KIM
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE
- Publication number 20230292637
- Publication date Sep 14, 2023
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES PERFORMING THRESHOLD SWITCHING
- Publication number 20230292532
- Publication date Sep 14, 2023
- SK HYNIX INC.
- Woo Cheol LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20230284463
- Publication date Sep 7, 2023
- Macronix International Co., Ltd.
- Erh-Kun LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SILICIDE LAYER FOR MEMORY ARRAY
- Publication number 20230276639
- Publication date Aug 31, 2023
- Intel Corporation
- Viswas Reddy Pola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON-NITRIDE-CARBON HARDMASK LAYER
- Publication number 20230260788
- Publication date Aug 17, 2023
- Intel Corporation
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY
- Publication number 20230253038
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Elia Ambrosi
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY STRUCTURE
- Publication number 20230240083
- Publication date Jul 27, 2023
- National Tsing Hua University
- Ya-Chin KING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE RESISTIVE M...
- Publication number 20230240157
- Publication date Jul 27, 2023
- SK HYNIX INC.
- In Ku KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE RESISTIVE M...
- Publication number 20230240084
- Publication date Jul 27, 2023
- SK HYNIX INC.
- In Ku KANG
- H01 - BASIC ELECTRIC ELEMENTS

arranged in a direction perpendicular to the substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Forced current access with voltage clamping in cross-point array

Forced current access with voltage clamping in cross-point array

Memory systems with vertical integration

Two-terminal reversibly switchable memory device

Semiconductor device and method of forming the same

Memory device and method of manufacturing the same

Composite electrode material chemistry

Replacement gate formation in memory

Memory devices

Memory device with double protective liner

Semiconductor device and method for fabricating the same

Resistive interface material

Non-volatile resistive memory device including a plurality of write...

Vertical nonvolatile memory device including memory cell string

Bottom electrode structure in memory device

3D memory array with memory cells having a 3D selector and a storag...

System and device including memristor material

Electronic device

Semiconductor memory device

Efficient fabrication of memory structures

Stackable symmetrical operation memory bit cell structure with bidi...

Electronic device and method for fabricating the same

Memory device and operating method thereof

Crossbar array circuit with parallel grounding lines

Double selector element for low voltage bipolar memory devices

Nonvolatile memory device and operating method of the same

Memory cell and memory array select transistor

Multitier arrangements of integrated devices, and methods of formin...

Method to produce 3D semiconductor devices and structures with memory

Patents Applicationslast 30 patents

MEMORY AND STORAGE ON A SINGLE CHIP

Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...

RESISTIVE MEMORY DEVICES WITH A CAVITY BETWEEN ELECTRODES

MULTI-LAYER OVONIC THRESHOLD SWITCH (OTS) FOR SWITCHING DEVICES AND...

MEMORY DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR MEMORY DEVICE INCLUDING CHALCOGENIDE

BILAYER ENCAPSULATION OF A MEMORY CELL

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MEMORY SELECTOR

OPTIMIZED PHASE CHANGE MEMORY STRUCTURE TO IMPROVE NUCLEATION TIME...

TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON

STRUCTURE AND METHOD OF DEPOSITING MEMORY CELL ELECTRODE MATERIALS...

SiC-Doped Ge1Sb2Te4 Phase-Change Materials for 3D Crosspoint Memory

SOLID-STATE SWITCH

VERTICAL 1T1R STRUCTURE FOR EMBEDDED MEMORY

SPARSE PIERS FOR THREE-DIMENSIONAL MEMORY ARRAYS

WORD LINE STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAYS

TECHNOLOGIES FOR CURRENT BIASING FOR MEMORY CELLS

MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE

SEMICONDUCTOR DEVICES PERFORMING THRESHOLD SWITCHING

MEMORY STRUCTURE AND MANUFACTURING METHOD FOR THE SAME

METAL SILICIDE LAYER FOR MEMORY ARRAY

CARBON-NITRIDE-CARBON HARDMASK LAYER

MEMORY SELECTOR THRESHOLD VOLTAGE RECOVERY

THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY STRUCTURE

RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE RESISTIVE M...

RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE RESISTIVE M...