Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate

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CPC
H01L27/2463

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/2463Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory device including a memory element between wiring layers and...
- Patent number 11,683,942
- Issue date Jun 20, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Jun Sumino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,665,912
- Issue date May 30, 2023
- SK hynix Inc.
- Tae Jung Ha
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array, semiconductor chip and manufacturing method of memory...
- Patent number 11,647,682
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,641,786
- Issue date May 2, 2023
- Commissariat a l'Energie Atomique et aux Energies
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory cell and manufacturing method thereof
- Patent number 11,637,238
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,637,146
- Issue date Apr 25, 2023
- SK Hynix Inc.
- Hwang-Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-component cell architectures for a memory device
- Patent number 11,637,145
- Issue date Apr 25, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Low current RRAM-based crossbar array circuit implemented with swit...
- Patent number 11,616,196
- Issue date Mar 28, 2023
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,616,197
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Ja Bin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming RRAM with a barrier layer
- Patent number 11,611,038
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell, method of forming the same, and semiconductor die
- Patent number 11,605,779
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,600,664
- Issue date Mar 7, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 11,600,665
- Issue date Mar 7, 2023
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device with insulating films adjacent resista...
- Patent number 11,594,677
- Issue date Feb 28, 2023
- Kioxia Corporation
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive element array circuit, resistive element array circuit un...
- Patent number 11,573,122
- Issue date Feb 7, 2023
- TDK Corporation
- Naoki Ohta
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 11,575,019
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,569,419
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-En Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making a memoristic array with an implanted hard mask
- Patent number 11,569,440
- Issue date Jan 31, 2023
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned cross-point phase change memory-switch array
- Patent number 11,563,055
- Issue date Jan 24, 2023
- Micron Technology, Inc.
- Jong Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device and manufacturing method of the same
- Patent number 11,563,172
- Issue date Jan 24, 2023
- SK hynix Inc.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having first memory section and second memory...
- Patent number 11,557,631
- Issue date Jan 17, 2023
- Samsung Electronics Co., Ltd.
- Kilho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices with selectors
- Patent number 11,557,630
- Issue date Jan 17, 2023
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor storage device
- Patent number 11,557,538
- Issue date Jan 17, 2023
- Kioxia Corporation
- Yusuke Niki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,557,344
- Issue date Jan 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device, memory array and method of forming the same
- Patent number 11,552,128
- Issue date Jan 10, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,552,129
- Issue date Jan 10, 2023
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device
- Patent number 11,545,214
- Issue date Jan 3, 2023
- Samsung Electronics Co., Ltd.
- Masayuki Terai
- G11 - INFORMATION STORAGE
Information Patent Grant
Tapered memory cell profiles
- Patent number 11,545,625
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of electrodes for memory cells
- Patent number 11,545,623
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL ARRAY STRUCTURE HAVING BIT LINE FOR REDUCING SIGNAL RES...
- Publication number 20240196629
- Publication date Jun 13, 2024
- GLOBAL FOUNDRIES U.S. Inc.
- Sandeep PURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE
- Publication number 20240188455
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...
- Publication number 20240164224
- Publication date May 16, 2024
- United Microelectronics Corp.
- Kai-Jiun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240130254
- Publication date Apr 18, 2024
- United Microelectronics Corp.
- Yen-Min TING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS
- Publication number 20240130142
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER
- Publication number 20240130255
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Robert Viktor Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...
- Publication number 20240114813
- Publication date Apr 4, 2024
- TetraMem Inc.
- Mingche Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Boron Surface Passivation of Phase Change Memory Material
- Publication number 20240099166
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS
- Publication number 20240090350
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM
- Publication number 20240090353
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Samuel Sung Shik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED METAL SIGNAL RAIL FOR MEMORY ARRAYS
- Publication number 20240079326
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Biswanath Senapati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS
- Publication number 20240081159
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20240081158
- Publication date Mar 7, 2024
- UNITED MICROELECTRONICS CORP.
- Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE HAVING THE MEMORY DEVICE
- Publication number 20240049477
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH HIGH WORK FUNCTION CAP
- Publication number 20240040940
- Publication date Feb 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240040938
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240015989
- Publication date Jan 11, 2024
- SK HYNIX INC.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...
- Publication number 20230422643
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230422642
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATION METHOD THE...
- Publication number 20230413698
- Publication date Dec 21, 2023
- UNITED MICROELECTRONICS CORP.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CURRENT PHASE-CHANGE MEMORY DEVICE
- Publication number 20230397510
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230380192
- Publication date Nov 23, 2023
- SK HYNIX INC.
- Jong Min YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230380191
- Publication date Nov 23, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiaoguang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuitry, Array Of Cross-Point Memory Cells, Method Use...
- Publication number 20230371282
- Publication date Nov 16, 2023
- Micron Technology, Inc.
- David A. Kewley
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...
- Publication number 20230371407
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Watson Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODES OF SEMICONDUCTOR MEMORY DEVICES HAVING CORNERS OF ACUTE...
- Publication number 20230320240
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE
- Publication number 20230309428
- Publication date Sep 28, 2023
- KIOXIA Corporation
- Kenji FUKUDA
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING ELEMENT AND MEMORY DEVICE
- Publication number 20230301205
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Taichi IGARASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20230301209
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Hiroyuki ODE
- H01 - BASIC ELECTRIC ELEMENTS

Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory device including a memory element between wiring layers and...

Electronic device and method for fabricating the same

Oxide-based resistive memory having a plasma-exposed bottom electrode

Memory array, semiconductor chip and manufacturing method of memory...

Memory device

Resistive random-access memory cell and manufacturing method thereof

Electronic device and method for fabricating the same

Multi-component cell architectures for a memory device

Low current RRAM-based crossbar array circuit implemented with swit...

Variable resistance memory device

Method for forming RRAM with a barrier layer

Memory cell, method of forming the same, and semiconductor die

Memory devices and methods of forming memory devices

Cross-point memory and methods for fabrication of same

Semiconductor storage device with insulating films adjacent resista...

Resistive element array circuit, resistive element array circuit un...

Semiconductor device

Semiconductor device and manufacturing method thereof

Making a memoristic array with an implanted hard mask

Self-aligned cross-point phase change memory-switch array

Variable resistance memory device and manufacturing method of the same

Semiconductor device having first memory section and second memory...

Quantum dot devices with selectors

Semiconductor storage device

Resistive random access memory device

Memory device, memory array and method of forming the same

Semiconductor memory device having variable resistance elements pro...

Resistive memory device

Tapered memory cell profiles

Fabrication of electrodes for memory cells

Patents Applicationslast 30 patents

MEMORY CELL ARRAY STRUCTURE HAVING BIT LINE FOR REDUCING SIGNAL RES...

PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS

STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER

CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

Boron Surface Passivation of Phase Change Memory Material

MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM

BURIED METAL SIGNAL RAIL FOR MEMORY ARRAYS

PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS

RRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

MEMORY DEVICE AND SEMICONDUCTOR DIE HAVING THE MEMORY DEVICE

RRAM WITH HIGH WORK FUNCTION CAP

MEMORY DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE

RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATION METHOD THE...

LOW CURRENT PHASE-CHANGE MEMORY DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Integrated Circuitry, Array Of Cross-Point Memory Cells, Method Use...

RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...

ELECTRODES OF SEMICONDUCTOR MEMORY DEVICES HAVING CORNERS OF ACUTE...

STORAGE DEVICE

SWITCHING ELEMENT AND MEMORY DEVICE

SEMICONDUCTOR STORAGE DEVICE