based on II-VI materials

Industry

CPC
H01S5/2211

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Parent Industries

HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S5/00Semiconductor lasers

Current Industry

H01S5/2211based on II-VI materials

Industries

Patents Grantslast 30 patents

Information Patent Grant
Injector laser
- Patent number 7,787,508
- Issue date Aug 31, 2010
- General Nano Optics Limited
- Vasily Ivanovich Shveykin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor laser
- Patent number 7,042,011
- Issue date May 9, 2006
- Sharp Kabushiki Kaisha
- Kunihiro Takatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor laser
- Patent number 6,855,570
- Issue date Feb 15, 2005
- Sharp Kabushiki Kaisha
- Kunihiro Takatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor laser
- Patent number 6,597,716
- Issue date Jul 22, 2003
- Sharp Kabushiki Kaisha
- Kunihiro Takatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser, and manufacturing method thereof, semiconducto...
- Patent number 6,577,662
- Issue date Jun 10, 2003
- Sony Corporation
- Takeharu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for fabricating the...
- Patent number 5,822,347
- Issue date Oct 13, 1998
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Laser-emitting component having an injection zone of limited width
- Patent number 5,818,863
- Issue date Oct 6, 1998
- France Telecom
- Bernard Nabet
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Surface emitting semiconductor laser and its manufacturing process
- Patent number 5,625,637
- Issue date Apr 29, 1997
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser, method and apparatus for...
- Patent number 5,621,750
- Issue date Apr 15, 1997
- Seiko Epson Corporation
- Hideaki Iwano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making surface emission type semiconductor laser
- Patent number 5,587,335
- Issue date Dec 24, 1996
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor devices and methods of making compound semic...
- Patent number 5,585,649
- Issue date Dec 17, 1996
- Kabushiki Kaisha Toshiba
- Masayuki Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
II-VI Semiconductor diode laser with lateral current confinement
- Patent number 5,544,190
- Issue date Aug 6, 1996
- Phillips Electronics North America Corporation
- Piotr M. Mensz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a buried-ridge II-VI laser diode
- Patent number 5,538,918
- Issue date Jul 23, 1996
- Minnesota Mining and Manufacturing Company
- Michael A. Haase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,537,666
- Issue date Jul 16, 1996
- Seiko Epson Coropration
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
II-VI compound semiconductor laser with burying layers
- Patent number 5,519,722
- Issue date May 21, 1996
- NEC Corporation
- Hiroshi Iwata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor element having bivalent and VI group element and an i...
- Patent number 5,488,234
- Issue date Jan 30, 1996
- Matsushita Electric Industrial Co., Ltd.
- Shigeo Yoshii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,436,922
- Issue date Jul 25, 1995
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,404,369
- Issue date Apr 4, 1995
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried ridge II-VI laser diode
- Patent number 5,404,027
- Issue date Apr 4, 1995
- Minnesota Mining & Manufacturing Compay
- Michael A. Haase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Graded composition ohmic contact for P-type II-VI semiconductors
- Patent number 5,396,103
- Issue date Mar 7, 1995
- Minnesota Mining and Manufacturing Company
- Jun Oiu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Surface emitting semiconductor laser and method of manufacture
- Patent number 5,375,133
- Issue date Dec 20, 1994
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making surface emission type semiconductor laser
- Patent number 5,356,832
- Issue date Oct 18, 1994
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,317,584
- Issue date May 31, 1994
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,295,148
- Issue date Mar 15, 1994
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contact for p-type group II-IV compound semiconductors
- Patent number 5,274,269
- Issue date Dec 28, 1993
- Minnesota Mining and Manufacturing Company
- James M. DePuydt
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device and a method for producing the same
- Patent number 5,228,047
- Issue date Jul 13, 1993
- Sharp Kabushiki Kaisha
- Mitsuhiro Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,182,757
- Issue date Jan 26, 1993
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,181,219
- Issue date Jan 19, 1993
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,181,221
- Issue date Jan 19, 1993
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device suitable for optical communications syst...
- Patent number 5,170,404
- Issue date Dec 8, 1992
- Hitachi, Ltd.
- Tsukuru Ohtoshi
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE...
- Publication number 20110298006
- Publication date Dec 8, 2011
- PANASONIC CORPORATION
- Hiroyuki HAGINO
- B82 - NANO-TECHNOLOGY
Information Patent Application
Injector Laser
- Publication number 20080192789
- Publication date Aug 14, 2008
- GENERAL NANO OPTICS LIMITED
- Vasily Ivanovich Shveykin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor laser
- Publication number 20050135447
- Publication date Jun 23, 2005
- Sharp Kabushiki Kaisha
- Kunihiro Takatani
- B82 - NANO-TECHNOLOGY
Information Patent Application
Compound semiconductor laser
- Publication number 20030206567
- Publication date Nov 6, 2003
- Kunihiro Takatani
- B82 - NANO-TECHNOLOGY

based on II-VI materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Injector laser

Compound semiconductor laser

Compound semiconductor laser

Compound semiconductor laser

Semiconductor laser, and manufacturing method thereof, semiconducto...

Semiconductor light emitting device and method for fabricating the...

Laser-emitting component having an injection zone of limited width

Surface emitting semiconductor laser and its manufacturing process

Surface emission type semiconductor laser, method and apparatus for...

Method of making surface emission type semiconductor laser

Compound semiconductor devices and methods of making compound semic...

II-VI Semiconductor diode laser with lateral current confinement

Method of fabricating a buried-ridge II-VI laser diode

Surface emission type semiconductor laser

II-VI compound semiconductor laser with burying layers

Semiconductor element having bivalent and VI group element and an i...

Surface emission type semiconductor laser

Surface emission type semiconductor laser

Buried ridge II-VI laser diode

Graded composition ohmic contact for P-type II-VI semiconductors

Surface emitting semiconductor laser and method of manufacture

Method of making surface emission type semiconductor laser

Surface emission type semiconductor laser

Surface emission type semiconductor laser

Ohmic contact for p-type group II-IV compound semiconductors

Semiconductor laser device and a method for producing the same

Surface emission type semiconductor laser

Surface emission type semiconductor laser

Surface emission type semiconductor laser

Semiconductor laser device suitable for optical communications syst...

Patents Applicationslast 30 patents

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE...

Injector Laser

Compound semiconductor laser

Compound semiconductor laser