based on solid-state phase change

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H01L45/06

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/06based on solid-state phase change

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,706,934
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for enlarging the memory window and improving data retentio...
- Patent number 11,682,456
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with a phase change layer and particula...
- Patent number 11,678,593
- Issue date Jun 13, 2023
- Kioxia Corporation
- Katsuyoshi Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,672,132
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Tae Hong Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,672,130
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jonguk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,672,131
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Yumin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 11,665,907
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Hwa Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional semiconductor memory devices
- Patent number 11,665,914
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Si-Ho Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory structure with efficient heating system
- Patent number 11,659,780
- Issue date May 23, 2023
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite electrode material chemistry
- Patent number 11,659,778
- Issue date May 23, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Phase-change memory cell
- Patent number 11,653,579
- Issue date May 16, 2023
- Paolo Giuseppe Cappelletti
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices
- Patent number 11,651,995
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Sangkuk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,653,505
- Issue date May 16, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnection structure of an integrated circuit
- Patent number 11,653,577
- Issue date May 16, 2023
- STMicroelectronics (Crolles 2) SAS
- Jean-Philippe Reynard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase-change material-based XOR logic gates
- Patent number 11,653,578
- Issue date May 16, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile tunable capacitive processing unit
- Patent number 11,647,684
- Issue date May 9, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal programmable conducting bridges between conductive lines
- Patent number 11,640,937
- Issue date May 2, 2023
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,641,749
- Issue date May 2, 2023
- Samsung Electronics Co., Ltd.
- Dong Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive interface material
- Patent number 11,641,788
- Issue date May 2, 2023
- Micron Technology, Inc.
- Andrea Gotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,641,786
- Issue date May 2, 2023
- Commissariat a l'Energie Atomique et aux Energies
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile resistive memory device including a plurality of write...
- Patent number 11,636,895
- Issue date Apr 25, 2023
- Samsung Electronics Co., Ltd.
- Cheaouk Lim
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked memory structure with insulating patterns
- Patent number 11,637,124
- Issue date Apr 25, 2023
- SK hynix Inc.
- Changhan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming resistive memory cell having an ovonic threshold...
- Patent number 11,637,144
- Issue date Apr 25, 2023
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quasicrystalline material and semiconductor device applying the same
- Patent number 11,634,793
- Issue date Apr 25, 2023
- Samsung Electronics Co., Ltd.
- Eunsung Lee
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Multi-component cell architectures for a memory device
- Patent number 11,637,145
- Issue date Apr 25, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
WSiGe electrode structures for memory devices, and associated devic...
- Patent number 11,631,811
- Issue date Apr 18, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 11,631,812
- Issue date Apr 18, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display panel and display device with blocking metal wire in contro...
- Patent number 11,630,333
- Issue date Apr 18, 2023
- Shanghai Tianma Micro-Electronics Co., Ltd.
- Shaolong Ma
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Efficient fabrication of memory structures
- Patent number 11,626,452
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Don Koun Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY
- Publication number 20240215462
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION
- Publication number 20240196766
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Matthew Joseph BrightSky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELEC...
- Publication number 20240196628
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY
- Publication number 20240180047
- Publication date May 30, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING
- Publication number 20240147874
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY AND STORAGE ON A SINGLE CHIP
- Publication number 20240130143
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Switch Arrangement
- Publication number 20240122081
- Publication date Apr 11, 2024
- INFINEON TECHNOLOGIES AG
- Valentyn Solomko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
- Publication number 20240114807
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Boron Surface Passivation of Phase Change Memory Material
- Publication number 20240099166
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...
- Publication number 20240099163
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM
- Publication number 20240090353
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Samuel Sung Shik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED METAL SIGNAL RAIL FOR MEMORY ARRAYS
- Publication number 20240079326
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Biswanath Senapati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS
- Publication number 20240081159
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20240074337
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074334
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK SIDE PHASE CHANGE MEMORY
- Publication number 20240074333
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM
- Publication number 20240074336
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE MEMORY DEVICE
- Publication number 20240065119
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE HAVING THE MEMORY DEVICE
- Publication number 20240049477
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240040938
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Bit Storage Device Using Phase Change Material
- Publication number 20240016071
- Publication date Jan 11, 2024
- Toshiba Global Commerce Solutions Holdings Corporation
- Timothy Crockett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...
- Publication number 20240016072
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM DEVICE
- Publication number 20240008373
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chang-Chih Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ULTRA-THIN PCM CELL
- Publication number 20240008374
- Publication date Jan 4, 2024
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240008375
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING BARRIER LAYER BETWEEN ELECTRODE L...
- Publication number 20230422639
- Publication date Dec 28, 2023
- Intel Corporation
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...
- Publication number 20230422643
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230422642
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS
- Publication number 20230422644
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS

based on solid-state phase change

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Cross-point memory array and related fabrication techniques

Methods for enlarging the memory window and improving data retentio...

Semiconductor memory device with a phase change layer and particula...

Variable resistance memory device

Semiconductor device and method of forming the same

Memory device and method of manufacturing the same

Non-volatile memory

Three dimensional semiconductor memory devices

Phase change memory structure with efficient heating system

Composite electrode material chemistry

Phase-change memory cell

Memory devices

Cross-point memory array and related fabrication techniques

Interconnection structure of an integrated circuit

Phase-change material-based XOR logic gates

Nonvolatile tunable capacitive processing unit

Horizontal programmable conducting bridges between conductive lines

Semiconductor device and method for fabricating the same

Resistive interface material

Memory device

Non-volatile resistive memory device including a plurality of write...

Stacked memory structure with insulating patterns

Method of forming resistive memory cell having an ovonic threshold...

Quasicrystalline material and semiconductor device applying the same

Multi-component cell architectures for a memory device

WSiGe electrode structures for memory devices, and associated devic...

Electronic device

Display panel and display device with blocking metal wire in contro...

Efficient fabrication of memory structures

Patents Applicationslast 30 patents

MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY

PHASE-CHANGE MEMORY CELL WITH MIXED-MATERIAL SWITCHABLE REGION

MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELEC...

PHASE CHANGE MEMORY

PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING

MEMORY AND STORAGE ON A SINGLE CHIP

Phase Change Switch Arrangement

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

Boron Surface Passivation of Phase Change Memory Material

Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...

SUB-EUV PATTERNING HEATERS FOR BAR MUSHROOM CELL PCM

BURIED METAL SIGNAL RAIL FOR MEMORY ARRAYS

PHASE CHANGE MULTILAYER HETEROSTRUCTURE WITH MULTIPLE HEATERS

MEMORY DEVICE AND METHOD OF MAKING THE SAME

PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

BACK SIDE PHASE CHANGE MEMORY

SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM

VERTICAL PHASE CHANGE MEMORY DEVICE

MEMORY DEVICE AND SEMICONDUCTOR DIE HAVING THE MEMORY DEVICE

MEMORY DEVICE AND FABRICATION METHOD THEREOF

Multi-Bit Storage Device Using Phase Change Material

MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...

PCM DEVICE

VERTICAL ULTRA-THIN PCM CELL

MEMORY DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE INCLUDING BARRIER LAYER BETWEEN ELECTRODE L...

RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

VERTICAL PHASE CHANGE SWITCH DEVICES AND METHODS