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CPC
C30B25/186

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

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C30B25/186being specially pre-treated by

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Patents Grantslast 30 patents

Information Patent Grant
Method for producing a nitride layer
- Patent number 12,134,836
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer and method of manufacturing semiconductor appar...
- Patent number 12,131,966
- Issue date Oct 29, 2024
- Kabushiki Kaisha Toshiba
- Fuyuma Ito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming monocrystalline nickel-titanium films on single c...
- Patent number 12,116,271
- Issue date Oct 15, 2024
- Arizona Board of Regents on behalf of Arizona State University
- Jagannathan Rajagopalan
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a SiC substrate via an etching step, growth st...
- Patent number 12,098,476
- Issue date Sep 24, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride semiconductor substrate, nitride s...
- Patent number 12,071,707
- Issue date Aug 27, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for silicon germanium uniformity control using multiple pre...
- Patent number 12,057,314
- Issue date Aug 6, 2024
- ASM IP Holding B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single crystal synthetic diamond material
- Patent number 12,037,702
- Issue date Jul 16, 2024
- Element Six Technologies Limited
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrate for epitaxial growth, method for manufacturing the same,...
- Patent number 11,978,627
- Issue date May 7, 2024
- Fujian Jing'An Optoelectronics Co., Ltd.
- Juiping Li
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing GaN layered substrate
- Patent number 11,967,530
- Issue date Apr 23, 2024
- Shin-Etsu Chemical Co., Ltd.
- Sumio Sekiyama
- B32 - LAYERED PRODUCTS
Information Patent Grant
Laminate of aluminum nitride single-crystal substrate
- Patent number 11,952,677
- Issue date Apr 9, 2024
- Tokuyama Corporation
- Masao Ariyuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 11,948,794
- Issue date Apr 2, 2024
- Mitsubishi Electric Corporation
- Masashi Sakai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metal sulfide filled carbon nanotubes and synthesis methods thereof
- Patent number 11,932,966
- Issue date Mar 19, 2024
- The Florida International University Board of Trustees
- Wenzhi Li
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for manufacturing a two-dimensional film of hexagonal cryst...
- Patent number 11,913,134
- Issue date Feb 27, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,901,170
- Issue date Feb 13, 2024
- JX Metals Corporation
- Shunsuke Oka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,894,225
- Issue date Feb 6, 2024
- JX Metals Corporation
- Shunsuke Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal transition metal dichalcogenide thin film and method...
- Patent number 11,859,308
- Issue date Jan 2, 2024
- Research & Business Foundation Sungkyunkwan University
- Ki Kang Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single crystal synthetic diamond material
- Patent number 11,821,107
- Issue date Nov 21, 2023
- Element Six Technologies Limited
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for reducing lateral growth of GaN crystals in an ammonother...
- Patent number 11,821,108
- Issue date Nov 21, 2023
- Instytut Wysokich Cisnien Polskiej Akademii Nauk
- Karolina Grabianska
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,788,203
- Issue date Oct 17, 2023
- JX Metals Corporation
- Shunsuke Oka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride single crystal substrate
- Patent number 11,767,612
- Issue date Sep 26, 2023
- Tokuyama Corporation
- Masayuki Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing monocrystalline graphene
- Patent number 11,685,656
- Issue date Jun 27, 2023
- Research & Business Foundation Sungkyunkwan University
- Jae-Young Choi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing group III nitride semiconductor substrate,...
- Patent number 11,680,339
- Issue date Jun 20, 2023
- Furukawa Co., Ltd.
- Yujiro Ishihara
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,664,428
- Issue date May 30, 2023
- Mitsubishi Chemical Corporation
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28<...
- Patent number 11,624,126
- Issue date Apr 11, 2023
- OHIO STATE INNOVATION FOUNDATION
- Hongping Zhao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for calibrating temperature in chemical vapor deposition
- Patent number 11,610,825
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Fen Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor laminate, semiconductor device, method of man...
- Patent number 11,600,704
- Issue date Mar 7, 2023
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a monocrystalline piezoelectric layer
- Patent number 11,600,766
- Issue date Mar 7, 2023
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Protective diamond coating system and method
- Patent number 11,572,621
- Issue date Feb 7, 2023
- AKHAN SEMICONDUCTOR, INC.
- Adam Khan
- G02 - OPTICS
Information Patent Grant
Metal sulfide filled carbon nanotubes and synthesis methods thereof
- Patent number 11,572,636
- Issue date Feb 7, 2023
- The Florida International University Board of Trustees
- Wenzhi Li
- C01 - INORGANIC CHEMISTRY

Patents Applicationslast 30 patents

Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE, AN...
- Publication number 20240417883
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR WAFER TREATMENT
- Publication number 20240412972
- Publication date Dec 12, 2024
- Hua Hsu Silicon Materials Co., Ltd.
- Chiao-Yang Cheng
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20240368804
- Publication date Nov 7, 2024
- Sumitomo Chemical Company, Limited
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20240371636
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240371628
- Publication date Nov 7, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
NANOCRYSTALLINE DIAMOND WITH AMORPHOUS INTERFACIAL LAYER
- Publication number 20240352621
- Publication date Oct 24, 2024
- Applied Materials, Inc.
- Sze Chieh Tan
- C30 - CRYSTAL GROWTH
Information Patent Application
LARGE AREA DEVICE-QUALITY DIAMOND SUBSTRATES (LADDIS)
- Publication number 20240344236
- Publication date Oct 17, 2024
- Chih Shiue YAN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRE...
- Publication number 20240332016
- Publication date Oct 3, 2024
- ASM IP HOLDING B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO E...
- Publication number 20240301584
- Publication date Sep 12, 2024
- Applied Materials, Inc.
- Christopher S. OLSEN
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20240301585
- Publication date Sep 12, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240282801
- Publication date Aug 22, 2024
- SUMCO CORPORATION
- Takeshi KADONO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MEASURING THICKNESS OF SILICON EPITAXIAL LAYER
- Publication number 20240282646
- Publication date Aug 22, 2024
- Shanghai Huali Integrated Circuit Corporation
- Jiaqi HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Growing Personalized Single Crystal Diamond
- Publication number 20240240354
- Publication date Jul 18, 2024
- PLASMABILITY, LLC
- Robert J. Basnett
- C30 - CRYSTAL GROWTH
Information Patent Application
INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE
- Publication number 20240234544
- Publication date Jul 11, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
- Publication number 20240234141
- Publication date Jul 11, 2024
- KYOCERA CORPORATION
- Katsuaki MASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS OF PROCESSING EPITAXIAL SEMICONDUCTOR WAFERS
- Publication number 20240218562
- Publication date Jul 4, 2024
- GLOBALWAFERS CO., LTD.
- Manabu Hamano
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING EPITAXIAL TEMPLATE LAYER
- Publication number 20240222116
- Publication date Jul 4, 2024
- ASM IP HOLDING B.V.
- Gregory Deye
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
- Publication number 20240203709
- Publication date Jun 20, 2024
- Jusung Engineering Co., Ltd.
- Kyung Ran PARK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
- Publication number 20240183065
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Peter G. Schunemann
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING...
- Publication number 20240183063
- Publication date Jun 6, 2024
- XIAMEN UNIVERSITY
- Junyong KANG
- C30 - CRYSTAL GROWTH
Information Patent Application
MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME
- Publication number 20240158954
- Publication date May 16, 2024
- TOSOH CORPORATION
- Yuya TSUCHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
AMINO ACID DERIVATIVE-CONTAINING ORGANIC MOLECULES FOR IMPROVED OPT...
- Publication number 20240150933
- Publication date May 9, 2024
- Meta Platforms Technologies, LLC
- Scheherzad Alvi
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYSILICON ROD AND METHOD FOR MANUFACTURING POLYSILICON ROD
- Publication number 20240150934
- Publication date May 9, 2024
- Shin-Etsu Chemical Co., Ltd.
- Atsushi YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...
- Publication number 20240141549
- Publication date May 2, 2024
- Peking University
- Xinqiang WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURIN...
- Publication number 20240141552
- Publication date May 2, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
- Publication number 20240136181
- Publication date Apr 25, 2024
- KYOCERA CORPORATION
- Katsuaki MASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PREPARATION METHOD FOR GROWING GERMANIUM SULFIDE (GeS2) SINGLE-CRYS...
- Publication number 20240120431
- Publication date Apr 11, 2024
- SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Guoqiang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-HEAT RING AND SUBSTRATE PROCESSING DEVICE
- Publication number 20240102199
- Publication date Mar 28, 2024
- JIANGSU ALPHA-SEMICONDUCTOR EQUIPMENT CO., LTD.
- LIU Ziqiang
- C30 - CRYSTAL GROWTH

being specially pre-treated by

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing a nitride layer

Semiconductor wafer and method of manufacturing semiconductor appar...

Method of forming monocrystalline nickel-titanium films on single c...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Method for producing a SiC substrate via an etching step, growth st...

Method for manufacturing nitride semiconductor substrate, nitride s...

Methods for silicon germanium uniformity control using multiple pre...

Single crystal synthetic diamond material

Substrate for epitaxial growth, method for manufacturing the same,...

Method for producing GaN layered substrate

Laminate of aluminum nitride single-crystal substrate

Method of manufacturing silicon carbide epitaxial wafer

Metal sulfide filled carbon nanotubes and synthesis methods thereof

Process for manufacturing a two-dimensional film of hexagonal cryst...

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Single crystal transition metal dichalcogenide thin film and method...

Single crystal synthetic diamond material

Method for reducing lateral growth of GaN crystals in an ammonother...

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Group III nitride single crystal substrate

Method for manufacturing monocrystalline graphene

Method of manufacturing group III nitride semiconductor substrate,...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28<...

Method for calibrating temperature in chemical vapor deposition

Nitride semiconductor laminate, semiconductor device, method of man...

Method for manufacturing a monocrystalline piezoelectric layer

Protective diamond coating system and method

Metal sulfide filled carbon nanotubes and synthesis methods thereof

Patents Applicationslast 30 patents

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE, AN...

METHOD FOR WAFER TREATMENT

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

NANOCRYSTALLINE DIAMOND WITH AMORPHOUS INTERFACIAL LAYER

LARGE AREA DEVICE-QUALITY DIAMOND SUBSTRATES (LADDIS)

METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRE...

METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO E...

SILICON CARBIDE EPITAXIAL SUBSTRATE

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

METHOD FOR MEASURING THICKNESS OF SILICON EPITAXIAL LAYER

Method of Growing Personalized Single Crystal Diamond

INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...

METHODS OF PROCESSING EPITAXIAL SEMICONDUCTOR WAFERS

METHOD, SYSTEM AND APPARATUS FOR FORMING EPITAXIAL TEMPLATE LAYER

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS

METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING...

MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME

AMINO ACID DERIVATIVE-CONTAINING ORGANIC MOLECULES FOR IMPROVED OPT...

POLYSILICON ROD AND METHOD FOR MANUFACTURING POLYSILICON ROD

PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...

SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURIN...

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...

PREPARATION METHOD FOR GROWING GERMANIUM SULFIDE (GeS2) SINGLE-CRYS...

PRE-HEAT RING AND SUBSTRATE PROCESSING DEVICE