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C30B25/186

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

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C30B25/186being specially pre-treated by

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Patents Grantslast 30 patents

Information Patent Grant
Substrate for epitaxial growth, method for manufacturing the same,...
- Patent number 11,978,627
- Issue date May 7, 2024
- Fujian Jing'An Optoelectronics Co., Ltd.
- Juiping Li
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing GaN layered substrate
- Patent number 11,967,530
- Issue date Apr 23, 2024
- Shin-Etsu Chemical Co., Ltd.
- Sumio Sekiyama
- B32 - LAYERED PRODUCTS
Information Patent Grant
Laminate of aluminum nitride single-crystal substrate
- Patent number 11,952,677
- Issue date Apr 9, 2024
- Tokuyama Corporation
- Masao Ariyuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 11,948,794
- Issue date Apr 2, 2024
- Mitsubishi Electric Corporation
- Masashi Sakai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metal sulfide filled carbon nanotubes and synthesis methods thereof
- Patent number 11,932,966
- Issue date Mar 19, 2024
- The Florida International University Board of Trustees
- Wenzhi Li
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for manufacturing a two-dimensional film of hexagonal cryst...
- Patent number 11,913,134
- Issue date Feb 27, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,901,170
- Issue date Feb 13, 2024
- JX Metals Corporation
- Shunsuke Oka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,894,225
- Issue date Feb 6, 2024
- JX Metals Corporation
- Shunsuke Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal transition metal dichalcogenide thin film and method...
- Patent number 11,859,308
- Issue date Jan 2, 2024
- Research & Business Foundation Sungkyunkwan University
- Ki Kang Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single crystal synthetic diamond material
- Patent number 11,821,107
- Issue date Nov 21, 2023
- Element Six Technologies Limited
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for reducing lateral growth of GaN crystals in an ammonother...
- Patent number 11,821,108
- Issue date Nov 21, 2023
- Instytut Wysokich Cisnien Polskiej Akademii Nauk
- Karolina Grabianska
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,788,203
- Issue date Oct 17, 2023
- JX Metals Corporation
- Shunsuke Oka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride single crystal substrate
- Patent number 11,767,612
- Issue date Sep 26, 2023
- Tokuyama Corporation
- Masayuki Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing monocrystalline graphene
- Patent number 11,685,656
- Issue date Jun 27, 2023
- Research & Business Foundation Sungkyunkwan University
- Jae-Young Choi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing group III nitride semiconductor substrate,...
- Patent number 11,680,339
- Issue date Jun 20, 2023
- Furukawa Co., Ltd.
- Yujiro Ishihara
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,664,428
- Issue date May 30, 2023
- Mitsubishi Chemical Corporation
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28<...
- Patent number 11,624,126
- Issue date Apr 11, 2023
- OHIO STATE INNOVATION FOUNDATION
- Hongping Zhao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for calibrating temperature in chemical vapor deposition
- Patent number 11,610,825
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Fen Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor laminate, semiconductor device, method of man...
- Patent number 11,600,704
- Issue date Mar 7, 2023
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a monocrystalline piezoelectric layer
- Patent number 11,600,766
- Issue date Mar 7, 2023
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Protective diamond coating system and method
- Patent number 11,572,621
- Issue date Feb 7, 2023
- AKHAN SEMICONDUCTOR, INC.
- Adam Khan
- G02 - OPTICS
Information Patent Grant
Metal sulfide filled carbon nanotubes and synthesis methods thereof
- Patent number 11,572,636
- Issue date Feb 7, 2023
- The Florida International University Board of Trustees
- Wenzhi Li
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Diamond crystal substrate, method for producing diamond crystal sub...
- Patent number 11,505,878
- Issue date Nov 22, 2022
- Adamant Namiki Precision Jewel Co., Ltd.
- Koji Koyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing GaN laminate substrate having front surface wh...
- Patent number 11,479,876
- Issue date Oct 25, 2022
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth methods and structures thereof
- Patent number 11,456,360
- Issue date Sep 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tetsuji Ueno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Two-dimensional AIN material and its preparation method and applica...
- Patent number 11,417,522
- Issue date Aug 16, 2022
- South China University of Technology
- Wenliang Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating a monocrystalline structure
- Patent number 11,380,543
- Issue date Jul 5, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Pierre-Edouard Raynal
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing diamond, diamond, diamond composite substra...
- Patent number 11,371,139
- Issue date Jun 28, 2022
- Sumitomo Electric Industries, Ltd.
- Yoshiki Nishibayashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Structures and method for growing diamond layers
- Patent number 11,348,858
- Issue date May 31, 2022
- Imec VZW
- Paulius Pobedinskas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of exfoliating single crystal materials
- Patent number 11,302,531
- Issue date Apr 12, 2022
- Alliance for Sustainable Energy, LLC
- Andrew Gordon Norman
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
AMINO ACID DERIVATIVE-CONTAINING ORGANIC MOLECULES FOR IMPROVED OPT...
- Publication number 20240150933
- Publication date May 9, 2024
- Meta Platforms Technologies, LLC
- Scheherzad Alvi
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYSILICON ROD AND METHOD FOR MANUFACTURING POLYSILICON ROD
- Publication number 20240150934
- Publication date May 9, 2024
- Shin-Etsu Chemical Co., Ltd.
- Atsushi YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...
- Publication number 20240141549
- Publication date May 2, 2024
- Peking University
- Xinqiang WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURIN...
- Publication number 20240141552
- Publication date May 2, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
- Publication number 20240136181
- Publication date Apr 25, 2024
- KYOCERA CORPORATION
- Katsuaki MASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PREPARATION METHOD FOR GROWING GERMANIUM SULFIDE (GeS2) SINGLE-CRYS...
- Publication number 20240120431
- Publication date Apr 11, 2024
- SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Guoqiang LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-HEAT RING AND SUBSTRATE PROCESSING DEVICE
- Publication number 20240102199
- Publication date Mar 28, 2024
- JIANGSU ALPHA-SEMICONDUCTOR EQUIPMENT CO., LTD.
- LIU Ziqiang
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OP...
- Publication number 20240093403
- Publication date Mar 21, 2024
- Mohammad Reza AZIZIYAN
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL
- Publication number 20240060210
- Publication date Feb 22, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- ANDREW MARK EDMONDS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF SELECTIVE ETCHING OF DIELECTRIC MATERIALS
- Publication number 20240035196
- Publication date Feb 1, 2024
- Applied Materials, Inc.
- Yi-Chiau HUANG
- B08 - CLEANING
Information Patent Application
SINGLE-CRYSTALLINE STACK STRUCTURE OF TWO-DIMENSIONAL TRANSITION ME...
- Publication number 20240035199
- Publication date Feb 1, 2024
- Research & Business Foundation SUNGKYUNKWAN UNIVERSITY
- Ki Kang KIM
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR MANUFACTURING A TWO-DIMENSIONAL FILM OF HEXAGONAL CRYST...
- Publication number 20230416940
- Publication date Dec 28, 2023
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-...
- Publication number 20230411140
- Publication date Dec 21, 2023
- SOITEC
- Eric Guiot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20230407521
- Publication date Dec 21, 2023
- Tokuyama Corporation
- Masayuki FUKUDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHI...
- Publication number 20230392289
- Publication date Dec 7, 2023
- JX NIPPON MINING & METALS CORPORATION
- Kodai YAMAGISHI
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHI...
- Publication number 20230378274
- Publication date Nov 23, 2023
- JX NIPPON MINING & METALS CORPORATION
- Kodai YAMAGISHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON WAFER, METHOD FOR PRODUCING SAME, AND METHOD FOR...
- Publication number 20230317761
- Publication date Oct 5, 2023
- SUMCO CORPORATION
- Ryo HIROSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCT...
- Publication number 20230295837
- Publication date Sep 21, 2023
- Kokusai Electric Corporation
- Kaichiro MINAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEMS AND METHODS FOR PROCESSING THE SURFACE OF AN EPITAXIALLY GR...
- Publication number 20230265582
- Publication date Aug 24, 2023
- ASM IP HOLDING B.V.
- Gregory Deye
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL PIECE OF MONOCRYSTALLINE SILICON
- Publication number 20230257906
- Publication date Aug 17, 2023
- Siltronic AG
- Sergiy BALANETSKYY
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20230253461
- Publication date Aug 10, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SINGLE CRYSTAL SUBSTRATE FOR VAPOR PHASE GROWTH, VAPOR PHAS...
- Publication number 20230235481
- Publication date Jul 27, 2023
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR WASHING ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, METHO...
- Publication number 20230227997
- Publication date Jul 20, 2023
- Tokuyama Corporation
- Masayuki FUKUDA
- B08 - CLEANING
Information Patent Application
METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK...
- Publication number 20230223258
- Publication date Jul 13, 2023
- ASM IP Holding B.V.
- Dieter Pierreux
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF EPITAXIALLY GROWING BORON-CONTAINING STRUCTURES
- Publication number 20230223257
- Publication date Jul 13, 2023
- Applied Materials, Inc.
- Xuebin LI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
COMPOSITE SUBSTRATES INCLUDING EPITAXIAL MONOCRYSTALLINE PIEZOELECT...
- Publication number 20230217832
- Publication date Jul 6, 2023
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL REACTOR SYSTEMS AND METHODS OF USING SAME
- Publication number 20230203706
- Publication date Jun 29, 2023
- ASM IP HOLDING B.V.
- Alexandros Demos
- C30 - CRYSTAL GROWTH
Information Patent Application
METAL SULFIDE FILLED CARBON NANOTUBES AND SYNTHESIS METHODS THEREOF
- Publication number 20230203712
- Publication date Jun 29, 2023
- THE FLORIDA INTERNATIONAL UNIVERSITY BOARD OF TRUSTEES
- Wenzhi Li
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EPITAXIAL ALKALI HALIDE LAYERS FOR III-V SUBSTRATE RECYCLING
- Publication number 20230197436
- Publication date Jun 22, 2023
- ALLIANCE FOR SUSTAINABLE ENERGY, LLC
- Brelon James MAY
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING A SELF-SUPPORTING SUBSTRATE
- Publication number 20230175167
- Publication date Jun 8, 2023
- Yiguan information technology (Shanghai) Co., Ltd.
- Tao Jiang
- C30 - CRYSTAL GROWTH

being specially pre-treated by

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Substrate for epitaxial growth, method for manufacturing the same,...

Method for producing GaN layered substrate

Laminate of aluminum nitride single-crystal substrate

Method of manufacturing silicon carbide epitaxial wafer

Metal sulfide filled carbon nanotubes and synthesis methods thereof

Process for manufacturing a two-dimensional film of hexagonal cryst...

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Single crystal transition metal dichalcogenide thin film and method...

Single crystal synthetic diamond material

Method for reducing lateral growth of GaN crystals in an ammonother...

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Group III nitride single crystal substrate

Method for manufacturing monocrystalline graphene

Method of manufacturing group III nitride semiconductor substrate,...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Deposition of single phase beta-(AlxGa1-x)2O3 thin films with 0.28<...

Method for calibrating temperature in chemical vapor deposition

Nitride semiconductor laminate, semiconductor device, method of man...

Method for manufacturing a monocrystalline piezoelectric layer

Protective diamond coating system and method

Metal sulfide filled carbon nanotubes and synthesis methods thereof

Diamond crystal substrate, method for producing diamond crystal sub...

Method for producing GaN laminate substrate having front surface wh...

Epitaxial growth methods and structures thereof

Two-dimensional AIN material and its preparation method and applica...

Method for fabricating a monocrystalline structure

Method of manufacturing diamond, diamond, diamond composite substra...

Structures and method for growing diamond layers

Methods of exfoliating single crystal materials

Patents Applicationslast 30 patents

AMINO ACID DERIVATIVE-CONTAINING ORGANIC MOLECULES FOR IMPROVED OPT...

POLYSILICON ROD AND METHOD FOR MANUFACTURING POLYSILICON ROD

PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON...

SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURIN...

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...

PREPARATION METHOD FOR GROWING GERMANIUM SULFIDE (GeS2) SINGLE-CRYS...

PRE-HEAT RING AND SUBSTRATE PROCESSING DEVICE

METHOD AND SYSTEM FOR MANUFACTURING AN OPTOELECTRONIC DEVICE AND OP...

SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL

METHOD OF SELECTIVE ETCHING OF DIELECTRIC MATERIALS

SINGLE-CRYSTALLINE STACK STRUCTURE OF TWO-DIMENSIONAL TRANSITION ME...

PROCESS FOR MANUFACTURING A TWO-DIMENSIONAL FILM OF HEXAGONAL CRYST...

METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-...

GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE

INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHI...

INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHI...

EPITAXIAL SILICON WAFER, METHOD FOR PRODUCING SAME, AND METHOD FOR...

METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCT...

SYSTEMS AND METHODS FOR PROCESSING THE SURFACE OF AN EPITAXIALLY GR...

CRYSTAL PIECE OF MONOCRYSTALLINE SILICON

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

SILICON SINGLE CRYSTAL SUBSTRATE FOR VAPOR PHASE GROWTH, VAPOR PHAS...

METHOD FOR WASHING ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, METHO...

METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK...

METHODS OF EPITAXIALLY GROWING BORON-CONTAINING STRUCTURES

COMPOSITE SUBSTRATES INCLUDING EPITAXIAL MONOCRYSTALLINE PIEZOELECT...

EPITAXIAL REACTOR SYSTEMS AND METHODS OF USING SAME

METAL SULFIDE FILLED CARBON NANOTUBES AND SYNTHESIS METHODS THEREOF

EPITAXIAL ALKALI HALIDE LAYERS FOR III-V SUBSTRATE RECYCLING

METHOD FOR PREPARING A SELF-SUPPORTING SUBSTRATE