Bipolar junction transistors [BJT]

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H01L29/66234

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66234Bipolar junction transistors [BJT]

Industries

Patents Grantslast 30 patents

Information Patent Grant
Bipolar transistor structures with base having varying horizontal w...
- Patent number 11,916,109
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon structure including protective layer
- Patent number 11,855,086
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical bipolar transistors
- Patent number 11,855,197
- Issue date Dec 26, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with gate over terminals
- Patent number 11,843,038
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an integrated circuit comprising an N-type...
- Patent number 11,823,947
- Issue date Nov 21, 2023
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising a transistor
- Patent number 11,804,521
- Issue date Oct 31, 2023
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for enhancing robustness of ESD device
- Patent number 11,742,236
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having bipolar junction transistors and finFET transistors o...
- Patent number 11,721,691
- Issue date Aug 8, 2023
- MARVELL ASIA PTE. LTD.
- Runzi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection device with deep trench isolation islands
- Patent number 11,658,176
- Issue date May 23, 2023
- Texas Instruments Incorporated
- Zaichen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
OPAMP overload power limit circuit, system, and a method thereof
- Patent number 11,616,504
- Issue date Mar 28, 2023
- Texas Instruments Incorporated
- Sudarshan Udayashankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with elevated extrinsic base and methods to form...
- Patent number 11,588,043
- Issue date Feb 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Viorel C. Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,532,736
- Issue date Dec 20, 2022
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back ballasted vertical NPN transistor
- Patent number 11,521,961
- Issue date Dec 6, 2022
- Texas Instruments Incorporated
- Akram Ali Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit comprising an NLDMOS transistor
- Patent number 11,515,415
- Issue date Nov 29, 2022
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method for bipolar transistor stac...
- Patent number 11,488,950
- Issue date Nov 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved electrostatic discharge or elect...
- Patent number 11,450,657
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsi-Yu Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
OPAMP overload power limit circuit, system, and a method thereof
- Patent number 11,309,882
- Issue date Apr 19, 2022
- Texas Instruments Incorporated
- Sudarshan Udayashankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,302,687
- Issue date Apr 12, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Jie Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a device comprising a bipolar transistor
- Patent number 11,276,752
- Issue date Mar 15, 2022
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with gate over terminals
- Patent number 11,239,330
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic base doping for bipolar junction transistors
- Patent number 11,152,467
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 11,145,741
- Issue date Oct 12, 2021
- STMicroelectronics (Grolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum wire resonant tunneling transistor
- Patent number 11,133,384
- Issue date Sep 28, 2021
- Koucheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a TVS semiconductor device
- Patent number 11,056,480
- Issue date Jul 6, 2021
- Semiconductor Components Industries, LLC
- Yupeng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modeling excess current in irradiated bipolar junction t...
- Patent number 11,017,143
- Issue date May 25, 2021
- Arizona Board of Regents on behalf of Arizona State University
- Hugh James Barnaby
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device
- Patent number 10,978,579
- Issue date Apr 13, 2021
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon structure including protective layer
- Patent number 10,957,697
- Issue date Mar 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor (BJT) for liquid flow biosensing applic...
- Patent number 10,892,346
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for enhancing robustness of ESD device
- Patent number 10,854,501
- Issue date Dec 1, 2020
- Taiwan Semiconductor Manufacturing Company Limited
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection device with deep trench isolation islands
- Patent number 10,790,275
- Issue date Sep 29, 2020
- Texas Instruments Incorporated
- Zaichen Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- Publication number 20240096884
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS
- Publication number 20230378287
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES
- Publication number 20230317774
- Publication date Oct 5, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Alexei SADOVNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURES WITH BASE HAVING VARYING HORIZONTAL W...
- Publication number 20230290829
- Publication date Sep 14, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BIPOLAR TRANSISTORS
- Publication number 20230231041
- Publication date Jul 20, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FO...
- Publication number 20230223462
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANAGING SEMICONDUCTOR LAYERS FOR A BIPOLAR-JUNCTION TRANSISTOR IN...
- Publication number 20230155010
- Publication date May 18, 2023
- CIENA CORPORATION
- Antoine Bois
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SENSOR
- Publication number 20230123050
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20230087058
- Publication date Mar 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING AN N-TYPE LATERALLY DIFFUSED METAL OX...
- Publication number 20230052676
- Publication date Feb 16, 2023
- STMicroelectronics (Crolles 2) SAS
- Jean JIMENEZ MARTINEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM...
- Publication number 20220336646
- Publication date Oct 20, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Viorel C. Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR BIPOLAR TRANSISTOR STAC...
- Publication number 20220254774
- Publication date Aug 11, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPAMP OVERLOAD POWER LIMIT CIRCUIT, SYSTEM, AND A METHOD THEREOF
- Publication number 20220231680
- Publication date Jul 21, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Sudarshan UDAYASHANKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS
- Publication number 20220157953
- Publication date May 19, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE COMPRISING A TRANSISTOR
- Publication number 20220149151
- Publication date May 12, 2022
- STMicroelectronics (Crolles 2) SAS
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING MULTIPLE EMITTER LAYERS
- Publication number 20220093736
- Publication date Mar 24, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mattias DAHLSTROM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20220013654
- Publication date Jan 13, 2022
- STMicroelectronics (Crolles 2) SAS
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quantum Wire Resonant Tunneling Transistor
- Publication number 20210328015
- Publication date Oct 21, 2021
- Koucheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrical performance of bipolar junction transistors
- Publication number 20210296309
- Publication date Sep 23, 2021
- Marvell Asia Pte Ltd
- Runzi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS
- Publication number 20210249516
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Shuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER
- Publication number 20210225840
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPAMP OVERLOAD POWER LIMIT CIRCUIT, SYSTEM, AND A METHOD THEREOF
- Publication number 20210194477
- Publication date Jun 24, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Sudarshan UDAYASHANKAR
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210184022
- Publication date Jun 17, 2021
- Murata Manufacturing Co., Ltd.
- Yasunari UMEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING AN NLDMOS TRANSISTOR AND METHOD FOR M...
- Publication number 20210151600
- Publication date May 20, 2021
- STMicroelectronics (Crolles 2) SAS
- Jean JIMENEZ MARTINEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210134787
- Publication date May 6, 2021
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Jie ZENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE COMPRISING A TRANSISTOR
- Publication number 20210057520
- Publication date Feb 25, 2021
- STMicroelectronics (Crolles 2) SAS
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION DEVICE WITH DEEP TRENCH ISOLATION ISLANDS
- Publication number 20210013193
- Publication date Jan 14, 2021
- TEXAS INSTRUMENTS INCORPORATED
- ZAICHEN CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK BALLASTED VERTICAL NPN TRANSISTOR
- Publication number 20200328204
- Publication date Oct 15, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Akram Ali Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING DEEP COUNTER WELL
- Publication number 20200312837
- Publication date Oct 1, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsi-Yu Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION DEVICE WITH DEEP TRENCH ISOLATION ISLANDS
- Publication number 20200161292
- Publication date May 21, 2020
- TEXAS INSTRUMENTS INCORPORATED
- ZAICHEN CHEN
- H01 - BASIC ELECTRIC ELEMENTS

Bipolar junction transistors [BJT]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bipolar transistor structures with base having varying horizontal w...

Polysilicon structure including protective layer

Vertical bipolar transistors

Bipolar junction transistor with gate over terminals

Method for manufacturing an integrated circuit comprising an N-type...

Device comprising a transistor

Structure and method for enhancing robustness of ESD device

Device having bipolar junction transistors and finFET transistors o...

ESD protection device with deep trench isolation islands

OPAMP overload power limit circuit, system, and a method thereof

Bipolar transistor with elevated extrinsic base and methods to form...

Semiconductor device

Back ballasted vertical NPN transistor

Integrated circuit comprising an NLDMOS transistor

Integrated circuit structure and method for bipolar transistor stac...

Semiconductor device with improved electrostatic discharge or elect...

OPAMP overload power limit circuit, system, and a method thereof

Semiconductor device and method of forming the same

Method for forming a device comprising a bipolar transistor

Bipolar junction transistor with gate over terminals

Extrinsic base doping for bipolar junction transistors

Bipolar transistor

Quantum wire resonant tunneling transistor

Method of forming a TVS semiconductor device

Method for modeling excess current in irradiated bipolar junction t...

Semiconductor device

Polysilicon structure including protective layer

Bipolar junction transistor (BJT) for liquid flow biosensing applic...

Structure and method for enhancing robustness of ESD device

ESD protection device with deep trench isolation islands

Patents Applicationslast 30 patents

METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER

BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS

FALSE COLLECTORS AND GUARD RINGS FOR SEMICONDUCTOR DEVICES

BIPOLAR TRANSISTOR STRUCTURES WITH BASE HAVING VARYING HORIZONTAL W...

VERTICAL BIPOLAR TRANSISTORS

BIPOLAR TRANSISTOR STRUCTURE ON SEMICONDUCTOR FIN AND METHODS TO FO...

MANAGING SEMICONDUCTOR LAYERS FOR A BIPOLAR-JUNCTION TRANSISTOR IN...

DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SENSOR

BIPOLAR TRANSISTORS

INTEGRATED CIRCUIT COMPRISING AN N-TYPE LATERALLY DIFFUSED METAL OX...

BIPOLAR TRANSISTOR WITH ELEVATED EXTRINSIC BASE AND METHODS TO FORM...

INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR BIPOLAR TRANSISTOR STAC...

OPAMP OVERLOAD POWER LIMIT CIRCUIT, SYSTEM, AND A METHOD THEREOF

BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS

DEVICE COMPRISING A TRANSISTOR

DEVICE HAVING MULTIPLE EMITTER LAYERS

BIPOLAR TRANSISTOR

Quantum Wire Resonant Tunneling Transistor

Electrical performance of bipolar junction transistors

BIPOLAR JUNCTION TRANSISTOR WITH GATE OVER TERMINALS

POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER

OPAMP OVERLOAD POWER LIMIT CIRCUIT, SYSTEM, AND A METHOD THEREOF

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT COMPRISING AN NLDMOS TRANSISTOR AND METHOD FOR M...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

DEVICE COMPRISING A TRANSISTOR

ESD PROTECTION DEVICE WITH DEEP TRENCH ISOLATION ISLANDS

BACK BALLASTED VERTICAL NPN TRANSISTOR

SEMICONDUCTOR DEVICE COMPRISING DEEP COUNTER WELL

ESD PROTECTION DEVICE WITH DEEP TRENCH ISOLATION ISLANDS