BJT-like unipolar transistors

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CPC
H01L29/66931

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66931BJT-like unipolar transistors

Industries

Patents Grantslast 30 patents

Information Patent Grant
Digital circuits comprising quantum wire resonant tunneling transis...
- Patent number 11,903,331
- Issue date Feb 13, 2024
- Koucheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Column IV transistors for PMOS integration
- Patent number 11,508,813
- Issue date Nov 22, 2022
- Daedalus Prime LLC
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with high concentration of germanium
- Patent number 11,387,320
- Issue date Jul 12, 2022
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous metal hot electron transistor
- Patent number 11,069,799
- Issue date Jul 20, 2021
- Amorphyx, Incorporated
- Sean William Muir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective germanium P-contact metalization through trench
- Patent number 10,879,353
- Issue date Dec 29, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices having source/drain structure configured with hi...
- Patent number 10,811,496
- Issue date Oct 20, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous metal hot electron transistor
- Patent number 10,672,898
- Issue date Jun 2, 2020
- Amorphyx, Incorporated
- Sean William Muir
- G02 - OPTICS
Information Patent Grant
Selective germanium P-contact metalization through trench
- Patent number 10,553,680
- Issue date Feb 4, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective germanium p-contact metalization through trench
- Patent number 10,304,927
- Issue date May 28, 2019
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a graphene base transistor with reduced collector...
- Patent number 10,158,009
- Issue date Dec 18, 2018
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a lateral insulated gate bipolar transistor
- Patent number 9,853,121
- Issue date Dec 26, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a graphene base transistor with reduced collector...
- Patent number 9,590,081
- Issue date Mar 7, 2017
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hot-electron transistor having multiple MSM sequences
- Patent number 9,543,423
- Issue date Jan 10, 2017
- Carnegie Mellon University
- Yi Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene base transistor with reduced collector area
- Patent number 9,236,432
- Issue date Jan 12, 2016
- The United States of America, as represented by the Secretary of the Navy
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated resonant tunneling diode
- Patent number 8,362,462
- Issue date Jan 29, 2013
- Texas Instruments Incorporated
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating gate control over a resonant tunneling structure in C...
- Patent number 8,008,649
- Issue date Aug 30, 2011
- Board of Regents, The University of Texas System
- Leonard Franklin Register, II
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gated resonant tunneling diode
- Patent number 7,910,918
- Issue date Mar 22, 2011
- Texas Instruments Incorporated
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic component manufacturing method
- Patent number 7,879,679
- Issue date Feb 1, 2011
- STMicroelectronics Crolles 2 SAS
- Oliver Kermarrec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor capacitors in hot (hybrid orientation technology) sub...
- Patent number 7,569,450
- Issue date Aug 4, 2009
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hot carrier transistors and their manufacture
- Patent number 5,744,817
- Issue date Apr 28, 1998
- U.S. Philips Corporation
- John M. Shannon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a quantum device which utilizes the quantum effect
- Patent number 5,562,802
- Issue date Oct 8, 1996
- Matsushita Electric Industrial Co., Ltd.
- Kenji Okada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making an article comprising a semiconductor device
- Patent number 5,496,743
- Issue date Mar 5, 1996
- AT&T Corp.
- Serge Luryi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum device utilizing the quantum effect
- Patent number 5,444,267
- Issue date Aug 22, 1995
- Matsushita Electric Industrial Co., Ltd.
- Kenji Okada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a quantum multi-function semiconductor device
- Patent number 5,371,038
- Issue date Dec 6, 1994
- Motorola, Inc.
- Raymond K. Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using whiskers
- Patent number 5,362,972
- Issue date Nov 8, 1994
- Hitachi, Ltd.
- Masamitsu Yazawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Field effect real space transistor
- Patent number 5,323,030
- Issue date Jun 21, 1994
- The United States of America as represented by the Secretary of the Army
- Thomas E. Koscica
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric self-aligned processing
- Patent number 5,318,916
- Issue date Jun 7, 1994
- Research Triangle Institute
- Paul M. Enquist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Article comprising a real space transfer semiconductor device, and...
- Patent number 5,309,003
- Issue date May 3, 1994
- AT&T Bell Laboratories
- Sergey Luryi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor apparatus
- Patent number 5,279,888
- Issue date Jan 18, 1994
- Rohm Co., Ltd.
- Keita Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for providing high resolution modulation of voltage poten...
- Patent number 5,274,255
- Issue date Dec 28, 1993
- Paul de la Houssaye
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
A NOVEL TRANSISTOR DEVICE
- Publication number 20240021712
- Publication date Jan 18, 2024
- Search For The Next, LTD.
- David SUMMERLAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...
- Publication number 20220271125
- Publication date Aug 25, 2022
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor devices having source/drain structure configured with hi...
- Publication number 20210005712
- Publication date Jan 7, 2021
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS METAL HOT ELECTRON TRANSISTOR
- Publication number 20200259008
- Publication date Aug 13, 2020
- Amorphyx, Incorporated
- Sean William MUIR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH HIGH CONCENTRATION OF GERMANIUM
- Publication number 20200144362
- Publication date May 7, 2020
- Intel Corporation
- ANAND S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GERMANIUM P-CONTACT METALIZATION THROUGH TRENCH
- Publication number 20200127091
- Publication date Apr 23, 2020
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GERMANIUM P-CONTACT METALIZATION THROUGH TRENCH
- Publication number 20190259835
- Publication date Aug 22, 2019
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...
- Publication number 20180342582
- Publication date Nov 29, 2018
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH HIGH CONCENTRATION OF BORON DOPED GERMANIUM
- Publication number 20170221724
- Publication date Aug 3, 2017
- Intel Corporation
- ANAND S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR...
- Publication number 20170125557
- Publication date May 4, 2017
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A LATERAL INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20150303276
- Publication date Oct 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Long-Shih LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HOT-ELECTRON TRANSISTOR HAVING METAL TERMINALS
- Publication number 20150255588
- Publication date Sep 10, 2015
- Carnegie Mellon University
- Yi Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR AREA
- Publication number 20140284552
- Publication date Sep 25, 2014
- The Government of the United States of America, as represented by the Secreta...
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE WITH LOW PARASI...
- Publication number 20140008723
- Publication date Jan 9, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Long-Shih LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED RESONANT TUNNELING DIODE
- Publication number 20110127572
- Publication date Jun 2, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATING GATE CONTROL OVER A RESONANT TUNNELING STRUCTURE IN C...
- Publication number 20100207101
- Publication date Aug 19, 2010
- Board of Regents, The University of Texas System
- Leonard Franklin Register, II
- B82 - NANO-TECHNOLOGY
Information Patent Application
GATED RESONANT TUNNELING DIODE
- Publication number 20100065823
- Publication date Mar 18, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Henry L. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC COMPONENT MANUFACTURING METHOD
- Publication number 20080239625
- Publication date Oct 2, 2008
- STMicroelectronics CROLLES 2 SAS
- Oliver Kermarrec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CAPACITORS IN HOT (HYBRID ORIENTATION TECHNOLOGY) SUB...
- Publication number 20070284640
- Publication date Dec 13, 2007
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

BJT-like unipolar transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Digital circuits comprising quantum wire resonant tunneling transis...

Column IV transistors for PMOS integration

Transistors with high concentration of germanium

Amorphous metal hot electron transistor

Selective germanium P-contact metalization through trench

Transistor devices having source/drain structure configured with hi...

Amorphous metal hot electron transistor

Selective germanium P-contact metalization through trench

Selective germanium p-contact metalization through trench

Method of making a graphene base transistor with reduced collector...

Method of fabricating a lateral insulated gate bipolar transistor

Method of making a graphene base transistor with reduced collector...

Hot-electron transistor having multiple MSM sequences

Graphene base transistor with reduced collector area

Gated resonant tunneling diode

Incorporating gate control over a resonant tunneling structure in C...

Gated resonant tunneling diode

Electronic component manufacturing method

Semiconductor capacitors in hot (hybrid orientation technology) sub...

Hot carrier transistors and their manufacture

Method of producing a quantum device which utilizes the quantum effect

Method of making an article comprising a semiconductor device

Quantum device utilizing the quantum effect

Method of forming a quantum multi-function semiconductor device

Semiconductor device using whiskers

Field effect real space transistor

Symmetric self-aligned processing

Article comprising a real space transfer semiconductor device, and...

Silicon carbide semiconductor apparatus

Structure for providing high resolution modulation of voltage poten...

Patents Applicationslast 30 patents

A NOVEL TRANSISTOR DEVICE

TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...

Transistor devices having source/drain structure configured with hi...

AMORPHOUS METAL HOT ELECTRON TRANSISTOR

TRANSISTORS WITH HIGH CONCENTRATION OF GERMANIUM

SELECTIVE GERMANIUM P-CONTACT METALIZATION THROUGH TRENCH

SELECTIVE GERMANIUM P-CONTACT METALIZATION THROUGH TRENCH

TRANSISTOR DEVICES HAVING SOURCE/DRAIN STRUCTURE CONFIGURED WITH HI...

TRANSISTORS WITH HIGH CONCENTRATION OF BORON DOPED GERMANIUM

METHOD OF MAKING A GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR...

METHOD OF FABRICATING A LATERAL INSULATED GATE BIPOLAR TRANSISTOR

HOT-ELECTRON TRANSISTOR HAVING METAL TERMINALS

GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR AREA

LATERAL INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE WITH LOW PARASI...

GATED RESONANT TUNNELING DIODE

INCORPORATING GATE CONTROL OVER A RESONANT TUNNELING STRUCTURE IN C...

GATED RESONANT TUNNELING DIODE

ELECTRONIC COMPONENT MANUFACTURING METHOD

SEMICONDUCTOR CAPACITORS IN HOT (HYBRID ORIENTATION TECHNOLOGY) SUB...