Breakdown voltage

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CPC
Y10S148/013

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/013Breakdown voltage

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with increased maximum terminal voltage
- Patent number 6,008,512
- Issue date Dec 28, 1999
- Intersil Corporation
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of increasing maximum terminal voltage of a semiconductor de...
- Patent number 5,665,634
- Issue date Sep 9, 1997
- Harris Corporation
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling electrical breakdown in semiconductor power...
- Patent number 5,434,095
- Issue date Jul 18, 1995
- Sundstrand Corporation
- Theodore G. Hollinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor process for manufacturing semiconductor device with i...
- Patent number 5,408,125
- Issue date Apr 18, 1995
- Texas Instruments Incorporated
- John P. Erdeljac
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of mixed thin-film and bulk semiconductor substrate for...
- Patent number 5,399,507
- Issue date Mar 21, 1995
- Motorola, Inc.
- Shih-Wei Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor process for manufacturing semiconductor devices with...
- Patent number 5,330,922
- Issue date Jul 19, 1994
- Texas Instruments Incorporated
- John P. Erdeljac
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a ferroelectric capacitor and forming local interc...
- Patent number 5,273,927
- Issue date Dec 28, 1993
- Micron Technology, Inc.
- Alfred P. Gnadinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a polycrystalline diode having high breakdown
- Patent number 5,248,623
- Issue date Sep 28, 1993
- Nippondenso Co., Ltd.
- Hiroshi Muto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with doped electrical breakdown control region
- Patent number 5,231,474
- Issue date Jul 27, 1993
- Advanced Power Technology, Inc.
- Theodore G. Hollinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self-aligned top gate channel barrier region in i...
- Patent number 5,120,669
- Issue date Jun 9, 1992
- Harris Corporation
- Gregory A. Schrantz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a planar semiconductor device having a guar...
- Patent number 5,028,548
- Issue date Jul 2, 1991
- U.S. Philips Corp.
- Minh-Chau Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a lateral semiconductor structure including f...
- Patent number 4,966,858
- Issue date Oct 30, 1990
- Motorola, Inc.
- Michael P. Masquelier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxynitride storage node dielectric
- Patent number 4,725,560
- Issue date Feb 16, 1988
- International Business Machines Corp.
- John R. Abernathey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of electrically adjusting the zener knee of a lateral polysi...
- Patent number 4,646,427
- Issue date Mar 3, 1987
- Motorola, Inc.
- James T. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for making an avalanche photodiode
- Patent number 4,637,126
- Issue date Jan 20, 1987
- RCA, Inc.
- Alexander W. Lightstone
- H01 - BASIC ELECTRIC ELEMENTS

Breakdown voltage

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with increased maximum terminal voltage

Method of increasing maximum terminal voltage of a semiconductor de...

Method for controlling electrical breakdown in semiconductor power...

Semiconductor process for manufacturing semiconductor device with i...

Fabrication of mixed thin-film and bulk semiconductor substrate for...

Semiconductor process for manufacturing semiconductor devices with...

Method of making a ferroelectric capacitor and forming local interc...

Method for making a polycrystalline diode having high breakdown

Semiconductor device with doped electrical breakdown control region

Method of forming self-aligned top gate channel barrier region in i...

Method of manufacturing a planar semiconductor device having a guar...

Method of fabricating a lateral semiconductor structure including f...

Silicon oxynitride storage node dielectric

Method of electrically adjusting the zener knee of a lateral polysi...

Method for making an avalanche photodiode

Patents Applicationslast 30 patents