by conversion of electrode material

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CPC
H01L45/1633

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1633by conversion of electrode material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Sub-stoichiometric metal-oxide thin films
- Patent number 11,646,199
- Issue date May 9, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-rectifying resistive memory and fabrication method thereof
- Patent number 11,641,787
- Issue date May 2, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capped contact structure with variable adhesion layer thickness
- Patent number 11,569,445
- Issue date Jan 31, 2023
- Macronix International Co., Ltd.
- Yu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Correlated electron device formed via conversion of conductive subs...
- Patent number 11,522,133
- Issue date Dec 6, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 11,502,249
- Issue date Nov 15, 2022
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Additively manufactured resistive switch
- Patent number 11,283,020
- Issue date Mar 22, 2022
- UNM Rainforest Innovations
- Lok-kun Tsui
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance random access memory and method for fabricating the same
- Patent number 11,245,074
- Issue date Feb 8, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of memory device and fabrication method thereof
- Patent number 11,239,419
- Issue date Feb 1, 2022
- United Microelectronics Corp.
- Hai Tao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Patterning oxidation resistant electrode in crossbar array circuits
- Patent number 11,177,438
- Issue date Nov 16, 2021
- Tetramen Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching memory with replacement metal electrode
- Patent number 11,158,795
- Issue date Oct 26, 2021
- International Business Machines Corporation
- Takashi Ando
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Multivalent oxide spacers for analog switching resistive memory
- Patent number 11,158,793
- Issue date Oct 26, 2021
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory and method of manufacturing the same
- Patent number 11,101,325
- Issue date Aug 24, 2021
- TOSHIBA MEMORY CORPORATION
- Masahiro Kiyotoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-stoichiometric metal-oxide thin films
- Patent number 11,081,343
- Issue date Aug 3, 2021
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device formed from correlated electron material
- Patent number 11,011,701
- Issue date May 18, 2021
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and a method for forming the memory device
- Patent number 10,903,272
- Issue date Jan 26, 2021
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cells and precursors thereof, methods of making th...
- Patent number 10,897,009
- Issue date Jan 19, 2021
- Intel Corporation
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 10,833,125
- Issue date Nov 10, 2020
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten oxide RRAM with barrier free structure
- Patent number 10,811,602
- Issue date Oct 20, 2020
- Macronix International Co., Ltd.
- Erh-Kun Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 10,797,106
- Issue date Oct 6, 2020
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive switching memory with replacement metal electrode
- Patent number 10,727,407
- Issue date Jul 28, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor manu...
- Patent number 10,727,278
- Issue date Jul 28, 2020
- TOSHIBA MEMORY CORPORATION
- Tsubasa Imamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having a phase change material
- Patent number 10,700,272
- Issue date Jun 30, 2020
- TOSHIBA MEMORY CORPORATION
- Kazuhiro Katono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with laterally offset BEVA/TEVA
- Patent number 10,700,275
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming and operating memory devices that utilize correlated electr...
- Patent number 10,700,280
- Issue date Jun 30, 2020
- ARM Limited
- Glen Arnold Rosendale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selection device for use in bipolar resistive memory and manufactur...
- Patent number 10,665,780
- Issue date May 26, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Ming Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM devices and their methods of fabrication
- Patent number 10,658,586
- Issue date May 19, 2020
- Intel Corporation
- James S. Clarke
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device including semiconductor memory having different d...
- Patent number 10,649,689
- Issue date May 12, 2020
- SK Hynix Inc.
- Nam-Kyun Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for fabrication of a CEM device
- Patent number 10,566,527
- Issue date Feb 18, 2020
- ARM, Ltd.
- Ming He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a resistive random access memory; having r...
- Patent number 10,547,002
- Issue date Jan 28, 2020
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gabriele Navarro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device containing oxygen-modulated hafnium oxide m...
- Patent number 10,516,105
- Issue date Dec 24, 2019
- SanDisk Technologies LLC
- Kosaku Yamashita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS
- Publication number 20240090350
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230337556
- Publication date Oct 19, 2023
- United Microelectronics Corp.
- Shu-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE RESISTIVE M...
- Publication number 20230240157
- Publication date Jul 27, 2023
- SK HYNIX INC.
- In Ku KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230135287
- Publication date May 4, 2023
- SK HYNIX INC.
- Jeong Hwan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILAMENT-METAL OXIDE CHANNEL EXCHANGE RESISTIVE MEMORY DEVICE
- Publication number 20220399497
- Publication date Dec 15, 2022
- International Business Machines Corporation
- Laura Bégon-Lours
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICES
- Publication number 20220310915
- Publication date Sep 29, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- DESMOND JIA JUN LOY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure and manufacturing method thereof
- Publication number 20220140239
- Publication date May 5, 2022
- UNITED MICROELECTRONICS CORP.
- Shih-Wei Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF MEMORY DEVICE
- Publication number 20220109104
- Publication date Apr 7, 2022
- United Microelectronics Corp.
- HAI TAO LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNING OXIDATION RESISTANT ELECTRODE IN CROSSBAR ARRAY CIRCUITS
- Publication number 20220045271
- Publication date Feb 10, 2022
- Tetramem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A CONTINUOUS THIN FILM OF A METAL CHALCOGENIDE
- Publication number 20210358533
- Publication date Nov 18, 2021
- National University of Singapore
- Kian Ping LOH
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210351235
- Publication date Nov 11, 2021
- Toshiba Memory Corporation
- Masahiro Kiyotoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-STOICHIOMETRIC METAL-OXIDE THIN FILMS
- Publication number 20210272796
- Publication date Sep 2, 2021
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME
- Publication number 20210175420
- Publication date Jun 10, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing Lv
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPED CONTACT STRUCTURE WITH VARIABLE ADHESION LAYER THICKNESS
- Publication number 20210151677
- Publication date May 20, 2021
- Macronix International Co., Ltd.
- Yu-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSSBAR ARRAY CIRCUIT WITH 3D VERTICAL RRAM
- Publication number 20210028230
- Publication date Jan 28, 2021
- Tetramem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-STOICHIOMETRIC METAL-OXIDE THIN FILMS
- Publication number 20210020427
- Publication date Jan 21, 2021
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20210013262
- Publication date Jan 14, 2021
- Hefei Reliance Memory Limited
- Christophe J. CHEVALLIER
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-RECTIFYING RESISTIVE MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20210013404
- Publication date Jan 14, 2021
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20200388759
- Publication date Dec 10, 2020
- United Microelectronics Corp.
- HAI TAO LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERNING OXIDATION RESISTANT ELECTRODE IN CROSSBAR ARRAY CIRCUITS
- Publication number 20200373486
- Publication date Nov 26, 2020
- Tetramem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA
- Publication number 20200335694
- Publication date Oct 22, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIVALENT OXIDE SPACERS FOR ANALOG SWITCHING RESISTIVE MEMORY
- Publication number 20200313088
- Publication date Oct 1, 2020
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND A METHOD FOR FORMING THE MEMORY DEVICE
- Publication number 20200176513
- Publication date Jun 4, 2020
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Lanxiang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTOR BASED ON TRANSITION METAL OXIDE AND PREPARATION METHOD THE...
- Publication number 20200058704
- Publication date Feb 20, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Hangbing LV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE
- Publication number 20200052207
- Publication date Feb 13, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELLS AND PRECURSORS THEREOF, METHODS OF MAKING TH...
- Publication number 20190348604
- Publication date Nov 14, 2019
- Intel Corporation
- NILOY MUKHERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING AND OPERATING MEMORY DEVICES THAT UTILIZE CORRELATED ELECTR...
- Publication number 20190334086
- Publication date Oct 31, 2019
- ARM Limited
- Glen Arnold Rosendale
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20190305047
- Publication date Oct 3, 2019
- Hefei Reliance Memory Limited
- Christophe J. CHEVALLIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATION OF A CEM DEVICE
- Publication number 20190296231
- Publication date Sep 26, 2019
- ARM Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANU...
- Publication number 20190288035
- Publication date Sep 19, 2019
- Toshiba Memory Corporation
- Tsubasa IMAMURA
- H01 - BASIC ELECTRIC ELEMENTS

by conversion of electrode material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Sub-stoichiometric metal-oxide thin films

Self-rectifying resistive memory and fabrication method thereof

Capped contact structure with variable adhesion layer thickness

Correlated electron device formed via conversion of conductive subs...

Memory element with a reactive metal layer

Additively manufactured resistive switch

Resistance random access memory and method for fabricating the same

Structure of memory device and fabrication method thereof

Patterning oxidation resistant electrode in crossbar array circuits

Resistive switching memory with replacement metal electrode

Multivalent oxide spacers for analog switching resistive memory

Semiconductor memory and method of manufacturing the same

Sub-stoichiometric metal-oxide thin films

Switching device formed from correlated electron material

Memory device and a method for forming the memory device

Resistive memory cells and precursors thereof, methods of making th...

Memory element with a reactive metal layer

Tungsten oxide RRAM with barrier free structure

Memory element with a reactive metal layer

Resistive switching memory with replacement metal electrode

Method of manufacturing semiconductor device and semiconductor manu...

Semiconductor memory device having a phase change material

RRAM cell structure with laterally offset BEVA/TEVA

Forming and operating memory devices that utilize correlated electr...

Selection device for use in bipolar resistive memory and manufactur...

RRAM devices and their methods of fabrication

Electronic device including semiconductor memory having different d...

Method for fabrication of a CEM device

Method for manufacturing a resistive random access memory; having r...

Resistive memory device containing oxygen-modulated hafnium oxide m...

Patents Applicationslast 30 patents

MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE RESISTIVE M...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FILAMENT-METAL OXIDE CHANNEL EXCHANGE RESISTIVE MEMORY DEVICE

RESISTIVE RANDOM ACCESS MEMORY DEVICES

Semiconductor structure and manufacturing method thereof

FABRICATION METHOD OF MEMORY DEVICE

PATTERNING OXIDATION RESISTANT ELECTRODE IN CROSSBAR ARRAY CIRCUITS

A CONTINUOUS THIN FILM OF A METAL CHALCOGENIDE

SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME

SUB-STOICHIOMETRIC METAL-OXIDE THIN FILMS

RESISTANCE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME

CAPPED CONTACT STRUCTURE WITH VARIABLE ADHESION LAYER THICKNESS

CROSSBAR ARRAY CIRCUIT WITH 3D VERTICAL RRAM

SUB-STOICHIOMETRIC METAL-OXIDE THIN FILMS

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

SELF-RECTIFYING RESISTIVE MEMORY AND FABRICATION METHOD THEREOF

STRUCTURE OF MEMORY DEVICE AND FABRICATION METHOD THEREOF

PATTERNING OXIDATION RESISTANT ELECTRODE IN CROSSBAR ARRAY CIRCUITS

RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA

MULTIVALENT OXIDE SPACERS FOR ANALOG SWITCHING RESISTIVE MEMORY

MEMORY DEVICE AND A METHOD FOR FORMING THE MEMORY DEVICE

SELECTOR BASED ON TRANSITION METAL OXIDE AND PREPARATION METHOD THE...

RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE

RESISTIVE MEMORY CELLS AND PRECURSORS THEREOF, METHODS OF MAKING TH...

FORMING AND OPERATING MEMORY DEVICES THAT UTILIZE CORRELATED ELECTR...

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

METHOD FOR FABRICATION OF A CEM DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANU...