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H01L45/1658

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1658by diffusion

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Resistive random-access memory cell and manufacturing method thereof
- Patent number 11,637,238
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Correlated electron device formed via conversion of conductive subs...
- Patent number 11,522,133
- Issue date Dec 6, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 11,502,249
- Issue date Nov 15, 2022
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a correlated electron material (CEM)
- Patent number 11,258,010
- Issue date Feb 22, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory structure and manufacturing method t...
- Patent number 11,258,011
- Issue date Feb 22, 2022
- Winbond Electronics Corp.
- Bo-Lun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching atomic transistor and method for operating same
- Patent number 11,258,009
- Issue date Feb 22, 2022
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Artificial neural networks (ANN) including a resistive element base...
- Patent number 11,227,996
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Scaled nanotube electrode for low power multistage atomic switch
- Patent number 11,201,283
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog nonvolatile memory cells using dopant activation
- Patent number 11,145,380
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Structure and method to fabricate resistive memory with vertical pr...
- Patent number 11,094,883
- Issue date Aug 17, 2021
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including liners, and related systems
- Patent number 11,038,107
- Issue date Jun 15, 2021
- Micron Technology, Inc.
- Dale W. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating artificial neural networks (ANN) based on d...
- Patent number 11,024,803
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Symmetric bipolar switching in memristors for artificial intelligen...
- Patent number 10,930,343
- Issue date Feb 23, 2021
- Hewlett Packard Enterprise Development LP
- Amit S. Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching atomic transistor and method for operating same
- Patent number 10,923,656
- Issue date Feb 16, 2021
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Correlated electron material devices using dopant species diffused...
- Patent number 10,854,814
- Issue date Dec 1, 2020
- ARM Limited
- Kimberly Gay Reid
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 10,833,125
- Issue date Nov 10, 2020
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 10,797,106
- Issue date Oct 6, 2020
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive switching memory cell including switchable solid electrol...
- Patent number 10,777,744
- Issue date Sep 15, 2020
- Heraeus Deutschland GmbH & Co. KG
- Christian Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled nanotube electrode for low power multistage atomic switch
- Patent number 10,777,741
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with laterally offset BEVA/TEVA
- Patent number 10,700,275
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall insulated resistive memory devices
- Patent number 10,644,066
- Issue date May 5, 2020
- Western Digital Technologies, Inc.
- Daniel Bedau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant-driven phase transitions in correlated metal oxides
- Patent number 10,600,959
- Issue date Mar 24, 2020
- President and Fellows of Harvard College
- Jian Shi
- G11 - INFORMATION STORAGE
Information Patent Grant
CEM switching device
- Patent number 10,586,924
- Issue date Mar 10, 2020
- ARM Ltd.
- Kimberly Gay Reid
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices
- Patent number 10,566,530
- Issue date Feb 18, 2020
- Samsung Electronics Co., Ltd.
- Changyup Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled nanotube electrode for low power multistage atomic switch
- Patent number 10,468,593
- Issue date Nov 5, 2019
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling dopant concentration in correlated electron materials
- Patent number 10,454,026
- Issue date Oct 22, 2019
- ARM Ltd.
- Lucian Shifren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory with protected switching layer
- Patent number 10,381,557
- Issue date Aug 13, 2019
- Shih-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random accress memory containing a conformal titanium alu...
- Patent number 10,361,366
- Issue date Jul 23, 2019
- Tokyo Electron Limited
- Takahiro Hakamata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 10,340,312
- Issue date Jul 2, 2019
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structures including liners and related methods
- Patent number 10,256,406
- Issue date Apr 9, 2019
- Micron Technology, Inc.
- Dale W. Collins
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PHASE CHANGE MEMORY WITH HEATER
- Publication number 20230074555
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC SYNAPSE DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220406998
- Publication date Dec 22, 2022
- Agency for Science, Technology and Research
- Wen Dong Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF
- Publication number 20220254996
- Publication date Aug 11, 2022
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND...
- Publication number 20220123208
- Publication date Apr 21, 2022
- Research & Business Foundation Sungkyunkwan University
- Woojong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION
- Publication number 20210343358
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURE AND METHOD TO FABRICATE RESISTIVE MEMORY WITH VERTICAL PR...
- Publication number 20210343938
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME
- Publication number 20210104667
- Publication date Apr 8, 2021
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20210013262
- Publication date Jan 14, 2021
- Hefei Reliance Memory Limited
- Christophe J. CHEVALLIER
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND MANUFACTURING METHOD T...
- Publication number 20210005812
- Publication date Jan 7, 2021
- WINBOND ELECTRONICS CORP.
- Bo-Lun WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA
- Publication number 20200335694
- Publication date Oct 22, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING CELL-TO-CELL SWITCH VARIATION IN CROSSBAR ARRAY CIRCUITS
- Publication number 20200312911
- Publication date Oct 1, 2020
- Tetramem Inc.
- Ning Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED NANOTUBE ELECTRODE FOR LOW POWER MULTISTAGE ATOMIC SWITCH
- Publication number 20200136034
- Publication date Apr 30, 2020
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED NANOTUBE ELECTRODE FOR LOW POWER MULTISTAGE ATOMIC SWITCH
- Publication number 20200066979
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC BIPOLAR SWITCHING IN MEMRISTORS FOR ARTIFICIAL INTELLIGEN...
- Publication number 20200066340
- Publication date Feb 27, 2020
- HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Amit S. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING DOPANT CONCENTRATION IN CORRELATED ELECTRON MATERIALS
- Publication number 20200052201
- Publication date Feb 13, 2020
- ARM Limited
- Lucian Shifren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY CELL
- Publication number 20190341548
- Publication date Nov 7, 2019
- Heraeus Deutschland GmbH & Co. KG
- Christian NEUMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED NANOTUBE ELECTRODE FOR LOW POWER MULTISTAGE ATOMIC SWITCH
- Publication number 20190319184
- Publication date Oct 17, 2019
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20190305047
- Publication date Oct 3, 2019
- Hefei Reliance Memory Limited
- Christophe J. CHEVALLIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20190288204
- Publication date Sep 19, 2019
- Samsung Electronics Co., Ltd.
- Changyup PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORRELATED ELECTRON DEVICE FORMED VIA CONVERSION OF CONDUCTIVE SUBS...
- Publication number 20190198758
- Publication date Jun 27, 2019
- ARM Limited
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME
- Publication number 20190198759
- Publication date Jun 27, 2019
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA
- Publication number 20190123271
- Publication date Apr 25, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING LINERS, AND RELATED SYSTEMS
- Publication number 20190097133
- Publication date Mar 28, 2019
- Micron Technology, Inc.
- Dale W. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORRELATED ELECTRON MATERIAL DEVICES USING DOPANT SPECIES DIFFUSED...
- Publication number 20190088876
- Publication date Mar 21, 2019
- ARM, Ltd.
- Kimberly Gay Reid
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCRESS MEMORY CONTAINING A CONFORMAL TITANIUM ALU...
- Publication number 20190044064
- Publication date Feb 7, 2019
- TOKYO ELECTRON LIMITED
- Takahiro Hakamata
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY WITH PROTECTED SWITCHING LAYER
- Publication number 20180375021
- Publication date Dec 27, 2018
- Shih-Yuan WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL INSULATED RESISTIVE MEMORY DEVICES
- Publication number 20180301507
- Publication date Oct 18, 2018
- Western Digital Technologies, Inc.
- Daniel Bedau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORRELATED ELECTRON DEVICE FORMED VIA CONVERSION OF CONDUCTIVE SUBS...
- Publication number 20180159029
- Publication date Jun 7, 2018
- ARM Ltd.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20180122857
- Publication date May 3, 2018
- UNITY SEMICONDUCTOR CORPORATION
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING LINERS AND RELATED METHODS
- Publication number 20170331036
- Publication date Nov 16, 2017
- Micron Technology, Inc.
- Dale W. Collins
- H01 - BASIC ELECTRIC ELEMENTS

by diffusion

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Resistive random-access memory cell and manufacturing method thereof

Correlated electron device formed via conversion of conductive subs...

Memory element with a reactive metal layer

Formation of a correlated electron material (CEM)

Resistive random access memory structure and manufacturing method t...

Switching atomic transistor and method for operating same

Artificial neural networks (ANN) including a resistive element base...

Scaled nanotube electrode for low power multistage atomic switch

Analog nonvolatile memory cells using dopant activation

Structure and method to fabricate resistive memory with vertical pr...

Semiconductor devices including liners, and related systems

Methods for fabricating artificial neural networks (ANN) based on d...

Symmetric bipolar switching in memristors for artificial intelligen...

Switching atomic transistor and method for operating same

Correlated electron material devices using dopant species diffused...

Memory element with a reactive metal layer

Memory element with a reactive metal layer

Resistive switching memory cell including switchable solid electrol...

Scaled nanotube electrode for low power multistage atomic switch

RRAM cell structure with laterally offset BEVA/TEVA

Sidewall insulated resistive memory devices

Dopant-driven phase transitions in correlated metal oxides

CEM switching device

Method of fabricating semiconductor devices

Scaled nanotube electrode for low power multistage atomic switch

Controlling dopant concentration in correlated electron materials

Resistive random-access memory with protected switching layer

Resistive random accress memory containing a conformal titanium alu...

Memory element with a reactive metal layer

Semiconductor structures including liners and related methods

Patents Applicationslast 30 patents

PHASE CHANGE MEMORY WITH HEATER

ELECTRONIC SYNAPSE DEVICE AND METHOD OF FORMING THE SAME

RESISTIVE RANDOM-ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF

MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND...

ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION

STRUCTURE AND METHOD TO FABRICATE RESISTIVE MEMORY WITH VERTICAL PR...

SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND MANUFACTURING METHOD T...

RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA

REDUCING CELL-TO-CELL SWITCH VARIATION IN CROSSBAR ARRAY CIRCUITS

SCALED NANOTUBE ELECTRODE FOR LOW POWER MULTISTAGE ATOMIC SWITCH

SCALED NANOTUBE ELECTRODE FOR LOW POWER MULTISTAGE ATOMIC SWITCH

SYMMETRIC BIPOLAR SWITCHING IN MEMRISTORS FOR ARTIFICIAL INTELLIGEN...

CONTROLLING DOPANT CONCENTRATION IN CORRELATED ELECTRON MATERIALS

RESISTIVE SWITCHING MEMORY CELL

SCALED NANOTUBE ELECTRODE FOR LOW POWER MULTISTAGE ATOMIC SWITCH

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

METHOD OF FABRICATING SEMICONDUCTOR DEVICES

CORRELATED ELECTRON DEVICE FORMED VIA CONVERSION OF CONDUCTIVE SUBS...

SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME

RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA

SEMICONDUCTOR DEVICES INCLUDING LINERS, AND RELATED SYSTEMS

CORRELATED ELECTRON MATERIAL DEVICES USING DOPANT SPECIES DIFFUSED...

RESISTIVE RANDOM ACCRESS MEMORY CONTAINING A CONFORMAL TITANIUM ALU...

RESISTIVE RANDOM-ACCESS MEMORY WITH PROTECTED SWITCHING LAYER

SIDEWALL INSULATED RESISTIVE MEMORY DEVICES

CORRELATED ELECTRON DEVICE FORMED VIA CONVERSION OF CONDUCTIVE SUBS...

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

SEMICONDUCTOR STRUCTURES INCLUDING LINERS AND RELATED METHODS