by etching of pre-deposited switching material layers

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H01L45/1675

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1675by etching of pre-deposited switching material layers

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Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Step height mitigation in resistive random access memory structures
- Patent number 11,678,592
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned pattern formation post spacer etchback in tight pitch...
- Patent number 11,670,510
- Issue date Jun 6, 2023
- TESSERA LLC
- Sean D. Burns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,672,130
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jonguk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,665,912
- Issue date May 30, 2023
- SK hynix Inc.
- Tae Jung Ha
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Selector device and method of making the same
- Patent number 11,659,781
- Issue date May 23, 2023
- Huazhong University of Science & Technology
- Xiangshui Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices
- Patent number 11,651,995
- Issue date May 16, 2023
- Samsung Electronics Co., Ltd.
- Sangkuk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield RRAM cell with optimized film scheme
- Patent number 11,637,239
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for resistive RAM (ReRAM) performance stabilization via dry...
- Patent number 11,637,242
- Issue date Apr 25, 2023
- Tokyo Electron Limited
- Sergey Voronin
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random-access memory cell and manufacturing method thereof
- Patent number 11,637,238
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,637,146
- Issue date Apr 25, 2023
- SK Hynix Inc.
- Hwang-Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming resistive memory cell having an ovonic threshold...
- Patent number 11,637,144
- Issue date Apr 25, 2023
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 11,631,812
- Issue date Apr 18, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efficient fabrication of memory structures
- Patent number 11,626,452
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Don Koun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,621,298
- Issue date Apr 4, 2023
- SK hynix Inc.
- Sung Kil Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory arrays, and methods of forming the same
- Patent number 11,616,098
- Issue date Mar 28, 2023
- Micron Technology, Inc.
- Lingming Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell, method of forming the same, and semiconductor die
- Patent number 11,605,779
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double selector element for low voltage bipolar memory devices
- Patent number 11,605,671
- Issue date Mar 14, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory and methods for fabrication of same
- Patent number 11,600,665
- Issue date Mar 7, 2023
- Micron Technology, Inc.
- Marcello Ravasio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a FinFET device
- Patent number 11,594,680
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chang-Miao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer in programmable metallization cell
- Patent number 11,594,678
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure improving reliability of top electrode contact for resist...
- Patent number 11,594,679
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Tai Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to effectively suppress heat dissipation in PCRAM devices
- Patent number 11,588,106
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory with vertical transport transistor
- Patent number 11,588,104
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,588,107
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,587,977
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Dong-Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,581,367
- Issue date Feb 14, 2023
- Samsung Electronics Co., Ltd.
- Dongho Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,575,019
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE
- Publication number 20240188455
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL RERAM DEVICE
- Publication number 20240179924
- Publication date May 30, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING
- Publication number 20240147874
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THINNED PHASE CHANGE MATERIAL IN BRIDGE CELL MEMORY AS A WEIGHT FOR...
- Publication number 20240147876
- Publication date May 2, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH HEATER
- Publication number 20240130256
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
- Publication number 20240114807
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...
- Publication number 20240114813
- Publication date Apr 4, 2024
- TetraMem Inc.
- Mingche Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Boron Surface Passivation of Phase Change Memory Material
- Publication number 20240099166
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...
- Publication number 20240099163
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS
- Publication number 20240090350
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20240081158
- Publication date Mar 7, 2024
- UNITED MICROELECTRONICS CORP.
- Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074334
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM
- Publication number 20240074336
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE MEMORY DEVICE
- Publication number 20240065119
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20240057487
- Publication date Feb 15, 2024
- UNITED MICROELECTRONICS CORP.
- Kai-Jiun Chang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE HAVING THE MEMORY DEVICE
- Publication number 20240049477
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH HIGH WORK FUNCTION CAP
- Publication number 20240040940
- Publication date Feb 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240040938
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...
- Publication number 20240016072
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ULTRA-THIN PCM CELL
- Publication number 20240008374
- Publication date Jan 4, 2024
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240008375
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...
- Publication number 20230422643
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230422642
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230413699
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Hye Jung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230413691
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATION METHOD THE...
- Publication number 20230413698
- Publication date Dec 21, 2023
- UNITED MICROELECTRONICS CORP.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...
- Publication number 20230403956
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin I WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL CONFINEMENT AND...
- Publication number 20230403954
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20230397514
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS

by etching of pre-deposited switching material layers

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Step height mitigation in resistive random access memory structures

Self aligned pattern formation post spacer etchback in tight pitch...

Semiconductor device and method of forming the same

Electronic device and method for fabricating the same

Selector device and method of making the same

Memory devices

High yield RRAM cell with optimized film scheme

Methods for resistive RAM (ReRAM) performance stabilization via dry...

Resistive random-access memory cell and manufacturing method thereof

Electronic device and method for fabricating the same

Method of forming resistive memory cell having an ovonic threshold...

Electronic device

Efficient fabrication of memory structures

Stackable symmetrical operation memory bit cell structure with bidi...

Electronic device and method for fabricating the same

Three-dimensional memory arrays, and methods of forming the same

Resistive random access memory device

Memory cell, method of forming the same, and semiconductor die

Double selector element for low voltage bipolar memory devices

Cross-point memory and methods for fabrication of same

Method of forming a FinFET device

Diffusion barrier layer in programmable metallization cell

Structure improving reliability of top electrode contact for resist...

Method to effectively suppress heat dissipation in PCRAM devices

Resistive memory with vertical transport transistor

Integrated circuit structure

Memory device and method of manufacturing the same

Semiconductor device

Semiconductor device

Patents Applicationslast 30 patents

PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE

THREE DIMENSIONAL RERAM DEVICE

PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING

THINNED PHASE CHANGE MATERIAL IN BRIDGE CELL MEMORY AS A WEIGHT FOR...

PHASE CHANGE MEMORY CELL WITH HEATER

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

Boron Surface Passivation of Phase Change Memory Material

Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...

MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

RRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

SELF-ALIGNED PATTERNED PROJECTION LINER FOR SIDEWALL ELECTRODE PCM

VERTICAL PHASE CHANGE MEMORY DEVICE

RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME

MEMORY DEVICE AND SEMICONDUCTOR DIE HAVING THE MEMORY DEVICE

RRAM WITH HIGH WORK FUNCTION CAP

MEMORY DEVICE AND FABRICATION METHOD THEREOF

MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...

VERTICAL ULTRA-THIN PCM CELL

MEMORY DEVICE AND FABRICATION METHOD THEREOF

RADIO FREQUENCY SWITCH FOR MULTI-BAND FILTER APPLICATIONS AND METHO...

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATION METHOD THE...

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...

PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL CONFINEMENT AND...

TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL