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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/165by implantation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Resistive random-access memory cell and manufacturing method thereof
- Patent number 11,637,238
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device comprising silicon oxide layer and conductor sharing...
- Patent number 11,557,725
- Issue date Jan 17, 2023
- Kioxia Corporation
- Yoshinori Kumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array with graded memory stack resistances
- Patent number 11,538,860
- Issue date Dec 27, 2022
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Correlated electron device formed via conversion of conductive subs...
- Patent number 11,522,133
- Issue date Dec 6, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 11,502,249
- Issue date Nov 15, 2022
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching memory cell
- Patent number 11,456,416
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive memory cell with switching layer comprising one or more d...
- Patent number 11,430,951
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection devices using carbon-based diodes
- Patent number 11,387,277
- Issue date Jul 12, 2022
- Nantero, Inc.
- Claude L. Bertin
- G11 - INFORMATION STORAGE
Information Patent Grant
High thermal stability SiOx doped GeSbTe materials suitable for emb...
- Patent number 11,362,276
- Issue date Jun 14, 2022
- Macronix International Co., Ltd.
- Huai-Yu Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layered conductive metal oxide structures and methods for fac...
- Patent number 11,289,542
- Issue date Mar 29, 2022
- Hefei Reliance Memory Limited
- Jian Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,271,156
- Issue date Mar 8, 2022
- SK Hynix Inc.
- Hyung Suk Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a correlated electron material (CEM)
- Patent number 11,258,010
- Issue date Feb 22, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory structure and manufacturing method t...
- Patent number 11,258,011
- Issue date Feb 22, 2022
- Winbond Electronics Corp.
- Bo-Lun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching atomic transistor and method for operating same
- Patent number 11,258,009
- Issue date Feb 22, 2022
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Artificial neural networks (ANN) including a resistive element base...
- Patent number 11,227,996
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Conductive bridge semiconductor component and manufacturing method...
- Patent number 11,223,013
- Issue date Jan 11, 2022
- Institute of Microelectronics, Chinese Academy of Sciences
- Qi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled nanotube electrode for low power multistage atomic switch
- Patent number 11,201,283
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Qing Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-based resistive non-volatile memory cell and method for manuf...
- Patent number 11,189,792
- Issue date Nov 30, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Laurent Grenouillet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming resistive random access memory cell
- Patent number 11,189,793
- Issue date Nov 30, 2021
- United Microelectronics Corp.
- Shih-Wei Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog nonvolatile memory cells using dopant activation
- Patent number 11,145,380
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Structure and method to fabricate resistive memory with vertical pr...
- Patent number 11,094,883
- Issue date Aug 17, 2021
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including liners, and related systems
- Patent number 11,038,107
- Issue date Jun 15, 2021
- Micron Technology, Inc.
- Dale W. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered conductive metal oxide structures and methods for fac...
- Patent number 11,037,987
- Issue date Jun 15, 2021
- Hefei Reliance Memory Limited
- Jian Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating artificial neural networks (ANN) based on d...
- Patent number 11,024,803
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for manufacturing a resistive memory
- Patent number 11,005,041
- Issue date May 11, 2021
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Christelle Charpin-Nicolle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric bipolar switching in memristors for artificial intelligen...
- Patent number 10,930,343
- Issue date Feb 23, 2021
- Hewlett Packard Enterprise Development LP
- Amit S. Sharma
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching atomic transistor and method for operating same
- Patent number 10,923,656
- Issue date Feb 16, 2021
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory with gradual resistance change
- Patent number 10,923,653
- Issue date Feb 16, 2021
- Samsung Electronics Co., Ltd.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array with graded memory stack resistances
- Patent number 10,910,438
- Issue date Feb 2, 2021
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Correlated electron material devices using dopant species diffused...
- Patent number 10,854,814
- Issue date Dec 1, 2020
- ARM Limited
- Kimberly Gay Reid
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SWITCHING ELEMENT AND MEMORY DEVICE
- Publication number 20230301205
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Taichi IGARASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE
- Publication number 20230292637
- Publication date Sep 14, 2023
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20230135098
- Publication date May 4, 2023
- United Microelectronics Corp.
- Yi Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE
- Publication number 20230108500
- Publication date Apr 6, 2023
- KIOXIA Corporation
- Yoshinori KUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MEMORY RESISTOR DEVICE
- Publication number 20230092998
- Publication date Mar 23, 2023
- UCL Business LTD
- Longfei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH HEATER
- Publication number 20230074555
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH GRAIN GROWTH ENHANCEMENT
- Publication number 20230051017
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC SYNAPSE DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20220406998
- Publication date Dec 22, 2022
- Agency for Science, Technology and Research
- Wen Dong Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...
- Publication number 20220336739
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF
- Publication number 20220254996
- Publication date Aug 11, 2022
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FAC...
- Publication number 20220190036
- Publication date Jun 16, 2022
- Hefei Reliance Memory Limited
- Jian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY CELL
- Publication number 20220158092
- Publication date May 19, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FILL-IN CONFINED CELL PCM DEVICES
- Publication number 20220140237
- Publication date May 5, 2022
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND...
- Publication number 20220123208
- Publication date Apr 21, 2022
- Research & Business Foundation Sungkyunkwan University
- Woojong YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20210376236
- Publication date Dec 2, 2021
- KIOXIA Corporation
- Bairu YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION
- Publication number 20210343358
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Heng Wu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURE AND METHOD TO FABRICATE RESISTIVE MEMORY WITH VERTICAL PR...
- Publication number 20210343938
- Publication date Nov 4, 2021
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...
- Publication number 20210336135
- Publication date Oct 28, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH THERMAL STABILITY SiOX DOPED GeSbTe MATERIALS SUITABLE FOR EMB...
- Publication number 20210305507
- Publication date Sep 30, 2021
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE
- Publication number 20210288253
- Publication date Sep 16, 2021
- KIOXIA Corporation
- Yoshinori KUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY WITH GRADED MEMORY STACK RESISTANCES
- Publication number 20210111226
- Publication date Apr 15, 2021
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME
- Publication number 20210104667
- Publication date Apr 8, 2021
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FAC...
- Publication number 20210098534
- Publication date Apr 1, 2021
- Hefei Reliance Memory Limited
- Jian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20210074917
- Publication date Mar 11, 2021
- UNITED MICROELECTRONICS CORP.
- Shih-Wei Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT-MODULATED ETCHING FOR MEMORY DEVICES
- Publication number 20210043838
- Publication date Feb 11, 2021
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20210013262
- Publication date Jan 14, 2021
- Hefei Reliance Memory Limited
- Christophe J. CHEVALLIER
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND MANUFACTURING METHOD T...
- Publication number 20210005812
- Publication date Jan 7, 2021
- WINBOND ELECTRONICS CORP.
- Bo-Lun WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic Discharge Protection Devices Using Carbon-Based Diodes
- Publication number 20200403036
- Publication date Dec 24, 2020
- Nantero, Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY WITH GRADED MEMORY STACK RESISTANCES
- Publication number 20200350371
- Publication date Nov 5, 2020
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA
- Publication number 20200335694
- Publication date Oct 22, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS

by implantation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Resistive random-access memory cell and manufacturing method thereof

Memory device comprising silicon oxide layer and conductor sharing...

Memory array with graded memory stack resistances

Correlated electron device formed via conversion of conductive subs...

Memory element with a reactive metal layer

Resistive switching memory cell

Resistive memory cell with switching layer comprising one or more d...

Electrostatic discharge protection devices using carbon-based diodes

High thermal stability SiOx doped GeSbTe materials suitable for emb...

Multi-layered conductive metal oxide structures and methods for fac...

Electronic device and method for fabricating the same

Formation of a correlated electron material (CEM)

Resistive random access memory structure and manufacturing method t...

Switching atomic transistor and method for operating same

Artificial neural networks (ANN) including a resistive element base...

Conductive bridge semiconductor component and manufacturing method...

Scaled nanotube electrode for low power multistage atomic switch

Oxide-based resistive non-volatile memory cell and method for manuf...

Method of forming resistive random access memory cell

Analog nonvolatile memory cells using dopant activation

Structure and method to fabricate resistive memory with vertical pr...

Semiconductor devices including liners, and related systems

Multi-layered conductive metal oxide structures and methods for fac...

Methods for fabricating artificial neural networks (ANN) based on d...

Method for manufacturing a resistive memory

Symmetric bipolar switching in memristors for artificial intelligen...

Switching atomic transistor and method for operating same

Phase change memory with gradual resistance change

Memory array with graded memory stack resistances

Correlated electron material devices using dopant species diffused...

Patents Applicationslast 30 patents

SWITCHING ELEMENT AND MEMORY DEVICE

PHASE-CHANGE MEMORY CELL WITH REDUCED HEATER SIZE

RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE

METHOD FOR MANUFACTURING A MEMORY RESISTOR DEVICE

PHASE CHANGE MEMORY WITH HEATER

BACK END OF LINE EMBEDDED RRAM STRUCTURE WITH GRAIN GROWTH ENHANCEMENT

ELECTRONIC SYNAPSE DEVICE AND METHOD OF FORMING THE SAME

RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...

RESISTIVE RANDOM-ACCESS MEMORY CELL AND MANUFACTURING METHOD THEREOF

MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FAC...

RESISTIVE SWITCHING MEMORY CELL

FILL-IN CONFINED CELL PCM DEVICES

MEMRISTOR HAVING METAL/ION CHANNELS FORMED IN INSULATING LAYER AND...

MEMORY DEVICE

ANALOG NONVOLATILE MEMORY CELLS USING DOPANT ACTIVATION

STRUCTURE AND METHOD TO FABRICATE RESISTIVE MEMORY WITH VERTICAL PR...

RESISTIVE MEMORY CELL WITH SWITCHING LAYER COMPRISING ONE OR MORE D...

HIGH THERMAL STABILITY SiOX DOPED GeSbTe MATERIALS SUITABLE FOR EMB...

MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE

MEMORY ARRAY WITH GRADED MEMORY STACK RESISTANCES

SWITCHING ATOMIC TRANSISTOR AND METHOD FOR OPERATING SAME

MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FAC...

METHOD OF FORMING RESISTIVE RANDOM ACCESS MEMORY CELL

DOPANT-MODULATED ETCHING FOR MEMORY DEVICES

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND MANUFACTURING METHOD T...

Electrostatic Discharge Protection Devices Using Carbon-Based Diodes

MEMORY ARRAY WITH GRADED MEMORY STACK RESISTANCES

RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA