Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to enhance cycling endurance, as well as the memory effect, of memory elements, such as implemented in third dimensional memory technology.
Conventional memory architectures and technologies, such as those including dynamic random access memory (“DRAM”) cells and Flash memory cells, typically are not well-suited to resolve issues of manufacturing and operating resistance change-based memory cells. The above-described memory architectures, while functional for their specific technologies, fall short of being able to adequately address the issues of cycling endurance of resistance-based memory elements and the degradation due to repeated program-erase cycles. As the structures of conventional memory cells differ from resistance-based memory elements, there are different requirements and approaches to improve the reliability (e.g., cycling endurance) of two-terminal resistance-based memory elements.
In certain conventional approaches to forming resistance-based memory elements, materials providing mobile ions have been formed on multiple layers to form a reservoir of ions used in transport to another material for modifying the resistance of the memory cell. Typically, the multiple layers are formed with identical materials and compositions and cooperate to operate as an ionic conductor and an electronic insulator. While functional, there are certain performance deficiencies associated with this structure.
It would be desirable to provide improved systems, integrated circuits, and methods that minimize one or more of the drawbacks associated with conventional techniques for facilitating improved cycling endurance and memory effects for two-terminal resistance-based memory elements disposed in, for example, cross-point arrays or other memory structures suitable for two-terminal resistance-based memory elements.
The invention and its various embodiments are more fully appreciated in connection with the following detailed description taken in conjunction with the accompanying drawings, in which:
Although the above-described drawings depict various examples of the invention, the invention is not limited by the depicted examples. It is to be understood that, in the drawings, like reference numerals designate like structural elements. Also, it is understood that the drawings are not necessarily to scale.
Various embodiments or examples may be implemented in numerous ways, including as a system, a process, an apparatus, or a series of program instructions on a computer readable medium such as a computer readable storage medium or a computer network where the program instructions are sent over optical, electronic, or wireless communication links. In general, operations of disclosed processes may be performed in an arbitrary order, unless otherwise provided in the claims.
A detailed description of one or more examples is provided below along with accompanying figures. The detailed description is provided in connection with such examples, but is not limited to any particular example. The scope is limited only by the claims, and numerous alternatives, modifications, and equivalents are encompassed. Numerous specific details are set forth in the following description in order to provide a thorough understanding. These details are provided as examples and the described techniques may be practiced according to the claims without some or all of the accompanying details. For clarity, technical material that is known in the technical fields related to the examples has not been described in detail to avoid unnecessarily obscuring the description.
In some examples, techniques such as those described herein enable emulation of multiple memory types for implementation on a single component such as a wafer, substrate, or die. U.S. patent application Ser. No. 11/095,026, filed Mar. 30, 2005, published as U.S. publication no. 2006/0171200, and entitled “Memory Using Mixed Valence Conductive Oxides,” already incorporated by reference herein, describes non-volatile third dimensional memory elements that may be arranged in a two-terminal, cross-point memory array. New memory structures are possible with the capability of this third dimensional memory array. The technology allows for the emulation of other memory technologies by duplicating the interface signals and protocols, while accessing the third dimensional memory array. The third dimensional memory array may emulate other types of memory (e.g., emulation of DRAM, SRAM, ROM, EEPROM, FLASH, NAND FLASH, and NOR FLASH), providing memory combinations within a single component.
Semiconductor memories and memory material may be fabricated using the described techniques to create a single-layer or multiple-layer three-terminal memory and a single-layer or multiple-layer two-terminal memory, such as a cross-point memory described in U.S. patent application Ser. No. 11/095,026 (incorporated above). Using materials including but not limited to silicon oxide (SiO2), platinum (Pt), titanium nitride (TiN), yttria-stabilized zirconia (YSZ), tungsten (W), conductive metal oxide (CMO), perovskites (e.g., PCMO), and others, a memory may be formed with at least one layer of continuous and memory material (e.g., unetched) sandwiched between two or more electrodes. As part of the formation of a memory cell, for example, a discrete bottom electrode of a memory cell may be formed by etching one or more layers of material. The etched layers may be filled with material and planarized. Above the bottom electrode, one or more layers of memory material may be deposited but not etched (i.e., continuous, unetched layers of memory material). Above the unetched layer(s) of memory material (e.g., the uppermost layer of continuous and unetched memory material), additional layers of material, including a material for a top electrode, and optionally a selection device (“SD”) such as a non-ohmic device (“NOD”), for example, may be deposited and etched to form an implantation mask that, when implanted using ion implantation techniques, creates an insulating layer of conductive metal oxide (“CMO”) (e.g., praseodymium calcium manganese oxide—PCMO) in regions of the CMO that are not covered by the implantation mask. The implantation mask may or may not include the NOD, that is, the NOD may be formed after the layers that comprise the implantation mask. The continuous and unetched layer(s) of CMO may include perovskite-based structures and materials (e.g., PCMO) that, when exposed to argon (Ar), xenon (Xe), titanium (Ti), zirconium (Zr), aluminum (Al), silicon (Si), oxygen (02), silicon and oxygen, or other types of ion implantation techniques and materials, creates regions of material that are electrically insulating and may be referred to as insulating metal oxide (“IMO”). Depending on the type of CMO material selected, its thickness, and processing conditions, the IMO regions can have an amorphous structure that is electrically insulating or a crystalline structure that is electrically insulating. The described techniques enables the formation of memories with small feature sizes and matrices of top and bottom electrodes that are electrically insulated from one another with a greater degree of fabrication reliability and decreased defect or degradation rates. The described fabrication techniques may be varied and are not limited to the examples provided.
In some embodiments, an IMO structure, such as an electrolytic tunnel barrier, and one or more mixed valence conductive oxide structures (e.g., one or more layers of a conductive oxide material) need not operate in a silicon substrate, and, therefore, can be fabricated above circuitry being used for other purposes. That is, the active circuitry portion can be fabricated front-end-of-the-line (“FEOL”) on a substrate (e.g., a Silicon (Si) wafer, Si die, or other semiconductor substrate) and one or more layers of two-terminal cross-point memory arrays that include the non-volatile memory elements can be fabricated back-end-of-the-line (“BEOL”) directly on top of the substrate and electrically coupled with the active circuitry in the FEOL layer using an inter-level interconnect structure, at least a portion of which, is also fabricated FEOL. Manufacturing process for forming FEOL circuitry on a semiconductor wafer followed by subsequent BEOL vertically memory fabrication above the FEOL circuitry is described in U.S. patent application Ser. No. 12/454,322, filed May 15, 2009, and titled “Device Fabrication”, already incorporated herein by reference. Further, a two-terminal memory element can be arranged as a cross-point such that one terminal is electrically coupled with an X-direction line (or an “X-line”) and the other terminal is electrically coupled with a Y-direction line (or a “Y-line”). A third dimensional memory can include multiple memory elements vertically stacked upon one another, sometimes sharing X-direction and Y-direction lines in a layer of memory, and sometimes having isolated lines. When a first write voltage, VW1, is applied across the memory element (e.g., by applying ½ VW1 to the X-direction line and ½ −VW1 to the Y-direction line), the memory element can switch to a low resistive state. When a second write voltage, VW2, is applied across the memory element (e.g., by applying ½ VW2 to the X-direction line and ½ −VW2 to the Y-direction line), the memory element can switch to a high resistive state. Memory elements using electrolytic tunnel barriers and mixed valence conductive oxides can have VW1 opposite in polarity from VW2.
Further, layer of CMO Type 2 Material 204 and a portion of layer of CMO Type 1 material 206 include an ion-implanted material. The ion-implanted material is disposed within the crystalline structures of the different compositions of layers 204 and 206 to form an ion obstruction barrier 210. Ion obstruction barrier 210 is configured to inhibit transport or diffusion of other mobile ions 203a and 203b (e.g., a cation or positively charged “+” ion) when a data operations voltage (e.g., a write voltage or a read voltage) is not being applied across electrodes 208 and 209, such that there is no electric field being generated that could cause transport of the other mobile ions 203a and 203b. Note, the other mobile ions 203a and 203b are not the mobile oxygen ions 207 and the mobile oxygen ions 207 are only transported 225 when a write voltage is applied across electrodes (208, 209) and electric field EW 227 is generated. Examples of other mobile ions 203a and 203b include metal ions and other like ions that can diffuse or otherwise transfer between IMO 202 and layers of CMO Type 2 204 and CMO Type 1 206. Note also, that mobile oxygen ions 207 are not transported 225 when a read voltage is applied across electrodes (208, 209). In some embodiments, memory element 205 constitutes a portion 201 of a two-terminal re-writeable non-volatile memory cell.
In view of the foregoing, the structures and/or functionalities of layers of CMO Type 2 204 and CMO Type 1 206 of different compositions can facilitate implementation of ion obstruction barrier 210 (and structures and/or functionalities thereof). In accordance with various embodiments, ion obstruction barrier 210 can provide for enhanced memory effect for re-writeable nonvolatile memory cells, enhanced cycling endurance over a number of write and erase cycles, and/or the stabilization of current magnitudes over the number of write and erase cycles. Examples of enhanced performance characteristics are depicted in
Further, ion obstruction barrier 210 and/or the layers of CMO Type 2 204 and CMO Type 1 206 cooperate to enhance the number of program and erase cycles to extend over a first number of cycles 320 and a second number of cycles 322. For example, first number of cycles 320 can represent 10,000 cycles (10K), whereas a memory cell including portion 200 of the memory cell depicted in
Returning back to
IMO material 202 can include a material to form a tunnel oxide-based structure or an electrolytic tunnel barrier. In various embodiments, the IMO 202 can include but is not limited to a material for implementing a tunnel barrier layer is also an electrolyte that is permeable to the mobile oxygen ions 207 at voltages for write operations. Suitable materials for IMO 202 include but are not limited to one or more of the following: high-k dielectric materials, rare earth oxides, rare earth metal oxides, yttria-stabilized zirconium (YSZ), zirconia (ZrOx), zirconium oxygen nitride (ZrOxNy), yttrium oxide (YOx), erbium oxide (ErOx), gadolinium oxide (GdOx), lanthanum aluminum oxide (LaAlOx), hafnium oxide (HfOx), aluminum oxide (AlOx), silicon oxide (SiOx), cerium oxide (CeOx), gadolinium doped cerium oxide (CeOx), titanium oxide (TiOx), tantalum oxide (TaOx), and equivalent materials. IMO material 202 can have a thickness of approximately 50 Angstroms or less. Actual IMO thickness will be application specific and can be a function of the material selected and voltage magnitudes chosen for data operations to memory cells (e.g., read voltages, write voltages, program and erase voltages) that facilitate electron tunneling.
CMO Type 1 material 206 and CMO Type 2 material 204 can include different compositions of conductive metal oxide (CMO) or other perovskite material that typically exhibits memory characteristics. CMOs can be formed from a variety of perovskite materials and may include a mixed valence conductive oxide having substantially mixed crystalline or polycrystalline perovskite structure. Perovskite materials, such as CMO, may include two or more metals being selected from a group of transition metals, alkaline earth metals and rare earth metals. Examples of other perovskite materials may include, but are not limited to, manganites, titanates (e.g., strontium titanate STO, reduced STO), zirconates (SZO:Cr, CNO:Cr, TaO:Cr), LSCO, and high Tc superconductors (e.g., YBCO). Other examples of perovskites include but are not limited to PrCaMnOx (PCMO), LaNiOx (LNO), SrRuOx (SRO), LaSrCrOx (LSCrO), LaCaMnOx (LCMO), LaSrCaMnOx (LSCMO), LaSrMnOx (LSMO), LaSrCoOx (LSCoO), and LaSrFeOx (LSFeO), where x is nominally 3 for perovskites (e.g., x≤3 for perovskites) or the one or more CMO layers can be a conductive binary metal oxide structure comprised of a conductive binary metal oxide having the form AXOY, where A represents a metal and O represents oxygen. The conductive binary oxide material may optionally be doped (e.g., with niobium Nb, fluorine F, and/or nitrogen N) to obtain the desired conductive properties for a CMO. Other suitable CMO materials are described in U.S. patent application Ser. No. 12/653,836, filed Dec. 18, 2009, and published as U.S. publication no. 2010/0157658, and titled “Conductive Metal Oxide Structures In Non-Volatile Re-Writable Memory Devices”, already incorporated herein by reference. Layers of CMO Type 1 material 206 and CMO Type 2 material 204 can include two or more layers of CMO materials, at least two of which comprise CMO material of different compositions. Regardless, a CMO layer adjacent to and in contact with IMO layer 202 is thinner than other CMO layers. For example, layer of CMO Type 2 material 204, which is adjacent layer of IMO 202, can be formed to have a thickness between about 10% and about 20% of the thickness of CMO Type 1 material 206, according to some embodiments.
According to various embodiments, memory element 205 is a resistive memory element configured to maintain a resistive state representative of a data stored therein. Stored data is retained in the absence of electrical power (i.e., is non-volatile). As used herein, the term “discrete memory element” can refer, at least in some examples, to a memory cell having a structure that includes no more than memory element 205, and electrodes 208 and 209. For example, a discrete memory element can be a gateless two-terminal device. Examples of a non-discrete memory cell and/or memory element include but are not limited to one or more transistors or diodes configured to implement a selection device (SD) such as a non-ohmic device (NOD) or the like. Typical variations include 1T1R, 2T1R, 1D1R, and 2D1R devices where one (1T) or two (2T) transistors or one (1D) or two (2D) diodes are included in the memory cell and electrically coupled with the memory element.
Memory element 205 can as a discrete memory element constitute a memory cell, according to at least some embodiments. In some examples, a programmed state is a high resistance state (e.g., a logic “0”), and an erased state is a low resistance state (e.g., a logic “1”), thereby establishing a magnitude of an access current that is relatively lower for the programmed state and is relatively higher for the erased state. When only two resistive states are stored, the memory cell can be referred to as a single level cell (SLC). A range of resistive states (e.g., two-bits as “00”, “01”, “10”, or “11”) can represent more than two memory states (i.e., multiple bits per memory cell can be stored as a multi-level cell—MLC).
Note that in alternate embodiments, other materials and layers can be disposed between those structures shown in
CMO Type 1 material 406 can be formed from relatively large-sized grains in relatively crystalline structures, whereas CMO Type 2 material 404 can be formed from relatively fine-sized grains in relatively irregular crystalline structures. According to various embodiments, layer of CMO Type 1 material 406 is formed with grains 440b having an orientation 414 and a grain size 442. CMO Type 2 material 404 is deposited as a layer in which grains 440a adopt similar grain orientations 414 and grain dimensions or sizes 442 from layer of CMO Type 1 material 406 (e.g., grain size and grain orientation are replicated or mimicked in CMO Type 2 material 404). Here, replication of the grain size and/or grain orientation in CMO Type 2 material 404 may be identical to or substantially identical to the grain size and/or grain orientation in CMO Type 1 material 406. In some embodiments, CMO Type 2 material 404 may be formed first followed by CMO Type 1 material 406 being formed on layer 404. The replication of the grain size and/or grain orientation in CMO Type 1 material 406 may be identical to or substantially identical to the grain size and/or grain orientation in CMO Type 2 material 404 (see
Although only one layer of IMO material 402 is depicted, the present invention is not limited to a single layer of IMO and additional IMO layers may be formed in contact with one another and having a combined thickness that is approximately 50 Angstroms or less. A memory element including multiple IMO layers (i.e., at least two IMO layers) their composition, and formation is described in U.S. patent application Ser. No. 13/250,772, filed Sep. 30, 2011, and titled “Memory Device Using Multiple Tunnel Oxide Layers”, already incorporated herein by reference.
In at least some embodiments, memory cell 800 can include optionally a selection device (SD) (e.g., a NOD) 814, which, in turn, can be formed on the memory element 802 (e.g., either above or below memory element 802). SD 814 can be a “metal-insulator-metal” (MIM) type structure that includes one or more layers of electronically insulating material that are in contact with one another and sandwiched between metal layers (e.g., electrodes), or SD 814 can be a non-linear device (e.g., one or more diodes or one or more transistors). U.S. Pat. No. 7,995,371, issued on Aug. 9, 2011, and titled “Threshold Device For A Memory Array and U.S. Pat. No. 7,884,349, issued on Feb. 8, 2011, and titled “Selection Device for Re-Writable Memory”, both of which are already incorporated herein by reference. Memory cell 800 can be formed between conductive array lines, such as array lines 892 and 894. Thus, memory cell 800 can be formed in an array with other memory cells, and the array can be a cross-point array 899 with groups of conductive array lines 892 and 894. For example, array line 892a can be electrically coupled with the electrode 812 of the memory cells 800 and/or may be in contact with a surface of the electrode 812. Array line 894a can be electrically coupled via support layer 818 with the electrode 816 of the memory cells 800 and/or may be in contact via support layer 818 with a surface of electrode 816.
Trenches 901 and 951 of
Thin-Film Deposition Techniques
Thin-film layers for the CMO, IMO, electrodes, or other layers for the memory element (ME) and selection device (SD) described herein can be formed using a variety of microelectronics thin-film layer deposition techniques used for nanometer and sub-nanometer device fabrication, examples of which include, but are not limited to, physical vapor deposition (PVD), sputtering, reactive sputtering, co-sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), nano-deposition, atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), gas cluster ion beam deposition (GCIB), combinations of those techniques, and the like, just to name a few. Further, some or all of the electrode structures can be formed using a plating process, such as electroless plating, for example.
For ALD or PEALD, a thin-film layer, such as an IMO layer and/or a CMO layer can be deposited in whole using ALD or PEALD, or can be deposited in part using ALD or PEALD and some other process, such as PVD or CVD can be used to in conjunction with the ALD or PEALD to deposit the IMO and/or CMO. Therefore, the CMO layer(s) can be deposited in whole or in part using ALD or PEALD and the IMO layers can be deposited in whole or in part using ALD or PEALD. Doping of one or more of the IMO layers and/or doping of the one or more layers of CMO can also be accomplished using the above deposition techniques or combination of those techniques. Doping can occur insitu as part of the deposition process (e.g., doping ceria oxide with gadolinium during the deposition of the ceria oxide).
In some embodiments, some or all of the IMO layers or one or more of the CMO layers are deposited insitu without a chamber break. That is, if there are three layers of IMO, than some or all of those three layers can be deposited insitu in the same deposition chamber. Similarly, if there are multiple layers of CMO, then some or all of those layers can be deposited insitu in the same deposition chamber. Variations in stoichiometry in general or as a function of layer thickness can also be accomplished using the above deposition techniques and the deposition can be accomplished insitu.
The various embodiments of the invention can be implemented in numerous ways, including as a system, a process, an apparatus, or a series of program instructions on a computer readable medium such as a computer readable storage medium or a computer network where the program instructions are sent over optical or electronic communication links. In general, the steps of disclosed processes can be performed in an arbitrary order, unless otherwise provided in the claims.
The foregoing description, for purposes of explanation, uses specific nomenclature to provide a thorough understanding of the invention. However, it will be apparent to one skilled in the art that specific details are not required in order to practice the invention. In fact, this description should not be read to limit any feature or aspect of the present invention to any embodiment; rather features and aspects of one embodiment can readily be interchanged with other embodiments. Notably, not every benefit described herein need be realized by each embodiment of the present invention; rather any specific embodiment can provide one or more of the advantages discussed above. In the claims, elements and/or operations do not imply any particular order of operation, unless explicitly stated in the claims. It is intended that the following claims and their equivalents define the scope of the invention.
This application is a continuation of and claims priority benefit to U.S. patent application Ser. No. 16/705,077, filed Dec. 5, 2019, which is a continuation and claims priority benefit to U.S. patent application Ser. No. 16/219,219, filed Dec. 13, 2018, which is a continuation and claims priority benefit to U.S. patent application Ser. No. 15/811,179, filed Nov. 13, 2017, now U.S. Pat. No. 10,186,553, which is a continuation of and claims priority benefit to U.S. patent application Ser. No. 15/338,857, filed Oct. 31, 2016, now U.S. Pat. No. 9,818,799, which is a continuation of and claims priority benefit to U.S. patent application Ser. No. 14/453,982, filed Aug. 7, 2014, now U.S. Pat. No. 9,484,533, which is a continuation of and claims priority benefit to U.S. patent application Ser. No. 13/250,923, filed Sep. 30, 2011. This application is related to U.S. patent application Ser. No. 11/095,026, filed Mar. 30, 2005, published as U.S. publication no. 2006/0171200, and entitled “Memory Using Mixed Valence Conductive Oxides;” U.S. patent application Ser. No. 12/653,836, filed Dec. 18, 2009, and published as U.S. publication no. 2010/0157658, and titled “Conductive Metal Oxide Structures In Non-Volatile Re-Writable Memory Devices;” U.S. Pat. No. 7,897,951, issued on Mar. 1, 2011, and titled “Continuous Plane Of Thin-Film Materials For A Two-Terminal Cross-Point Memory;” U.S. patent application Ser. No. 12/653,851, filed Dec. 18, 2009, and published as U.S. publication no. 2010/0159641, and titled “Memory Cell Formation Using Ion Implant Isolated Conductive Metal Oxide;” U.S. patent application Ser. No. 13/171,350, filed Jun. 28, 2011, and titled “Multilayer Cross-Point Memory Array Having Reduced Disturb Susceptibility;” U.S. patent application Ser. No. 13/210,342, filed Aug. 15, 2011, and titled “Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non-Volatile Two-Terminal Memory Elements;” U.S. Pat. No. 7,995,371, issued on Aug. 9, 2011, and titled “Threshold Device For A Memory Array;” U.S. Pat. No. 7,884,349, issued on Feb. 8, 2011, and titled “Selection Device for Re-Writable Memory;” U.S. patent application Ser. No. 12/454,322, filed May 15, 2009, and titled “Device Fabrication;” U.S. patent application Ser. No. 13/250,772, filed Sep. 30, 2011, and titled “Memory Device Using Multiple Tunnel Oxide Layers;” and U.S. patent application Ser. No. 13/210,292, filed Aug. 15, 2011, and titled “Vertical Cross-Point Arrays For Ultra-High-Density Memory Applications.” All of the above-referenced applications, application publications, and issued patents are hereby incorporated by reference in their entirety for all purposes.
Number | Name | Date | Kind |
---|---|---|---|
3886577 | Buckley | May 1975 | A |
4519032 | Mendell | May 1985 | A |
4830981 | Baglee | May 1989 | A |
4843059 | Deslandes | Jun 1989 | A |
5160987 | Pricer | Nov 1992 | A |
5296716 | Ovshinsky | Mar 1994 | A |
5469564 | Junya | Nov 1995 | A |
5479317 | Ramesh | Dec 1995 | A |
5483482 | Kamada et al. | Jan 1996 | A |
5536947 | Klersy et al. | Jul 1996 | A |
5572461 | Gonzalez | Nov 1996 | A |
5625587 | Peng et al. | Apr 1997 | A |
5719416 | Yoshimori et al. | Feb 1998 | A |
5739135 | Biller et al. | Apr 1998 | A |
5767115 | Rosenblum et al. | Jun 1998 | A |
5789320 | Andricacos | Aug 1998 | A |
5835396 | Zhang | Nov 1998 | A |
5852307 | Aoyama | Dec 1998 | A |
5883109 | Gregg et al. | Mar 1999 | A |
5894135 | Yamamoto | Apr 1999 | A |
5985757 | Lee et al. | Nov 1999 | A |
5991193 | Gallagher et al. | Nov 1999 | A |
6005810 | Wu | Dec 1999 | A |
6026042 | Shirley et al. | Feb 2000 | A |
6034882 | Johnson et al. | Mar 2000 | A |
6128214 | Kuekes et al. | Oct 2000 | A |
6130814 | Sun | Oct 2000 | A |
6140672 | Arita et al. | Oct 2000 | A |
6185121 | O'Neill | Feb 2001 | B1 |
6185122 | Johnson et al. | Feb 2001 | B1 |
6194454 | Dow | Feb 2001 | B1 |
6204139 | Liu et al. | Mar 2001 | B1 |
6236076 | Arita et al. | May 2001 | B1 |
6256220 | Kamp | Jul 2001 | B1 |
6259644 | Tran et al. | Jul 2001 | B1 |
6326671 | Nagano et al. | Dec 2001 | B1 |
6351406 | Johnson et al. | Feb 2002 | B1 |
6370056 | Chen | Apr 2002 | B1 |
6385074 | Johnson et al. | May 2002 | B1 |
6407953 | Cleeves | Jun 2002 | B1 |
6420215 | Knall et al. | Jul 2002 | B1 |
6458621 | Beck | Oct 2002 | B1 |
6459095 | Heath et al. | Oct 2002 | B1 |
6473332 | Ignatiev et al. | Oct 2002 | B1 |
6475812 | Nickel | Nov 2002 | B2 |
6487106 | Kozicki | Nov 2002 | B1 |
6504753 | Scheuerlein et al. | Jan 2003 | B1 |
6515888 | Johnson et al. | Feb 2003 | B2 |
6515904 | Moore et al. | Feb 2003 | B2 |
6518156 | Chen | Feb 2003 | B1 |
6522594 | Scheuerlein | Feb 2003 | B1 |
6525953 | Johnson | Feb 2003 | B1 |
6528365 | Nagano et al. | Mar 2003 | B2 |
6531371 | Hsu | Mar 2003 | B2 |
6534403 | Cleeves | Mar 2003 | B2 |
6534784 | Eliasson | Mar 2003 | B2 |
6545891 | Tringali et al. | Apr 2003 | B1 |
6545898 | Scheuerlein | Apr 2003 | B1 |
6563185 | Moddel | May 2003 | B2 |
6569745 | Hsu | May 2003 | B2 |
6580120 | Haspeslagh | Jun 2003 | B2 |
6599796 | Mei et al. | Jul 2003 | B2 |
6631085 | Kleveland et al. | Oct 2003 | B2 |
6635603 | Batlogg | Oct 2003 | B1 |
6642539 | Ramesh et al. | Nov 2003 | B2 |
6656785 | Chiang | Dec 2003 | B2 |
6657888 | Doudin | Dec 2003 | B1 |
6693821 | Hsu et al. | Feb 2004 | B2 |
6731528 | Hush | May 2004 | B2 |
6741495 | Kunikiyo | May 2004 | B2 |
6753561 | Rinerson | Jun 2004 | B1 |
6756649 | Moddel | Jun 2004 | B2 |
6759249 | Zhuang et al. | Jul 2004 | B2 |
6762071 | Eliasson | Jul 2004 | B2 |
6765245 | Bansal | Jul 2004 | B2 |
6674054 | Zhang et al. | Aug 2004 | B2 |
6777248 | Nabatame et al. | Aug 2004 | B1 |
6778420 | Parkinson | Aug 2004 | B2 |
6781166 | Lieber | Aug 2004 | B2 |
6784517 | Kleveland | Aug 2004 | B2 |
6788576 | Roizin | Sep 2004 | B2 |
6798685 | Rinerson | Sep 2004 | B2 |
6807088 | Tsuchida | Oct 2004 | B2 |
6816410 | Kleveland et al. | Nov 2004 | B2 |
6822903 | Scheuerlein et al. | Nov 2004 | B2 |
6825058 | Hsu | Nov 2004 | B2 |
6825489 | Kozicki | Nov 2004 | B2 |
6831313 | Uchiyama | Dec 2004 | B2 |
6834013 | Fan | Dec 2004 | B2 |
6836421 | Rinerson et al. | Dec 2004 | B2 |
6839269 | Iwata et al. | Jan 2005 | B2 |
6841833 | Hsu | Jan 2005 | B2 |
6849564 | Hsu | Feb 2005 | B2 |
6850455 | Rinerson et al. | Feb 2005 | B2 |
6855647 | Beck | Feb 2005 | B2 |
6856536 | Rinerson | Feb 2005 | B2 |
6859382 | Rinerson et al. | Feb 2005 | B2 |
6870755 | Rinerson | Mar 2005 | B2 |
6875651 | Hsu | Apr 2005 | B2 |
6882553 | Nejad et al. | Apr 2005 | B2 |
6884812 | Glombick et al. | Apr 2005 | B2 |
6903361 | Gilton | Jun 2005 | B2 |
6917539 | Rinerson et al. | Jul 2005 | B2 |
6927430 | Hsu | Aug 2005 | B2 |
6937505 | Morikawa | Aug 2005 | B2 |
6939724 | Zhuang | Sep 2005 | B2 |
6940113 | Hsu et al. | Sep 2005 | B2 |
6940744 | Rinerson et al. | Sep 2005 | B2 |
6965137 | Kinney | Nov 2005 | B2 |
6970375 | Rinerson et al. | Nov 2005 | B2 |
6970391 | Watanabe et al. | Nov 2005 | B2 |
6972238 | Hsu | Dec 2005 | B2 |
6972427 | Roehr | Dec 2005 | B2 |
6985378 | Kozicki | Jan 2006 | B2 |
6990008 | Bednorz | Jan 2006 | B2 |
6998698 | Inoue | Feb 2006 | B2 |
6999339 | Tuttle et al. | Feb 2006 | B2 |
7001846 | Hsu | Feb 2006 | B2 |
7002197 | Perner | Feb 2006 | B2 |
7005717 | Eisenbeiser | Feb 2006 | B2 |
7009909 | Rinerson et al. | Mar 2006 | B2 |
7020006 | Chevallier et al. | Mar 2006 | B2 |
7022572 | Scheuerlein et al. | Apr 2006 | B2 |
7023743 | Nejad et al. | Apr 2006 | B2 |
7026693 | Shimizu | Apr 2006 | B2 |
7029924 | Hsu | Apr 2006 | B2 |
7042066 | Hsu | May 2006 | B2 |
7046550 | Reohr et al. | May 2006 | B1 |
7057914 | Rinerson et al. | Jun 2006 | B2 |
7060586 | Li | Jun 2006 | B2 |
7067862 | Rinerson | Jun 2006 | B2 |
7068533 | Ferrant | Jun 2006 | B2 |
7075817 | Rinerson et al. | Jul 2006 | B2 |
7079442 | Rinerson et al. | Jul 2006 | B2 |
7082052 | Rinerson | Jul 2006 | B2 |
7098043 | Zhuang | Aug 2006 | B2 |
7105852 | Moddel | Sep 2006 | B2 |
7106639 | Taussig et al. | Sep 2006 | B2 |
7141481 | Hsu et al. | Nov 2006 | B2 |
7148533 | Hsu | Dec 2006 | B2 |
7149107 | Rinerson et al. | Dec 2006 | B2 |
7173275 | Estes | Feb 2007 | B2 |
7177181 | Scheuerlein | Feb 2007 | B1 |
7180772 | Rinerson | Feb 2007 | B2 |
7205238 | Pan | Apr 2007 | B2 |
7212432 | Ferrant | May 2007 | B2 |
7218984 | Bayat | May 2007 | B1 |
7227774 | Tuttle et al. | Jun 2007 | B2 |
7227775 | Rinerson et al. | Jun 2007 | B2 |
7235454 | Kim | Jun 2007 | B2 |
7256415 | Furukawa et al. | Aug 2007 | B2 |
7256429 | Hsu et al. | Aug 2007 | B2 |
7257458 | Markle | Aug 2007 | B1 |
7259076 | Hsu | Aug 2007 | B2 |
7271063 | Chung-Zen | Sep 2007 | B2 |
7272067 | Huang | Sep 2007 | B1 |
7283403 | Johnson | Oct 2007 | B2 |
7292957 | Schell | Nov 2007 | B1 |
7306988 | Avanzino | Dec 2007 | B1 |
7319053 | Subramanian | Jan 2008 | B2 |
7326979 | Rinerson et al. | Feb 2008 | B2 |
7327600 | Norman | Feb 2008 | B2 |
7327753 | Raissinia et al. | Feb 2008 | B2 |
7335575 | Hsu | Feb 2008 | B2 |
7337149 | Blouin | Feb 2008 | B2 |
7339811 | Nejad et al. | Mar 2008 | B2 |
7359226 | Schwerin | Apr 2008 | B2 |
7372753 | Rinerson et al. | May 2008 | B1 |
7379364 | Siau et al. | May 2008 | B2 |
7381981 | Aitken | Jun 2008 | B2 |
7388276 | Estes | Jun 2008 | B2 |
7394679 | Rinerson et al. | Jul 2008 | B2 |
7394680 | Toda et al. | Jul 2008 | B2 |
7400006 | Rinerson | Jul 2008 | B1 |
7405960 | Cho et al. | Jul 2008 | B2 |
7408212 | Luan | Aug 2008 | B1 |
7411811 | Inoue | Aug 2008 | B2 |
7417271 | Genrikh et al. | Aug 2008 | B2 |
7433222 | Hosoi | Oct 2008 | B2 |
7443711 | Stewart et al. | Oct 2008 | B1 |
7446010 | Li | Nov 2008 | B2 |
7457147 | Rinerson et al. | Nov 2008 | B2 |
7459716 | Toda | Dec 2008 | B2 |
7460385 | Gruber | Dec 2008 | B2 |
7462857 | Arai | Dec 2008 | B2 |
7463546 | Fasoli et al. | Dec 2008 | B2 |
7464621 | Mathis et al. | Dec 2008 | B2 |
7498600 | Cho et al. | Mar 2009 | B2 |
7505344 | Scheuerlein | Mar 2009 | B2 |
7508695 | Sugita | Mar 2009 | B2 |
7514271 | Gaidis | Apr 2009 | B2 |
7526743 | Arp | Apr 2009 | B2 |
7535035 | Baek | May 2009 | B2 |
7538338 | Rinerson et al. | May 2009 | B2 |
7554873 | Lee | Jun 2009 | B2 |
7558099 | Morimoto | Jul 2009 | B2 |
7569459 | Karg | Aug 2009 | B2 |
7573753 | Atwood et al. | Aug 2009 | B2 |
7577022 | Muraoka | Aug 2009 | B2 |
7593284 | Norman | Sep 2009 | B2 |
7606086 | Inoue | Oct 2009 | B2 |
7608467 | Wu et al. | Oct 2009 | B2 |
7633108 | Li | Dec 2009 | B2 |
7633790 | Rinerson et al. | Dec 2009 | B2 |
7639521 | Baek et al. | Dec 2009 | B2 |
7643344 | Choi | Jan 2010 | B2 |
7649788 | Norman | Jan 2010 | B2 |
7652501 | Norman | Jan 2010 | B2 |
7652502 | Norman | Jan 2010 | B2 |
7701791 | Rinerson et al. | Apr 2010 | B2 |
7706177 | Petti | Apr 2010 | B2 |
7715244 | Norman | May 2010 | B2 |
7715250 | Norman | May 2010 | B2 |
7719876 | Chevallier et al. | May 2010 | B2 |
7733685 | Scheuerlein et al. | Jun 2010 | B2 |
7742323 | Rinerson et al. | Jun 2010 | B2 |
7764160 | Kawano | Jul 2010 | B2 |
7778061 | Robinett | Aug 2010 | B2 |
7782650 | Bertin et al. | Aug 2010 | B2 |
7796416 | Ishihara | Sep 2010 | B2 |
7796451 | Norman | Sep 2010 | B2 |
7807517 | Kim | Oct 2010 | B2 |
7813210 | Norman | Oct 2010 | B2 |
7818523 | Norman | Oct 2010 | B2 |
7822913 | Norman | Oct 2010 | B2 |
7824982 | Forbes | Nov 2010 | B2 |
7832090 | Bornstein | Nov 2010 | B1 |
7842991 | Cho et al. | Nov 2010 | B2 |
7877541 | Norman | Jan 2011 | B2 |
7884349 | Rinerson et al. | Feb 2011 | B2 |
7889539 | Rinerson et al. | Feb 2011 | B2 |
7889571 | Norman | Feb 2011 | B2 |
7897951 | Rinerson | Mar 2011 | B2 |
7898841 | Chevallier et al. | Mar 2011 | B2 |
7902861 | Coenen | Mar 2011 | B2 |
7902862 | How | Mar 2011 | B2 |
7902863 | Tetzlaff | Mar 2011 | B1 |
7902866 | Patterson | Mar 2011 | B1 |
7902867 | Mouttet | Mar 2011 | B2 |
7902868 | Norman | Mar 2011 | B2 |
7902869 | Carter | Mar 2011 | B1 |
7910913 | Choi | Mar 2011 | B2 |
7920408 | Azuma | Apr 2011 | B2 |
7924608 | Campbell | Apr 2011 | B2 |
7929345 | Issaq | Apr 2011 | B2 |
7932548 | Nagashima | Apr 2011 | B2 |
7935953 | Ahn | May 2011 | B2 |
7955871 | Wu et al. | Jun 2011 | B2 |
7961494 | Scheuerlein | Jun 2011 | B2 |
7982504 | Robinett | Jul 2011 | B1 |
7983065 | Samachisa | Jul 2011 | B2 |
7985963 | Rinerson et al. | Jul 2011 | B2 |
7990753 | Matsuo | Aug 2011 | B2 |
7990754 | Azuma | Aug 2011 | B2 |
7995371 | Rinerson | Aug 2011 | B2 |
7999307 | Kim | Aug 2011 | B2 |
8003511 | Rinerson | Aug 2011 | B2 |
8031509 | Schloss | Oct 2011 | B2 |
8040723 | Sheu et al. | Oct 2011 | B2 |
8044456 | Nagashima | Oct 2011 | B2 |
8050084 | Bae et al. | Nov 2011 | B2 |
8062942 | Rinerson et al. | Nov 2011 | B2 |
8064256 | Norman | Nov 2011 | B2 |
8124968 | Koo | Feb 2012 | B2 |
8134866 | Bae et al. | Mar 2012 | B2 |
8139409 | Chevallier et al. | Mar 2012 | B2 |
8159858 | Siau | Apr 2012 | B2 |
8164937 | Norman | Apr 2012 | B2 |
8164970 | Norman | Apr 2012 | B2 |
8169053 | Kim | May 2012 | B2 |
8187936 | Alsmeier | May 2012 | B2 |
8198618 | Mikawa | Jun 2012 | B2 |
8207613 | Okukawa | Jun 2012 | B2 |
8208284 | Schloss | Jun 2012 | B2 |
8237145 | Kamata | Aug 2012 | B2 |
8264864 | Meyer | Sep 2012 | B2 |
8270193 | Siau et al. | Sep 2012 | B2 |
8317910 | Cheung | Nov 2012 | B2 |
8363443 | Chevallier et al. | Jan 2013 | B2 |
8390100 | Bornstein | Mar 2013 | B2 |
8427868 | Chevallier et al. | Apr 2013 | B2 |
8431919 | Nansei | Apr 2013 | B2 |
8482958 | Hayakawa et al. | Jul 2013 | B2 |
8559209 | Siau | Oct 2013 | B2 |
8565003 | Siau | Oct 2013 | B2 |
8638584 | Chevallier et al. | Jan 2014 | B2 |
8654565 | Chevallier et al. | Feb 2014 | B2 |
8664633 | Park | Mar 2014 | B2 |
8675389 | Chevallier et al. | Mar 2014 | B2 |
8854881 | Chevallier et al. | Oct 2014 | B2 |
8891276 | Siau et al. | Nov 2014 | B2 |
8937292 | Bateman | Jan 2015 | B2 |
9129668 | Chevallier et al. | Sep 2015 | B2 |
9159408 | Chevallier et al. | Oct 2015 | B2 |
9384806 | Chevallier et al. | Jul 2016 | B2 |
9564199 | Luan et al. | Feb 2017 | B2 |
9570515 | Chevallier et al. | Feb 2017 | B2 |
9806130 | Chevallier et al. | Oct 2017 | B2 |
9818799 | Wu et al. | Nov 2017 | B2 |
9870809 | Chevallier et al. | Jan 2018 | B2 |
10186553 | Wu et al. | Jan 2019 | B2 |
10210917 | Chevallier et al. | Feb 2019 | B2 |
10650870 | Chevallier et al. | May 2020 | B2 |
20010055838 | Walker et al. | Dec 2001 | A1 |
20020061604 | Sitaram | May 2002 | A1 |
20020114112 | Nakashio | Aug 2002 | A1 |
20020168785 | Paz de Araujo | Nov 2002 | A1 |
20030003674 | Hsu et al. | Jan 2003 | A1 |
20030003675 | Hsu | Jan 2003 | A1 |
20030043633 | Forbes | Mar 2003 | A1 |
20030132456 | Miyai | Jul 2003 | A1 |
20030137869 | Kozicki | Jul 2003 | A1 |
20030148545 | Zhuang et al. | Aug 2003 | A1 |
20030151959 | Tringali | Aug 2003 | A1 |
20030156445 | Zhuang et al. | Aug 2003 | A1 |
20040004237 | Fox | Jan 2004 | A1 |
20040063274 | Hsu | Apr 2004 | A1 |
20040100817 | Subramanian | May 2004 | A1 |
20040109353 | Matsuoka | Jun 2004 | A1 |
20040114413 | Parkinson | Jun 2004 | A1 |
20040141369 | Noguchi | Jul 2004 | A1 |
20040159828 | Rinerson | Aug 2004 | A1 |
20040159867 | Kinney et al. | Aug 2004 | A1 |
20040159868 | Rinerson | Aug 2004 | A1 |
20040159869 | Rinerson et al. | Aug 2004 | A1 |
20040161888 | Rinerson | Aug 2004 | A1 |
20040170040 | Rinerson et al. | Sep 2004 | A1 |
20040180507 | Zhang et al. | Sep 2004 | A1 |
20050018516 | Chevallier et al. | Jan 2005 | A1 |
20050040482 | Suzuki | Feb 2005 | A1 |
20050083760 | Subramanian | Apr 2005 | A1 |
20050111263 | Rinerson | May 2005 | A1 |
20050135148 | Chevallier | Jun 2005 | A1 |
20050151156 | Wu | Jul 2005 | A1 |
20050174835 | Rinerson et al. | Aug 2005 | A1 |
20050200785 | Jones | Sep 2005 | A1 |
20050243595 | Rinerson et al. | Nov 2005 | A1 |
20050269626 | Forbes | Dec 2005 | A1 |
20060018149 | Rinerson et al. | Jan 2006 | A1 |
20060023497 | Kawazoe | Feb 2006 | A1 |
20060050598 | Rinerson et al. | Mar 2006 | A1 |
20060054937 | Lucovsky et al. | Mar 2006 | A1 |
20060125102 | Wu | Jun 2006 | A1 |
20060131695 | Kuekes et al. | Jun 2006 | A1 |
20060171200 | Rinerson et al. | Aug 2006 | A1 |
20060245241 | Rinerson et al. | Nov 2006 | A1 |
20060245243 | Rinerson et al. | Nov 2006 | A1 |
20060252733 | Jansen | Nov 2006 | A1 |
20060273301 | Moddel | Dec 2006 | A1 |
20070018219 | Lim | Jan 2007 | A1 |
20070027093 | Ogawa et al. | Feb 2007 | A1 |
20070032404 | Sweet et al. | Feb 2007 | A1 |
20070105390 | Oh | May 2007 | A1 |
20070120110 | Estes | May 2007 | A1 |
20070132049 | Stipe | Jun 2007 | A1 |
20070155145 | Hong | Jul 2007 | A1 |
20070166989 | Fresco | Jul 2007 | A1 |
20070223282 | Sarig | Sep 2007 | A1 |
20070252201 | Kito | Nov 2007 | A1 |
20070253245 | Ranjan et al. | Nov 2007 | A1 |
20070269683 | Chen | Nov 2007 | A1 |
20080005459 | Norman | Jan 2008 | A1 |
20080014750 | Nagashima | Jan 2008 | A1 |
20080054317 | Kim | Mar 2008 | A1 |
20080068875 | Choi | Mar 2008 | A1 |
20080079029 | Williams | Apr 2008 | A1 |
20080084727 | Norman | Apr 2008 | A1 |
20080090337 | Williams | Apr 2008 | A1 |
20080090401 | Bratkovski et al. | Apr 2008 | A1 |
20080109775 | Norman | May 2008 | A1 |
20080157127 | Bertin et al. | Jul 2008 | A1 |
20080173975 | Chen | Jul 2008 | A1 |
20080175032 | Tanaka | Jul 2008 | A1 |
20080217600 | Gidon | Sep 2008 | A1 |
20080237800 | Chinthakindi | Oct 2008 | A1 |
20080247219 | Choi | Oct 2008 | A1 |
20080265235 | Kamigaichi | Oct 2008 | A1 |
20080272363 | Mouli | Nov 2008 | A1 |
20080273363 | Mouli | Nov 2008 | A1 |
20080278989 | Lee et al. | Nov 2008 | A1 |
20080293196 | Rinerson et al. | Nov 2008 | A1 |
20090016094 | Rinerson | Jan 2009 | A1 |
20090020744 | Mizukami | Jan 2009 | A1 |
20090026434 | Malhotra | Jan 2009 | A1 |
20090026441 | Cheung | Jan 2009 | A1 |
20090026442 | Cheung | Jan 2009 | A1 |
20090027976 | Rinerson et al. | Jan 2009 | A1 |
20090045390 | Rinerson et al. | Feb 2009 | A1 |
20090101885 | Seko | Apr 2009 | A1 |
20090122598 | Toda | May 2009 | A1 |
20090146325 | Liu | Jun 2009 | A1 |
20090154232 | Norman | Jun 2009 | A1 |
20090164203 | Norman | Jun 2009 | A1 |
20090164744 | Norman | Jun 2009 | A1 |
20090172350 | Norman | Jul 2009 | A1 |
20090179184 | Liu | Jul 2009 | A1 |
20090196083 | Norman | Aug 2009 | A1 |
20090198485 | Norman | Aug 2009 | A1 |
20090213633 | Rinerson | Aug 2009 | A1 |
20090225582 | Schloss | Sep 2009 | A1 |
20090261314 | Kim | Oct 2009 | A1 |
20090302315 | Lee et al. | Dec 2009 | A1 |
20090303772 | Rinerson | Dec 2009 | A1 |
20090303773 | Rinerson | Dec 2009 | A1 |
20090316465 | Jain | Dec 2009 | A1 |
20100044666 | Baek et al. | Feb 2010 | A1 |
20100051896 | Park | Mar 2010 | A1 |
20100067279 | Choi | Mar 2010 | A1 |
20100073990 | Siau et al. | Mar 2010 | A1 |
20100078759 | Sekar et al. | Apr 2010 | A1 |
20100103724 | Kim | Apr 2010 | A1 |
20100108975 | Sun | May 2010 | A1 |
20100110758 | Li | May 2010 | A1 |
20100110771 | Choi | May 2010 | A1 |
20100115220 | Lee et al. | May 2010 | A1 |
20100118589 | Carter | May 2010 | A1 |
20100134239 | Wu et al. | Jun 2010 | A1 |
20100155686 | Bratkovski et al. | Jun 2010 | A1 |
20100155687 | Reyes | Jun 2010 | A1 |
20100155722 | Meyer | Jun 2010 | A1 |
20100155723 | Bornstein et al. | Jun 2010 | A1 |
20100155953 | Bornstein | Jun 2010 | A1 |
20100157647 | Rinerson et al. | Jun 2010 | A1 |
20100157657 | Rinerson et al. | Jun 2010 | A1 |
20100157658 | Schloss et al. | Jun 2010 | A1 |
20100157670 | Chevallier et al. | Jun 2010 | A1 |
20100157710 | Lambertson | Jun 2010 | A1 |
20100159641 | Rinerson et al. | Jun 2010 | A1 |
20100159688 | Rinerson et al. | Jun 2010 | A1 |
20100161888 | Eggleston | Jun 2010 | A1 |
20100161918 | Norman | Jun 2010 | A1 |
20100187660 | Tang | Jul 2010 | A1 |
20100195393 | Eggleston | Aug 2010 | A1 |
20100202188 | Rinerson et al. | Aug 2010 | A1 |
20100219392 | Awaya | Sep 2010 | A1 |
20100232200 | Shepard | Sep 2010 | A1 |
20100232240 | Norman | Sep 2010 | A1 |
20100259960 | Samachisa | Oct 2010 | A1 |
20100271885 | Scheuerlein et al. | Oct 2010 | A1 |
20100278479 | Bratkovski et al. | Nov 2010 | A1 |
20100290294 | Siau | Nov 2010 | A1 |
20100323490 | Sreenivasan | Dec 2010 | A1 |
20110006275 | Roelofs et al. | Jan 2011 | A1 |
20110017977 | Bratkovski et al. | Jan 2011 | A1 |
20110024710 | Bratkovski et al. | Feb 2011 | A1 |
20110024716 | Bratkovski et al. | Feb 2011 | A1 |
20110059576 | Cho et al. | Mar 2011 | A1 |
20110063914 | Mikajiri | Mar 2011 | A1 |
20110149634 | Schloss et al. | Jun 2011 | A1 |
20110149636 | Schloss et al. | Jun 2011 | A1 |
20110155990 | Cheung | Jun 2011 | A1 |
20110182103 | Smythe et al. | Jul 2011 | A1 |
20110186803 | Rinerson et al. | Aug 2011 | A1 |
20110188281 | Chevallier et al. | Aug 2011 | A1 |
20110188282 | Chevallier et al. | Aug 2011 | A1 |
20110188283 | Chevallier et al. | Aug 2011 | A1 |
20110188284 | Chevallier et al. | Aug 2011 | A1 |
20110188289 | Chevallier et al. | Aug 2011 | A1 |
20110204019 | Bornstein | Aug 2011 | A1 |
20110220860 | Kim | Sep 2011 | A1 |
20110266538 | Lee | Nov 2011 | A1 |
20110297927 | Ramaswamy et al. | Dec 2011 | A1 |
20120012897 | Besser et al. | Jan 2012 | A1 |
20120033481 | Rinerson et al. | Feb 2012 | A1 |
20120064691 | Rinerson et al. | Mar 2012 | A1 |
20120087174 | Rinerson | Apr 2012 | A1 |
20120091413 | Nguyen | Apr 2012 | A1 |
20120147678 | Norman | Jun 2012 | A1 |
20120211716 | Meyer | Aug 2012 | A1 |
20120314468 | Siau | Dec 2012 | A1 |
20130043452 | Meyer | Feb 2013 | A1 |
20130043455 | Bateman | Feb 2013 | A1 |
20130082228 | Parrillo et al. | Apr 2013 | A1 |
20130082232 | Wu | Apr 2013 | A1 |
20140140122 | Siau | May 2014 | A1 |
Number | Date | Country |
---|---|---|
1376598 | Jan 2004 | EP |
1376598 | Jun 2006 | EP |
2003-092387 | Mar 2003 | JP |
2004-193595 | Jul 2004 | JP |
2005-203733 | Jul 2005 | JP |
0048196 | Aug 2000 | WO |
33079463 | Sep 2003 | WO |
2005117021 | May 2004 | WO |
2006029228 | Mar 2006 | WO |
07047880 | Apr 2007 | WO |
Entry |
---|
U.S. Appl. No. 60/536,115, filed Jan. 12, 2004 in the name of Yong CHEN. |
Casperson Brewer, Julie D., et al., “Determination of Energy Barrier Profiles for High-k Dielectric Materials Utilizing Bias-Dependent Internal Photoemission”, Applied Physics Letters, vol. 85, No. 18, Nov. 1, 2004, pp. 11334135. |
Casperson, J. D., “Design and Characterization of Layered Tunnel Barriers for Nonvolatile Memory Applications”, PhD Thesis, Caltech, May 17, 2004, pp. 1-143. |
Casperson, Julie D , et al., “Materials Issues for Layered Tunnel Barrier Structures”, Journal of Applied Physics, vol. 92, No. 1, Jul. 1, 2002, pp. 261-267. |
HP Datasheet, “HP Pavilion dv7-7012nr Entertainment PC,” Product No. B2P31 UA#ABA, Ad Embargo date of Apr. 29, 2012, 2 pages. |
Korotkov, Alexander, et al., “Resonant Fowler-Nordheim Tunneling Through Layered Tunnel Barriers and its Possible Applications”, Techn. Dig IDEM 1999, pp. 223-226. |
Kurjanowicz, Wlodek, “Evaluating Embedded Non-Volatile Memory for 65nm and Beyond”, DesignCon 2008, Feb. 4, 2008, 23 pages. |
Kwok, K. Ng, “Complete Guide to Semiconductor Devices”, 1995, McGraw-Hill Inc., pp. 11-40; pp. 56-62 pp. 84-91; pp. 337-349. |
Likharev, Konstantin K., “Layered Tunnel Barriers for Nonvolatile Memory Devices”, Applied Physics Letters, vol. 73, No. 15, Oct. 12, 1998, pp. 2137-2139. |
Luryi, S., et al., “Optimum Baritt Structure”, Solid-State Electronics, vol. 25, No. 9, Sep. 1982, pp. 943-945. |
Mikolajick, T., et al., “Scaling of Nonvolatile Memories to Nanoscale Feature Sizes”, Materials Science-Poland, vol. 25, No. 1, 2007, pp. 33-43. |
PCT International Preliminary Reporton Patentability dated Aug. 28, 2007 in PCT Application No. PCT/US2005/031913, 5 pages. |
PCT International Search Report dated Feb. 14, 2006 in PCT Application No. PCT/US2005/031913, 4 pages. |
PCT Written Opinion of the International Search Authority dated Sep. 3, 2004 in PCT Application No. PCT/2005/031913, 7 pages. |
Peacock, P. W., et al., “Band Offsets and Schottky Barrier Heights of High Dielectric Constant Oxides”, Journal of Applied Physics, vol. 92, No. 8, Oct. 15, 2002, pp. 4712-4721. |
Poltavets, Viktor V., “Outline of Research (a few examples)”, <http://www.poltavets.com/>, printed on Nov. 20, 2007, 4 pages. |
Subias, Gloria, et al., “Mn Local Structure Effects in Charge-Ordered Mixed-Valence RE1-xCaxMnO3 (RE: La, Tb) Perovskites: A Review of the Experimental Situation”, 2002 J. Phys.: Condens. Matter, vol. 14, pp. 5017-5033, abstract only. |
Tans, Sander J., et al., “Room-Temperature Transistor Based on a Single Carbon Nanotube”, Nature, vol. 393, May 7, 1998, pp. 49-52. |
Yamauchi Hisao et al., “Control of Mixed Valence Stae to Yield Novel Functions in Double-Perovskite Iron-Copper Oxides”, Science Links Japan, Nippon Sheet Glass Foundation for Materials Science and Engineering Report, vol. 21, 2003, pp. 113-122, abstract only. |
Beck, A. et al., “Reproducible switching effect in thin oxide films for memory applications,” Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000,139-141. |
Liu, S.Q., et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistivefilms”, Applied Physics Letters, vol. 76, No. 19, May 8, 2000, 2749-2651. |
Liu, S.Q., et al., “A New Concept For Non-Volatile Memory: Electric-Pulse Induced Reversible Resistance Change Effect In Magnetoresistive Films”, Non-Volatile Memory Technology Symposium, Nov. 7, 2001, Space Vacuum Epitaxy Center, University of Houston, Houston TX, pp. 1-7. |
Rossel, C. et al., “Electrical current distribution across a metal-insulator-metal structure during bistable switching,” Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, 2892-2898. |
Natanabe, Y. et al., “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals,” Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, 3738-3740. |
Zhuang, W.W. et al., “Novel colossal magnetoresislive thin film nonvolatile resistance random access memory (RRAM)”; IEDM Technical Digest, IEEE, Dec. 8, 2002, pp. 193-196. |
A.Baikalov, et al., “Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface” Applied Physics Letters, vol. 83, No. 5, Aug. 4, 2003, pp. 957-959. |
A. Sawa, et al., “Hysteretic current-volyage characteristics and resisitance switching at a rectifying Ti/Pro.7Cao.3MnO3 interface” Applied Physics Letters, vol. 85, No. 18, Nov. 1, 2004, pp. 4073-4075. |
David Oxley, “Memory Effects in Oxide Films” in Oxides and Oxide Films, vol. 6, pp. 251-325 (Chapter 4) (Ashok. K. Vijh ed., Marcel Drekker) (1981). |
J.G. Simmons and R.R. Verderber, New Conduction and Reversible Memory Phenomena in Thin Insulating Films/ Proc. Roy. Soc. A., 301 (1967), pp. 77-102. |
R.E. Thurstans and D.P. Oxley, “The Electroformed metal-insulator-metal structure: A comprehensive model,” J. Phys. D.: Appl. Phys 35 (2002), Apr. 2, 2002, pp. 802-809. |
R. Oligschlaeger, R. Waser, R. Meyer, S. Karthiiuser, R. Dillmann, “Resistive switching and data reliability of epitaxial (Ba,Sr)TiO thin films,” Applied Physics Letters, 88 (2006), 042901. |
S. Lai, T. Lowrey, “OUM—A 180 nm nonvolatile memory cell element technology for standalone and embedded applications,” IEEE International Electron Device Meeting, Technical Digest, 803 (2001). |
J. Mizusaki J, Y. Yonemura, H. Kamata, K. Ohyama, N. Mori, H. Takai, H. Tagawa M. Dokiya, K. Naraya, T. Sasamoto, H. Inaba, T . Hashimoto, “Electronic conductivity, Seebeck coefficient, defect and electronic structure of nonstoichiometric La1.xSr1MnO3,” Solid State Ionics 132, 167 (2000). |
Zhao Y. G.; Rajeswari M.; Srivastava R. C.; Biswas A.; Ogale S. B.; Kang D. J.; Prellier W.; Zhiyun Chen ; Greene R. L.; Venkatesan T., “Effect of oxygen content on the structural, transport, and magnetic properties of La1-deltaMn1-deltaO3 thin films,” Journal of Applied Physics, vol. 86, No. 11, Dec. 1999, pp. 6327-6330. |
B.C.H. Steele, A. Heinzel, “Materials for Fuel-Cell-Technologies,” Nature 414, Nov. 2001, pp. 345-352. |
A. RelJer, J.M. Thomas, D. A. Jefferson, M. K. Uppal, “Superstructures Formed by the Ordering of Vacancies in a Selective Oxidation Catalyst: Grossly Defective CaMnO3,” Proceedings of the Royal Society of London, vol. 394, No. 1807, Aug. 1984, pp. 223-241. |
A. J. Millis, “Cooperative Jahn-Teller effect and electron-phonon coupling in La1-xAxMnO3,” Phys. Rev. B 53, 8434-8441 (1996). |
Catapano, Ezetimibe: a selective inhibitor of cholesterol absorption, European Heart Journal Supplements 2001 (3, Supplemental E): E6-E10). |
Knopp RH, Drug treatment of lipid disorders. New England J. Med. 1999; 341 (7): 498-511; electronic pp. 1-25. |
Li, et al., “Discovery of Potent and Orally Active MTP Inhibitors as Potential Anti-Obesity Agents,” Bioorganic & Medicinal Chemistry Letters, Oxford, GB, vol. 16, No. 11, Jun. 1, 2006, pp. 3039-3042. |
Looije, Norbert A., et al., “Disodium Ascorbyl Phytostanyl Phosphates (FM-VP4) Reduces Plasma Cholesterol Concentration, Body Weight and Abdominal Fat Gain Within a Dietary-Induced Obese Mouse Model,” Journal of Pharmacy & Pharmaceutical Sciences: A Publication of the Canadian Society for Pharmaceutical Sciences, vol. 8, No. 3, 2005, pp. 400-408. |
Crowley et al., “16.4: 512Mb PROM with 8 Layers of Antifuse/Diode Cells,” 2003 IEEE ISSCC, First Edition, pp. 284-285, 493, Feb. 11, 2003. |
EP Office Action dated Aug. 2, 2007 in EP 05794930. 7. 4 pages. |
Lai et al., “OUM—A 180 nm Nanvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications,” IEEE International Electron Device Meeting, Technical Digest, vol. 803, 2001. |
Lee et al., “Near Edge X-ray Absorption Fine Structure Study of Pr0.65Ca0.35Mn03 Films,” Phys. Stat, sol (a) 196, No. 1, 2003, pp. 70-73. |
Millis, A.J., “Cooperative Jahn-Teller Effect and Electron-Phonon Coupling in La-1-xAx.Mn03”, Phys. Rev. B 53 8434-8441 (1996). 8 pages. |
Nian, Y.B., et al.,“ Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Oxides”, Texas Center for Advanced Materials, University of Houston (2006). 7 pages. |
Reller et al., “Superstructres Formed by the Ordering of Vacancies in a Selective Oxidation Catalyst: Grossly Defective CaMn03,” Proceedings of the Royal Society of London, vol. 394, No. 1807, Aug. 1984, pp. 223-241. |
Reller, A. et al.,“Superstructures Formed by the Ordering of Vacancies in a Selective Oxidation Catalyst: Grossly Defective CaMn03”, Printed in Great Britain, Department of Physical Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EP, U.K., vol. 194. Aug. 8, 1984. 1 page. |
Stetter. J.R., et al., “Sensors, Chemical Sensors, Electrochemical Sensors, and ECS”, Journal of Electrochemical Society, 150 (2), S11-S16 (2003). |
Zhao, Y.G., et al., “Effect of Oxygen Content on the Structural, Transport, and Magnetic Properties of La 1-deltaMn 1-delta03 thin films,” Journal of Applied Physics, vol. 86, No. 11, Dec. 1999, pp. 6327-6330. |
Zhuang, W.W. et al., “Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory RRAM)”, IEDM Technical Digest, IEEE, Dec. 8, 2002, pp. 193-196. |
Chemical Elements.com, “Periodic Table: Transition Metals”, 1996, downloaded0 Mar. 19, 2017 from http://www.chemicalelements.com/groups/transition.html. 2 pages. |
Abelmann et al., “Self-Assembled Three-Dimensional Non-Volatile Memories”, Micromachines, vol. 1, pp. 1-18, Jan. 18, 2010. |
Baek et al., “Realization of Vertical Resistive Memory (VRRAM) Using Cost Effective 3D Process”, IDEM 2011, 31, 8.1, pp. 737-740. |
Chevallier et al., “A 0.13um 64Mb Multi-layered Conductive Metal-Oxide Memory”, ISSC 2010/Session 14/Non-Volatile Memory/ 14.3, pp. 260-261. |
Dong et al., “Si/a-Si Core/Shell Nanowires as Nonvolatile Crossbar Switches”, Nano Letters 2008, vol. 8, No. 29, pp. 361-391. |
Jang et al., “Vertical Cell Array Using TCAT (Terabit Cell Array Transistor) Technology for Ultra High Density 11 NAND Flash Memory”, 2009 Symposium on VLSI Technology Digest of Technical Papers, pp. 192-193. |
Katsumata et al., “Pipe-Shaped BiCS Flash Memory with 16 Stacked Layers and Multi-Level-Cell Operation for Ultra High Density Storage Devices”, 2009 Symposium on VLSI Technology Digest of Technical Papers, pp. 136-137. |
Kim et al., “Novel Vertical-Stacked-Array-Transistor (VSAT) for Ultra-High-Density and Cost-Effective NANO Flash Memory Devices and SSD (Solid State Drive),” 2009 Symposium on VLSI Technology Digest of Technical Papers, pp. 186-187. |
Kim et al., “Multi-Layered Vertical Gate NANO Flash Overcoming Stacking Limit for Terabit Density Storage”, 2009 VLSI Symposium on VLSI Technology Digest of Technical Papers, Jun. 16-18, 2009, pp. 188-189. |
Krieger, Ju H., “Principle Operation of 3-D Memory Device based on Piezoacousto Properties of Ferroelectric Films”, In Tech, Dec. 2010, pp. 3-16. |
Kwong et al., “Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications”, May 25, 2011, Journal of Nanotechnology, vol. 2012, Article ID 492121, 21 pages. |
Lue et al., “A Highly Scalable 8-Layer 30 Vertical-Gate (VG) TFT NANO Flash Using Junction-Free Buried Channel BE-SONOS Device”, 2010 Symposium on VLSI Technology, Jun. 15-17, 2010, pp. 131-132. |
Ou et al., “Array Architecture for a Nonvolatile 3-Dimensional Cross-Point Memory”, Doctoral Dissertation, Stanford University, Mar. 2010, pp. 1-119. |
Ou et al., “Array Architecture for a Nonvolatile 3-Dimensional Cross-Point Resistance-Change Memory”, IEEE Journal of Solid-State Circuits, vol. 46, No. 9, Sep. 2011. |
Strachan et al., “The switching location of a bipolar memristor: chemical, thermal and structural mapping”, Nanotechnology 22 (2011) 254015, pp. 1-6. |
Yoon et al., Vertical Cross-point Resistance Change Memory for Ultra-High Density Non-volatile Memory Applications, 2009 Symposium on VLSI Technology Digest of Technical Papers, pp. 26-27. |
Zhang et al., “A 3D RRAM Using Stackable 1TXR Memory Cell for High Density Application”, IEEE Xplore, Feb. 5, 2010, pp. 917-920. |
Extended European Search Report dated May 25, 2011, issued in related European Application No. 10182254.2 (5 pages). |
First Office Action dated Jan. 6, 2014, issued in related Chinese Application No. 201210193421.1, with English machine translation (7 pages). |
Notice of Reasons for Refusal dated Feb. 7, 2012, issued in related Japanese Application No. 2007-530487, with English machine translation (6 pages). |
Final Notification of Reasons for Refusal dated Jan. 8, 2013, issued in related Japanese Application No. 2007-530487, with English machine translation (6 pages). |
PCT International Search Report dated May 23, 2006, issued in related International Application No. PCT/US2005/031913 (3 pages). |
PCT Written Opinion dated May 24, 2006, issued in related International Application No. PCT/US2005/031913 (7 pages). |
PCT International Preliminary Report on Patentability dated Aug. 28, 2007, issued in related International Application No. PCT/US2005/031913 (5 pages). |
Non-Final Office Action dated Mar. 7, 2018, issued in related U.S. Appl. No. 15/811,179 (8 pages). |
Non-Final Office Action dated Apr. 5, 2017, issued in related U.S. Appl. No. 15/338,857 (9 pages). |
Non-Final Office Action dated Sep. 14, 2015, issued in related U.S. Appl. No. 14/453,982 (8 pages). |
Notice of Allowance dated Jul. 5, 2016, issued in related U.S. Appl. No. 14/453,982 (10 pages). |
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