by use of artificial ferrimagnets [AFI] only

Industry

CPC
H01F10/3277

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Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3277by use of artificial ferrimagnets [AFI] only

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Logic computing
- Patent number 11,647,679
- Issue date May 9, 2023
- Fudan University
- Jiang Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element and memory device
- Patent number 9,818,464
- Issue date Nov 14, 2017
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction structure having free layer with oblique m...
- Patent number 8,338,004
- Issue date Dec 25, 2012
- Korea Institute of Science and Technology
- Kyung Ho Shin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ferromagnetic preferred grain growth promotion seed layer for amorp...
- Patent number 8,278,123
- Issue date Oct 2, 2012
- Canon Anelva Corporation
- Young-suk Choi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect device and magnetic memory
- Patent number 8,223,533
- Issue date Jul 17, 2012
- Kabushiki Kaisha Toshiba
- Jyunichi Ozeki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory device and memory
- Patent number 8,194,443
- Issue date Jun 5, 2012
- Sony Corporation
- Kazutaka Yamane
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin-torque oscillator, a magnetic sensor and a magnetic recording...
- Patent number 8,174,798
- Issue date May 8, 2012
- Kabushiki Kaisha Toshiba
- Tazumi Nagasawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MTJ sensor including domain stable free layer
- Patent number 8,089,265
- Issue date Jan 3, 2012
- MagIC Technologies, Inc.
- Yimin Guo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic sensing element and method for manufacturing the same
- Patent number 8,009,391
- Issue date Aug 30, 2011
- TDK Corporation
- Kenichi Tanaka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunneling magnetic sensor including platinum layer and method for p...
- Patent number 7,916,436
- Issue date Mar 29, 2011
- TDK Corporation
- Masahiko Ishizone
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance element employing Heusler alloy as magnetic layer
- Patent number 7,760,473
- Issue date Jul 20, 2010
- TDK Corporation
- Yosuke Ide
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ sensor based method to measure an electric current
- Patent number 7,750,620
- Issue date Jul 6, 2010
- MagIC Technologies, Inc.
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic memory device
- Patent number 7,700,982
- Issue date Apr 20, 2010
- Sony Corporation
- Masanori Hosomi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic detecting element having free layer formed of NiFe alloy a...
- Patent number 7,616,410
- Issue date Nov 10, 2009
- TDK Corporation
- Masahiko Ishizone
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic sensing element with improved magnetic sensitivity stabili...
- Patent number 7,567,412
- Issue date Jul 28, 2009
- Alps Electric Co., Ltd.
- Ryo Nakabayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic detecting element with diffusion-preventing layer between...
- Patent number 7,567,413
- Issue date Jul 28, 2009
- TDK Corporation
- Yosuke Ide
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ sensor including domain stable free layer
- Patent number 7,483,295
- Issue date Jan 27, 2009
- Mag IC Technologies, Inc.
- Yimin Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic detector including antiferromagnetic layer, amorphous barr...
- Patent number 7,443,635
- Issue date Oct 28, 2008
- Alps Electric Co., Ltd.
- Kenichi Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
CPP-type giant manetoresistance effect element and magnetic compone...
- Patent number 7,385,790
- Issue date Jun 10, 2008
- Japan Science and Technology Agency
- Kouichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic sensing element containing half-metallic alloy
- Patent number 7,336,451
- Issue date Feb 26, 2008
- Alps Electric Co., Ltd.
- Masamichi Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic memory device
- Patent number 7,315,053
- Issue date Jan 1, 2008
- Sony Corporation
- Masanori Hosomi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic sensing element comprising a pinned magnetic layer, a free...
- Patent number 7,312,960
- Issue date Dec 25, 2007
- Alps Electric Co., Ltd.
- Kazumi Matsuzaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic detecting element having pinned magnetic layers disposed o...
- Patent number 7,229,706
- Issue date Jun 12, 2007
- Alps Electric Co., Ltd.
- Naoya Hasegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Stability-enhancing underlayer for exchange-coupled magnetic struct...
- Patent number 7,116,532
- Issue date Oct 3, 2006
- Hitachi Global Storage Technologies Netherlands B.V.
- Matthew Joseph Carey
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic memory device
- Patent number 7,034,348
- Issue date Apr 25, 2006
- Sony Corporation
- Kazuhiro Ohba
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic memory device
- Patent number 6,999,288
- Issue date Feb 14, 2006
- Sony Corporation
- Takeyuki Sone
- G11 - INFORMATION STORAGE
Information Patent Grant
Exchange-coupled magnetoresistive sensor with a coercive ferrite la...
- Patent number 6,992,866
- Issue date Jan 31, 2006
- Hitachi Global Storage Technologies Netherlands B.V.
- Matthew Joseph Carey
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and magnetic memory device
- Patent number 6,992,868
- Issue date Jan 31, 2006
- Sony Corporation
- Takeyuki Sone
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-valve type magnetoresistive sensor and method of manufacturing...
- Patent number 6,913,836
- Issue date Jul 5, 2005
- Alps Electric Co., Ltd.
- Naoya Hasegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive device and magnetic memory device
- Patent number 6,879,473
- Issue date Apr 12, 2005
- Sony Corporation
- Takeyuki Sone
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SUPERPARAMAGNETIC TUNNEL JUNCTION ELEMENT AND COMPUTING SYSTEM
- Publication number 20240212907
- Publication date Jun 27, 2024
- TOHOKU UNIVERSITY
- Keito KOBAYASHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LOGIC COMPUTING
- Publication number 20210367141
- Publication date Nov 25, 2021
- Fudan University
- Jiang XIAO
- G11 - INFORMATION STORAGE
Information Patent Application
FERROMAGNETIC PREFERRED GRAIN GROWTH PROMOTION SEED LAYER FOR AMORP...
- Publication number 20110318848
- Publication date Dec 29, 2011
- Canon ANELVA Corporation
- Young-suk Choi
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20110254114
- Publication date Oct 20, 2011
- Makoto NAGAMINE
- G01 - MEASURING TESTING
Information Patent Application
MEMORY DEVICE AND MEMORY
- Publication number 20100314673
- Publication date Dec 16, 2010
- SONY CORPORATION
- Kazutaka Yamane
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING FREE LAYER WITH OBLIQUE M...
- Publication number 20100109111
- Publication date May 6, 2010
- Kyung Ho SHIN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY
- Publication number 20100080050
- Publication date Apr 1, 2010
- Kabushiki Kaisha Toshiba
- Jyunichi OZEKI
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TORQUE OSCILLATOR, A MAGNETIC SENSOR AND A MAGNETIC RECORDING...
- Publication number 20100079919
- Publication date Apr 1, 2010
- Kabushiki Kaisha Toshiba
- Tazumi Nagasawa
- G01 - MEASURING TESTING
Information Patent Application
MTJ sensor based method to measure an electric current
- Publication number 20090201018
- Publication date Aug 13, 2009
- MagIC Technologies, Inc.
- Yimin Guo
- G01 - MEASURING TESTING
Information Patent Application
MTJ sensor including domain stable free layer
- Publication number 20090184704
- Publication date Jul 23, 2009
- MagIC Technologies, Inc.
- Yimin Guo
- G01 - MEASURING TESTING
Information Patent Application
Tunneling magnetic sensor including platinum layer and method for p...
- Publication number 20080291586
- Publication date Nov 27, 2008
- Alps Electric Co., Ltd.
- Masahiko Ishizone
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20080285180
- Publication date Nov 20, 2008
- Kenichi Tanaka
- G01 - MEASURING TESTING
Information Patent Application
MTJ sensor including domain stable free layer
- Publication number 20080258721
- Publication date Oct 23, 2008
- MagIC Technologies, Inc.
- Yimin Guo
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20080253039
- Publication date Oct 16, 2008
- Makoto NAGAMINE
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20080006860
- Publication date Jan 10, 2008
- SONY CORPORATION
- Masanori Hosomi
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC HEAD, MAGNETIC RECORDING...
- Publication number 20070230067
- Publication date Oct 4, 2007
- FUJITSU LIMITED
- Arata Jogo
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTANCE ELEMENT EMPLOYING HEUSLER ALLOY AS MAGNETIC LAYER
- Publication number 20070201169
- Publication date Aug 30, 2007
- Alps Electric Co., Ltd.
- Yosuke Ide
- G01 - MEASURING TESTING
Information Patent Application
TUNNEL TYPE MAGNETIC DETECTION ELEMENT IN WHICH FE COMPOSITION OF T...
- Publication number 20070171580
- Publication date Jul 26, 2007
- Alps Electric Co., Ltd.
- Kazumasa Nishimura
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC SENSING ELEMENT INCLUDING FREE LAYER CONTAINING HALF-METAL
- Publication number 20060285258
- Publication date Dec 21, 2006
- Kazumasa Nishimura
- G01 - MEASURING TESTING
Information Patent Application
Magnetic detecting element with diffusion-preventing layer between...
- Publication number 20060227467
- Publication date Oct 12, 2006
- Alps Electric Co., Ltd.
- Yosuke Ide
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic detecting element having free layer formed of NiFe alloy a...
- Publication number 20060198060
- Publication date Sep 7, 2006
- Alps Electric Co., Ltd.
- Masahiko Ishizone
- G01 - MEASURING TESTING
Information Patent Application
Cpp-type giant manetoresistance effect element and magnetic compone...
- Publication number 20060139817
- Publication date Jun 29, 2006
- Kouichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetic sensing element with improved magnetic sensitivity stabili...
- Publication number 20060110625
- Publication date May 25, 2006
- Alps Electric Co., Ltd.
- Ryo Nakabayashi
- G01 - MEASURING TESTING
Information Patent Application
Magnetic detector including antiferromagnetic layer, amorphous barr...
- Publication number 20060077597
- Publication date Apr 13, 2006
- Alps Electric Co., Ltd.
- Kenichi Tanaka
- G01 - MEASURING TESTING
Information Patent Application
Magnetic sensing element pinning magnetization of pinned magnetic l...
- Publication number 20050207072
- Publication date Sep 22, 2005
- Alps Electric Co., Ltd.
- Kazumi Matsuzaka
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive effect element and magnetic memory device
- Publication number 20050162904
- Publication date Jul 28, 2005
- Sony Corporation
- Takeyuki Sone
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive effect element and magnetic memory device
- Publication number 20050162905
- Publication date Jul 28, 2005
- Sony Corporation
- Takeyuki Sone
- G01 - MEASURING TESTING
Information Patent Application
Stability-enhancing underlayer for exchange-coupled magnetic struct...
- Publication number 20050122636
- Publication date Jun 9, 2005
- Matthew Joseph Carey
- G01 - MEASURING TESTING
Information Patent Application
Stability-enhancing underlayer for exchange-coupled magnetic struct...
- Publication number 20050036244
- Publication date Feb 17, 2005
- Matthew Joseph Carey
- G01 - MEASURING TESTING
Information Patent Application
Stability-enhancing underlayer for exchange-coupled magnetic struct...
- Publication number 20050030674
- Publication date Feb 10, 2005
- Matthew Joseph Carey
- G01 - MEASURING TESTING

by use of artificial ferrimagnets [AFI] only

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Logic computing

Magnetic memory element and memory device

Magnetic tunnel junction structure having free layer with oblique m...

Ferromagnetic preferred grain growth promotion seed layer for amorp...

Magnetoresistive effect device and magnetic memory

Memory device and memory

Spin-torque oscillator, a magnetic sensor and a magnetic recording...

MTJ sensor including domain stable free layer

Magnetic sensing element and method for manufacturing the same

Tunneling magnetic sensor including platinum layer and method for p...

Magnetoresistance element employing Heusler alloy as magnetic layer

MTJ sensor based method to measure an electric current

Magnetoresistive effect element and magnetic memory device

Magnetic detecting element having free layer formed of NiFe alloy a...

Magnetic sensing element with improved magnetic sensitivity stabili...

Magnetic detecting element with diffusion-preventing layer between...

MTJ sensor including domain stable free layer

Magnetic detector including antiferromagnetic layer, amorphous barr...

CPP-type giant manetoresistance effect element and magnetic compone...

Magnetic sensing element containing half-metallic alloy

Magnetoresistive effect element and magnetic memory device

Magnetic sensing element comprising a pinned magnetic layer, a free...

Magnetic detecting element having pinned magnetic layers disposed o...

Stability-enhancing underlayer for exchange-coupled magnetic struct...

Magnetoresistive effect element and magnetic memory device

Magnetoresistive effect element and magnetic memory device

Exchange-coupled magnetoresistive sensor with a coercive ferrite la...

Magnetoresistive effect element and magnetic memory device

Spin-valve type magnetoresistive sensor and method of manufacturing...

Magnetoresistive device and magnetic memory device

Patents Applicationslast 30 patents

SUPERPARAMAGNETIC TUNNEL JUNCTION ELEMENT AND COMPUTING SYSTEM

LOGIC COMPUTING

FERROMAGNETIC PREFERRED GRAIN GROWTH PROMOTION SEED LAYER FOR AMORP...

MAGNETORESISTIVE EFFECT ELEMENT

MEMORY DEVICE AND MEMORY

MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING FREE LAYER WITH OBLIQUE M...

MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY

SPIN-TORQUE OSCILLATOR, A MAGNETIC SENSOR AND A MAGNETIC RECORDING...

MTJ sensor based method to measure an electric current

MTJ sensor including domain stable free layer

Tunneling magnetic sensor including platinum layer and method for p...

MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

MTJ sensor including domain stable free layer

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC HEAD, MAGNETIC RECORDING...

MAGNETORESISTANCE ELEMENT EMPLOYING HEUSLER ALLOY AS MAGNETIC LAYER

TUNNEL TYPE MAGNETIC DETECTION ELEMENT IN WHICH FE COMPOSITION OF T...

MAGNETIC SENSING ELEMENT INCLUDING FREE LAYER CONTAINING HALF-METAL

Magnetic detecting element with diffusion-preventing layer between...

Magnetic detecting element having free layer formed of NiFe alloy a...

Cpp-type giant manetoresistance effect element and magnetic compone...

Magnetic sensing element with improved magnetic sensitivity stabili...

Magnetic detector including antiferromagnetic layer, amorphous barr...

Magnetic sensing element pinning magnetization of pinned magnetic l...

Magnetoresistive effect element and magnetic memory device

Magnetoresistive effect element and magnetic memory device

Stability-enhancing underlayer for exchange-coupled magnetic struct...

Stability-enhancing underlayer for exchange-coupled magnetic struct...

Stability-enhancing underlayer for exchange-coupled magnetic struct...