Carbides

Industry

CPC
C30B29/36

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/36Carbides

Industries

Patents Grantslast 30 patents

Information Patent Grant
SiC wafer and manufacturing method for SiC wafer
- Patent number 12,139,813
- Issue date Nov 12, 2024
- Toyota Tsusho Corporation
- Masatake Nagaya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Joined body, laser oscillator, laser amplifier, and joined body man...
- Patent number 12,142,888
- Issue date Nov 12, 2024
- National Institute for Materials Science
- Hiroaki Furuse
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal and semiconductor apparatus
- Patent number 12,129,571
- Issue date Oct 29, 2024
- Mitsubishi Electric Corporation
- Hiroyuki Kinoshita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth method and wafer
- Patent number 12,123,105
- Issue date Oct 22, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and silicon carbide semiconduct...
- Patent number 12,125,881
- Issue date Oct 22, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large dimension silicon carbide single crystalline materials with r...
- Patent number 12,125,701
- Issue date Oct 22, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,116,696
- Issue date Oct 15, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki Takaoka
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Manufacturing method of semi-insulating single-crystal silicon carb...
- Patent number 12,098,477
- Issue date Sep 24, 2024
- TAISIC MATERIALS CORP.
- Dai-Liang Ma
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Thermal conductivity estimation method, thermal conductivity estima...
- Patent number 12,099,026
- Issue date Sep 24, 2024
- Sumco Corporation
- Ryusuke Yokoyama
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for producing a SiC substrate via an etching step, growth st...
- Patent number 12,098,476
- Issue date Sep 24, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,091,772
- Issue date Sep 17, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
8-inch n-type SiC single crystal substrate
- Patent number 12,084,789
- Issue date Sep 10, 2024
- Resonac Corporation
- Tomohiro Shonai
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
- Patent number 12,071,706
- Issue date Aug 27, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,071,708
- Issue date Aug 27, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for manufacturing silicon carbide single crystal ingot and...
- Patent number 12,071,709
- Issue date Aug 27, 2024
- Denso Corporation
- Isaho Kamata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a SiC substrate by simultaneously forming...
- Patent number 12,065,758
- Issue date Aug 20, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vanadium-compensated 4H and 6H single crystals of optical grade, an...
- Patent number 12,060,650
- Issue date Aug 13, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide crystal manufacturing apparatus, control device of...
- Patent number 12,043,918
- Issue date Jul 23, 2024
- Denso Corporation
- Daisuke Uematsu
- G05 - CONTROLLING REGULATING
Information Patent Grant
Silicon carbide wafer and method of manufacturing same
- Patent number 12,037,704
- Issue date Jul 16, 2024
- Senic Inc.
- Myung Ok Kyun
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,031,233
- Issue date Jul 9, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate and me...
- Patent number 12,020,927
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC semiconductor substrate, method for manufacturing same, and dev...
- Patent number 12,020,928
- Issue date Jun 25, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 12,020,924
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 12,014,924
- Issue date Jun 18, 2024
- Sumitomo Electric Industries, Ltd.
- Kenji Kanbara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxial growth device
- Patent number 12,009,206
- Issue date Jun 11, 2024
- National University Corporation Nagoya University
- Shugo Nitta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing an aluminum doped silicon carbide crystal by p...
- Patent number 12,006,591
- Issue date Jun 11, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide magnetometer and associated material formation methods
- Patent number 11,993,864
- Issue date May 28, 2024
- The Johns Hopkins University
- John B. Abraham
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNE...
- Publication number 20240376633
- Publication date Nov 14, 2024
- PVA TePla AG
- Michael SCHÖLER
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SINGLE-CRYSTAL SILICON CARBIDE WAFER, SINGLE-CRYSTAL SILICON CARBID...
- Publication number 20240368806
- Publication date Nov 7, 2024
- Central Glass Company, Limited
- Tomonori UMEZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE MATERIAL
- Publication number 20240359991
- Publication date Oct 31, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Batch Mode Silicon Carbide Epitaxial Reactor
- Publication number 20240360589
- Publication date Oct 31, 2024
- ThinSiC Inc.
- Tirunelveli Subramaniam Ravi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...
- Publication number 20240352617
- Publication date Oct 24, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya ZWIEBACK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL SILICON CARBIDE WAFER, AND SINGLE-CRYSTAL SILICON CA...
- Publication number 20240344237
- Publication date Oct 17, 2024
- Central Glass Company, Limited
- Tomonori UMEZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
- Publication number 20240337044
- Publication date Oct 10, 2024
- DENSO CORPORATION
- NOBUYUKI OYA
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...
- Publication number 20240328032
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Makoto TAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER
- Publication number 20240332365
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC CRYSTAL GROWTH APPARATUS AND METHOD
- Publication number 20240328031
- Publication date Oct 3, 2024
- SK Siltron CSS, LLC
- Andrey SOUKHOJAK
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...
- Publication number 20240332011
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...
- Publication number 20240332366
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Björn MAGNUSSON LINDGREN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...
- Publication number 20240318352
- Publication date Sep 26, 2024
- SiCrystal GmbH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SUBSTRATE
- Publication number 20240309555
- Publication date Sep 19, 2024
- Sumitomo Electric Industries, Ltd.
- Shunsaku UETA
- C30 - CRYSTAL GROWTH
Information Patent Application
Sublimation System And Method Of Growing At Least One Single Crystal
- Publication number 20240309546
- Publication date Sep 19, 2024
- SiCrystal GmbH
- Philipp SCHUH
- C30 - CRYSTAL GROWTH
Information Patent Application
Sublimation System and Method of Growing at Least One Single Crysta...
- Publication number 20240309545
- Publication date Sep 19, 2024
- SiCrystal GmbH
- Ralf MÜLLER
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
- Publication number 20240304676
- Publication date Sep 12, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20240301585
- Publication date Sep 12, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE-CRYSTAL GROWTH APPARATUS
- Publication number 20240295047
- Publication date Sep 5, 2024
- SEC CARBON, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...
- Publication number 20240287705
- Publication date Aug 29, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FABRICATING SILICON CARBIDE INGOT
- Publication number 20240271322
- Publication date Aug 15, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...
- Publication number 20240271321
- Publication date Aug 15, 2024
- SOITEC
- Frédéric Allibert
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20240274671
- Publication date Aug 15, 2024
- Resonac Corporation
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...
- Publication number 20240263346
- Publication date Aug 8, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL EXPANSION APPARATUS, SILICON CARBIDE CRYSTA...
- Publication number 20240263345
- Publication date Aug 8, 2024
- Winsheng Material Technology (WMT) Co., Ltd.
- Chi-Hang Hung
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...
- Publication number 20240263347
- Publication date Aug 8, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE
- Publication number 20240254656
- Publication date Aug 1, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki TAKAOKA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR PRODUCING A SILICON CARBIDE SUBSTRATE
- Publication number 20240240357
- Publication date Jul 18, 2024
- Hitachi Energy Ltd
- Giovanni ALFIERI
- C30 - CRYSTAL GROWTH

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC wafer and manufacturing method for SiC wafer

Joined body, laser oscillator, laser amplifier, and joined body man...

Silicon carbide single crystal and semiconductor apparatus

Crystal growth method and wafer

Silicon carbide epitaxial substrate and silicon carbide semiconduct...

Large dimension silicon carbide single crystalline materials with r...

Silicon carbide substrate

Silicon carbide substrate

Manufacturing method of semi-insulating single-crystal silicon carb...

Thermal conductivity estimation method, thermal conductivity estima...

Method for producing a SiC substrate via an etching step, growth st...

Silicon carbide substrate

8-inch n-type SiC single crystal substrate

SiC composite substrate including biaxially oreinted SiC layer and...

Process for producing a monoocrystalline layer of AlN material by t...

Silicon carbide substrate

Methods for manufacturing silicon carbide single crystal ingot and...

Method for manufacturing a SiC substrate by simultaneously forming...

Vanadium-compensated 4H and 6H single crystals of optical grade, an...

Large diameter silicon carbide wafers

Silicon carbide crystal manufacturing apparatus, control device of...

Silicon carbide wafer and method of manufacturing same

Silicon carbide substrate

Method for manufacturing silicon carbide epitaxial substrate and me...

SiC semiconductor substrate, method for manufacturing same, and dev...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Silicon carbide epitaxial substrate and method for manufacturing si...

Vapor phase epitaxial growth device

Method for preparing an aluminum doped silicon carbide crystal by p...

Silicon carbide magnetometer and associated material formation methods

Patents Applicationslast 30 patents

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

PVT-METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS IN A SAFE MANNE...

SINGLE-CRYSTAL SILICON CARBIDE WAFER, SINGLE-CRYSTAL SILICON CARBID...

SILICON CARBIDE MATERIAL

Batch Mode Silicon Carbide Epitaxial Reactor

VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...

LARGE DIAMETER SILICON CARBIDE WAFERS

SINGLE-CRYSTAL SILICON CARBIDE WAFER, AND SINGLE-CRYSTAL SILICON CA...

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...

SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDU...

LOW RESISTIVITY POLYCRYSTALLINE BASED SUBSTRATE OR WAFER

SiC CRYSTAL GROWTH APPARATUS AND METHOD

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURI...

POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE WITH DENSITY GRADIENT AND...

METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...

SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SUBSTRATE

Sublimation System And Method Of Growing At Least One Single Crystal

Sublimation System and Method of Growing at Least One Single Crysta...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...

SILICON CARBIDE EPITAXIAL SUBSTRATE

SIC SINGLE-CRYSTAL GROWTH APPARATUS

METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...

METHOD OF FABRICATING SILICON CARBIDE INGOT

METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN FI...

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...

SILICON CARBIDE CRYSTAL EXPANSION APPARATUS, SILICON CARBIDE CRYSTA...

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...

SILICON CARBIDE SUBSTRATE

METHOD FOR PRODUCING A SILICON CARBIDE SUBSTRATE