Carbon or carbides

Industry

CPC
H01L45/149

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/149Carbon or carbides

Industries

Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile memory device and operating method of the same
- Patent number 11,600,774
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching memory including resistive switching layer fabr...
- Patent number 11,522,134
- Issue date Dec 6, 2022
- Industry-University Cooperation Foundation Hanyang University
- Jin Pyo Hong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electronic devices comprising metal oxide materials and related met...
- Patent number 11,444,243
- Issue date Sep 13, 2022
- Micron Technology, Inc.
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon-based volatile and non-volatile memristors
- Patent number 11,393,976
- Issue date Jul 19, 2022
- Massachusetts Institute of Technology
- Pablo Jarillo-Herrero
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrostatic discharge protection devices using carbon-based diodes
- Patent number 11,387,277
- Issue date Jul 12, 2022
- Nantero, Inc.
- Claude L. Bertin
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory devices using a carbon-based conductor line and me...
- Patent number 11,349,069
- Issue date May 31, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combinational resistive change elements
- Patent number 11,295,810
- Issue date Apr 5, 2022
- Nantero, Inc.
- Jia Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,271,152
- Issue date Mar 8, 2022
- Kioxia Corporation
- Kenichi Murooka
- G11 - INFORMATION STORAGE
Information Patent Grant
Nano memory device
- Patent number 11,145,815
- Issue date Oct 12, 2021
- South Dakota Board of Regents
- Charles Tolle
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Microswitch and electronic device in which same is used
- Patent number 11,127,898
- Issue date Sep 21, 2021
- Nippon Steel Corporation
- Hiroshi Kajiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage device
- Patent number 11,081,525
- Issue date Aug 3, 2021
- TOSHIBA MEMORY CORPORATION
- Takeshi Iwasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,069,745
- Issue date Jul 20, 2021
- TOSHIBA MEMORY CORPORATION
- Kenichi Murooka
- G11 - INFORMATION STORAGE
Information Patent Grant
Ion-based nanoelectric memory
- Patent number 11,056,647
- Issue date Jul 6, 2021
- The Aerospace Corporation
- Adam W. Bushmaker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,024,671
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable current for correlated electron switch
- Patent number 10,958,266
- Issue date Mar 23, 2021
- ARM Limited
- Bal S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory structures and devices
- Patent number 10,892,406
- Issue date Jan 12, 2021
- Intel Corporation
- Stephen Russell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and memory unit
- Patent number 10,879,312
- Issue date Dec 29, 2020
- Sony Corporation
- Hiroaki Sei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Front to back resistive random-access memory cells
- Patent number 10,855,286
- Issue date Dec 1, 2020
- Microsemi SoC Corp.
- Jonathan Greene
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Resistive random-access memory with protected switching layer
- Patent number 10,756,266
- Issue date Aug 25, 2020
- WWRAM DEVICES, INC.
- Shih-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making sealed resistive change elements
- Patent number 10,741,761
- Issue date Aug 11, 2020
- Nantero, Inc.
- C. Rinn Cleavelin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance change memory device having amorphous carbon structure a...
- Patent number 10,720,582
- Issue date Jul 21, 2020
- SK hynix Inc.
- Sanghun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear resistive change memory cells and arrays
- Patent number 10,700,131
- Issue date Jun 30, 2020
- Nantero, Inc.
- Claude L. Bertin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with laterally offset BEVA/TEVA
- Patent number 10,700,275
- Issue date Jun 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 10,693,064
- Issue date Jun 23, 2020
- TOSHIBA MEMORY CORPORATION
- Kenichi Murooka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including semiconductor memory having different d...
- Patent number 10,649,689
- Issue date May 12, 2020
- SK Hynix Inc.
- Nam-Kyun Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive random access memory device
- Patent number 10,651,237
- Issue date May 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 10,600,845
- Issue date Mar 24, 2020
- TOSHIBA MEMORY CORPORATION
- Kenichi Murooka
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional phase change memory device having a laterally con...
- Patent number 10,580,976
- Issue date Mar 3, 2020
- SanDisk Technologies LLC
- Yuji Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system with memory support and method of manufac...
- Patent number 10,580,828
- Issue date Mar 3, 2020
- Synopsys, Inc.
- Chung-Heng Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Variable resistance memory devices and methods of manufacturing the...
- Patent number 10,546,999
- Issue date Jan 28, 2020
- Samsung Electronics Co., Ltd.
- Masayuki Terai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER
- Publication number 20240090352
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230413699
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Hye Jung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON
- Publication number 20230363297
- Publication date Nov 9, 2023
- Intel Corporation
- Luca Fumagalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC-Doped Ge1Sb2Te4 Phase-Change Materials for 3D Crosspoint Memory
- Publication number 20230337559
- Publication date Oct 19, 2023
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE HAVING RESISTANCE CHANGE PROPERTY
- Publication number 20230309427
- Publication date Sep 28, 2023
- SK HYNIX INC.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL
- Publication number 20230129619
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-HEALING MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230072894
- Publication date Mar 9, 2023
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Tae Whan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNAPTIC DEVICE, RESERVOIR COMPUTING DEVICE INCLUDING THE SYNAPTIC...
- Publication number 20230030949
- Publication date Feb 2, 2023
- Korea Advanced Institute of Science and Technology
- Heejun YANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ETCH-RESISTANT DOPED SCAVENGING CARBIDE ELECTRODES
- Publication number 20220344586
- Publication date Oct 27, 2022
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220328762
- Publication date Oct 13, 2022
- SK HYNIX INC.
- Ji Sun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D AMORPHOUS CARBON FILM ASSEMBLED FROM GRAPHENE QUANTUM DOTS
- Publication number 20220306476
- Publication date Sep 29, 2022
- THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- Qing Cao
- B82 - NANO-TECHNOLOGY
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20220310916
- Publication date Sep 29, 2022
- SK HYNIX INC.
- Byung Jick CHO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE MEMORY DEVICES USING A CARBON-BASED CONDUCTOR LINE AND ME...
- Publication number 20220285612
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220209110
- Publication date Jun 30, 2022
- SK HYNIX INC.
- Deok Lae AHN
- G11 - INFORMATION STORAGE
Information Patent Application
PROJECTED MEMORY DEVICE WITH REDUCED MINIMUM CONDUCTANCE STATE
- Publication number 20220165948
- Publication date May 26, 2022
- International Business Machines Corporation
- Benedikt Kersting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20220149276
- Publication date May 12, 2022
- KIOXIA Corporation
- Kenichi MUROOKA
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Change Element Arrays
- Publication number 20220148652
- Publication date May 12, 2022
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE AND ME...
- Publication number 20220140238
- Publication date May 5, 2022
- SK hynix Inc.
- Jae Hyun HAN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20220085291
- Publication date Mar 17, 2022
- KIOXIA Corporation
- Hiroyuki ODE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO MEMORY DEVICE
- Publication number 20210408376
- Publication date Dec 30, 2021
- SOUTH DAKOTA BOARD OF REGENTS
- Charles Tolle
- B82 - NANO-TECHNOLOGY
Information Patent Application
PHASE CHANGE MEMORY WITH A CARBON BUFFER LAYER
- Publication number 20210249600
- Publication date Aug 12, 2021
- Macronix International Co., Ltd.
- Wei-Chih CHIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon-Based Volatile and Non-Volatile Memristors
- Publication number 20210217952
- Publication date Jul 15, 2021
- Pablo Jarillo-Herrero
- G11 - INFORMATION STORAGE
Information Patent Application
MICROSWITCH AND ELECTRONIC DEVICE IN WHICH SAME IS USED
- Publication number 20210202836
- Publication date Jul 1, 2021
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Hiroshi KAJIRO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICES USING A CARBON-BASED CONDUCTOR LINE AND ME...
- Publication number 20210184111
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELEMENTARY CELL COMPRISING A RESISTIVE MEMORY AND ASSOCIATED METHOD...
- Publication number 20210184117
- Publication date Jun 17, 2021
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Anthonin VERDY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY INCLUDING RESISTIVE SWITCHING LAYER FABR...
- Publication number 20210167286
- Publication date Jun 3, 2021
- IUCF-HYU (Industry-Univesity Cooperation Foundation Hanyang University)
- Jin Pyo HONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20210151678
- Publication date May 20, 2021
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FABRICATE RESISTIVE MEMORY WITH VERTICAL PR...
- Publication number 20210135108
- Publication date May 6, 2021
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED MET...
- Publication number 20210126193
- Publication date Apr 29, 2021
- Micron Technology, Inc.
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic Discharge Protection Devices Using Carbon-Based Diodes
- Publication number 20200403036
- Publication date Dec 24, 2020
- Nantero, Inc.
- Claude L. BERTIN
- G11 - INFORMATION STORAGE

Carbon or carbides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nonvolatile memory device and operating method of the same

Resistive switching memory including resistive switching layer fabr...

Electronic devices comprising metal oxide materials and related met...

Carbon-based volatile and non-volatile memristors

Electrostatic discharge protection devices using carbon-based diodes

Resistive memory devices using a carbon-based conductor line and me...

Combinational resistive change elements

Semiconductor memory device

Nano memory device

Microswitch and electronic device in which same is used

Storage device

Memory device

Ion-based nanoelectric memory

Resistive random access memory device

Programmable current for correlated electron switch

Phase change memory structures and devices

Memory device and memory unit

Front to back resistive random-access memory cells

Resistive random-access memory with protected switching layer

Methods of making sealed resistive change elements

Resistance change memory device having amorphous carbon structure a...

Non-linear resistive change memory cells and arrays

RRAM cell structure with laterally offset BEVA/TEVA

Semiconductor memory device

Electronic device including semiconductor memory having different d...

Resistive random access memory device

Memory device

Three-dimensional phase change memory device having a laterally con...

Integrated circuit system with memory support and method of manufac...

Variable resistance memory devices and methods of manufacturing the...

Patents Applicationslast 30 patents

RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

TECHNOLOGIES FOR SEMICONDUCTOR DEVICES INCLUDING AMORPHOUS SILICON

SiC-Doped Ge1Sb2Te4 Phase-Change Materials for 3D Crosspoint Memory

ELECTRONIC DEVICE HAVING RESISTANCE CHANGE PROPERTY

CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL

SELF-HEALING MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

SYNAPTIC DEVICE, RESERVOIR COMPUTING DEVICE INCLUDING THE SYNAPTIC...

ETCH-RESISTANT DOPED SCAVENGING CARBIDE ELECTRODES

ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

2D AMORPHOUS CARBON FILM ASSEMBLED FROM GRAPHENE QUANTUM DOTS

ELECTRONIC DEVICE

RESISTIVE MEMORY DEVICES USING A CARBON-BASED CONDUCTOR LINE AND ME...

ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

PROJECTED MEMORY DEVICE WITH REDUCED MINIMUM CONDUCTANCE STATE

SEMICONDUCTOR MEMORY DEVICE

Resistive Change Element Arrays

SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE AND ME...

SEMICONDUCTOR STORAGE DEVICE

NANO MEMORY DEVICE

PHASE CHANGE MEMORY WITH A CARBON BUFFER LAYER

Carbon-Based Volatile and Non-Volatile Memristors

MICROSWITCH AND ELECTRONIC DEVICE IN WHICH SAME IS USED

RESISTIVE MEMORY DEVICES USING A CARBON-BASED CONDUCTOR LINE AND ME...

ELEMENTARY CELL COMPRISING A RESISTIVE MEMORY AND ASSOCIATED METHOD...

RESISTIVE SWITCHING MEMORY INCLUDING RESISTIVE SWITCHING LAYER FABR...

NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME

STRUCTURE AND METHOD TO FABRICATE RESISTIVE MEMORY WITH VERTICAL PR...

ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED MET...

Electrostatic Discharge Protection Devices Using Carbon-Based Diodes