Cathode regions of thyristors

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H01L29/0839

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0839Cathode regions of thyristors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device, semiconductor package, semiconductor module,...
- Patent number 12,025,507
- Issue date Jul 2, 2024
- Fuji Electric Co., Ltd.
- Kenichiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SCR having selective well contacts
- Patent number 12,027,612
- Issue date Jul 2, 2024
- Texas Instruments Incorporated
- Karmel Kranthi Nagothu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate-commutated thyristor (IGCT)
- Patent number 11,824,091
- Issue date Nov 21, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,784,220
- Issue date Oct 10, 2023
- Kabushiki Kaisha Toshiba
- Hideaki Sai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS(metal oxide silicon) controlled thyristor device
- Patent number 11,784,247
- Issue date Oct 10, 2023
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical overstress protection with low leakage current for high...
- Patent number 11,784,488
- Issue date Oct 10, 2023
- Analog Devices International Unlimited Company
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit semiconductor component and method for operating it
- Patent number 11,664,445
- Issue date May 30, 2023
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Mario Schenk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical overstress protection with low leakage current for high...
- Patent number 11,387,648
- Issue date Jul 12, 2022
- Analog Devices International Unlimited Company
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor package, semiconductor module,...
- Patent number 11,371,891
- Issue date Jun 28, 2022
- Fuji Electric Co., Ltd.
- Kenichiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical overstress protection for electronic systems subject to...
- Patent number 11,362,203
- Issue date Jun 14, 2022
- Analog Devices, Inc.
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thyristor
- Patent number 11,362,204
- Issue date Jun 14, 2022
- STMicroelectronics (Tours) SAS
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage tolerant circuit architecture for applications subject...
- Patent number 11,342,323
- Issue date May 24, 2022
- Analog Devices, Inc.
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bypass thyristor device with gas expansion cavity within a contact...
- Patent number 11,139,219
- Issue date Oct 5, 2021
- ABB Schweiz AG
- Tobias Wikström
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional phase controlled thyristor (BiPCT)—a new semiconducto...
- Patent number 11,056,582
- Issue date Jul 6, 2021
- ABB Power Grids Switzerland AG
- Jan Vobecky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power electronic arrangement
- Patent number 10,950,690
- Issue date Mar 16, 2021
- Infineon Technologies AG
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor package, semiconductor module,...
- Patent number 10,794,773
- Issue date Oct 6, 2020
- Fuji Electric Co., Ltd.
- Kenichiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-way switch with a gate referenced to the main back side electrode
- Patent number 10,707,337
- Issue date Jul 7, 2020
- STMicroelectronics (Tours) SAS
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flat gate commutated thyristor
- Patent number 10,461,157
- Issue date Oct 29, 2019
- ABB Schweiz AG
- Martin Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection device
- Patent number 10,361,187
- Issue date Jul 23, 2019
- Powerchip Semiconductor Manufacturing Corporation
- Ruei-Siang Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase control thyristor
- Patent number 10,355,117
- Issue date Jul 16, 2019
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-controlled rectifiers having a cathode coupled by a contact...
- Patent number 10,347,622
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- You Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the semiconductor...
- Patent number 10,326,010
- Issue date Jun 18, 2019
- Shindengen Electric Manufacturing Co., Ltd.
- Yukihiro Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thyristor memory with minority carrier lifetime reduction
- Patent number 10,256,241
- Issue date Apr 9, 2019
- TC Lab, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Insulated gate turn-off device with hole injector for faster turn off
- Patent number 10,224,404
- Issue date Mar 5, 2019
- Pakal Technologies, Inc.
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number RE47198
- Issue date Jan 8, 2019
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
Information Patent Grant
Thyristor with improved plasma spreading
- Patent number 10,170,557
- Issue date Jan 1, 2019
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon controlled rectifiers (SCR), methods of manufacture and des...
- Patent number 10,163,892
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Michel J. Abou-Khalil
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Embedded PMOS-trigger silicon controlled rectifier (SCR) with suppr...
- Patent number 10,134,722
- Issue date Nov 20, 2018
- Hong Kong Applied Science and Technology Research Institute Company Limited
- Chun-Kit Yam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate turn-off device with turn-off transistor
- Patent number RE47072
- Issue date Oct 2, 2018
- Pakal Technologies, LLC
- Vladimir Rodov
Information Patent Grant
Bipolar non-punch-through power semiconductor device
- Patent number 10,069,000
- Issue date Sep 4, 2018
- ABB Schweiz AG
- Virgiliu Botan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THYRISTOR BASED ON CHARGE PLASMA AND CROSS-POINT MEMORY ARRAY INCLU...
- Publication number 20240322023
- Publication date Sep 26, 2024
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Sang Dong YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC-IGBT
- Publication number 20240313095
- Publication date Sep 19, 2024
- Mitsubishi Electric Corporation
- Shinya SONEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240063265
- Publication date Feb 22, 2024
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Markus Droldner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULE COMPRISING A SWITCHABLE BYPASS DEVICE
- Publication number 20230411503
- Publication date Dec 21, 2023
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230317818
- Publication date Oct 5, 2023
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Gate-Commutated Thyristor (IGCT)
- Publication number 20230111333
- Publication date Apr 13, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE
- Publication number 20230087416
- Publication date Mar 23, 2023
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Kun Sik PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL OVERSTRESS PROTECTION WITH LOW LEAKAGE CURRENT FOR HIGH...
- Publication number 20220337055
- Publication date Oct 20, 2022
- Analog Devices International Unlimited Company
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, SEMICONDUCTOR MODULE,...
- Publication number 20220307913
- Publication date Sep 29, 2022
- Fuji Electric Co., Ltd.
- Kenichiro SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCR HAVING SELECTIVE WELL CONTACTS
- Publication number 20220223723
- Publication date Jul 14, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Karmel Kranthi Nagothu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220208969
- Publication date Jun 30, 2022
- Kabushiki Kaisha Toshiba
- Hideaki Sai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING IT
- Publication number 20210036136
- Publication date Feb 4, 2021
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Mario SCHENK
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, SEMICONDUCTOR MODULE,...
- Publication number 20210010871
- Publication date Jan 14, 2021
- Fuji Electric Co., Ltd.
- Kenichiro SATO
- G01 - MEASURING TESTING
Information Patent Application
Bidirectional Phase Controlled Thyristor (BiPCT) - A New Semiconduc...
- Publication number 20200411674
- Publication date Dec 31, 2020
- ABB Power Grids Switzerland AG
- Jan Vobecky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TOLERANT CIRCUIT ARCHITECTURE FOR APPLICATIONS SUBJECT...
- Publication number 20200381417
- Publication date Dec 3, 2020
- Analog Devices, Inc.
- Javier A. Salcedo
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
ELECTRICAL OVERSTRESS PROTECTION WITH LOW LEAKAGE CURRENT FOR HIGH...
- Publication number 20200227914
- Publication date Jul 16, 2020
- Analog Devices International Unlimited Company
- Javier A. Salcedo
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
VERTICAL THYRISTOR
- Publication number 20200203516
- Publication date Jun 25, 2020
- STMicroelectronics (Tours) SAS
- Samuel MENARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BYPASS THYRISTOR DEVICE WITH GAS EXPANSION CAVITY WITHIN A CONTACT...
- Publication number 20200144141
- Publication date May 7, 2020
- ABB Schweiz AG
- Tobias Wikström
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, SEMICONDUCTOR MODULE,...
- Publication number 20190301946
- Publication date Oct 3, 2019
- Fuji Electric Co., Ltd.
- Kenichiro SATO
- G01 - MEASURING TESTING
Information Patent Application
4-LAYER DEVICES WITH IMPROVED REVERSE CURRENT ACTION CAPABILITY
- Publication number 20190288096
- Publication date Sep 19, 2019
- Silicon Power Corporation
- Victor A. TEMPLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION DEVICE
- Publication number 20190252369
- Publication date Aug 15, 2019
- MAXCHIP ELECTRONICS CORP.
- Ruei-Siang Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded PMOS-Trigger Silicon Controlled Rectifier (SCR) with Suppr...
- Publication number 20180301445
- Publication date Oct 18, 2018
- Hong Kong Applied Science and Technology Research Institute Company, Limited
- Chun-Kit YAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLAT GATE COMMUTATED THYRISTOR
- Publication number 20180204913
- Publication date Jul 19, 2018
- ABB Schweiz AG
- Martin Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR WITH IMPROVED PLASMA SPREADING
- Publication number 20180090572
- Publication date Mar 29, 2018
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH HOLE INJECTOR FOR FASTER TURN OFF
- Publication number 20180006120
- Publication date Jan 4, 2018
- PAKAL TECHNOLOGIES, LLC
- Hidenori Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION STRUCTURE
- Publication number 20170373053
- Publication date Dec 28, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Rouying Zhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CONTROL THYRISTOR
- Publication number 20170243966
- Publication date Aug 24, 2017
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ZENER DIODE
- Publication number 20160254390
- Publication date Sep 1, 2016
- Toyota Jidosha Kabushiki Kaisha
- Hiroomi EGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160247808
- Publication date Aug 25, 2016
- Toyota Jidosha Kabushiki Kaisha
- Yuki HORIUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20160204240
- Publication date Jul 14, 2016
- ABB TECHNOLOGY AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS

Cathode regions of thyristors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device, semiconductor package, semiconductor module,...

SCR having selective well contacts

Integrated gate-commutated thyristor (IGCT)

Semiconductor device

MOS(metal oxide silicon) controlled thyristor device

Electrical overstress protection with low leakage current for high...

Short-circuit semiconductor component and method for operating it

Electrical overstress protection with low leakage current for high...

Semiconductor device, semiconductor package, semiconductor module,...

Electrical overstress protection for electronic systems subject to...

Vertical thyristor

High voltage tolerant circuit architecture for applications subject...

Bypass thyristor device with gas expansion cavity within a contact...

Bidirectional phase controlled thyristor (BiPCT)—a new semiconducto...

Power electronic arrangement

Semiconductor device, semiconductor package, semiconductor module,...

One-way switch with a gate referenced to the main back side electrode

Flat gate commutated thyristor

Electrostatic discharge protection device

Phase control thyristor

Silicon-controlled rectifiers having a cathode coupled by a contact...

Semiconductor device and method of manufacturing the semiconductor...

Vertical thyristor memory with minority carrier lifetime reduction

Insulated gate turn-off device with hole injector for faster turn off

Power semiconductor device

Thyristor with improved plasma spreading

Silicon controlled rectifiers (SCR), methods of manufacture and des...

Embedded PMOS-trigger silicon controlled rectifier (SCR) with suppr...

Insulated gate turn-off device with turn-off transistor

Bipolar non-punch-through power semiconductor device

Patents Applicationslast 30 patents

THYRISTOR BASED ON CHARGE PLASMA AND CROSS-POINT MEMORY ARRAY INCLU...

RC-IGBT

SEMICONDUCTOR DEVICE

MODULE COMPRISING A SWITCHABLE BYPASS DEVICE

POWER SEMICONDUCTOR DEVICE

Integrated Gate-Commutated Thyristor (IGCT)

MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE

ELECTRICAL OVERSTRESS PROTECTION WITH LOW LEAKAGE CURRENT FOR HIGH...

SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, SEMICONDUCTOR MODULE,...

SCR HAVING SELECTIVE WELL CONTACTS

SEMICONDUCTOR DEVICE

SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING IT

SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, SEMICONDUCTOR MODULE,...

Bidirectional Phase Controlled Thyristor (BiPCT) - A New Semiconduc...

HIGH VOLTAGE TOLERANT CIRCUIT ARCHITECTURE FOR APPLICATIONS SUBJECT...

ELECTRICAL OVERSTRESS PROTECTION WITH LOW LEAKAGE CURRENT FOR HIGH...

VERTICAL THYRISTOR

BYPASS THYRISTOR DEVICE WITH GAS EXPANSION CAVITY WITHIN A CONTACT...

SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, SEMICONDUCTOR MODULE,...

4-LAYER DEVICES WITH IMPROVED REVERSE CURRENT ACTION CAPABILITY

ELECTROSTATIC DISCHARGE PROTECTION DEVICE

Embedded PMOS-Trigger Silicon Controlled Rectifier (SCR) with Suppr...

FLAT GATE COMMUTATED THYRISTOR

THYRISTOR WITH IMPROVED PLASMA SPREADING

INSULATED GATE TURN-OFF DEVICE WITH HOLE INJECTOR FOR FASTER TURN OFF

ESD PROTECTION STRUCTURE

PHASE CONTROL THYRISTOR

ZENER DIODE

SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE