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H01L29/42376

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/42376characterised by the length or the sectional shape

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,218,234
- Issue date Feb 4, 2025
- Rohm Co., Ltd.
- Kengo Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure cutting process and structures formed thereby
- Patent number 12,218,130
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chang Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,211,836
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having highly integrated NMOS and PMOS t...
- Patent number 12,211,847
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Jaehoon Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having a subtrate with...
- Patent number 12,207,460
- Issue date Jan 21, 2025
- Renesas Electronics Corporation
- Tomohiro Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate electrode with a top peripheral...
- Patent number 12,204,232
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Shu Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for forming a semiconductor structure
- Patent number 12,206,010
- Issue date Jan 21, 2025
- Winbond Electronics Corp.
- Shu-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor device
- Patent number 12,206,001
- Issue date Jan 21, 2025
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors having vertically stacked nano-sheet
- Patent number 12,199,095
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate formation of semiconductor devices
- Patent number 12,198,988
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chang-Jhih Syu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 12,191,266
- Issue date Jan 7, 2025
- Kabushiki Kaisha Toshiba
- Emiko Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with enlarged gate electrode structure and...
- Patent number 12,191,366
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective hybrid capping layer for metal gates of transistors
- Patent number 12,183,629
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with airgap spacers
- Patent number 12,176,405
- Issue date Dec 24, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Khee Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and manufacturing method thereof
- Patent number 12,166,040
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with uneven gate profile
- Patent number 12,166,096
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Sheng Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structures
- Patent number 12,148,752
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout pattern of static random access memory
- Patent number 12,148,809
- Issue date Nov 19, 2024
- United Microelectronics Corp.
- Chun-Hsien Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate structure with different lengths...
- Patent number 12,142,666
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yu Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing metal gate overhang by forming a top-wide bottom-narrow du...
- Patent number 12,142,664
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih Wei Bih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current mirror
- Patent number 12,130,651
- Issue date Oct 29, 2024
- STMicroelectronics (Grenoble 2) SAS
- Renald Boulestin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having substantially parallelepiped-shaped insulatin...
- Patent number 12,125,899
- Issue date Oct 22, 2024
- STMicroelectronics (Rousset) SAS
- Arnaud Regnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming the same
- Patent number 12,125,851
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multi-level self-aligned gate and source/drain term...
- Patent number 12,119,383
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained gate semiconductor device having an interlayer dielectric...
- Patent number 12,100,767
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for metal gates
- Patent number 12,100,627
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tung-Huang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 12,094,944
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048672
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Shoji TAKEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048722
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Shoji TAKEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming layout pattern of static random access memory
- Publication number 20250040228
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...
- Publication number 20250040165
- Publication date Jan 30, 2025
- STMicroelectronics (Rousset) SAS
- Arnaud REGNIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250040234
- Publication date Jan 30, 2025
- MEDIATEK INC.
- Je-Min WEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031396
- Publication date Jan 23, 2025
- Mitsubishi Electric Corporation
- Kazuya KONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
- Publication number 20250029839
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR, STORAGE UNIT AND MANUFACTURING METHOD THEREFOR
- Publication number 20250031411
- Publication date Jan 23, 2025
- BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY
- Huihui LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031415
- Publication date Jan 23, 2025
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20250015080
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015179
- Publication date Jan 9, 2025
- United Microelectronics Corp.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND IMAGING APPARATUS
- Publication number 20250006753
- Publication date Jan 2, 2025
- Sony Semiconductor Solutions Corporation
- AKITO SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429297
- Publication date Dec 26, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE-BASED DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240429295
- Publication date Dec 26, 2024
- XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD.
- Dongpo CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240429296
- Publication date Dec 26, 2024
- ROHM CO., LTD.
- Shinya TAKADO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240413241
- Publication date Dec 12, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki KATOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY DEVICE
- Publication number 20240395884
- Publication date Nov 28, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCT...
- Publication number 20240395872
- Publication date Nov 28, 2024
- NXP USA, Inc.
- Jie Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL POWER SEMICONDUCTOR DEVICE
- Publication number 20240395930
- Publication date Nov 28, 2024
- University of Electronic Science and Technology of China
- Ming QIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES HAVING GATE DIELECTRIC LAYERS OF VARYING TH...
- Publication number 20240395628
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Pei-Hsun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE
- Publication number 20240387692
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yu KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387520
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE HYBRID CAPPING LAYER FOR METAL GATES OF TRANSISTORS
- Publication number 20240387257
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...
- Publication number 20240379834
- Publication date Nov 14, 2024
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...
- Publication number 20240379790
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURES
- Publication number 20240379671
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the length or the sectional shape

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor structure cutting process and structures formed thereby

Semiconductor device and manufacturing method thereof

Integrated circuit devices having highly integrated NMOS and PMOS t...

Method of manufacturing semiconductor device having a subtrate with...

Semiconductor device having a gate electrode with a top peripheral...

Method for forming a semiconductor structure

FinFET semiconductor device

Fin field effect transistors having vertically stacked nano-sheet

Gate formation of semiconductor devices

Semiconductor device and manufacturing method of semiconductor device

Semiconductor structure with enlarged gate electrode structure and...

Selective hybrid capping layer for metal gates of transistors

Field-effect transistors with airgap spacers

Method of forming a transistor device with a gate structure having...

Semiconductor device with fin transistors and manufacturing method...

Integrated circuit and manufacturing method thereof

Semiconductor device structure with uneven gate profile

High voltage transistor structures

Layout pattern of static random access memory

Double-channel HEMT device and manufacturing method thereof

Semiconductor device having a gate structure with different lengths...

Reducing metal gate overhang by forming a top-wide bottom-narrow du...

Current mirror

MOS transistor having substantially parallelepiped-shaped insulatin...

FinFET device and method of forming the same

Transistor with multi-level self-aligned gate and source/drain term...

Strained gate semiconductor device having an interlayer dielectric...

Method and structure for metal gates

Transistor circuits including fringeless transistors and method of...

Patents Applicationslast 30 patents

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Method for forming layout pattern of static random access memory

MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

VERTICAL TRANSISTOR, STORAGE UNIT AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE

FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND IMAGING APPARATUS

SEMICONDUCTOR DEVICE

GALLIUM NITRIDE-BASED DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

RADIO FREQUENCY DEVICE

SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCT...

LATERAL POWER SEMICONDUCTOR DEVICE

GATE-ALL-AROUND DEVICES HAVING GATE DIELECTRIC LAYERS OF VARYING TH...

LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SELECTIVE HYBRID CAPPING LAYER FOR METAL GATES OF TRANSISTORS

RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...

HIGH VOLTAGE TRANSISTOR STRUCTURES