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H01L29/42376

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/42376characterised by the length or the sectional shape

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and manufacturing method thereof
- Patent number 12,166,040
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with uneven gate profile
- Patent number 12,166,096
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chi-Sheng Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structures
- Patent number 12,148,752
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout pattern of static random access memory
- Patent number 12,148,809
- Issue date Nov 19, 2024
- United Microelectronics Corp.
- Chun-Hsien Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate structure with different lengths...
- Patent number 12,142,666
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yu Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing metal gate overhang by forming a top-wide bottom-narrow du...
- Patent number 12,142,664
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih Wei Bih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current mirror
- Patent number 12,130,651
- Issue date Oct 29, 2024
- STMicroelectronics (Grenoble 2) SAS
- Renald Boulestin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having substantially parallelepiped-shaped insulatin...
- Patent number 12,125,899
- Issue date Oct 22, 2024
- STMicroelectronics (Rousset) SAS
- Arnaud Regnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming the same
- Patent number 12,125,851
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multi-level self-aligned gate and source/drain term...
- Patent number 12,119,383
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained gate semiconductor device having an interlayer dielectric...
- Patent number 12,100,767
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ta Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for metal gates
- Patent number 12,100,627
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tung-Huang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuits including fringeless transistors and method of...
- Patent number 12,094,944
- Issue date Sep 17, 2024
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around device
- Patent number 12,094,946
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yung-Chih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,094,968
- Issue date Sep 17, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki Katou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,094,874
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,094,945
- Issue date Sep 17, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Daejoong Won
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,087,862
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor array substrate and electronic device includin...
- Patent number 12,087,835
- Issue date Sep 10, 2024
- LG Display Co., Ltd.
- Dohyung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,074,224
- Issue date Aug 27, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Yoshinobu Asami
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device with improved temperature uniformity
- Patent number 12,074,198
- Issue date Aug 27, 2024
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Etching back and selective deposition of metal gate
- Patent number 12,068,393
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, template, and method of manufacturing template
- Patent number 12,068,244
- Issue date Aug 20, 2024
- Kioxia Corporation
- Yasuhito Yoshimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,068,367
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Jun Hyeok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide transistor device
- Patent number 12,062,698
- Issue date Aug 13, 2024
- HITACHI ENERGY LTD
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including source pad region and drain pad regi...
- Patent number 12,062,716
- Issue date Aug 13, 2024
- ANCORA SEMICONDUCTORS INC.
- Li-Fan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate cap
- Patent number 12,057,486
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact EEPROM memory cell with a gate dielectric layer having two...
- Patent number 12,052,861
- Issue date Jul 30, 2024
- STMicroelectronics (Rousset) SAS
- François Tailliet
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240413241
- Publication date Dec 12, 2024
- Kabushiki Kaisha Toshiba
- Hiroaki KATOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY DEVICE
- Publication number 20240395884
- Publication date Nov 28, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCT...
- Publication number 20240395872
- Publication date Nov 28, 2024
- NXP USA, Inc.
- Jie Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL POWER SEMICONDUCTOR DEVICE
- Publication number 20240395930
- Publication date Nov 28, 2024
- University of Electronic Science and Technology of China
- Ming QIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES HAVING GATE DIELECTRIC LAYERS OF VARYING TH...
- Publication number 20240395628
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Pei-Hsun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE
- Publication number 20240387692
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yu KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387520
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE HYBRID CAPPING LAYER FOR METAL GATES OF TRANSISTORS
- Publication number 20240387257
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...
- Publication number 20240379834
- Publication date Nov 14, 2024
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...
- Publication number 20240379790
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Wen HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379364
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Jiun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSISTOR STRUCTURES
- Publication number 20240379671
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240379791
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TA-CHUAN LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-END GATE STRUCTURES AND METHOD FORMING SAME
- Publication number 20240379821
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379677
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE
- Publication number 20240371973
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Soon Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR FORMED ON SO...
- Publication number 20240363750
- Publication date Oct 31, 2024
- RENESAS ELECTRONICS CORPORATION
- Kazuya UEJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR METAL GATES
- Publication number 20240363441
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TUNG-HUANG CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit Structure with Gate Configuration
- Publication number 20240347614
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240339515
- Publication date Oct 10, 2024
- DB HITEK CO., LTD.
- Ja Geon KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE...
- Publication number 20240339533
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Cheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure and Method of Forming Same
- Publication number 20240332191
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Jen Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GATE WITH DIFFERENT LATERALLY ADJACE...
- Publication number 20240332417
- Publication date Oct 3, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Thomas Melde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT WIDENING
- Publication number 20240332172
- Publication date Oct 3, 2024
- Intel Corporation
- Ehren MANNEBACH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES
- Publication number 20240321983
- Publication date Sep 26, 2024
- Samsung Electronics Co., Ltd.
- Jongryeol YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH WORK FUNCTION LAYER AND METHOD...
- Publication number 20240322009
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Han FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME
- Publication number 20240322044
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...
- Publication number 20240322037
- Publication date Sep 26, 2024
- SONY GROUP CORPORATION
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL GATE DEVICE
- Publication number 20240313074
- Publication date Sep 19, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Wen Huang
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the length or the sectional shape

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with fin transistors and manufacturing method...

Integrated circuit and manufacturing method thereof

Semiconductor device structure with uneven gate profile

High voltage transistor structures

Layout pattern of static random access memory

Double-channel HEMT device and manufacturing method thereof

Semiconductor device having a gate structure with different lengths...

Reducing metal gate overhang by forming a top-wide bottom-narrow du...

Current mirror

MOS transistor having substantially parallelepiped-shaped insulatin...

FinFET device and method of forming the same

Transistor with multi-level self-aligned gate and source/drain term...

Strained gate semiconductor device having an interlayer dielectric...

Method and structure for metal gates

Transistor circuits including fringeless transistors and method of...

Gate all around device

Semiconductor device and method for manufacturing same

Semiconductor devices and methods of manufacturing thereof

Semiconductor structure and forming method thereof

Semiconductor device

Thin film transistor array substrate and electronic device includin...

Semiconductor device and manufacturing method thereof

Semiconductor device with improved temperature uniformity

Etching back and selective deposition of metal gate

Semiconductor device, template, and method of manufacturing template

Semiconductor device

Silicon carbide transistor device

Semiconductor device including source pad region and drain pad regi...

Metal gate cap

Compact EEPROM memory cell with a gate dielectric layer having two...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

RADIO FREQUENCY DEVICE

SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCT...

LATERAL POWER SEMICONDUCTOR DEVICE

GATE-ALL-AROUND DEVICES HAVING GATE DIELECTRIC LAYERS OF VARYING TH...

LATERALLY ETCHED SPACERS FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SELECTIVE HYBRID CAPPING LAYER FOR METAL GATES OF TRANSISTORS

RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND...

SEMICONDUCTOR DEVICES

HIGH VOLTAGE TRANSISTOR STRUCTURES

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

FIN-END GATE STRUCTURES AND METHOD FORMING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE

SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR FORMED ON SO...

METHOD AND STRUCTURE FOR METAL GATES

Circuit Structure with Gate Configuration

SEMICONDUCTOR DEVICE

GATE ELECTRODE EXTENDING INTO A SHALLOW TRENCH ISOLATION STRUCTURE...

Interconnect Structure and Method of Forming Same

SEMICONDUCTOR DEVICE INCLUDING GATE WITH DIFFERENT LATERALLY ADJACE...

INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT WIDENING

INTEGRATED CIRCUIT DEVICES

SEMICONDUCTOR DEVICE STRUCTURE WITH WORK FUNCTION LAYER AND METHOD...

STACKED GATE-ALL-AROUND FINFET AND METHOD FORMING THE SAME

MULTI-THRESHOLD VOLTAGE DEVICES AND ASSOCIATED TECHNIQUES AND CONFI...

WORK FUNCTION METAL GATE DEVICE