characterised by the structure of the channel

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CPC
H01L29/78696

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/78696characterised by the structure of the channel

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure and method for forming the semicondu...
- Patent number 12,176,390
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Fai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact with air spacer
- Patent number 12,176,400
- Issue date Dec 24, 2024
- TAIWAN SEMINCODCUTOR MANUFACTURING COMPANY, LTD.
- Chen-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,176,409
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation transistors and back side volta...
- Patent number 12,176,411
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,176,412
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned hybrid substrate stacked gate-all-around transistors
- Patent number 12,176,348
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D nano sheet method using 2D material integrated with conductive o...
- Patent number 12,176,249
- Issue date Dec 24, 2024
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature separation structure
- Patent number 12,178,032
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicide gate fill structure
- Patent number 12,176,392
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact for nanosheet device
- Patent number 12,176,404
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanosheet transistor with defect free channel
- Patent number 12,176,416
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor system including semiconduct...
- Patent number 12,176,436
- Issue date Dec 24, 2024
- FLOSFIA INC.
- Masahiro Sugimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor including oxide semiconductor layer, method of...
- Patent number 12,176,437
- Issue date Dec 24, 2024
- LG Display Co., Ltd.
- HeeSung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 12,176,439
- Issue date Dec 24, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device
- Patent number 12,178,031
- Issue date Dec 24, 2024
- SOCIONEXT INC.
- Yoshinobu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate boundary for transistor scaling
- Patent number 12,176,250
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire/nanosheet device with support portion, method of manufactu...
- Patent number 12,176,393
- Issue date Dec 24, 2024
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized spacer for nanowire transistors and methods of fabrication
- Patent number 12,176,408
- Issue date Dec 24, 2024
- Intel Corporation
- Sudipto Naskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact structures for semiconductor nanowires and nano...
- Patent number 12,176,429
- Issue date Dec 24, 2024
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for operating semiconductor device
- Patent number 12,176,810
- Issue date Dec 24, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Hiroki Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and manufacturing method of the same
- Patent number 12,170,277
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kam-Tou Sio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with conductive via formation on self-aligned ga...
- Patent number 12,170,203
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide semiconductor transistor, method of manufacturing the same, a...
- Patent number 12,170,336
- Issue date Dec 17, 2024
- Samsung Electronics Co., Ltd.
- Kwanghee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit and semiconductor device
- Patent number 12,170,338
- Issue date Dec 17, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid semiconductor device
- Patent number 12,170,279
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Chien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 12,170,281
- Issue date Dec 17, 2024
- Samsung Electronics Co., Ltd.
- Sun Ki Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures for semiconductor devices
- Patent number 12,170,335
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor substrate including wirings connecting between transisto...
- Patent number 12,170,290
- Issue date Dec 17, 2024
- Japan Display Inc.
- Gen Koide
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...
- Publication number 20240421035
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicolas Jean Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION...
- Publication number 20240421154
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Jongjin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240421186
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240421205
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421207
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Jiho YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421232
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Suk YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20240421070
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Sunjung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- Publication number 20240421148
- Publication date Dec 19, 2024
- SOCIONEXT INC.
- Isaya SOBUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH
- Publication number 20240421156
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421206
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Seonkyu Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240421231
- Publication date Dec 19, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...
- Publication number 20240421201
- Publication date Dec 19, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONVERGENT FIN AND NANOSTRUCTURE TRANSISTOR STRUCTURE AND METHOD
- Publication number 20240421185
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240421188
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- HYO KYOUNG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240421189
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Beom Jin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240420967
- Publication date Dec 19, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421082
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Jeon Won Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUF...
- Publication number 20240421187
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240421190
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Seong Heum Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUNNELED SOURCE/DRAIN INTERFACIAL REGION
- Publication number 20240421191
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER
- Publication number 20240421037
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240413204
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Jeewoong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...
- Publication number 20240413220
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan Chen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240413251
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Kyen-Hee LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK...
- Publication number 20240413219
- Publication date Dec 12, 2024
- QUALCOMM Incorporated
- Xia Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
LASER ANNEAL FORMED NANOSHEET LDMOS TRANSISTOR
- Publication number 20240413242
- Publication date Dec 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING TH...
- Publication number 20240413248
- Publication date Dec 12, 2024
- SAMSUNG DISPLAY CO., LTD.
- Yong Su LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240413167
- Publication date Dec 12, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the structure of the channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device structure and method for forming the semicondu...

Backside contact with air spacer

Strained semiconductor FET devices with epitaxial quality improvement

Semiconductor devices and methods of manufacturing thereof

Semiconductor device with isolation transistors and back side volta...

Semiconductor devices and methods of manufacturing thereof

Self-aligned hybrid substrate stacked gate-all-around transistors

3D nano sheet method using 2D material integrated with conductive o...

Source/drain feature separation structure

Semiconductor device with silicide gate fill structure

Wrap-around contact for nanosheet device

Stacked nanosheet transistor with defect free channel

Semiconductor device and semiconductor system including semiconduct...

Thin-film transistor including oxide semiconductor layer, method of...

Semiconductor device and method for manufacturing semiconductor device

Semiconductor storage device

Metal gate boundary for transistor scaling

Nanowire/nanosheet device with support portion, method of manufactu...

Localized spacer for nanowire transistors and methods of fabrication

Wrap-around contact structures for semiconductor nanowires and nano...

Semiconductor device and method for operating semiconductor device

Gate-all-around device with trimmed channel and dipoled dielectric...

Integrated circuit and manufacturing method of the same

Integrated circuit with conductive via formation on self-aligned ga...

Oxide semiconductor transistor, method of manufacturing the same, a...

Logic circuit and semiconductor device

Hybrid semiconductor device

Semiconductor device and method of fabricating the same

Epitaxial structures for semiconductor devices

Transistor substrate including wirings connecting between transisto...

Patents Applicationslast 30 patents

TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH

SEMICONDUCTOR DEVICE

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...

CONVERGENT FIN AND NANOSTRUCTURE TRANSISTOR STRUCTURE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUF...

SEMICONDUCTOR DEVICES

FUNNELED SOURCE/DRAIN INTERFACIAL REGION

SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER

SEMICONDUCTOR DEVICES

STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING THERMAL EXPANSION OF WORK...

NANOSHEET TRANSISTOR

LASER ANNEAL FORMED NANOSHEET LDMOS TRANSISTOR

THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING TH...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME