characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions

Industry

CPC
H01L29/06

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/06characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with improved device performance
- Patent number 11,978,736
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,978,769
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Kwang-Young Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,978,793
- Issue date May 7, 2024
- Shindengen Electric Manufacturing Co., Ltd.
- Kinya Ohtani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,978,734
- Issue date May 7, 2024
- Mediatek Inc.
- Po-Chao Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor structure
- Patent number 11,978,768
- Issue date May 7, 2024
- Winbond Electronics Corp.
- Tseng-Yao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field effect transistor with vertical current paths an...
- Patent number 11,978,774
- Issue date May 7, 2024
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium nano...
- Patent number 11,978,784
- Issue date May 7, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruggedized symmetrically bidirectional bipolar power transistor
- Patent number 11,978,788
- Issue date May 7, 2024
- Ideal Power Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,978,798
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Seunggeol Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 11,978,799
- Issue date May 7, 2024
- Tahoe Research, LTD.
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor using elastic edge relaxation of a stressor...
- Patent number 11,978,800
- Issue date May 7, 2024
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppression device
- Patent number 11,978,809
- Issue date May 7, 2024
- Amazing Microelectronic Corp.
- Chih-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode package
- Patent number 11,978,832
- Issue date May 7, 2024
- Lextar Electronics Corporation
- Te-Chung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Filling openings by combining non-flowable and flowable processes
- Patent number 11,978,657
- Issue date May 7, 2024
- Intel Corporation
- Ebony L. Mays
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device using semiconductor element
- Patent number 11,980,022
- Issue date May 7, 2024
- Unisantis Electronics Singapore Pte. Ltd.
- Masakazu Kakumu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number RE49963
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Ki Hwan Kim
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 11,978,674
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- I-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit comprising a substrate equipped with a trap-rich...
- Patent number 11,978,710
- Issue date May 7, 2024
- STMicroelectronics (Crolles 2) SAS
- Didier Dutartre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device, packaging structure, and electronic device
- Patent number 11,978,767
- Issue date May 7, 2024
- Huawei Technologies Co., Ltd.
- Zhaozheng Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of gate contact formation for vertical transistors
- Patent number 11,978,777
- Issue date May 7, 2024
- BESANG, INC.
- Sang-Yun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral fin static induction transistor
- Patent number 11,978,789
- Issue date May 7, 2024
- HRL Laboratories, LLC
- Biqin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, power conversion device, thre...
- Patent number 11,978,794
- Issue date May 7, 2024
- Hitachi, Ltd.
- Takeru Suto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with doped region between gate and drain
- Patent number 11,978,797
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lian-Jie Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an IC including a varactor with reduced surface...
- Patent number 11,978,810
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,978,770
- Issue date May 7, 2024
- Samsung Electronics Co., Ltd.
- Myung-Dong Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices with gate all around transistors
- Patent number 11,980,014
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Connection between source/drain and gate
- Patent number 11,980,016
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chuan Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation method of semiconductor device structure with semiconduct...
- Patent number 11,978,773
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 11,973,110
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Che-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 11,973,111
- Issue date Apr 30, 2024
- Samsung Electronics Co., Ltd.
- Mun Hyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145465
- Publication date May 2, 2024
- Fuji Electric Co., Ltd.
- Shigeki SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC PILLARS
- Publication number 20240145472
- Publication date May 2, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ASYMMETRIC SOURCE/DRAIN REGIONS
- Publication number 20240145538
- Publication date May 2, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240145543
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yi LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING DIELECTRIC ANCHOR VOID
- Publication number 20240145568
- Publication date May 2, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240145573
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Ilgyou Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING SIDE SPACER PATTERNS
- Publication number 20240145577
- Publication date May 2, 2024
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20240145582
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ling-Yen YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH LOW RESISTANCE CONTACT
- Publication number 20240145555
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Heng Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145556
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Gukhee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITANCE REDUCTION FOR BACKSIDE POWER RAIL DEVICE
- Publication number 20240145562
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Zhen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145586
- Publication date May 2, 2024
- RENESAS ELECTRONICS CORPORATION
- Nao Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING CONDUCTING STRUCTURE AND METHODS...
- Publication number 20240145593
- Publication date May 2, 2024
- Peiching LING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...
- Publication number 20240145537
- Publication date May 2, 2024
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES RELATED TO RADIO FREQUENCY DEVICES
- Publication number 20240145253
- Publication date May 2, 2024
- Infineon Technologies Dresden GmbH & Co., KG
- Hans Taddiken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MERGED TRENCHES SURROUNDED BY WIDER TRENCH FOR ISOLATING SEMICONDUC...
- Publication number 20240145293
- Publication date May 2, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20240145480
- Publication date May 2, 2024
- STMicroelectronics, Inc.
- John H. ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240147725
- Publication date May 2, 2024
- KIOXIA Corporation
- Shinya ARAI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240145345
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Yeonggil KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
- Publication number 20240145549
- Publication date May 2, 2024
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES AND SYSTEMS FOR OFFSET CROSS FIELD-EFFECT TRANSISTORS
- Publication number 20240145565
- Publication date May 2, 2024
- ADVANCED MICRO DEVICES, INC.
- Richard SCHULTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SILICON CARBIDE (SI...
- Publication number 20240145588
- Publication date May 2, 2024
- INFINEON TECHNOLOGIES AG
- Thomas Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D ISOLATION OF A SEGMENTATED 3D NANOSHEET CHANNEL REGION
- Publication number 20240145595
- Publication date May 2, 2024
- TOKYO ELECTRON LIMITED
- H. Jim FULFORD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE ISOLATED STRAINED GATE-ALL-AROUND FIELD EFFECT TRANSISTOR
- Publication number 20240145468
- Publication date May 2, 2024
- Applied Materials, Inc.
- Shawn THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH S...
- Publication number 20240145471
- Publication date May 2, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...
- Publication number 20240145473
- Publication date May 2, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240145474
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Kyung ho KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240145475
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-WEI PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20240145533
- Publication date May 2, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Kaochao CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING MULTIPLE GATE DIELECTRICS AND MULTIPLE W...
- Publication number 20240145539
- Publication date May 2, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device with improved device performance

Semiconductor device and method of fabricating the same

Semiconductor device and method of manufacturing semiconductor device

Semiconductor structure and method of forming the same

Manufacturing method of semiconductor structure

High voltage field effect transistor with vertical current paths an...

Gate-all-around integrated circuit structures having germanium nano...

Ruggedized symmetrically bidirectional bipolar power transistor

Semiconductor device

Method for fabricating transistor with thinned channel

Strained semiconductor using elastic edge relaxation of a stressor...

Transient voltage suppression device

Light emitting diode package

Filling openings by combining non-flowable and flowable processes

Memory device using semiconductor element

Semiconductor device and method of fabricating the same

Semiconductor device structure and methods of forming the same

Integrated circuit comprising a substrate equipped with a trap-rich...

Power semiconductor device, packaging structure, and electronic device

Methods of gate contact formation for vertical transistors

Lateral fin static induction transistor

Silicon carbide semiconductor device, power conversion device, thre...

Semiconductor device with doped region between gate and drain

Method for forming an IC including a varactor with reduced surface...

Semiconductor device

Memory devices with gate all around transistors

Connection between source/drain and gate

Formation method of semiconductor device structure with semiconduct...

Semiconductor structure and method of forming the same

Semiconductor devices and methods for fabricating the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE WITH DIELECTRIC PILLARS

TRANSISTORS WITH ASYMMETRIC SOURCE/DRAIN REGIONS

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

INTEGRATED CIRCUIT STRUCTURES HAVING DIELECTRIC ANCHOR VOID

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE HAVING SIDE SPACER PATTERNS

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

TRANSISTOR STRUCTURE WITH LOW RESISTANCE CONTACT

SEMICONDUCTOR DEVICE

CAPACITANCE REDUCTION FOR BACKSIDE POWER RAIL DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURES INCLUDING CONDUCTING STRUCTURE AND METHODS...

SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...

METHODS AND DEVICES RELATED TO RADIO FREQUENCY DEVICES

MERGED TRENCHES SURROUNDED BY WIDER TRENCH FOR ISOLATING SEMICONDUC...

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

APPARATUSES AND SYSTEMS FOR OFFSET CROSS FIELD-EFFECT TRANSISTORS

VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SILICON CARBIDE (SI...

3D ISOLATION OF A SEGMENTATED 3D NANOSHEET CHANNEL REGION

SUBSTRATE ISOLATED STRAINED GATE-ALL-AROUND FIELD EFFECT TRANSISTOR

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEVICES WITH S...

STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

STACKED TRANSISTORS HAVING MULTIPLE GATE DIELECTRICS AND MULTIPLE W...