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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/41characterised by their shape, relative sizes or dispositions

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Thin film transistor having a semiconductor layer comprising a plur...
- Patent number 12,230,683
- Issue date Feb 18, 2025
- BOE Technology Group Co., Ltd.
- Lizhong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating a semiconductor wafer
- Patent number 12,230,689
- Issue date Feb 18, 2025
- Infineon Technologies AG
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having partitioned source or drain co...
- Patent number 12,230,717
- Issue date Feb 18, 2025
- Intel Corporation
- Mauro J. Kobrinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bridge channel field effect transistor with multiple inner sp...
- Patent number 12,230,685
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Sungsoo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,230,713
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with continuous active region and raised source/...
- Patent number 12,230,684
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jinha Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making nanostructure transistors with source/drain trenc...
- Patent number 12,230,694
- Issue date Feb 18, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid crystal display device
- Patent number 12,228,833
- Issue date Feb 18, 2025
- Samsung Display Co., Ltd.
- Kye Uk Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 12,230,635
- Issue date Feb 18, 2025
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacture by monitoring relative...
- Patent number 12,230,532
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yun Chen Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,230,682
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Yoontae Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for layout-dependent voltage handling improveme...
- Patent number 12,230,631
- Issue date Feb 18, 2025
- Skyworks Solutions, Inc.
- Guillaume Alexandre Blin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices with different doping types
- Patent number 12,230,681
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming a high electron mobility transistor
- Patent number 12,230,690
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bypassed gate transistors having improved stability
- Patent number 12,230,701
- Issue date Feb 18, 2025
- MACOM Technology Solutions Holdings, Inc.
- Khaled Fayed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source contact formation of MOSFET with gate shield buffer for pitc...
- Patent number 12,230,707
- Issue date Feb 18, 2025
- Silanna Asia Pte Ltd
- Touhidur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 12,224,203
- Issue date Feb 11, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 12,224,211
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,225,716
- Issue date Feb 11, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qu Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,224,341
- Issue date Feb 11, 2025
- Hyundai Motor Company
- NackYong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming backside power rails
- Patent number 12,224,324
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and manufacturing methods of the same
- Patent number 12,225,725
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- So Hyeon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide structures in transistors and methods of forming
- Patent number 12,224,330
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Di Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with backside air gap dielectric
- Patent number 12,224,212
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,319
- Issue date Feb 11, 2025
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,224,325
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,224,327
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Ju Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact architecture for capacitance reduction and satisfactory con...
- Patent number 12,224,326
- Issue date Feb 11, 2025
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 12,218,209
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,218,212
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Doosan Back
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250063799
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250063771
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...
- Publication number 20250063760
- Publication date Feb 20, 2025
- SUZHOU WATECH ELECTRONICS CO., LTD.
- Changchang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE STRUCTURES AND METHODS OF FORMATION
- Publication number 20250063758
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063763
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Won Keun CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAPPED METAL CONTACT FOR STACKED FET
- Publication number 20250063795
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION MODULE FOR BACKSIDE POWER DELIVERY
- Publication number 20250063797
- Publication date Feb 20, 2025
- Applied Materials, Inc.
- Kyoung Ha KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Structures for Dual-Thickness Active Area SOI FETS
- Publication number 20250063822
- Publication date Feb 20, 2025
- pSemi Corporation
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063776
- Publication date Feb 20, 2025
- UNITED MICROELECTRONICS CORP.
- Hsin-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIVER STAGE CURRENT DENSITY ENHANCEMENT
- Publication number 20250063798
- Publication date Feb 20, 2025
- Intel Corporation
- Yuri Rozenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH GATE SPACER AND METHOD FOR FORM...
- Publication number 20250062158
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Li CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250062192
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20250063757
- Publication date Feb 20, 2025
- Sony Semiconductor Solutions Corporation
- RYOHEI TAKAYANAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CONTACT STRUCTURE AND METHOD FO...
- Publication number 20250063764
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250063796
- Publication date Feb 20, 2025
- Kabushiki Kaisha Toshiba
- Hiroki NEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250056838
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Seo Woo Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND METHOD
- Publication number 20250056846
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE BACKSIDE ISOLATION FEATURE INTEGRATION
- Publication number 20250056865
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056866
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250056832
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...
- Publication number 20250056824
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250056862
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ENHANCED PLACEHOLDER POSITION MARGIN
- Publication number 20250056864
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS
- Publication number 20250056867
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS RELATED TO RADIO-FREQUENCY SWITCHING DEVICES HAVING IMPROVE...
- Publication number 20250056880
- Publication date Feb 13, 2025
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...
- Publication number 20250056825
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREFOR
- Publication number 20250054838
- Publication date Feb 13, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Guanhua YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048672
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Shoji TAKEI
- H01 - BASIC ELECTRIC ELEMENTS

characterised by their shape, relative sizes or dispositions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Thin film transistor having a semiconductor layer comprising a plur...

Semiconductor device and method for fabricating a semiconductor wafer

Integrated circuit structures having partitioned source or drain co...

Multi-bridge channel field effect transistor with multiple inner sp...

Semiconductor device structure and methods of forming the same

Integrated circuit with continuous active region and raised source/...

Method for making nanostructure transistors with source/drain trenc...

Liquid crystal display device

Gate-all-around integrated circuit structures having depopulated ch...

Semiconductor device, method of manufacture by monitoring relative...

Integrated circuit device

Devices and methods for layout-dependent voltage handling improveme...

Semiconductor memory devices with different doping types

Method of forming a high electron mobility transistor

Bypassed gate transistors having improved stability

Source contact formation of MOSFET with gate shield buffer for pitc...

Air gap spacer formation for nano-scale semiconductor devices

Manufacturing method of semiconductor device using gate-through imp...

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Method of forming backside power rails

Semiconductor devices and manufacturing methods of the same

Silicide structures in transistors and methods of forming

Semiconductor devices with backside air gap dielectric

Semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and method

Contact architecture for capacitance reduction and satisfactory con...

Contacts for semiconductor devices and methods of forming the same

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...

CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE

LOCAL TRAPPED METAL CONTACT FOR STACKED FET

ISOLATION MODULE FOR BACKSIDE POWER DELIVERY

Contact Structures for Dual-Thickness Active Area SOI FETS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

DRIVER STAGE CURRENT DENSITY ENHANCEMENT

SEMICONDUCTOR DEVICE STRUCTURE WITH GATE SPACER AND METHOD FOR FORM...

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

SEMICONDUCTOR DEVICE STRUCTURE WITH CONTACT STRUCTURE AND METHOD FO...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

TRANSISTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE BACKSIDE ISOLATION FEATURE INTEGRATION

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE WITH ENHANCED PLACEHOLDER POSITION MARGIN

INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS

METHODS RELATED TO RADIO-FREQUENCY SWITCHING DEVICES HAVING IMPROVE...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

THREE-DIMENSIONAL INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE