Charge-coupled devices

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CPC
H01L29/765

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/765Charge-coupled devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for measuring API gravity of petroleum crude oils using angl...
- Patent number 11,662,288
- Issue date May 30, 2023
- Saudi Arabian Oil Company
- Ezzat Hegazi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Detection circuit for photo sensor with stacked substrates
- Patent number 10,608,101
- Issue date Mar 31, 2020
- Facebook Technologies, LLC
- Xinqiao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-voltage charge-coupled devices with a heterostructure charge-st...
- Patent number 10,153,324
- Issue date Dec 11, 2018
- Arizona Board of Regents on behalf of Arizona State University
- Zhaoyu He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency conductor having improved conductivity
- Patent number 9,735,247
- Issue date Aug 15, 2017
- Forschungszentrum Juelich GmbH
- Martin Mikulics
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Matrix image sensor providing bidirectional charge transfer with as...
- Patent number 9,093,353
- Issue date Jul 28, 2015
- E2V Semiconductors
- Frederic Mayer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gain measurement structure
- Patent number 8,004,579
- Issue date Aug 23, 2011
- E2V Technologies (UK) Limited
- Mark Stanford Robbins
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Charge transfer semiconductor device and manufacturing method thereof
- Patent number 7,943,968
- Issue date May 17, 2011
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a heterojunction
- Patent number 5,981,986
- Issue date Nov 9, 1999
- Fujitsu Limited
- Takuma Tsuchiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a bipolar gate charge coupled device with clocked...
- Patent number 5,567,641
- Issue date Oct 22, 1996
- Texas Instruments Incorporated
- Jaroslav Hynecek
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar gate charge coupled device with clocked virtual phase
- Patent number 5,502,318
- Issue date Mar 26, 1996
- Texas Instruments Incorporated
- Jaroslav Hynecek
- G11 - INFORMATION STORAGE
Information Patent Grant
Diamond semiconductor device with carbide interlayer
- Patent number 5,455,432
- Issue date Oct 3, 1995
- Kobe Steel USA
- Michelle L. Hartsell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic in-based III-V compound semiconductor focal plane array...
- Patent number 5,386,128
- Issue date Jan 31, 1995
- The United States of America as represented by the administrator of the Natio...
- Eric R. Fossum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure acoustic charge transport device having electron an...
- Patent number 5,309,004
- Issue date May 3, 1994
- United Technologies Corporation
- Thomas W. Grudkowski
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
HACT structure with reduced surface state effects
- Patent number 5,264,717
- Issue date Nov 23, 1993
- United Technologies Corporation
- Thomas W. Grudkowski
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Nyquist frequency bandwidth hact memory
- Patent number 5,262,659
- Issue date Nov 16, 1993
- United Technologies Corporation
- Thomas W. Grudkowski
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Quantum wire CCD charge pump
- Patent number 5,144,580
- Issue date Sep 1, 1992
- Regents of the University of California
- Qian Niu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Surface channel hact
- Patent number 5,128,734
- Issue date Jul 7, 1992
- United Technologies Corporation
- Donald E. Cullen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Spatial light modulator using charge coupled device with quantum wells
- Patent number 5,105,248
- Issue date Apr 14, 1992
- Massachusetts Institute of Technology
- Barry E. Burke
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Charge transfer device with pn junction gates
- Patent number 4,814,843
- Issue date Mar 21, 1989
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Virtual phase buried channel CCD
- Patent number 4,779,124
- Issue date Oct 18, 1988
- Texas Instruments Incorporated
- Jaroslav Hynecek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an infrared-sensitive charge coupled device
- Patent number 4,749,659
- Issue date Jun 7, 1988
- U.S. Philips Corp.
- Philippe Jarry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier charge coupled device (CCD) manufacture
- Patent number 4,692,993
- Issue date Sep 15, 1987
- Marion D. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral confinement of charge carriers in a multiple quantum well s...
- Patent number 4,683,484
- Issue date Jul 28, 1987
- Bell Communications Research, Inc.
- Gustav E. Derkits
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-coupled transversal filter
- Patent number 4,612,521
- Issue date Sep 16, 1986
- U.S. Philips Corporation
- Marcus Kleefstra
- G05 - CONTROLLING REGULATING
Information Patent Grant
Multilayer modulation doped heterostructure charge coupled device
- Patent number 4,550,331
- Issue date Oct 29, 1985
- Rockwell International Corporation
- Raymond A. Milano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility single heterojunction semiconductor devices
- Patent number 4,424,525
- Issue date Jan 3, 1984
- Fujitsu Limited
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Change transfer device with PN Junction gates
- Patent number 4,300,151
- Issue date Nov 10, 1981
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried channel charge coupled device with semi-insulating substrate
- Patent number 4,285,000
- Issue date Aug 18, 1981
- Rockwell International Corporation
- Ira Deyhimy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-coupled component formed on gallium arsenide
- Patent number 4,264,915
- Issue date Apr 28, 1981
- Siemens Aktiengesellschaft
- Hartwig Bierhenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing bi-polar charge coupled devices by ion-implan...
- Patent number 4,231,810
- Issue date Nov 4, 1980
- Siemens Aktiengesellschaft
- Ottomar Jantsch
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MEASURING API GRAVITY OF PETROLEUM CRUDE OILS USING ANGL...
- Publication number 20220091003
- Publication date Mar 24, 2022
- Saudi Arabian Oil Company
- Ezzat Hegazi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DETECTION CIRCUIT FOR PHOTO SENSOR WITH STACKED SUBSTRATES
- Publication number 20190058058
- Publication date Feb 21, 2019
- Facebook Technologies, LLC
- Xinqiao Liu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
LOW-VOLTAGE CHARGE-COUPLED DEVICES WITH A HETEROSTRUCTURE CHARGE-ST...
- Publication number 20180069080
- Publication date Mar 8, 2018
- Arizona Board of Regents on behalf of Arizona State University
- Zhaoyu He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CCD FIXEL ELEMENT WITH GEOMETRY CAPABLE OF IMPROVING RESOLUTION
- Publication number 20110090386
- Publication date Apr 21, 2011
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of...
- Linpei Zhai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gain measurement structure
- Publication number 20070146521
- Publication date Jun 28, 2007
- E2V TECHNOLOGIES (UK) LIMITED
- Mark Stanford Robbins
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Charge-coupled devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for measuring API gravity of petroleum crude oils using angl...

Detection circuit for photo sensor with stacked substrates

Low-voltage charge-coupled devices with a heterostructure charge-st...

High-frequency conductor having improved conductivity

Matrix image sensor providing bidirectional charge transfer with as...

Gain measurement structure

Charge transfer semiconductor device and manufacturing method thereof

Semiconductor device having a heterojunction

Method of making a bipolar gate charge coupled device with clocked...

Bipolar gate charge coupled device with clocked virtual phase

Diamond semiconductor device with carbide interlayer

Monolithic in-based III-V compound semiconductor focal plane array...

Heterostructure acoustic charge transport device having electron an...

HACT structure with reduced surface state effects

Nyquist frequency bandwidth hact memory

Quantum wire CCD charge pump

Surface channel hact

Spatial light modulator using charge coupled device with quantum wells

Charge transfer device with pn junction gates

Virtual phase buried channel CCD

Method of manufacturing an infrared-sensitive charge coupled device

Schottky barrier charge coupled device (CCD) manufacture

Lateral confinement of charge carriers in a multiple quantum well s...

Charge-coupled transversal filter

Multilayer modulation doped heterostructure charge coupled device

High electron mobility single heterojunction semiconductor devices

Change transfer device with PN Junction gates

Buried channel charge coupled device with semi-insulating substrate

Charge-coupled component formed on gallium arsenide

Process for producing bi-polar charge coupled devices by ion-implan...

Patents Applicationslast 30 patents

METHOD FOR MEASURING API GRAVITY OF PETROLEUM CRUDE OILS USING ANGL...

DETECTION CIRCUIT FOR PHOTO SENSOR WITH STACKED SUBSTRATES

LOW-VOLTAGE CHARGE-COUPLED DEVICES WITH A HETEROSTRUCTURE CHARGE-ST...

CCD FIXEL ELEMENT WITH GEOMETRY CAPABLE OF IMPROVING RESOLUTION

Gain measurement structure