Charge trapping diodes

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H01L29/8616

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/8616Charge trapping diodes

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Patents Grantslast 30 patents

Information Patent Grant
Electrostatic catalysis
- Patent number 11,437,476
- Issue date Sep 6, 2022
- BECSIS, LLC
- Nicholas Boruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic catalysis
- Patent number 11,251,277
- Issue date Feb 15, 2022
- BECSIS, LLC
- Nicholas Boruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic catalysis
- Patent number 10,811,503
- Issue date Oct 20, 2020
- BECSIS, LLC
- Nicholas Boruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Organic EL device
- Patent number 10,777,619
- Issue date Sep 15, 2020
- Hotalux, Ltd.
- Yoshikazu Sakaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense arrays and charge storage devices
- Patent number 10,644,021
- Issue date May 5, 2020
- SanDisk Technologies LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Detector comprising a variable capacitance diode
- Patent number 10,147,824
- Issue date Dec 4, 2018
- Helmholtz-Zentrum Dresden-Rossendorf e.V.
- Heidemarie Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dense arrays and charge storage devices
- Patent number 10,008,511
- Issue date Jun 26, 2018
- SanDisk Technologies LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Dense arrays and charge storage devices
- Patent number 9,559,110
- Issue date Jan 31, 2017
- SanDisk Technologies LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite group III-V and group IV transistor having a switched sub...
- Patent number 9,461,034
- Issue date Oct 4, 2016
- Infineon Technologies Americas Corp.
- Yang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V HEMT having a selectably floating substrate
- Patent number 9,397,089
- Issue date Jul 19, 2016
- Infineon Technologies Americas Corp.
- Yang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Customizable nonlinear electrical devices
- Patent number 9,224,821
- Issue date Dec 29, 2015
- Hewlett Packard Enterprise Development LP
- Minxian Max Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Dense arrays and charge storage devices
- Patent number 9,171,857
- Issue date Oct 27, 2015
- Sandisk 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Dense arrays and charge storage devices
- Patent number 8,981,457
- Issue date Mar 17, 2015
- Sandisk 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell string based on gated-diode cell and memory array using...
- Patent number 8,964,475
- Issue date Feb 24, 2015
- Seoul National University R&DB Foundation
- Jong-Ho Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell access device having a pn-junction with polycrystalline...
- Patent number 8,907,316
- Issue date Dec 9, 2014
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Low leakage capacitor for analog floating-gate integrated circuits
- Patent number 8,729,616
- Issue date May 20, 2014
- Texas Instruments Incorporated
- Imran Mahmood Khan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a gate-control diode semiconductor memory...
- Patent number 8,574,958
- Issue date Nov 5, 2013
- Fudan University
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with amorphous silicon MAS memory cell structu...
- Patent number 8,569,757
- Issue date Oct 29, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage capacitor for analog floating-gate integrated circuits
- Patent number 8,558,296
- Issue date Oct 15, 2013
- Texas Instruments Incorporated
- Imran Mahmood Khan
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory and fabrication method and operation method for the same
- Patent number 8,526,242
- Issue date Sep 3, 2013
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level flash memory cell capable of fast programming
- Patent number 8,466,505
- Issue date Jun 18, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Shyue Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a memory device having a memory array includi...
- Patent number 8,389,357
- Issue date Mar 5, 2013
- Infineon Technologies AG
- Ronald Kakoschke
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated memory device having columns having multiple bit lines
- Patent number 8,288,813
- Issue date Oct 16, 2012
- Infineon Technologies AG
- Ronald Kakoschke
- G11 - INFORMATION STORAGE
Information Patent Grant
Fine particle-containing body, fine particle-containing body manufa...
- Patent number 8,153,207
- Issue date Apr 10, 2012
- Sharp Kabushiki Kaisha
- Nobutoshi Arai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device with amorphous silicon mas memory cell structu...
- Patent number 8,105,920
- Issue date Jan 31, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically isolated gated diode nonvolatile memory
- Patent number 7,995,384
- Issue date Aug 9, 2011
- Macronix International Co., Ltd.
- Tien-Fan Ou
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory using variable tunnel barrier widths
- Patent number 7,985,963
- Issue date Jul 26, 2011
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell, and method for storing data
- Patent number 7,948,822
- Issue date May 24, 2011
- Technische Universitat Berlin
- Dieter Bimberg
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gated diode nonvolatile memory process
- Patent number 7,888,707
- Issue date Feb 15, 2011
- Macronix International Co., Ltd.
- Yi Ying Liao
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Three terminal nonvolatile memory device with vertical gated diode
- Patent number 7,825,455
- Issue date Nov 2, 2010
- Sandisk 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ELECTROSTATIC CATALYSIS
- Publication number 20220149162
- Publication date May 12, 2022
- BECSIS, LLC
- Nicholas Boruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC CATALYSIS
- Publication number 20200411650
- Publication date Dec 31, 2020
- BECSIS, LLC
- Nicholas Boruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSE ARRAYS AND CHARGE STORAGE DEVICES
- Publication number 20200251492
- Publication date Aug 6, 2020
- SANDISK TECHNOLOGIES LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
DENSE ARRAYS AND CHARGE STORAGE DEVICES
- Publication number 20180254286
- Publication date Sep 6, 2018
- SanDisk Technologies LLC
- Thomas H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSE ARRAYS AND CHARGE STORAGE DEVICES
- Publication number 20170084627
- Publication date Mar 23, 2017
- SanDisk Technologies LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160276441
- Publication date Sep 22, 2016
- Kabushiki Kaisha Toshiba
- Masaru FURUKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V HEMT Having a Diode Controlled Substrate
- Publication number 20150371987
- Publication date Dec 24, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Yang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSE ARRAYS AND CHARGE STORAGE DEVICES
- Publication number 20140225180
- Publication date Aug 14, 2014
- SanDisk 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
DENSE ARRAYS AND CHARGE STORAGE DEVICES
- Publication number 20140217491
- Publication date Aug 7, 2014
- SanDisk 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED VERTICAL NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
- Publication number 20140167134
- Publication date Jun 19, 2014
- Fudan University
- Pengfei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL STRING BASED ON GATED-DIODE CELL AND MEMORY ARRAY USING...
- Publication number 20130329499
- Publication date Dec 12, 2013
- Jong-Ho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR MEMORY...
- Publication number 20130178014
- Publication date Jul 11, 2013
- Pengfei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LEAKAGE CAPACITOR FOR ANALOG FLOATING-GATE INTEGRATED CIRCUITS
- Publication number 20130130450
- Publication date May 23, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Imran Mahmood Khan
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY AND METHOD FOR FABRICATING THE SAME
- Publication number 20120261740
- Publication date Oct 18, 2012
- Peking University
- Yimao Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Leakage Capacitor for Analog Floating-Gate Integrated Circuits
- Publication number 20120241829
- Publication date Sep 27, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Imran Mahmood Khan
- G11 - INFORMATION STORAGE
Information Patent Application
DENSE ARRAYS AND CHARGE STORAGE DEVICES
- Publication number 20120223380
- Publication date Sep 6, 2012
- SanDisk 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY AND FABRICATION METHOD AND OPERATION METHOD FOR THE SAME
- Publication number 20120113726
- Publication date May 10, 2012
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AMORPHOUS SILICON MAS MEMORY CELL STRUCTU...
- Publication number 20120091458
- Publication date Apr 19, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Mieno Fumitake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRI LAYER METAL OXIDE REWRITABLE NON VOLATILE TWO TERMINAL MEMORY E...
- Publication number 20110278532
- Publication date Nov 17, 2011
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH DENSITY FLASH MEMORY CELL DEVICE, CELL STRING AND FABRICATION...
- Publication number 20110254076
- Publication date Oct 20, 2011
- SNU R&DB Foundation
- Jong-Ho LEE
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED MEMORY DEVICE HAVING COLUMNS HAVING MULTIPLE BIT LINES
- Publication number 20110171803
- Publication date Jul 14, 2011
- Ronald Kakoschke
- G11 - INFORMATION STORAGE
Information Patent Application
DENSE ARRAYS AND CHARGE STORAGE DEVICES
- Publication number 20110156044
- Publication date Jun 30, 2011
- SanDisk 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Layer Reconfigurable Switches
- Publication number 20110121359
- Publication date May 26, 2011
- Jianhua Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE...
- Publication number 20100117048
- Publication date May 13, 2010
- Macronix International Co., Ltd.
- Hsiang-Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL, AND METHOD FOR STORING DATA
- Publication number 20100080068
- Publication date Apr 1, 2010
- Technische Universitat Berlin
- Dieter Bimberg
- G11 - INFORMATION STORAGE
Information Patent Application
Electrically Isolated Gated Diode Nonvolatile Memory
- Publication number 20100039867
- Publication date Feb 18, 2010
- Macronix International Co., Ltd.
- Tien-Fan Ou
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH AMORPHOUS SILICON MAS MEMORY CELL STRUCTU...
- Publication number 20100001271
- Publication date Jan 7, 2010
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fine Particle-containing Body, Fine Particle-containing Body Manufa...
- Publication number 20090252888
- Publication date Oct 8, 2009
- Nobutoshi ARAI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Memory using variable tunnel barrier widths
- Publication number 20090231906
- Publication date Sep 17, 2009
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Application
Dense arrays and charge storage devices
- Publication number 20090173985
- Publication date Jul 9, 2009
- SANDISK 3D LLC
- Thomas H. Lee
- G11 - INFORMATION STORAGE

Charge trapping diodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electrostatic catalysis

Electrostatic catalysis

Electrostatic catalysis

Organic EL device

Dense arrays and charge storage devices

Detector comprising a variable capacitance diode

Dense arrays and charge storage devices

Dense arrays and charge storage devices

Composite group III-V and group IV transistor having a switched sub...

Group III-V HEMT having a selectably floating substrate

Customizable nonlinear electrical devices

Dense arrays and charge storage devices

Dense arrays and charge storage devices

Memory cell string based on gated-diode cell and memory array using...

Memory cell access device having a pn-junction with polycrystalline...

Low leakage capacitor for analog floating-gate integrated circuits

Method for manufacturing a gate-control diode semiconductor memory...

Semiconductor device with amorphous silicon MAS memory cell structu...

Low leakage capacitor for analog floating-gate integrated circuits

Flash memory and fabrication method and operation method for the same

Multi-level flash memory cell capable of fast programming

Method of fabricating a memory device having a memory array includi...

Integrated memory device having columns having multiple bit lines

Fine particle-containing body, fine particle-containing body manufa...

Semiconductor device with amorphous silicon mas memory cell structu...

Electrically isolated gated diode nonvolatile memory

Memory using variable tunnel barrier widths

Memory cell, and method for storing data

Gated diode nonvolatile memory process

Three terminal nonvolatile memory device with vertical gated diode

Patents Applicationslast 30 patents

ELECTROSTATIC CATALYSIS

ELECTROSTATIC CATALYSIS

DENSE ARRAYS AND CHARGE STORAGE DEVICES

DENSE ARRAYS AND CHARGE STORAGE DEVICES

DENSE ARRAYS AND CHARGE STORAGE DEVICES

SEMICONDUCTOR DEVICE

Group III-V HEMT Having a Diode Controlled Substrate

DENSE ARRAYS AND CHARGE STORAGE DEVICES

DENSE ARRAYS AND CHARGE STORAGE DEVICES

SELF-ALIGNED VERTICAL NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

MEMORY CELL STRING BASED ON GATED-DIODE CELL AND MEMORY ARRAY USING...

METHOD FOR MANUFACTURING A GATE-CONTROL DIODE SEMICONDUCTOR MEMORY...

LOW LEAKAGE CAPACITOR FOR ANALOG FLOATING-GATE INTEGRATED CIRCUITS

FLASH MEMORY AND METHOD FOR FABRICATING THE SAME

Low Leakage Capacitor for Analog Floating-Gate Integrated Circuits

DENSE ARRAYS AND CHARGE STORAGE DEVICES

FLASH MEMORY AND FABRICATION METHOD AND OPERATION METHOD FOR THE SAME

SEMICONDUCTOR DEVICE WITH AMORPHOUS SILICON MAS MEMORY CELL STRUCTU...

TRI LAYER METAL OXIDE REWRITABLE NON VOLATILE TWO TERMINAL MEMORY E...

HIGH DENSITY FLASH MEMORY CELL DEVICE, CELL STRING AND FABRICATION...

INTEGRATED MEMORY DEVICE HAVING COLUMNS HAVING MULTIPLE BIT LINES

DENSE ARRAYS AND CHARGE STORAGE DEVICES

Multi-Layer Reconfigurable Switches

MEMORY CELL ACCESS DEVICE HAVING A PN-JUNCTION WITH POLYCRYSTALLINE...

MEMORY CELL, AND METHOD FOR STORING DATA

Electrically Isolated Gated Diode Nonvolatile Memory

SEMICONDUCTOR DEVICE WITH AMORPHOUS SILICON MAS MEMORY CELL STRUCTU...

Fine Particle-containing Body, Fine Particle-containing Body Manufa...

Memory using variable tunnel barrier widths

Dense arrays and charge storage devices