Combination of bipolar and field-effect technology

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H01L21/8248

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/8248Combination of bipolar and field-effect technology

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing an integrated circuit comprising a junctio...
- Patent number 11,830,776
- Issue date Nov 28, 2023
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit comprising a junction field effect transistor
- Patent number 11,342,449
- Issue date May 24, 2022
- STMicroelectronics (Crolles 2) SAS
- Jean Jimenez Martinez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film negative differential resistance and neuronal circuit
- Patent number 10,720,453
- Issue date Jul 21, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thin-film negative differential resistance and neuronal circuit
- Patent number 10,672,804
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods and apparatus for increased holding voltage in silicon cont...
- Patent number 9,576,945
- Issue date Feb 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jam-Wem Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated finFET-BJT replacement metal gate
- Patent number 9,263,583
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit (IC) structure
- Patent number 9,111,765
- Issue date Aug 18, 2015
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic IGBT and diode structure for quai-resonant converters
- Patent number 9,093,286
- Issue date Jul 28, 2015
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for increased holding voltage in silicon cont...
- Patent number 8,963,200
- Issue date Feb 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jam-Wem Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,017,975
- Issue date Sep 13, 2011
- Panasonic Corporation
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with bipolar and J-FET transistors
- Patent number 6,278,143
- Issue date Aug 21, 2001
- Sony Corporation
- Hirokazu Ejiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a bipolar transistor
- Patent number 6,144,077
- Issue date Nov 7, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Yukio Maki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar semiconductor device
- Patent number 5,912,479
- Issue date Jun 15, 1999
- Sony Corporation
- Hideki Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor compatible with CMOS processes
- Patent number 5,793,085
- Issue date Aug 11, 1998
- SGS Thomson Microelectronics S.r.l.
- Bruno Vajana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making JFET structures for semiconductor devices with com...
- Patent number 5,652,153
- Issue date Jul 29, 1997
- Harris Corporation
- James D. Beasom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of formation of bipolar transistor having reduced parasitic...
- Patent number 5,624,854
- Issue date Apr 29, 1997
- Motorola Inc.
- Robert C. Taft
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,504,363
- Issue date Apr 2, 1996
- Motorola Inc.
- Robert C. Taft
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing an offset gate structure thin film transi...
- Patent number 5,488,005
- Issue date Jan 30, 1996
- Samsung Electronics Co., Ltd.
- Min-Ku Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having silicon islands
- Patent number 5,466,621
- Issue date Nov 14, 1995
- Hitachi, Ltd.
- Dai Hisamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing integrated quasi-complementary bipolar transis...
- Patent number 5,391,504
- Issue date Feb 21, 1995
- Texas Instruments Incorporated
- Darrell Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor integrated circuit device
- Patent number 5,356,821
- Issue date Oct 18, 1994
- Kabushiki Kaisha Toshiba
- Hiroshi Naruse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing Bi-CMOS transistor devices
- Patent number 5,352,617
- Issue date Oct 4, 1994
- Sony Corporation
- Hiroyuki Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating of semiconductor device by forming two electr...
- Patent number 5,348,907
- Issue date Sep 20, 1994
- NEC Corporation
- Takahisa Migita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device and a semiconductor...
- Patent number 5,346,834
- Issue date Sep 13, 1994
- Hitachi, Ltd.
- Dai Hisamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor integrated circuit device
- Patent number 5,342,480
- Issue date Aug 30, 1994
- Hitachi, Ltd.
- Hirotaka Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor integrated circuit device h...
- Patent number 5,280,188
- Issue date Jan 18, 1994
- Kabushiki Kaisha Toshiba
- Hiroshi Iwasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of a semiconductor device having a reduced para...
- Patent number 5,270,249
- Issue date Dec 14, 1993
- Fujitsu Limited
- Hiroyuki Fukuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,254,864
- Issue date Oct 19, 1993
- Sony Corporation
- Tetsuo Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device comprising a control...
- Patent number 5,246,871
- Issue date Sep 21, 1993
- SGS Thomson Microelectronics S.r.l.
- Raffaele Zambrano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit that combines multi-epitaxial power transistors...
- Patent number 5,153,697
- Issue date Oct 6, 1992
- Texas Instruments Incorporated
- Dan M. Mosher
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT COMPRISING A JUNCTION FIELD EFFECT TRANSISTOR (J...
- Publication number 20220254905
- Publication date Aug 11, 2022
- STMicroelectronics (Crolles 2) SAS
- Jean JIMENEZ MARTINEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A JFET TRANSISTOR AND METHOD FOR MANU...
- Publication number 20210151559
- Publication date May 20, 2021
- STMicroelectronics (Crolles 2) SAS
- Jean JIMENEZ MARTINEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Apparatus for Increased Holding Voltage in Silicon Cont...
- Publication number 20150137174
- Publication date May 21, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jam-Wem Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20150132895
- Publication date May 14, 2015
- Toyota Jidosha Kabushiki Kaisha
- Takuma KAMIJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC IGBT AND DIODE STRUCTURE FOR QUASI-RESONANT CONVERTERS
- Publication number 20150035005
- Publication date Feb 5, 2015
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT (IC) STRUCTURE
- Publication number 20140138749
- Publication date May 22, 2014
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Apparatus for Increased Holding Voltage in Silicon Cont...
- Publication number 20130341676
- Publication date Dec 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jam-Wem Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090230431
- Publication date Sep 17, 2009
- PANASONIC CORPORATION
- Keiichi MURAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bicmos Compatible Jfet Device and Method of Manufacturing Same
- Publication number 20080258182
- Publication date Oct 23, 2008
- Koninklijke Philips Electronics N.V.
- Prabhat Agarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Signaling circuit and method for integrated circuit devices and sys...
- Publication number 20080237657
- Publication date Oct 2, 2008
- DSM Solution, Inc.
- Ashok K. Kapoor
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Combination of bipolar and field-effect technology

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for manufacturing an integrated circuit comprising a junctio...

Integrated circuit comprising a junction field effect transistor

Thin-film negative differential resistance and neuronal circuit

Thin-film negative differential resistance and neuronal circuit

Methods and apparatus for increased holding voltage in silicon cont...

Integrated finFET-BJT replacement metal gate

Integrated circuit (IC) structure

Monolithic IGBT and diode structure for quai-resonant converters

Methods and apparatus for increased holding voltage in silicon cont...

Semiconductor device

Semiconductor device with bipolar and J-FET transistors

Semiconductor device comprising a bipolar transistor

Heterojunction bipolar semiconductor device

Bipolar transistor compatible with CMOS processes

Method of making JFET structures for semiconductor devices with com...

Method of formation of bipolar transistor having reduced parasitic...

Semiconductor device

Process for manufacturing an offset gate structure thin film transi...

Method of manufacturing a semiconductor device having silicon islands

Method for producing integrated quasi-complementary bipolar transis...

Method for manufacturing semiconductor integrated circuit device

Method for manufacturing Bi-CMOS transistor devices

Method of fabricating of semiconductor device by forming two electr...

Method for manufacturing a semiconductor device and a semiconductor...

Method of manufacturing a semiconductor integrated circuit device

Method of manufacturing a semiconductor integrated circuit device h...

Fabrication process of a semiconductor device having a reduced para...

Semiconductor device

Method of manufacturing a semiconductor device comprising a control...

Integrated circuit that combines multi-epitaxial power transistors...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT COMPRISING A JUNCTION FIELD EFFECT TRANSISTOR (J...

INTEGRATED CIRCUIT COMPRISING A JFET TRANSISTOR AND METHOD FOR MANU...

Methods and Apparatus for Increased Holding Voltage in Silicon Cont...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

MONOLITHIC IGBT AND DIODE STRUCTURE FOR QUASI-RESONANT CONVERTERS

INTEGRATED CIRCUIT (IC) STRUCTURE

Methods and Apparatus for Increased Holding Voltage in Silicon Cont...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Bicmos Compatible Jfet Device and Method of Manufacturing Same

Signaling circuit and method for integrated circuit devices and sys...