Complex metal oxides

Industry

CPC
H01L45/147

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/147Complex metal oxides

Industries

Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell and method of forming the same
- Patent number 11,659,779
- Issue date May 23, 2023
- Agency for Science, Technology and Research
- Wen Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical nonvolatile memory device including memory cell string
- Patent number 11,631,718
- Issue date Apr 18, 2023
- Samsung Electronics Co., Ltd.
- Jinhong Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
System and device including memristor material
- Patent number 11,631,808
- Issue date Apr 18, 2023
- Rockwell Collins, Inc.
- Kyle B. Snyder
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device
- Patent number 11,631,812
- Issue date Apr 18, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PV device having improved overall efficiency
- Patent number 11,626,523
- Issue date Apr 11, 2023
- Siemens Energy Global GmbH & Co. KG
- Maximilian Fleischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,621,298
- Issue date Apr 4, 2023
- SK hynix Inc.
- Sung Kil Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and operating method of the same
- Patent number 11,600,774
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector and non-volatile storage device
- Patent number 11,600,773
- Issue date Mar 7, 2023
- Kioxia Corporation
- Toshihiko Nagase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive amorphous oxide contact layers
- Patent number 11,600,775
- Issue date Mar 7, 2023
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material for resistive random access memory
- Patent number 11,588,102
- Issue date Feb 21, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including variable resistance layer
- Patent number 11,538,859
- Issue date Dec 27, 2022
- Samsung Electronics Co., Ltd.
- Kyunghwan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,527,714
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selector element with ballast for low voltage bipolar memory devices
- Patent number 11,522,011
- Issue date Dec 6, 2022
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having an oxide barrier layer
- Patent number 11,508,905
- Issue date Nov 22, 2022
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 11,502,249
- Issue date Nov 15, 2022
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase transformation electronic device
- Patent number 11,502,253
- Issue date Nov 15, 2022
- Tsinghua University
- Pu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,495,292
- Issue date Nov 8, 2022
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Reliable resistive random access memory
- Patent number 11,489,118
- Issue date Nov 1, 2022
- International Business Machines Corporation
- Baozhen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device having a resistance change layer and a pl...
- Patent number 11,482,667
- Issue date Oct 25, 2022
- SK Hynix Inc.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM structure
- Patent number 11,482,668
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally sensitive ionic redox transistor
- Patent number 11,450,802
- Issue date Sep 20, 2022
- National Technology & Engineering Solutions of Sandia, LLC
- Yiyang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,430,953
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Huei-Tsz Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device, memory integrated circuit and manufacturing method t...
- Patent number 11,417,839
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device of three-dimensional structure including...
- Patent number 11,417,707
- Issue date Aug 16, 2022
- SK hynix Inc.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned repeatedly stackable 3D vertical RRAM
- Patent number 11,404,482
- Issue date Aug 2, 2022
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stack of horizontally extending and vertically overlapping features...
- Patent number 11,393,748
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory selector and memory device including same
- Patent number 11,374,058
- Issue date Jun 28, 2022
- Imec VZW
- Shairfe Muhammad Salahuddin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240237565
- Publication date Jul 11, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
PIEZOELECTRIC MEMORY
- Publication number 20240147873
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240138275
- Publication date Apr 25, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED PLANAR CAPACITOR...
- Publication number 20230298905
- Publication date Sep 21, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED TRENCH CAPACITOR...
- Publication number 20230246064
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...
- Publication number 20230246063
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...
- Publication number 20230246062
- Publication date Aug 3, 2023
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR
- Publication number 20230231004
- Publication date Jul 20, 2023
- Samsung Electronics Co., Ltd.
- Byunghoon NA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20230090628
- Publication date Mar 23, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chun-Chieh MO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION METHOD OF SILICON-BASED MOLECULAR BEAM HETEROEPITAXY MA...
- Publication number 20230081176
- Publication date Mar 16, 2023
- Hebei University
- Xiaobing YAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VARIABLE RESISTANCE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APP...
- Publication number 20230079071
- Publication date Mar 16, 2023
- Kabushiki Kaisha Toshiba
- Takao MARUKAME
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RRAM Materials and Devices
- Publication number 20230048493
- Publication date Feb 16, 2023
- Australian Advanced Materials Pty Ltd
- Dewei Chu
- C01 - INORGANIC CHEMISTRY
Information Patent Application
COMPLEX OXIDE MEMRISTIVE MATERIAL, MEMRISTOR COMPRISING SUCH MATERI...
- Publication number 20230049235
- Publication date Feb 16, 2023
- TURUN YLIOPISTO
- Petriina PATURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...
- Publication number 20230024213
- Publication date Jan 26, 2023
- KIOXIA Corporation
- Kikuko SUGIMAE
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20230027508
- Publication date Jan 26, 2023
- United Microelectronics Corp.
- Kai Jiun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CROSS-POINT ARRAYS FOR ULTRA-HIGH-DENSITY MEMORY APPLICATIONS
- Publication number 20220392956
- Publication date Dec 8, 2022
- Unity Semiconductor Corporation
- Bruce Lynn Bateman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20220376175
- Publication date Nov 24, 2022
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Huei-Tsz WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURE
- Publication number 20220367805
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ACTIVE LAYER WITH VARIABLE RESISTANCE
- Publication number 20220352461
- Publication date Nov 3, 2022
- SK hynix Inc.
- Won Tae KOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD T...
- Publication number 20220336741
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stack of Horizontally Extending and Vertically Overlapping Features...
- Publication number 20220302015
- Publication date Sep 22, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING LAYER SCHEME TO ENHANCE RRAM PERFORMANCE
- Publication number 20220302381
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20220271090
- Publication date Aug 25, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Sunil Kumar SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY
- Publication number 20220238802
- Publication date Jul 28, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CELL USING AN INTERFACIAL TRANSITION METAL COMPOUN...
- Publication number 20220223788
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Wen-Hao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Having Both Volatile and Non-Volatile Function...
- Publication number 20220199160
- Publication date Jun 23, 2022
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY (RRAM) CELL WITH RECESSED BOTTOM ELE...
- Publication number 20220190240
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuan-Tai Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FAC...
- Publication number 20220190036
- Publication date Jun 16, 2022
- Hefei Reliance Memory Limited
- Jian WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND DEVICE INCLUDING MEMRISTOR MATERIAL
- Publication number 20220181548
- Publication date Jun 9, 2022
- Rockwell Collins, Inc.
- Kyle B. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DIODE MEMORY DEVICE
- Publication number 20220173310
- Publication date Jun 2, 2022
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS

Complex metal oxides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Two-terminal reversibly switchable memory device

Memory cell and method of forming the same

Vertical nonvolatile memory device including memory cell string

System and device including memristor material

Electronic device

PV device having improved overall efficiency

Electronic device and method for fabricating the same

Resistive random access memory device

Nonvolatile memory device and operating method of the same

Selector and non-volatile storage device

Conductive amorphous oxide contact layers

Semiconductor material for resistive random access memory

Semiconductor memory device including variable resistance layer

Resistive random access memory device

Selector element with ballast for low voltage bipolar memory devices

Resistive memory device having an oxide barrier layer

Memory element with a reactive metal layer

Phase transformation electronic device

Resistive random access memory device with three-dimensional cross-...

Reliable resistive random access memory

Nonvolatile memory device having a resistance change layer and a pl...

RRAM structure

Thermally sensitive ionic redox transistor

Resistive random access memory device

Memory device, memory integrated circuit and manufacturing method t...

Nonvolatile memory device of three-dimensional structure including...

Self-aligned repeatedly stackable 3D vertical RRAM

Stack of horizontally extending and vertically overlapping features...

Memory selector and memory device including same

Patents Applicationslast 30 patents

ANALOG PROGRAMMABLE RESISTIVE MEMORY

PIEZOELECTRIC MEMORY

ANALOG PROGRAMMABLE RESISTIVE MEMORY

METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED PLANAR CAPACITOR...

METHOD OF FABRICATING A PEROVSKITE-MATERIAL BASED TRENCH CAPACITOR...

RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...

RAPID THERMAL ANNEALING (RTA) METHODOLOGIES FOR INTEGRATION OF PERO...

CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

PREPARATION METHOD OF SILICON-BASED MOLECULAR BEAM HETEROEPITAXY MA...

VARIABLE RESISTANCE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APP...

RRAM Materials and Devices

COMPLEX OXIDE MEMRISTIVE MATERIAL, MEMRISTOR COMPRISING SUCH MATERI...

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...

RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

VERTICAL CROSS-POINT ARRAYS FOR ULTRA-HIGH-DENSITY MEMORY APPLICATIONS

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

RRAM STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING ACTIVE LAYER WITH VARIABLE RESISTANCE

MEMORY DEVICE, MEMORY INTEGRATED CIRCUIT AND MANUFACTURING METHOD T...

Stack of Horizontally Extending and Vertically Overlapping Features...

SWITCHING LAYER SCHEME TO ENHANCE RRAM PERFORMANCE

VERTICAL MEMORY DEVICES

DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY

RESISTIVE MEMORY CELL USING AN INTERFACIAL TRANSITION METAL COMPOUN...

Semiconductor Memory Having Both Volatile and Non-Volatile Function...

RESISTIVE RANDOM-ACCESS MEMORY (RRAM) CELL WITH RECESSED BOTTOM ELE...

MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FAC...

SYSTEM AND DEVICE INCLUDING MEMRISTOR MATERIAL

INTEGRATED DIODE MEMORY DEVICE