comprising a gate to body connection

Industry

CPC
H01L29/783

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/783comprising a gate to body connection

Industries

Patents Grantslast 30 patents

Information Patent Grant
Polarization enhancement structure for enlarging memory window
- Patent number 12,176,433
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 12,178,053
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with profiled work-function metal gate electro...
- Patent number 12,176,251
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Da-Yuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around device with trimmed channel and dipoled dielectric...
- Patent number 12,170,231
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cerium-doped ferroelectric materials and related devices and methods
- Patent number 12,166,098
- Issue date Dec 10, 2024
- The Board of Trustees of the Leland Stanford Junior University
- Paul C. McIntyre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 12,166,121
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM MFM structure with selective electrode etch
- Patent number 12,167,611
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device and associated memory...
- Patent number 12,166,089
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Nuo Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,166,123
- Issue date Dec 10, 2024
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming three-dimensional memory devices
- Patent number 12,167,608
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 12,167,609
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Min-Kun Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for a ferroelectric field-effect transistor and related...
- Patent number 12,159,935
- Issue date Dec 3, 2024
- GlobalFoundries Dresden Module One Limited Liability Company & KG
- Halid Mulaosmanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with ferroelectric layer
- Patent number 12,160,994
- Issue date Dec 3, 2024
- Kioxia Corporation
- Tsunehiro Ino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carrier barrier layer for tuning a threshold voltage of a ferroelec...
- Patent number 12,154,965
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Rainer Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, ternary inverter comprising same, and transistor manufa...
- Patent number 12,154,950
- Issue date Nov 26, 2024
- UNIST (Ulsan National Institute of Science and Technology)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diffusion suppression and LDD implants an...
- Patent number 12,154,901
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,154,986
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused field-effect transistor
- Patent number 12,154,972
- Issue date Nov 26, 2024
- NEXCHIP SEMICONDUCTOR CORPORATION
- Menghui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an integrated circuit with drain well having multi...
- Patent number 12,148,827
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zheng Long Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including ferroelectri...
- Patent number 12,148,829
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wilman Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate metal-ferroelectric-metal-insulator-semiconductor field...
- Patent number 12,150,309
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,148,828
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random-access memory cell
- Patent number 12,150,310
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect measurement method
- Patent number 12,142,537
- Issue date Nov 12, 2024
- National Tsing Hua University
- Burn-Jeng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,650
- Issue date Nov 12, 2024
- Samsung Electronics Co., Ltd.
- Sang Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electronic device
- Patent number 12,136,465
- Issue date Nov 5, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Takeshi Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,136,659
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND...
- Publication number 20240428838
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Sijung YOO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
USER MODEL-BASED DATA LOSS PREVENTION
- Publication number 20240430308
- Publication date Dec 26, 2024
- ARMORBLOX LLC
- Chetan Anand
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION...
- Publication number 20240428859
- Publication date Dec 26, 2024
- Micron Technology, Inc.
- Michael A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FEFET DEVICE
- Publication number 20240431116
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Chang Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VECTOR FRIENDLY INSTRUCTION FORMAT AND EXECUTION THEREOF
- Publication number 20240427600
- Publication date Dec 26, 2024
- Intel Corporation
- Robert C. VALENTINE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SPLIT-GATE MOSFET
- Publication number 20240421224
- Publication date Dec 19, 2024
- NEXPERIA B.V.
- Jie Qi Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME
- Publication number 20240421210
- Publication date Dec 19, 2024
- Shanghai Huali Integrated Circuit Corporation
- Zhi TIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Performance LDMOS Structures
- Publication number 20240421225
- Publication date Dec 19, 2024
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Anti-Fuse Device by Ferroelectric Characteristic
- Publication number 20240413078
- Publication date Dec 12, 2024
- NANYA TECHNOLOGY CORPORATION
- YI-JU CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Switching Device
- Publication number 20240413243
- Publication date Dec 12, 2024
- MURATA MANUFACTURING CO., LTD.
- Abhijeet Paul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240414925
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Seunghee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ESD PROTECTION STRUCTURE AND METHOD OF MA...
- Publication number 20240405015
- Publication date Dec 5, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE
- Publication number 20240405761
- Publication date Dec 5, 2024
- INNOVISION SEMICONDUCTOR INC
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...
- Publication number 20240407174
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tao Yang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...
- Publication number 20240405094
- Publication date Dec 5, 2024
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED CHANNEL SEMICONDUCTOR DEVICE INCLUDING ENERGY BARRIER MODULA...
- Publication number 20240405125
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Jack G. Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION LAYER UNDER CONTACT
- Publication number 20240395623
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Wei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING PROGRAMMABLE MEMORY
- Publication number 20240397712
- Publication date Nov 28, 2024
- UNITED MICROELECTRONICS CORP.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-FERROELECTRIC MEMORY DEVICE
- Publication number 20240397725
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun-Chieh Lu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME
- Publication number 20240397726
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Ilho Myeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER
- Publication number 20240397728
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SNAPBACK ELECTROSTATIC DISCHARGE (ESD) CIRCUIT, SYSTEM AND METHOD O...
- Publication number 20240395799
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Lin HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A VERTICAL MEMORY DEVICE AND AN ELEC...
- Publication number 20240397727
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Ilho Myeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FORMING METHOD THEREOF
- Publication number 20240397729
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL POWER SEMICONDUCTOR DEVICE
- Publication number 20240395930
- Publication date Nov 28, 2024
- University of Electronic Science and Technology of China
- Ming QIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPAROUND GATE STRUCTURE
- Publication number 20240395932
- Publication date Nov 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John L. LEMON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240395823
- Publication date Nov 28, 2024
- RENESAS ELECTRONICS CORPORATION
- Takaaki TSUNOMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS
- Publication number 20240395933
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Miin-Jang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240387689
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Hung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20240389334
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS

comprising a gate to body connection

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Polarization enhancement structure for enlarging memory window

Memory device and method of forming the same

Method of forming a transistor device with a gate structure having...

Semiconductor device with profiled work-function metal gate electro...

Gate-all-around device with trimmed channel and dipoled dielectric...

Cerium-doped ferroelectric materials and related devices and methods

Integrated circuit structure

Field-effect transistor (FET) with self-aligned ferroelectric capac...

FeRAM MFM structure with selective electrode etch

Method of manufacturing semiconductor device and associated memory...

Semiconductor device

Methods of forming three-dimensional memory devices

Semiconductor structure and method of forming the same

Structures for a ferroelectric field-effect transistor and related...

Memory device with ferroelectric layer

Carrier barrier layer for tuning a threshold voltage of a ferroelec...

Transistor, ternary inverter comprising same, and transistor manufa...

Semiconductor device with diffusion suppression and LDD implants an...

Semiconductor device and method

Diffused field-effect transistor

Method of making an integrated circuit with drain well having multi...

Method of manufacturing semiconductor device including ferroelectri...

Double gate metal-ferroelectric-metal-insulator-semiconductor field...

Semiconductor device and manufacturing method thereof

Ferroelectric random-access memory cell

Defect measurement method

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Semiconductor device

Semiconductor device and electronic device

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Patents Applicationslast 30 patents

SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND...

USER MODEL-BASED DATA LOSS PREVENTION

INTERLEAVED STRING DRIVERS, STRING DRIVER WITH NARROW ACTIVE REGION...

FEFET DEVICE

VECTOR FRIENDLY INSTRUCTION FORMAT AND EXECUTION THEREOF

SPLIT-GATE MOSFET

HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME

High-Performance LDMOS Structures

Anti-Fuse Device by Ferroelectric Characteristic

High Voltage Switching Device

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH ESD PROTECTION STRUCTURE AND METHOD OF MA...

GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF AND MEMORY SY...

METHOD OF OPERATING A POWER TRANSISTOR FORMED BY A PLURALITY OF TRA...

BURIED CHANNEL SEMICONDUCTOR DEVICE INCLUDING ENERGY BARRIER MODULA...

SEMICONDUCTOR DEVICE WITH ISOLATION LAYER UNDER CONTACT

METHOD FOR FORMING PROGRAMMABLE MEMORY

ANTI-FERROELECTRIC MEMORY DEVICE

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME

FERROELECTRIC MEMORY DEVICE WITH SEMICONDUCTOR LAYER

SNAPBACK ELECTROSTATIC DISCHARGE (ESD) CIRCUIT, SYSTEM AND METHOD O...

SEMICONDUCTOR DEVICE INCLUDING A VERTICAL MEMORY DEVICE AND AN ELEC...

MEMORY DEVICE AND FORMING METHOD THEREOF

LATERAL POWER SEMICONDUCTOR DEVICE

WRAPAROUND GATE STRUCTURE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

FERROELECTRIC MFM INDUCTOR AND RELATED CIRCUITS

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

METHODS OF FORMING THREE-DIMENSIONAL MEMORY DEVICES