comprising multi-terminal selection components

Industry

CPC
H01L27/2436

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/2436comprising multi-terminal selection components

Industries

Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D micro display device and structure
- Patent number 11,682,683
- Issue date Jun 20, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory layout for reduced line loading
- Patent number 11,678,494
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicon over insulator two-transistor one-resistor in-series resist...
- Patent number 11,659,720
- Issue date May 23, 2023
- Weebit Nano Ltd.
- Lior Dagan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure with data storage structure and method for...
- Patent number 11,653,503
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Woan-Yun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM device structure and manufacturing method
- Patent number 11,653,581
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change material-based XOR logic gates
- Patent number 11,653,578
- Issue date May 16, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell including programmable resistors with transistor compon...
- Patent number 11,646,079
- Issue date May 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Der Chih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile tunable capacitive processing unit
- Patent number 11,647,684
- Issue date May 9, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistors (FeFETs) having band-enginee...
- Patent number 11,640,995
- Issue date May 2, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and methods for forming memory cells
- Patent number 11,641,789
- Issue date May 2, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,637,240
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsing-Lien Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device
- Patent number 11,631,812
- Issue date Apr 18, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,631,719
- Issue date Apr 18, 2023
- Kioxia Corporation
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory devices and methods of fabrication
- Patent number 11,621,395
- Issue date Apr 4, 2023
- Intel Corporation
- Nathan Strutt
- G11 - INFORMATION STORAGE
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,616,004
- Issue date Mar 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crossbar array circuit with parallel grounding lines
- Patent number 11,610,942
- Issue date Mar 21, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable non-volatile memory cell on glass substrate
- Patent number 11,610,103
- Issue date Mar 21, 2023
- eMemory Technology Inc.
- Wein-Town Sun
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for forming RRAM with a barrier layer
- Patent number 11,611,038
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, integrated circuit, and manufacturing method of transistor
- Patent number 11,605,740
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 11,605,672
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce 3D semiconductor devices and structures with memory
- Patent number 11,600,667
- Issue date Mar 7, 2023
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive amorphous oxide contact layers
- Patent number 11,600,775
- Issue date Mar 7, 2023
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,594,473
- Issue date Feb 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer in programmable metallization cell
- Patent number 11,594,678
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material for resistive random access memory
- Patent number 11,588,102
- Issue date Feb 21, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to effectively suppress heat dissipation in PCRAM devices
- Patent number 11,588,106
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,588,107
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY
- Publication number 20240215462
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED ReRAM WITH BACKSIDE CONTACT
- Publication number 20240196627
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ARRAY STRUCTURE HAVING BIT LINE FOR REDUCING SIGNAL RES...
- Publication number 20240196629
- Publication date Jun 13, 2024
- GLOBAL FOUNDRIES U.S. Inc.
- Sandeep PURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS
- Publication number 20240130142
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE MRAM WITH FRONTSIDE DEVICES
- Publication number 20240114699
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
- Publication number 20240114807
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pillar Based Memory (MRAM) Embedded within the Buried Power Rail wi...
- Publication number 20240090235
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Wu-Chang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER
- Publication number 20240090352
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED METAL SIGNAL RAIL FOR MEMORY ARRAYS
- Publication number 20240079326
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Biswanath Senapati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074334
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE
- Publication number 20240049470
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Jun Wu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND SEMICONDUCTOR DIE HAVING THE MEMORY DEVICE
- Publication number 20240049477
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A MEMORY DEVICE AT A BACKSIDE OF A WAFER SUBSTRA...
- Publication number 20240023463
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...
- Publication number 20240016072
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hengyuan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR INTEGRATED WITH MEMORY ELEMENT OF MEMORY CELL
- Publication number 20230422519
- Publication date Dec 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- G11 - INFORMATION STORAGE
Information Patent Application
CMOS-COMPATIBLE RRAM DEVICES
- Publication number 20230422641
- Publication date Dec 28, 2023
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20230397514
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230389338
- Publication date Nov 30, 2023
- SK HYNIX INC.
- In Ku KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING T...
- Publication number 20230389449
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230377644
- Publication date Nov 23, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiaoguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT ARCHITECTURE FOR PCRAM
- Publication number 20230380194
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230380191
- Publication date Nov 23, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Xiaoguang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...
- Publication number 20230371407
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Watson Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE TERMINAL MEMORY CELLS AND METHOD OF MAKING THE SAME
- Publication number 20230320104
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- JIA RUI THONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY MEMORY WITH STACKED NANOSHEET TRANSISTORS
- Publication number 20230309324
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL 1T1R STRUCTURE FOR EMBEDDED MEMORY
- Publication number 20230309325
- Publication date Sep 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230301119
- Publication date Sep 21, 2023
- KIOXIA Corporation
- Kensuke TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA DEVICE STRUCTURE
- Publication number 20230292635
- Publication date Sep 14, 2023
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
NEURAL NETWORK SYSTEM, HIGH DENSITY EMBEDDED-ARTIFICIAL SYNAPTIC EL...
- Publication number 20230289577
- Publication date Sep 14, 2023
- National Tsing Hua University
- Ya-Chin KING
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NEURAL NETWORK SYSTEM, HIGH EFFICIENCY EMBEDDED-ARTIFICIAL SYNAPTIC...
- Publication number 20230292533
- Publication date Sep 14, 2023
- National Tsing Hua University
- Ya-Chin KING
- G06 - COMPUTING CALCULATING COUNTING

comprising multi-terminal selection components

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

3D micro display device and structure

Memory layout for reduced line loading

Two-terminal reversibly switchable memory device

Silicon over insulator two-transistor one-resistor in-series resist...

Semiconductor structure with data storage structure and method for...

RRAM device structure and manufacturing method

Phase-change material-based XOR logic gates

Memory cell including programmable resistors with transistor compon...

Nonvolatile tunable capacitive processing unit

Ferroelectric field effect transistors (FeFETs) having band-enginee...

Memory cells and methods for forming memory cells

Semiconductor structure and method for forming the same

Electronic device

Semiconductor memory device

Resistive random-access memory devices and methods of fabrication

3D semiconductor device and structure with metal layers and a conne...

Crossbar array circuit with parallel grounding lines

Resistive random access memory device

One time programmable non-volatile memory cell on glass substrate

Method for forming RRAM with a barrier layer

Transistor, integrated circuit, and manufacturing method of transistor

Steep-switch field effect transistor with integrated bi-stable resi...

Method to produce 3D semiconductor devices and structures with memory

Conductive amorphous oxide contact layers

3D semiconductor device and structure with metal layers and a conne...

Diffusion barrier layer in programmable metallization cell

Semiconductor material for resistive random access memory

Method to effectively suppress heat dissipation in PCRAM devices

Integrated circuit structure

Patents Applicationslast 30 patents

MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY

EMBEDDED ReRAM WITH BACKSIDE CONTACT

MEMORY CELL ARRAY STRUCTURE HAVING BIT LINE FOR REDUCING SIGNAL RES...

RESISTIVE RANDOM-ACCESS MEMORY STRUCTURES WITH STACKED TRANSISTORS

BACKSIDE MRAM WITH FRONTSIDE DEVICES

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

Pillar Based Memory (MRAM) Embedded within the Buried Power Rail wi...

RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER

BURIED METAL SIGNAL RAIL FOR MEMORY ARRAYS

PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE

MEMORY DEVICE AND SEMICONDUCTOR DIE HAVING THE MEMORY DEVICE

METHOD FOR FORMING A MEMORY DEVICE AT A BACKSIDE OF A WAFER SUBSTRA...

MEMORY CELL, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF MEMORY...

CAPACITOR INTEGRATED WITH MEMORY ELEMENT OF MEMORY CELL

CMOS-COMPATIBLE RRAM DEVICES

TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL

RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

ENCAPSULATED PHASE CHANGE MATERIAL SWITCH AND METHODS FOR FORMING T...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

CROSS-POINT ARCHITECTURE FOR PCRAM

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...

THREE TERMINAL MEMORY CELLS AND METHOD OF MAKING THE SAME

HIGH DENSITY MEMORY WITH STACKED NANOSHEET TRANSISTORS

VERTICAL 1T1R STRUCTURE FOR EMBEDDED MEMORY

MEMORY DEVICE

RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA DEVICE STRUCTURE

NEURAL NETWORK SYSTEM, HIGH DENSITY EMBEDDED-ARTIFICIAL SYNAPTIC EL...

NEURAL NETWORK SYSTEM, HIGH EFFICIENCY EMBEDDED-ARTIFICIAL SYNAPTIC...