Contacts of silicides

Industry

CPC
Y10S148/019

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/019Contacts of silicides

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating semiconductor device
- Patent number 7,037,371
- Issue date May 2, 2006
- Matsushita Electric Industrial Co., Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with polycide structure...
- Patent number 6,074,925
- Issue date Jun 13, 2000
- NEC Corporation
- Fumiki Aisou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for self-aligned local interconnects and conta...
- Patent number 5,899,742
- Issue date May 4, 1999
- Shih-Wei Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of filling a contact hole in a semiconductor device using ve...
- Patent number 5,837,608
- Issue date Nov 17, 1998
- Hyundai Electronics Industries Co.,
- Kyeong Keun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised silicided source/drain electrode formation with reduced subs...
- Patent number 5,830,775
- Issue date Nov 3, 1998
- Sharp Microelectronics Technology, Inc.
- Jer-shen Maa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a raised source/drain MOSFET
- Patent number 5,824,586
- Issue date Oct 20, 1998
- Advanced Micro Devices, Inc.
- Donald L. Wollesen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of silicided junctions in deep submicron MOSFETS by defec...
- Patent number 5,780,929
- Issue date Jul 14, 1998
- Siemens Aktiengesellschaft
- Heinrich Zeininger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised source/drain with silicided contacts for semiconductor devices
- Patent number 5,760,451
- Issue date Jun 2, 1998
- International Business Machines Corporation
- Anthony J. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,721,175
- Issue date Feb 24, 1998
- Kabushiki Kaisha Toshiba
- Iwao Kunishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator device interconnects
- Patent number 5,587,597
- Issue date Dec 24, 1996
- The United States of America as represented by the Secretary of the Navy
- Ronald E. Reedy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming titanium silicide local interconnect
- Patent number 5,543,361
- Issue date Aug 6, 1996
- AT&T Global Information Solutions Company
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming low resistance contacts at the junction between r...
- Patent number 5,541,455
- Issue date Jul 30, 1996
- SGS-Thomson Microelectronics, Inc.
- Robert L. Hodges
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for connecting an electrode to a semiconductor de...
- Patent number 5,512,516
- Issue date Apr 30, 1996
- Fujitsu Limited
- Kenji Nishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming stable local interconnect/active area silicide...
- Patent number 5,451,545
- Issue date Sep 19, 1995
- Advanced Micro Devices, Inc.
- Seshadri Ramaswami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming titanium silicide local interconnect
- Patent number 5,443,996
- Issue date Aug 22, 1995
- AT&T Global Information Solutions Company
- Steven S. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming low resistance contacts at the junction between r...
- Patent number 5,432,129
- Issue date Jul 11, 1995
- SGS-Thomson Microelectronics, Inc.
- Robert L. Hodges
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating complementary inverter circuit having multi-...
- Patent number 5,418,179
- Issue date May 23, 1995
- Yamaha Corporation
- Tadahiko Hotta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making silicided contacts for semiconductor devices
- Patent number 5,409,853
- Issue date Apr 25, 1995
- International Business Machines Corporation
- Anthony J. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a metal silicide interconnect in an integrated c...
- Patent number 5,405,806
- Issue date Apr 11, 1995
- Motorola Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium implant for use with ultra-shallow junctions
- Patent number 5,401,674
- Issue date Mar 28, 1995
- Advanced Micro Devices
- Mohammed Anjum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum metallization method
- Patent number 5,397,744
- Issue date Mar 14, 1995
- Sony Corporation
- Hirofumi Sumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming local interconnect for integrated circuits
- Patent number 5,391,520
- Issue date Feb 21, 1995
- SGS-Thomson Microelectronics, Inc.
- Fusen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating low resistance contacts of semiconductor device
- Patent number 5,391,521
- Issue date Feb 21, 1995
- Hyundai Electronics Industries Co., Ltd.
- Sang Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for connecting an electrode to a semiconductor
- Patent number 5,384,485
- Issue date Jan 24, 1995
- Fujitsu Limited
- Kenji Nishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating titanium silicide contacts
- Patent number 5,369,055
- Issue date Nov 29, 1994
- Hyundai Electronics Industries Co., Ltd.
- Ji H. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stable local interconnect/active area silicide structure for VLSI a...
- Patent number 5,365,111
- Issue date Nov 15, 1994
- Advanced Micro Devices, Inc.
- Seshadri Ramaswami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of silicided junctions in deep sub-micron MOSFETs by defe...
- Patent number 5,344,793
- Issue date Sep 6, 1994
- Siemens Aktiengesellschaft
- Heinrich Zeininger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide interconnection with Schottky barrier diode isolation
- Patent number 5,336,637
- Issue date Aug 9, 1994
- International Business Machines Corporation
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a polycide st...
- Patent number 5,332,692
- Issue date Jul 26, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Kenji Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-capped titanium silicide formation
- Patent number 5,326,724
- Issue date Jul 5, 1994
- Texas Instruments Incorporated
- Che-Chia Wei
- H01 - BASIC ELECTRIC ELEMENTS

Contacts of silicides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for fabricating semiconductor device

Method for fabricating semiconductor device with polycide structure...

Manufacturing method for self-aligned local interconnects and conta...

Method of filling a contact hole in a semiconductor device using ve...

Raised silicided source/drain electrode formation with reduced subs...

Method of manufacturing a raised source/drain MOSFET

Formation of silicided junctions in deep submicron MOSFETS by defec...

Raised source/drain with silicided contacts for semiconductor devices

Method of manufacturing a semiconductor device

Semiconductor-on-insulator device interconnects

Process for forming titanium silicide local interconnect

Method of forming low resistance contacts at the junction between r...

Contact structure for connecting an electrode to a semiconductor de...

Process for forming stable local interconnect/active area silicide...

Process for forming titanium silicide local interconnect

Method of forming low resistance contacts at the junction between r...

Process of fabricating complementary inverter circuit having multi-...

Process of making silicided contacts for semiconductor devices

Method for forming a metal silicide interconnect in an integrated c...

Germanium implant for use with ultra-shallow junctions

Aluminum metallization method

Method for forming local interconnect for integrated circuits

Method for fabricating low resistance contacts of semiconductor device

Contact structure for connecting an electrode to a semiconductor

Method for fabricating titanium silicide contacts

Stable local interconnect/active area silicide structure for VLSI a...

Formation of silicided junctions in deep sub-micron MOSFETs by defe...

Silicide interconnection with Schottky barrier diode isolation

Method of manufacturing a semiconductor device having a polycide st...

Oxide-capped titanium silicide formation