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H01L29/66325

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66325controlled by field-effect

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Bipolar transistors
- Patent number 12,107,124
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement and method of making
- Patent number 12,100,754
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with single termination trench having depth more than 10...
- Patent number 12,015,079
- Issue date Jun 18, 2024
- Polar Semiconductor, LLC
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,009,413
- Issue date Jun 11, 2024
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistors with gate structure aligned to extrinsi...
- Patent number 11,949,004
- Issue date Apr 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI lateral homogenization field high voltage power semiconductor d...
- Patent number 11,888,022
- Issue date Jan 30, 2024
- University of Electronic Science and Technology of China
- Wentong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device including lateral insulated gate bipolar transistor (L...
- Patent number 11,876,093
- Issue date Jan 16, 2024
- Richtek Technology Corporation
- Chih-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having an emitter region with a silicide spaced apart fr...
- Patent number 11,791,405
- Issue date Oct 17, 2023
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT and manufacturing method therefor
- Patent number 11,652,164
- Issue date May 16, 2023
- GTA Semiconductor Co., Ltd.
- Xueliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device having lateral insulated gate bipolar transistor (LIGB...
- Patent number 11,646,364
- Issue date May 9, 2023
- Richtek Technology Corporation
- Chih-Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,621,158
- Issue date Apr 4, 2023
- Fuji Electric Co., Ltd.
- Naoko Kodama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and fabrication method therefor
- Patent number 11,605,725
- Issue date Mar 14, 2023
- ADVANCED SEMICONDUCTOR MANUFACTURING CORPORATION., LTD.
- Xueliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor and method
- Patent number 11,575,029
- Issue date Feb 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,569,371
- Issue date Jan 31, 2023
- Dynex Semiconductor Limited
- Ian Deviny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing IGBT device
- Patent number 11,563,103
- Issue date Jan 24, 2023
- Hua Hong Semiconductor (Wuxi) Limited
- Chao Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including insulated gate bipolar transistor, d...
- Patent number 11,495,663
- Issue date Nov 8, 2022
- Mitsubishi Electric Corporation
- Kakeru Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,462,633
- Issue date Oct 4, 2022
- Kabushiki Kaisha Toshiba
- Ryohei Gejo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analysis system, analysis method, and program storage medium
- Patent number 11,431,255
- Issue date Aug 30, 2022
- NEC Corporation
- Sangwon Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,393,919
- Issue date Jul 19, 2022
- Mitsubishi Electric Corporation
- Koichi Nishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for fabricating the same
- Patent number 11,348,997
- Issue date May 31, 2022
- Vanguard International Semiconductor Corporation
- Ankit Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-negative differential transconductance device and method of p...
- Patent number 11,329,169
- Issue date May 10, 2022
- Research & Business Foundation Sungkyunkwan University
- Jin-Hong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor structure and manufacturing metho...
- Patent number 11,316,036
- Issue date Apr 26, 2022
- Powerchip Semiconductor Manufacturing Corporation
- Chun-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and method of manufacturing same
- Patent number 11,309,411
- Issue date Apr 19, 2022
- DB HITEK CO., LTD.
- Young-Seok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a LOCOS trench
- Patent number 11,239,351
- Issue date Feb 1, 2022
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making bipolar transistor
- Patent number 11,233,121
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Hsiung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a semiconductor device having a desaturation ch...
- Patent number 11,121,242
- Issue date Sep 14, 2021
- Infineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making reverse conducting insulated gate bipolar transistor
- Patent number 11,101,137
- Issue date Aug 24, 2021
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Zhiqiang Niu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating transistors with implanting dopants at first and second...
- Patent number 11,094,806
- Issue date Aug 17, 2021
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip contact structure, device assembly, and method o...
- Patent number 11,094,614
- Issue date Aug 17, 2021
- Littelfuse, Inc.
- Stefan Steinhoff
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR SWITCHING DEVICES, COMPOSITE SUBSTRATES THEREFOR, AND...
- Publication number 20240395913
- Publication date Nov 28, 2024
- THE TRUSTEES OF INDIANA UNIVERSITY
- Haitham Kanakri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20240395869
- Publication date Nov 28, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING
- Publication number 20240371987
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Fu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC-IGBT DEVICE AND PREPARATION METHOD THEREOF
- Publication number 20240347620
- Publication date Oct 17, 2024
- CHONGQING ALPHA AND OMEGA SEMICONDUCTOR LIMITED
- XIAOFENG QIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR MANUFACTURING METHOD
- Publication number 20240332406
- Publication date Oct 3, 2024
- STMicroelectronics International N.V.
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20240321986
- Publication date Sep 26, 2024
- MITSUBISHI ELECTRIC CORPORATION
- Kazunari Nakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240282817
- Publication date Aug 22, 2024
- Fuji Electric Co., Ltd.
- Yuuki ODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240274699
- Publication date Aug 15, 2024
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240258309
- Publication date Aug 1, 2024
- Fuji Electric Co., Ltd.
- Takahide TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTORS WITH GATE STRUCTURE ALIGNED TO EXTRINSI...
- Publication number 20240250158
- Publication date Jul 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240120412
- Publication date Apr 11, 2024
- Fuji Electric Co., Ltd.
- Seiji NOGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...
- Publication number 20230411501
- Publication date Dec 21, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR POWER TRANSISTOR AND METHOD OF MANUFA...
- Publication number 20230335595
- Publication date Oct 19, 2023
- LEAP Semiconductor Corp.
- Wei-Fan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUC...
- Publication number 20230307528
- Publication date Sep 28, 2023
- PANJIT INTERNATIONAL INC.
- SEUNGCHUL LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230261094
- Publication date Aug 17, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20230197787
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230197782
- Publication date Jun 22, 2023
- Hitachi, Ltd
- Naoki WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH SINGLE TERMINATION TRENCH HAVING DEPTH MORE THAN 10...
- Publication number 20230065066
- Publication date Mar 2, 2023
- Polar Semiconductor, LLC
- Noel Hoilien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTORS WITH GATE STRUCTURE ALIGNED TO EXTRINSI...
- Publication number 20230062194
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL HOMOGENIZATION FIELD HIGH VOLTAGE POWER SEMICONDUCTOR D...
- Publication number 20230053369
- Publication date Feb 23, 2023
- University of Electronic Science and Technology of China
- Wentong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING THE SAME
- Publication number 20230045172
- Publication date Feb 9, 2023
- Hyundai Motor Company
- NackYong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Arrangement and Method of Manufacture
- Publication number 20230028453
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Hung-Te LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED CHIP AND PREPARATION METHOD
- Publication number 20220416063
- Publication date Dec 29, 2022
- Huawei Technologies Co., Ltd
- Wentao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR AND METHOD
- Publication number 20220376093
- Publication date Nov 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Latch-up Free Lateral IGBT Device
- Publication number 20220359494
- Publication date Nov 10, 2022
- Nuvolta Technologies (Hefei) Co., Ltd.
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
- Publication number 20220352315
- Publication date Nov 3, 2022
- mqSemi AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ASYMMETRIC THICKNESS OXIDE TRENCHES
- Publication number 20220320310
- Publication date Oct 6, 2022
- Dynex Semiconductor Limited
- Luther-King Ekonde NGWENDSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220285537
- Publication date Sep 8, 2022
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING IGBT DEVICE
- Publication number 20220069105
- Publication date Mar 3, 2022
- Hua Hong Semiconductor (Wuxi) Limited
- Chao FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220013636
- Publication date Jan 13, 2022
- Mitsubishi Electric Corporation
- Kakeru OTSUKA
- H01 - BASIC ELECTRIC ELEMENTS

controlled by field-effect

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bipolar transistors

Semiconductor arrangement and method of making

Transistor with single termination trench having depth more than 10...

Semiconductor device and method for manufacturing the same

Lateral bipolar transistors with gate structure aligned to extrinsi...

SOI lateral homogenization field high voltage power semiconductor d...

Power device including lateral insulated gate bipolar transistor (L...

Power semiconductor device having overvoltage protection and method...

Transistor having an emitter region with a silicide spaced apart fr...

IGBT and manufacturing method therefor

Power device having lateral insulated gate bipolar transistor (LIGB...

Method of manufacturing semiconductor device

Insulated gate bipolar transistor and fabrication method therefor

Lateral bipolar junction transistor and method

Semiconductor device

Method for manufacturing IGBT device

Semiconductor device including insulated gate bipolar transistor, d...

Semiconductor device

Analysis system, analysis method, and program storage medium

Semiconductor device

Semiconductor devices and methods for fabricating the same

Multi-negative differential transconductance device and method of p...

Insulated gate bipolar transistor structure and manufacturing metho...

Insulated gate bipolar transistor and method of manufacturing same

Semiconductor device with a LOCOS trench

Method of making bipolar transistor

Method of operating a semiconductor device having a desaturation ch...

Method of making reverse conducting insulated gate bipolar transistor

Fabricating transistors with implanting dopants at first and second...

Semiconductor chip contact structure, device assembly, and method o...

Patents Applicationslast 30 patents

SEMICONDUCTOR SWITCHING DEVICES, COMPOSITE SUBSTRATES THEREFOR, AND...

BIPOLAR TRANSISTORS

SEMICONDUCTOR ARRANGEMENT AND METHOD OF MAKING

RC-IGBT DEVICE AND PREPARATION METHOD THEREOF

TRANSISTOR MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND POWER CONVERTER

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

LATERAL BIPOLAR TRANSISTORS WITH GATE STRUCTURE ALIGNED TO EXTRINSI...

SEMICONDUCTOR DEVICE

FABRICATING TRANSISTORS WITH IMPLANTING DOPANTS AT FIRST AND SECOND...

SILICON CARBIDE SEMICONDUCTOR POWER TRANSISTOR AND METHOD OF MANUFA...

MANUFACTURING METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUC...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

BIPOLAR TRANSISTORS

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

TRANSISTOR WITH SINGLE TERMINATION TRENCH HAVING DEPTH MORE THAN 10...

LATERAL BIPOLAR TRANSISTORS WITH GATE STRUCTURE ALIGNED TO EXTRINSI...

SOI LATERAL HOMOGENIZATION FIELD HIGH VOLTAGE POWER SEMICONDUCTOR D...

SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING THE SAME

Semiconductor Arrangement and Method of Manufacture

SEMICONDUCTOR DEVICE AND RELATED CHIP AND PREPARATION METHOD

LATERAL BIPOLAR JUNCTION TRANSISTOR AND METHOD

Latch-up Free Lateral IGBT Device

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

METHOD OF FORMING ASYMMETRIC THICKNESS OXIDE TRENCHES

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING IGBT DEVICE

SEMICONDUCTOR DEVICE