Controlling or regulating

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CPC
C30B25/16

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

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C30B25/16Controlling or regulating

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Patents Grantslast 30 patents

Information Patent Grant
Chemical source vessel with dip tube
- Patent number 12,297,540
- Issue date May 13, 2025
- ASM IP Holding B.V.
- Andrew Michael Yednak
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ultra-high ambipolar mobility cubic boron arsenide
- Patent number 12,297,563
- Issue date May 13, 2025
- University of Houston System
- Zhifeng Ren
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor deposition monitoring device
- Patent number 12,283,497
- Issue date Apr 22, 2025
- Samsung Electronics Co., Ltd.
- Young Uk Choi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide ingot and method of fabricating the same
- Patent number 12,276,043
- Issue date Apr 15, 2025
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
EPI self-heating sensor tube as in-situ growth rate sensor
- Patent number 12,270,752
- Issue date Apr 8, 2025
- Applied Materials, Inc.
- Zhepeng Cong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depositing boron containing silicon germanium layers
- Patent number 12,266,524
- Issue date Apr 1, 2025
- ASM IP Holding B.V.
- Lucas Petersen Barbosa Lima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal composite synthetic diamond material
- Patent number 12,234,570
- Issue date Feb 25, 2025
- ELEMENT SIX (UK) LIMITED
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for determining suitability of Czochralski growth condition...
- Patent number 12,227,874
- Issue date Feb 18, 2025
- GlobalWafers Co., Ltd.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of optimizing the EMI shielding and infrared transparency of...
- Patent number 12,203,192
- Issue date Jan 21, 2025
- BAE Systems Information and Electronic Systems Integration Inc.
- Jeremy B. Reeves
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate support device for a reaction chamber of an epitaxial rea...
- Patent number 12,195,877
- Issue date Jan 14, 2025
- LPE S.P.A.
- Silvio Preti
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gas-phase reactor system-with a reaction chamber, a solid precursor...
- Patent number 12,195,876
- Issue date Jan 14, 2025
- ASM IP Holding B.V.
- John Tolle
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,188,149
- Issue date Jan 7, 2025
- Sumitomo Electric Device Innovations, Inc.
- Kohei Miyashita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating hexagonal boron nitride
- Patent number 12,180,584
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming silicon carbide coated base substrates at multip...
- Patent number 12,180,611
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Yen Lin Leow
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing single crystal diamond assisted by polycrystallin...
- Patent number 12,173,427
- Issue date Dec 24, 2024
- Plasmability, LLC
- Robert J. Basnett
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Temperature-controlled chemical delivery system and reactor system...
- Patent number 12,163,225
- Issue date Dec 10, 2024
- ASM IP Holding B.V.
- Carl Louis White
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing bulk single crystal diamond on a substrate in a p...
- Patent number 12,139,812
- Issue date Nov 12, 2024
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming large area single crystal diamond substrates wi...
- Patent number 12,098,475
- Issue date Sep 24, 2024
- Board of Trustees of Michigan State University
- Timothy A. Grotjohn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for epitaxially depositing a material on a substrate by flow...
- Patent number 12,091,749
- Issue date Sep 17, 2024
- Applied Materials, Inc.
- Tetsuya Ishikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
In-situ film growth rate monitoring apparatus, systems, and methods...
- Patent number 12,077,880
- Issue date Sep 3, 2024
- Applied Materials, Inc.
- Zhepeng Cong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and hardware for post maintenance vacuum recovery system
- Patent number 12,072,267
- Issue date Aug 27, 2024
- Applied Materials, Inc.
- Martin A. Hilkene
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a GaN single crystal film on a buffer layer on a...
- Patent number 12,065,755
- Issue date Aug 20, 2024
- Haitao Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacture of single crystal synthetic diamond material
- Patent number 12,065,756
- Issue date Aug 20, 2024
- Element Six Technologies Limited
- Ian Friel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Superlattice layer, LED epitaxial structure, display device, and me...
- Patent number 12,057,521
- Issue date Aug 6, 2024
- CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- Wen Yang Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for silicon germanium uniformity control using multiple pre...
- Patent number 12,057,314
- Issue date Aug 6, 2024
- ASM IP Holding B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for manufacturing hexagonal silicon crystal
- Patent number 12,054,849
- Issue date Aug 6, 2024
- Hyung Soo Ahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide crystal manufacturing apparatus, control device of...
- Patent number 12,043,918
- Issue date Jul 23, 2024
- Denso Corporation
- Daisuke Uematsu
- G05 - CONTROLLING REGULATING

Patents Applicationslast 30 patents

Information Patent Application
UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE AND...
- Publication number 20250154685
- Publication date May 15, 2025
- Shin-Etsu Chemical Co., Ltd.
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS
- Publication number 20250157814
- Publication date May 15, 2025
- ASM IP HOLDING B.V.
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR THE FABRICATION OF P-TYPE Ga2O3 BY PHOSPHORUS ION IMPLAN...
- Publication number 20250137168
- Publication date May 1, 2025
- National Yang Ming Chiao Tung University
- Ray-Hua Horng
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE SUPPORT DEVICE FOR A REACTION CHAMBER OF AN EPITAXIAL REA...
- Publication number 20250140597
- Publication date May 1, 2025
- LPE S.P.A.
- Silvio Preti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PROCESSING CHAMBER, SEMICONDUCTOR PROCESSING EQUIPMEN...
- Publication number 20250129511
- Publication date Apr 24, 2025
- Advanced Micro-Fabrication Equipment Inc. China
- Heng TAO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITION...
- Publication number 20250129512
- Publication date Apr 24, 2025
- GLOBALWAFERS CO., LTD.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Application
ANGULAR SPEED MEASUREMENT SYSTEM FOR SUBSTRATES USED IN EPITAXIAL D...
- Publication number 20250129508
- Publication date Apr 24, 2025
- LPE S.p.A.
- Maurilio Giuseppe Meschia
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND APPARATUS FOR ANISOTROPIC FILM GROWTH, AND RELATED DEVICES
- Publication number 20250132154
- Publication date Apr 24, 2025
- Applied Materials, Inc.
- Chen-Ying WU
- C30 - CRYSTAL GROWTH
Information Patent Application
VAPOR PHASE GROWTH APPARATUS
- Publication number 20250129470
- Publication date Apr 24, 2025
- NUFLARE TECHNOLOGY, INC.
- Yoshiaki DAIGO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR S...
- Publication number 20250118554
- Publication date Apr 10, 2025
- KYOCERA CORPORATION
- Yuta AOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
- Publication number 20250109526
- Publication date Apr 3, 2025
- Resonac Corporation
- Kensho TANAKA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER
- Publication number 20250112042
- Publication date Apr 3, 2025
- ASM IP HOLDING B.V.
- Gregory Deye
- C30 - CRYSTAL GROWTH
Information Patent Application
METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSI...
- Publication number 20250109524
- Publication date Apr 3, 2025
- Wisconsin Alumni Research Foundation
- Shubhra S. Pasayat
- C30 - CRYSTAL GROWTH
Information Patent Application
CHEMICAL VAPOR DEPOSITION GROWTH OF HEXAGONAL BORON NITRIDE FILMS A...
- Publication number 20250092571
- Publication date Mar 20, 2025
- UT-Battelle, LLC
- Ilia N. Ivanov
- C30 - CRYSTAL GROWTH
Information Patent Application
GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR...
- Publication number 20250092566
- Publication date Mar 20, 2025
- ASM IP HOLDING B.V.
- John Tolle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS, COMPUTING D...
- Publication number 20250092569
- Publication date Mar 20, 2025
- DENSO CORPORATION
- Daisuke UEMATSU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE...
- Publication number 20250092572
- Publication date Mar 20, 2025
- Peking University
- Xinqiang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR GAS DELIVERY IN A PROCESSING CHAMBER
- Publication number 20250075369
- Publication date Mar 6, 2025
- Applied Materials, Inc.
- Ryan Sungbin HU
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Growing Single Crystal Diamond Assisted by Polycrystallin...
- Publication number 20250059677
- Publication date Feb 20, 2025
- PLASMABILITY, LLC
- Robert J. Basnett
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER MANUFACTUR...
- Publication number 20250051959
- Publication date Feb 13, 2025
- SUMCO CORPORATION
- Masayuki TSUJI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SIGNAL-TO-NOISE CORRECTION METHOD FOR ACCURATE FILMS MEASUREMENT
- Publication number 20250035551
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Khokan C. PAUL
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH CHAMBER SMART SEASONING
- Publication number 20250038053
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Zhepeng Cong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Epitaxy Process Control in Semiconductor Manufacturing
- Publication number 20250034753
- Publication date Jan 30, 2025
- ROBERT BOSCH GmbH
- Stella Maris Van Eek
- C30 - CRYSTAL GROWTH
Information Patent Application
AUTOMATED THIN FILM DEPOSITION SYSTEM AND THIN FILM DEPOSITION METH...
- Publication number 20250011918
- Publication date Jan 9, 2025
- Seoul National University R&DB Foundation
- Gyu Chul Yi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
- Publication number 20250011968
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Shan-Hui Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
VIRTUAL SENSOR FOR PREDICTING AND MONITORING TEMPERATURE OF CHAMBER...
- Publication number 20250003112
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Ala MORADIAN
- C30 - CRYSTAL GROWTH
Information Patent Application
CVD SINGLE CRYSTAL DIAMOND
- Publication number 20240417884
- Publication date Dec 19, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- Benjamin Simon TRUSCOTT
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240410082
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Ai Ikeda
- C30 - CRYSTAL GROWTH
Information Patent Application
IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...
- Publication number 20240410078
- Publication date Dec 12, 2024
- Applied Materials, Inc.
- Zhepeng CONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Controlling or regulating

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Chemical source vessel with dip tube

Ultra-high ambipolar mobility cubic boron arsenide

Semiconductor deposition monitoring device

Silicon carbide ingot and method of fabricating the same

EPI self-heating sensor tube as in-situ growth rate sensor

Method for depositing boron containing silicon germanium layers

Single crystal composite synthetic diamond material

Methods for determining suitability of Czochralski growth condition...

Method of optimizing the EMI shielding and infrared transparency of...

Substrate support device for a reaction chamber of an epitaxial rea...

Gas-phase reactor system-with a reaction chamber, a solid precursor...

Method of manufacturing semiconductor device

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

Method of fabricating hexagonal boron nitride

Methods of forming silicon carbide coated base substrates at multip...

Method of growing single crystal diamond assisted by polycrystallin...

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Temperature-controlled chemical delivery system and reactor system...

Methods for determining suitability of silicon substrates for epitaxy

Method of growing bulk single crystal diamond on a substrate in a p...

Methods for forming large area single crystal diamond substrates wi...

Method for epitaxially depositing a material on a substrate by flow...

In-situ film growth rate monitoring apparatus, systems, and methods...

Method and hardware for post maintenance vacuum recovery system

Method for growing a GaN single crystal film on a buffer layer on a...

Method of manufacture of single crystal synthetic diamond material

Superlattice layer, LED epitaxial structure, display device, and me...

Methods for silicon germanium uniformity control using multiple pre...

Apparatus and method for manufacturing hexagonal silicon crystal

Silicon carbide crystal manufacturing apparatus, control device of...

Patents Applicationslast 30 patents

UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE AND...

METHOD FOR DEPOSITING BORON CONTAINING SILICON GERMANIUIM LAYERS

METHOD FOR THE FABRICATION OF P-TYPE Ga2O3 BY PHOSPHORUS ION IMPLAN...

SUBSTRATE SUPPORT DEVICE FOR A REACTION CHAMBER OF AN EPITAXIAL REA...

SEMICONDUCTOR PROCESSING CHAMBER, SEMICONDUCTOR PROCESSING EQUIPMEN...

METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITION...

ANGULAR SPEED MEASUREMENT SYSTEM FOR SUBSTRATES USED IN EPITAXIAL D...

METHODS AND APPARATUS FOR ANISOTROPIC FILM GROWTH, AND RELATED DEVICES

VAPOR PHASE GROWTH APPARATUS

MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR S...

SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

METHOD, SYSTEM AND APPARATUS FOR FORMING ANISOTROPIC LAYER

METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSI...

CHEMICAL VAPOR DEPOSITION GROWTH OF HEXAGONAL BORON NITRIDE FILMS A...

GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR...

SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS, COMPUTING D...

METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE...

METHOD AND APPARATUS FOR GAS DELIVERY IN A PROCESSING CHAMBER

Method of Growing Single Crystal Diamond Assisted by Polycrystallin...

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER MANUFACTUR...

SIGNAL-TO-NOISE CORRECTION METHOD FOR ACCURATE FILMS MEASUREMENT

GROWTH CHAMBER SMART SEASONING

Epitaxy Process Control in Semiconductor Manufacturing

AUTOMATED THIN FILM DEPOSITION SYSTEM AND THIN FILM DEPOSITION METH...

METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY

VIRTUAL SENSOR FOR PREDICTING AND MONITORING TEMPERATURE OF CHAMBER...

CVD SINGLE CRYSTAL DIAMOND

SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR

IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...