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CPC
C30B25/16

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CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B25/00Single-crystal growth by chemical reaction of reactive gases

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C30B25/16Controlling or regulating

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Patents Grantslast 30 patents

Information Patent Grant
Methods for determining suitability of Czochralski growth condition...
- Patent number 12,227,874
- Issue date Feb 18, 2025
- GlobalWafers Co., Ltd.
- Zheng Lu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of optimizing the EMI shielding and infrared transparency of...
- Patent number 12,203,192
- Issue date Jan 21, 2025
- BAE Systems Information and Electronic Systems Integration Inc.
- Jeremy B. Reeves
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate support device for a reaction chamber of an epitaxial rea...
- Patent number 12,195,877
- Issue date Jan 14, 2025
- LPE S.P.A.
- Silvio Preti
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gas-phase reactor system-with a reaction chamber, a solid precursor...
- Patent number 12,195,876
- Issue date Jan 14, 2025
- ASM IP Holding B.V.
- John Tolle
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,188,149
- Issue date Jan 7, 2025
- Sumitomo Electric Device Innovations, Inc.
- Kohei Miyashita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...
- Patent number 12,188,152
- Issue date Jan 7, 2025
- Resonac Corporation
- Kensho Tanaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating hexagonal boron nitride
- Patent number 12,180,584
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Changseok Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming silicon carbide coated base substrates at multip...
- Patent number 12,180,611
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Yen Lin Leow
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing single crystal diamond assisted by polycrystallin...
- Patent number 12,173,427
- Issue date Dec 24, 2024
- Plasmability, LLC
- Robert J. Basnett
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Temperature-controlled chemical delivery system and reactor system...
- Patent number 12,163,225
- Issue date Dec 10, 2024
- ASM IP Holding B.V.
- Carl Louis White
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing bulk single crystal diamond on a substrate in a p...
- Patent number 12,139,812
- Issue date Nov 12, 2024
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for forming large area single crystal diamond substrates wi...
- Patent number 12,098,475
- Issue date Sep 24, 2024
- Board of Trustees of Michigan State University
- Timothy A. Grotjohn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for epitaxially depositing a material on a substrate by flow...
- Patent number 12,091,749
- Issue date Sep 17, 2024
- Applied Materials, Inc.
- Tetsuya Ishikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
In-situ film growth rate monitoring apparatus, systems, and methods...
- Patent number 12,077,880
- Issue date Sep 3, 2024
- Applied Materials, Inc.
- Zhepeng Cong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and hardware for post maintenance vacuum recovery system
- Patent number 12,072,267
- Issue date Aug 27, 2024
- Applied Materials, Inc.
- Martin A. Hilkene
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a GaN single crystal film on a buffer layer on a...
- Patent number 12,065,755
- Issue date Aug 20, 2024
- Haitao Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacture of single crystal synthetic diamond material
- Patent number 12,065,756
- Issue date Aug 20, 2024
- Element Six Technologies Limited
- Ian Friel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Superlattice layer, LED epitaxial structure, display device, and me...
- Patent number 12,057,521
- Issue date Aug 6, 2024
- CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- Wen Yang Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for silicon germanium uniformity control using multiple pre...
- Patent number 12,057,314
- Issue date Aug 6, 2024
- ASM IP Holding B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for manufacturing hexagonal silicon crystal
- Patent number 12,054,849
- Issue date Aug 6, 2024
- Hyung Soo Ahn
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide crystal manufacturing apparatus, control device of...
- Patent number 12,043,918
- Issue date Jul 23, 2024
- Denso Corporation
- Daisuke Uematsu
- G05 - CONTROLLING REGULATING
Information Patent Grant
Manufacturing method for semiconductor silicon wafer
- Patent number 12,046,469
- Issue date Jul 23, 2024
- Globalwafers Japan Co., Ltd
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal synthetic diamond material
- Patent number 12,037,702
- Issue date Jul 16, 2024
- Element Six Technologies Limited
- Andrew Mark Edmonds
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition equipment with adjustable temperature source
- Patent number 12,009,208
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih Yung Hung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the deposition of monocrystalline or polycrystalline tin...
- Patent number 12,000,062
- Issue date Jun 4, 2024
- United States of America as represented by the Secretary of the Air Force
- Bruce B. Claflin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming structures including silicon germanium and silic...
- Patent number 11,996,289
- Issue date May 28, 2024
- ASM IP Holding B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for growing beta-Ga2O3-based single crystal film, and crysta...
- Patent number 11,982,016
- Issue date May 14, 2024
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride semiconductor device and production method therefor
- Patent number 11,955,581
- Issue date Apr 9, 2024
- Toyoda Gosei Co., Ltd.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Growing Single Crystal Diamond Assisted by Polycrystallin...
- Publication number 20250059677
- Publication date Feb 20, 2025
- PLASMABILITY, LLC
- Robert J. Basnett
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...
- Publication number 20250059674
- Publication date Feb 20, 2025
- Anvil Semiconductors Ltd
- Martin Steven Mark LAMB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER MANUFACTUR...
- Publication number 20250051959
- Publication date Feb 13, 2025
- SUMCO CORPORATION
- Masayuki TSUJI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SIGNAL-TO-NOISE CORRECTION METHOD FOR ACCURATE FILMS MEASUREMENT
- Publication number 20250035551
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Khokan C. PAUL
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH CHAMBER SMART SEASONING
- Publication number 20250038053
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Zhepeng Cong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Epitaxy Process Control in Semiconductor Manufacturing
- Publication number 20250034753
- Publication date Jan 30, 2025
- ROBERT BOSCH GmbH
- Stella Maris Van Eek
- C30 - CRYSTAL GROWTH
Information Patent Application
AUTOMATED THIN FILM DEPOSITION SYSTEM AND THIN FILM DEPOSITION METH...
- Publication number 20250011918
- Publication date Jan 9, 2025
- Seoul National University R&DB Foundation
- Gyu Chul Yi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
- Publication number 20250011968
- Publication date Jan 9, 2025
- GLOBALWAFERS CO., LTD.
- Shan-Hui Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
VIRTUAL SENSOR FOR PREDICTING AND MONITORING TEMPERATURE OF CHAMBER...
- Publication number 20250003112
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Ala MORADIAN
- C30 - CRYSTAL GROWTH
Information Patent Application
CVD SINGLE CRYSTAL DIAMOND
- Publication number 20240417884
- Publication date Dec 19, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- Benjamin Simon TRUSCOTT
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240410082
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Ai Ikeda
- C30 - CRYSTAL GROWTH
Information Patent Application
IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...
- Publication number 20240410078
- Publication date Dec 12, 2024
- Applied Materials, Inc.
- Zhepeng CONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PROCESS FOR GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDES
- Publication number 20240410080
- Publication date Dec 12, 2024
- Honda Motor Co., Ltd.
- Xufan LI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH METHOD AND STRUCTURE OF LED EPITAXY
- Publication number 20240405159
- Publication date Dec 5, 2024
- Focus Lightings Tech (Suqian) Co., Ltd.
- Guochang LI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING BULK SINGLE CRYSTAL DIAMOND ON A SUBSTRATE IN A P...
- Publication number 20240401231
- Publication date Dec 5, 2024
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
- Publication number 20240401235
- Publication date Dec 5, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURE OF A WATCH CRYSTAL
- Publication number 20240392473
- Publication date Nov 28, 2024
- Corey Albert Morrow
- C30 - CRYSTAL GROWTH
Information Patent Application
LIQUID PRECURSOR CONTAINERS, LIQUID PRECURSOR SYSTEMS AND SEMICONDU...
- Publication number 20240376634
- Publication date Nov 14, 2024
- ASM IP HOLDING B.V.
- Krishnaswamy Mahadevan
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRE...
- Publication number 20240332016
- Publication date Oct 3, 2024
- ASM IP HOLDING B.V.
- Amir Kajbafvala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Deposition Equipment with Adjustable Temperature Source
- Publication number 20240332018
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih Yung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFECT REDUCTION IN DIAMOND
- Publication number 20240318350
- Publication date Sep 26, 2024
- M7D Corporation
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GALLIUM OXIDE LAYER ON A SUBSTRATE
- Publication number 20240309552
- Publication date Sep 19, 2024
- Siltronic AG
- Walter HAECKL
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MEASURING THICKNESS OF SILICON EPITAXIAL LAYER
- Publication number 20240282646
- Publication date Aug 22, 2024
- Shanghai Huali Integrated Circuit Corporation
- Jiaqi HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SILICON CARBIDE INGOT
- Publication number 20240271322
- Publication date Aug 15, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER
- Publication number 20240274671
- Publication date Aug 15, 2024
- Resonac Corporation
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...
- Publication number 20240274437
- Publication date Aug 15, 2024
- ASM IP HOLDING B.V.
- Amir Kajbafvala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEFORMATION COMPENSATION METHOD FOR GROWING THICK GALIUM NITRIDE ON...
- Publication number 20240263348
- Publication date Aug 8, 2024
- ROBERT BOSCH GmbH
- Bo CHENG
- C30 - CRYSTAL GROWTH
Information Patent Application
PHASE-CONTROLLABLE SYNTHESIS OF TRANSITION METAL DICHALCOGENIDE MON...
- Publication number 20240263349
- Publication date Aug 8, 2024
- City University of Hong Kong
- Hua ZHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CONTROLLING LAYER-TO-LAYER THICKNESS IN MULTI-TIER EPITA...
- Publication number 20240247405
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Alexandros ANASTASOPOULOS
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTUR...
- Publication number 20240250115
- Publication date Jul 25, 2024
- Shin-Etsu Chemical Co., Ltd.
- Takenori WATABE
- H01 - BASIC ELECTRIC ELEMENTS

Controlling or regulating

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods for determining suitability of Czochralski growth condition...

Method of optimizing the EMI shielding and infrared transparency of...

Substrate support device for a reaction chamber of an epitaxial rea...

Gas-phase reactor system-with a reaction chamber, a solid precursor...

Method of manufacturing semiconductor device

SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer...

Method of fabricating hexagonal boron nitride

Methods of forming silicon carbide coated base substrates at multip...

Method of growing single crystal diamond assisted by polycrystallin...

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Temperature-controlled chemical delivery system and reactor system...

Methods for determining suitability of silicon substrates for epitaxy

Method of growing bulk single crystal diamond on a substrate in a p...

Methods for forming large area single crystal diamond substrates wi...

Method for epitaxially depositing a material on a substrate by flow...

In-situ film growth rate monitoring apparatus, systems, and methods...

Method and hardware for post maintenance vacuum recovery system

Method for growing a GaN single crystal film on a buffer layer on a...

Method of manufacture of single crystal synthetic diamond material

Superlattice layer, LED epitaxial structure, display device, and me...

Methods for silicon germanium uniformity control using multiple pre...

Apparatus and method for manufacturing hexagonal silicon crystal

Silicon carbide crystal manufacturing apparatus, control device of...

Manufacturing method for semiconductor silicon wafer

Single crystal synthetic diamond material

Deposition equipment with adjustable temperature source

Method for the deposition of monocrystalline or polycrystalline tin...

Methods of forming structures including silicon germanium and silic...

Method for growing beta-Ga2O3-based single crystal film, and crysta...

Group III nitride semiconductor device and production method therefor

Patents Applicationslast 30 patents

Method of Growing Single Crystal Diamond Assisted by Polycrystallin...

REDUCING ELECTRICAL ACTIVITY OF DEFECTS IN SILICON CARBIDE GROWN ON...

EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER MANUFACTUR...

SIGNAL-TO-NOISE CORRECTION METHOD FOR ACCURATE FILMS MEASUREMENT

GROWTH CHAMBER SMART SEASONING

Epitaxy Process Control in Semiconductor Manufacturing

AUTOMATED THIN FILM DEPOSITION SYSTEM AND THIN FILM DEPOSITION METH...

METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY

VIRTUAL SENSOR FOR PREDICTING AND MONITORING TEMPERATURE OF CHAMBER...

CVD SINGLE CRYSTAL DIAMOND

SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR

IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...

PROCESS FOR GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDES

GROWTH METHOD AND STRUCTURE OF LED EPITAXY

METHOD OF GROWING BULK SINGLE CRYSTAL DIAMOND ON A SUBSTRATE IN A P...

SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME

METHOD OF MANUFACTURE OF A WATCH CRYSTAL

LIQUID PRECURSOR CONTAINERS, LIQUID PRECURSOR SYSTEMS AND SEMICONDU...

METHODS FOR SILICON GERMANIUM UNIFORMITY CONTROL USING MULTIPLE PRE...

Deposition Equipment with Adjustable Temperature Source

DEFECT REDUCTION IN DIAMOND

METHOD FOR PRODUCING A GALLIUM OXIDE LAYER ON A SUBSTRATE

METHOD FOR MEASURING THICKNESS OF SILICON EPITAXIAL LAYER

METHOD OF FABRICATING SILICON CARBIDE INGOT

SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER

METHODS OF FORMING STRUCTURES INCLUDING SILICON GERMANIUM AND SILIC...

DEFORMATION COMPENSATION METHOD FOR GROWING THICK GALIUM NITRIDE ON...

PHASE-CONTROLLABLE SYNTHESIS OF TRANSITION METAL DICHALCOGENIDE MON...

METHOD FOR CONTROLLING LAYER-TO-LAYER THICKNESS IN MULTI-TIER EPITA...

LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTUR...