Deposition of Schottky electrodes

Industry

CPC
H01L21/28581

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/28581Deposition of Schottky electrodes

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a gate terminal of a HEMT device, and HEMT...
- Patent number 12,165,871
- Issue date Dec 10, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN/two-dimensional AlN heterojunction rectifier on silicon substra...
- Patent number 12,154,990
- Issue date Nov 26, 2024
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 12,132,103
- Issue date Oct 29, 2024
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 12,100,757
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,046,647
- Issue date Jul 23, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT and method of fabricating the same
- Patent number 12,046,669
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superconductor gate semiconductor field-effect transistor
- Patent number 12,009,414
- Issue date Jun 11, 2024
- International Business Machines Corporation
- Eunjung Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a III-N enhancement mode HEMT device
- Patent number 12,002,680
- Issue date Jun 4, 2024
- Imec VZW
- Niels Posthuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a doped gate elec...
- Patent number 11,942,326
- Issue date Mar 26, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Petr Kostelnik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating high electron mobility transistor
- Patent number 11,929,407
- Issue date Mar 12, 2024
- Vanguard International Semiconductor Corporation
- Ting-En Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor device
- Patent number 11,923,449
- Issue date Mar 5, 2024
- Winbond Electronics Corp.
- Hao-Chuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and manufacturing method therefor
- Patent number 11,888,053
- Issue date Jan 30, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method for the semiconduc...
- Patent number 11,876,129
- Issue date Jan 16, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor including an improved gate region and related manuf...
- Patent number 11,799,025
- Issue date Oct 24, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 11,784,053
- Issue date Oct 10, 2023
- Sumitomo Electric Device Innovations, Inc.
- Yukinori Nose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky diode device and method for fabricating t...
- Patent number 11,769,841
- Issue date Sep 26, 2023
- TAIPEI ANJET CORPORATION
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 11,742,419
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a HEMT device with reduced gate leakage cur...
- Patent number 11,728,404
- Issue date Aug 15, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
HEMT and method of fabricating the same
- Patent number 11,721,751
- Issue date Aug 8, 2023
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming a high electron mobility transistor including a...
- Patent number 11,710,773
- Issue date Jul 25, 2023
- Sumitomo Electric Industries, Ltd.
- Kenta Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,694,900
- Issue date Jul 4, 2023
- Kabushiki Kaisha Toshiba
- Toshiyuki Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductors with improved thermal budget and process of making s...
- Patent number 11,658,233
- Issue date May 23, 2023
- Wolfspeed, Inc.
- Kyoung-Keun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky diode device and method for fabricating t...
- Patent number 11,646,382
- Issue date May 9, 2023
- TAIPEI ANJET CORPORATION
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure of N-face group III nitride, active device, and...
- Patent number 11,605,731
- Issue date Mar 14, 2023
- Chih-Shu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 11,563,097
- Issue date Jan 24, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Ming-Hong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low turn-on voltage GaN diodes having anode metal with consistent c...
- Patent number 11,557,682
- Issue date Jan 17, 2023
- Xidian University
- Jing Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 11,380,767
- Issue date Jul 5, 2022
- Vanguard International Semiconductor Corporation
- Ting-En Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor including a gate electrode layer...
- Patent number 11,374,098
- Issue date Jun 28, 2022
- Sumitomo Electric Industries, Ltd.
- Kenta Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating transistor with short gate length by two-step...
- Patent number 11,367,615
- Issue date Jun 21, 2022
- National Chiao Tung University
- Yi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,367,787
- Issue date Jun 21, 2022
- Winbond Electronics Corp.
- Hao-Chuan Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20250015174
- Publication date Jan 9, 2025
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20240332411
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING HIGH ELECTRON MOBILITY TRANSISTORS WITH CONTROLL...
- Publication number 20240304678
- Publication date Sep 12, 2024
- Woflspeed, Inc.
- Won Sang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240243179
- Publication date Jul 18, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Hui Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...
- Publication number 20240204091
- Publication date Jun 20, 2024
- Intel Corporation
- Heli Vora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH BAND-GAP DEVICES WITH A DOPED HIGH BAND-GAP GATE ELECTRODE EXT...
- Publication number 20240055488
- Publication date Feb 15, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-OFF MESFET DEVICE WITH STACKED GATE CONTACT
- Publication number 20240038869
- Publication date Feb 1, 2024
- Farshid Raissi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT TRANSISTOR INCLUDING AN IMPROVED GATE REGION AND RELATED MANUF...
- Publication number 20240021718
- Publication date Jan 18, 2024
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA-BASED BARRIER LAYER REMOVAL METHOD FOR INCREASING PEAK TRANS...
- Publication number 20230395670
- Publication date Dec 7, 2023
- Wolfspeed, Inc.
- Chris Hardiman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20230361208
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT AND METHOD OF FABRICATING THE SAME
- Publication number 20230317840
- Publication date Oct 5, 2023
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD T...
- Publication number 20230299169
- Publication date Sep 21, 2023
- Powerchip Semiconductor Manufacturing Corporation
- Jih-Wen Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
- Publication number 20230178641
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Eunjung Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN/TWO-DIMENSIONAL ALN HETEROJUNCTION RECTIFIER ON SILICON SUBSTRA...
- Publication number 20230030977
- Publication date Feb 2, 2023
- SOUTH CHINA UNIVERSITY OF TECHNOLOGY
- Wenliang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...
- Publication number 20230021015
- Publication date Jan 19, 2023
- Taipei ANJET Corporation
- Nobuo MACHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...
- Publication number 20220367731
- Publication date Nov 17, 2022
- Taipei ANJET Corporation
- Nobuo Machida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20220336649
- Publication date Oct 20, 2022
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220293763
- Publication date Sep 15, 2022
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Tomohiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20220293747
- Publication date Sep 15, 2022
- Vanguard International Semiconductor Corporation
- Ting-En Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20220262943
- Publication date Aug 18, 2022
- WINBOND ELECTRONICS CORP.
- Hao-Chuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20220223429
- Publication date Jul 14, 2022
- The Regents of the University of California
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device Including a Doped Gate Electrode and a Process of...
- Publication number 20220189780
- Publication date Jun 16, 2022
- Semiconductor Components Industries, LLC
- Petr KOSTELNIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a III-N Enhancement Mode HEMT Device
- Publication number 20220181159
- Publication date Jun 9, 2022
- IMEC vzw
- Niels Posthuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT AND METHOD OF FABRICATING THE SAME
- Publication number 20220165873
- Publication date May 26, 2022
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220109056
- Publication date Apr 7, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220093762
- Publication date Mar 24, 2022
- Mitsubishi Electric Corporation
- Hiroyuki OKAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20220093781
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220020592
- Publication date Jan 20, 2022
- Kabushiki Kaisha Toshiba
- Toshiyuki NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor and Manufacturing Method Therefor
- Publication number 20210359119
- Publication date Nov 18, 2021
- Nippon Telegraph and Telephone Corporation
- Takuya Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20210336016
- Publication date Oct 28, 2021
- Vanguard International Semiconductor Corporation
- Ting-En Hsieh
- H01 - BASIC ELECTRIC ELEMENTS

Deposition of Schottky electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for manufacturing a gate terminal of a HEMT device, and HEMT...

GaN/two-dimensional AlN heterojunction rectifier on silicon substra...

High electron mobility transistor and fabrication method thereof

Cap structure coupled to source to reduce saturation current in HEM...

Semiconductor device and fabrication method thereof

HEMT and method of fabricating the same

Superconductor gate semiconductor field-effect transistor

Method of manufacturing a III-N enhancement mode HEMT device

Process of forming an electronic device including a doped gate elec...

Method of fabricating high electron mobility transistor

Manufacturing method for semiconductor device

Field-effect transistor and manufacturing method therefor

Semiconductor structure and manufacturing method for the semiconduc...

HEMT transistor including an improved gate region and related manuf...

Semiconductor device manufacturing method

Junction barrier Schottky diode device and method for fabricating t...

Cap structure coupled to source to reduce saturation current in HEM...

Method of manufacturing a HEMT device with reduced gate leakage cur...

HEMT and method of fabricating the same

Process of forming a high electron mobility transistor including a...

Semiconductor device and method for manufacturing the same

Semiconductors with improved thermal budget and process of making s...

Junction barrier Schottky diode device and method for fabricating t...

Epitaxial structure of N-face group III nitride, active device, and...

High electron mobility transistor and fabrication method thereof

Low turn-on voltage GaN diodes having anode metal with consistent c...

High electron mobility transistor and fabrication method thereof

High electron mobility transistor including a gate electrode layer...

Method of fabricating transistor with short gate length by two-step...

Semiconductor device and manufacturing method thereof

Patents Applicationslast 30 patents

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

METHODS OF FORMING HIGH ELECTRON MOBILITY TRANSISTORS WITH CONTROLL...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...

HIGH BAND-GAP DEVICES WITH A DOPED HIGH BAND-GAP GATE ELECTRODE EXT...

NORMALLY-OFF MESFET DEVICE WITH STACKED GATE CONTACT

HEMT TRANSISTOR INCLUDING AN IMPROVED GATE REGION AND RELATED MANUF...

PLASMA-BASED BARRIER LAYER REMOVAL METHOD FOR INCREASING PEAK TRANS...

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

HEMT AND METHOD OF FABRICATING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD T...

SUPERCONDUCTOR GATE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

GAN/TWO-DIMENSIONAL ALN HETEROJUNCTION RECTIFIER ON SILICON SUBSTRA...

JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...

JUNCTION BARRIER SCHOTTKY DIODE DEVICE AND METHOD FOR FABRICATING T...

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES

Electronic Device Including a Doped Gate Electrode and a Process of...

Method of Manufacturing a III-N Enhancement Mode HEMT Device

HEMT AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Field-Effect Transistor and Manufacturing Method Therefor

HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF