details concerning the memory cell structure

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GPHYSICS G11Information storage G11CSTATIC STORES G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements Storage elements therefor

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G11C11/161details concerning the memory cell structure

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Patents Grantslast 30 patents

Information Patent Grant
Methods of writing and forming memory device
- Patent number 12,324,165
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Min Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
SOT-MRAM with shared selector
- Patent number 12,322,428
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- MingYuan Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Matrix-vector multiplication using SOT-based non-volatile memory cells
- Patent number 12,314,842
- Issue date May 27, 2025
- Western Digital Technologies, Inc.
- Thao A. Nguyen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistive memory device and manufacturing method thereof
- Patent number 12,315,541
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zong-You Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory using spin-orbit torque
- Patent number 12,317,753
- Issue date May 27, 2025
- EVERSPIN TECHNOLOGIES, INC.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked spin-orbit-torque magnetoresistive random-access memory
- Patent number 12,317,509
- Issue date May 27, 2025
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure and method for an MRAM device with a multi-layer top elec...
- Patent number 12,310,255
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Hao Liao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunneling junction device and memory device including the...
- Patent number 12,310,250
- Issue date May 20, 2025
- Samsung Electronics Co., Ltd.
- Kwangseok Kim
- G01 - MEASURING TESTING
Information Patent Grant
Magnetoresistance memory device and method of manufacturing magneto...
- Patent number 12,310,251
- Issue date May 20, 2025
- Kioxia Corporation
- Takao Ochiai
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point array refresh scheme
- Patent number 12,300,296
- Issue date May 13, 2025
- SanDisk Technologies, Inc.
- Michael Nicolas Albert Tran
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ion beam etching with sidewall cleaning
- Patent number 12,302,760
- Issue date May 13, 2025
- Lam Research Corporation
- Thorsten Lill
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and semiconductor die, and method of fabricating memo...
- Patent number 12,302,587
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction devices
- Patent number 12,302,761
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsi-Wen Tien
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction devices
- Patent number 12,298,362
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Fen Chien
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory structure
- Patent number 12,300,292
- Issue date May 13, 2025
- Industrial Technology Research Institute
- Hsin-Han Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for writing to magnetic random access memory
- Patent number 12,300,293
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, and semiconductor structure and forming method thereof
- Patent number 12,295,135
- Issue date May 6, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Shih-Hung Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 12,295,268
- Issue date May 6, 2025
- Samsung Electronics Co., Ltd.
- Byongguk Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetization rotational element, magnetoresistance effect element,...
- Patent number 12,290,002
- Issue date Apr 29, 2025
- TDK Corporation
- Yugo Ishitani
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method of operating the same
- Patent number 12,290,007
- Issue date Apr 29, 2025
- Samsung Electronics Co., Ltd.
- Siyeon Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element, magnetic recording element, and h...
- Patent number 12,288,576
- Issue date Apr 29, 2025
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device structure and manufacturing method thereof
- Patent number 12,289,892
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Feng Young
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque magnetoresistive memory device with a free lay...
- Patent number 12,283,296
- Issue date Apr 22, 2025
- SanDisk Technologies, Inc.
- Tiffany Santos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 12,283,297
- Issue date Apr 22, 2025
- Kioxia Corporation
- Kuniaki Sugiura
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,284,812
- Issue date Apr 22, 2025
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Modified top electrode contact for MRAM embedding in advanced logic...
- Patent number 12,277,960
- Issue date Apr 15, 2025
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,279,536
- Issue date Apr 15, 2025
- United Microelectronics Corp.
- Jin-Yan Chiou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin injection source, magnetic memory, spin hall oscillator, compu...
- Patent number 12,279,534
- Issue date Apr 15, 2025
- INSTITUTE OF SCIENCE TOKYO
- Nam Hai Pham
- G11 - INFORMATION STORAGE
Information Patent Grant
Logic element using spin-orbit torque and magnetic tunnel junction...
- Patent number 12,274,178
- Issue date Apr 8, 2025
- IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Jin Pyo Hong
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiferroic memory with piezoelectric layers and related methods
- Patent number 12,274,073
- Issue date Apr 8, 2025
- Eagle Technology, LLC
- Matt Bauer
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20250185519
- Publication date Jun 5, 2025
- Samsung Electronics Co., Ltd.
- Siyeon Cho
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC ARRAY, CONTROL METHOD FOR MAGNETIC ARRAY, AND OPERATION PR...
- Publication number 20250182804
- Publication date Jun 5, 2025
- TDK Corporation
- Shogo YAMADA
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ORBIT TORQUE MATERIALS, MAGNETIC MEMORY DEVICE INCLUDING THE S...
- Publication number 20250176440
- Publication date May 29, 2025
- Samsung Electronics Co., Ltd.
- Won Joon CHO
- G11 - INFORMATION STORAGE
Information Patent Application
SOT MRAM INCLUDING MTJ AND SELECTOR LOCATED ON OPPOSITE SIDES OF SO...
- Publication number 20250176439
- Publication date May 29, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Jeffrey LILLE
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...
- Publication number 20250176438
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS
- Publication number 20250169372
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD OF IMPLEMENTING A PROBABILISTIC BIT (P-BIT) CI...
- Publication number 20250169370
- Publication date May 22, 2025
- KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS
- Saleh Ahmad S BUNAIYAN
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING...
- Publication number 20250166683
- Publication date May 22, 2025
- Sony Semiconductor Solutions Corporation
- HIROYUKI UCHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
READ OFFSET COMPENSATOR FOR ADJUSTING REFERENCE RESISTANCE USING CO...
- Publication number 20250166685
- Publication date May 22, 2025
- Samsung Electronics Co., Ltd.
- Gyuseong KANG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE
- Publication number 20250169368
- Publication date May 22, 2025
- UNITED MICROELECTRONICS CORP.
- Chau-Chung Hou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20250160217
- Publication date May 15, 2025
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...
- Publication number 20250160218
- Publication date May 15, 2025
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250157516
- Publication date May 15, 2025
- Samsung Electronics Co., Ltd.
- Yongjae Lee
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND METHOD FOR MRAM DEVICES HAVING SPACER ELEMENT
- Publication number 20250151630
- Publication date May 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Ku SHEN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20250140295
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Harry-Hak-Lay CHUANG
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR DETECTING NETWORK OUTAGES
- Publication number 20250142000
- Publication date May 1, 2025
- T-Mobile USA, Inc.
- Shon Lonkar
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-ORBIT TORQUE MAGNETORESISTIVE MEMORY STRUCTURE
- Publication number 20250133968
- Publication date Apr 24, 2025
- NATIONAL APPLIED RESEARCH LABORATORIES
- Ya-Jui Tsou
- G11 - INFORMATION STORAGE
Information Patent Application
OPTICAL SENSOR
- Publication number 20250133851
- Publication date Apr 24, 2025
- TDK Corporation
- Hideaki FUKUZAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...
- Publication number 20250127061
- Publication date Apr 17, 2025
- Samsung Electronics Co., Ltd.
- Kwangseok KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH UNIPOLAR SELECTORS
- Publication number 20250120093
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Katherine H. Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME
- Publication number 20250120092
- Publication date Apr 10, 2025
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20250120322
- Publication date Apr 10, 2025
- Sony Semiconductor Solutions Corporation
- YUTAKA HIGO
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250120323
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Nien-Yu Tai
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-TAPERED MRAM DEVICE STRUCTURE
- Publication number 20250120324
- Publication date Apr 10, 2025
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIZED ROTARY ELEMENT, MAGNETORESISTIVE ELEMENT, AND MAGNETIC M...
- Publication number 20250113740
- Publication date Apr 3, 2025
- TDK Corporation
- Takuya ASHIDA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH DUAL-SIDE ACCESS CIRCUITS AND METHODS FOR OPERA...
- Publication number 20250111869
- Publication date Apr 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung-Cheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DEVICE WITH TUNNEL BARRIER OVERHANG
- Publication number 20250107452
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Oscar van der Straten
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20250098545
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Kenji FUKUDA
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN MEMORY ENCRYPTION
- Publication number 20250098546
- Publication date Mar 20, 2025
- Colorado State University Research Foundation
- Kristen Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20250095706
- Publication date Mar 20, 2025
- KIOXIA Corporation
- Hiroaki MAEKAWA
- G11 - INFORMATION STORAGE

details concerning the memory cell structure

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods of writing and forming memory device

SOT-MRAM with shared selector

Matrix-vector multiplication using SOT-based non-volatile memory cells

Magnetoresistive memory device and manufacturing method thereof

Magnetic memory using spin-orbit torque

Stacked spin-orbit-torque magnetoresistive random-access memory

Structure and method for an MRAM device with a multi-layer top elec...

Magnetic tunneling junction device and memory device including the...

Magnetoresistance memory device and method of manufacturing magneto...

Cross-point array refresh scheme

Ion beam etching with sidewall cleaning

Memory device and semiconductor die, and method of fabricating memo...

Magnetic tunnel junction devices

Magnetic tunnel junction devices

Magnetic random access memory structure

Method for writing to magnetic random access memory

Memory device, and semiconductor structure and forming method thereof

Magnetic memory device

Magnetization rotational element, magnetoresistance effect element,...

Magnetic memory device and method of operating the same

Magnetoresistance effect element, magnetic recording element, and h...

Memory device structure and manufacturing method thereof

Spin-transfer torque magnetoresistive memory device with a free lay...

Memory device

Semiconductor structure and method for forming the same

Modified top electrode contact for MRAM embedding in advanced logic...

Semiconductor device and method for fabricating the same

Spin injection source, magnetic memory, spin hall oscillator, compu...

Logic element using spin-orbit torque and magnetic tunnel junction...

Multiferroic memory with piezoelectric layers and related methods

Patents Applicationslast 30 patents

MAGNETIC MEMORY DEVICE AND METHOD OF OPERATING THE SAME

MAGNETIC ARRAY, CONTROL METHOD FOR MAGNETIC ARRAY, AND OPERATION PR...

SPIN ORBIT TORQUE MATERIALS, MAGNETIC MEMORY DEVICE INCLUDING THE S...

SOT MRAM INCLUDING MTJ AND SELECTOR LOCATED ON OPPOSITE SIDES OF SO...

SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...

PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS

APPARATUS AND METHOD OF IMPLEMENTING A PROBABILISTIC BIT (P-BIT) CI...

STORAGE DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING...

READ OFFSET COMPENSATOR FOR ADJUSTING REFERENCE RESISTANCE USING CO...

METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE

MAGNETORESISTIVE RANDOM ACCESS MEMORY

SPIN-ORBIT TORQUE TYPE MAGNETORESISTANCE EFFECT ELEMENT, AND METHOD...

MAGNETIC MEMORY DEVICE

STRUCTURE AND METHOD FOR MRAM DEVICES HAVING SPACER ELEMENT

METHOD FOR FORMING SEMICONDUCTOR DEVICE

SYSTEMS AND METHODS FOR DETECTING NETWORK OUTAGES

SPIN-ORBIT TORQUE MAGNETORESISTIVE MEMORY STRUCTURE

OPTICAL SENSOR

MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE...

MEMORY CELL WITH UNIPOLAR SELECTORS

MRAM STRUCTURE AND FABRICATING METHOD OF THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MULTI-TAPERED MRAM DEVICE STRUCTURE

MAGNETIZED ROTARY ELEMENT, MAGNETORESISTIVE ELEMENT, AND MAGNETIC M...

MEMORY DEVICES WITH DUAL-SIDE ACCESS CIRCUITS AND METHODS FOR OPERA...

MRAM DEVICE WITH TUNNEL BARRIER OVERHANG

MAGNETIC MEMORY DEVICE

SPIN MEMORY ENCRYPTION

SEMICONDUCTOR STORAGE DEVICE