Diodes

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H01L29/66204

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66204Diodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor by-pass switch
- Patent number 12,132,124
- Issue date Oct 29, 2024
- Marvin Motsenbocker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer, method of manufacturing the epitaxial wafer, diode...
- Patent number 12,087,868
- Issue date Sep 10, 2024
- South China Normal University
- Richard Notzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for implant and anneal for high voltage field effect transis...
- Patent number 12,068,161
- Issue date Aug 20, 2024
- Power Integrations, Inc.
- James R. Shealy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked III-V semiconductor diode
- Patent number 11,769,839
- Issue date Sep 26, 2023
- 3-5 Power Electronics GmbH
- Jens Kowalsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices with an engineered substrate
- Patent number 11,735,460
- Issue date Aug 22, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power amplifier module
- Patent number 11,621,678
- Issue date Apr 4, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based threshold switching device and memory diode
- Patent number 11,527,573
- Issue date Dec 13, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Kai Fu
- G11 - INFORMATION STORAGE
Information Patent Grant
Plasma-based edge terminations for gallium nitride power devices
- Patent number 11,417,529
- Issue date Aug 16, 2022
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mapping and evaluating GaN wafers for vertical device applications
- Patent number 11,415,518
- Issue date Aug 16, 2022
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device structure
- Patent number 11,282,702
- Issue date Mar 22, 2022
- Imec VZW
- Philippe Soussan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of lateral superjunction devices using selective epitaxy
- Patent number 11,121,211
- Issue date Sep 14, 2021
- The Texas A&M University System
- Michael Everett Babb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing vertical semiconductor diodes using an eng...
- Patent number 11,107,720
- Issue date Aug 31, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip contact structure, device assembly, and method o...
- Patent number 11,094,614
- Issue date Aug 17, 2021
- Littelfuse, Inc.
- Stefan Steinhoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based threshold switching device and memory diode
- Patent number 10,964,749
- Issue date Mar 30, 2021
- Arizona Board of Regents on behalf of Arizona State University
- Kai Fu
- G11 - INFORMATION STORAGE
Information Patent Grant
Tight integrated vertical transistor dual diode structure for elect...
- Patent number 10,916,537
- Issue date Feb 9, 2021
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power amplifier module
- Patent number 10,903,803
- Issue date Jan 26, 2021
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device including zener diode and method of manufactur...
- Patent number 10,868,198
- Issue date Dec 15, 2020
- Vanguard International Semiconductor Corporation
- Priyono Tri Sulistyanto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,854,727
- Issue date Dec 1, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked III-V semiconductor diode
- Patent number 10,854,760
- Issue date Dec 1, 2020
- 3-5 Power Electronics GmbH
- Volker Dudek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked III-V semiconductor component
- Patent number 10,847,626
- Issue date Nov 24, 2020
- 3-5 Power Electronics GmbH
- Volker Dudek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-series varactor EPI
- Patent number 10,833,071
- Issue date Nov 10, 2020
- Qorvo US, Inc.
- Peter V. Wright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device and a semiconductor d...
- Patent number 10,825,734
- Issue date Nov 3, 2020
- 3-5 Power Electronics GmbH
- Volker Dudek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked III-V semiconductor component
- Patent number 10,784,381
- Issue date Sep 22, 2020
- 3-5 Power Electronics GmbH
- Volker Dudek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-I-N diode and connected group III-N device and their methods of f...
- Patent number 10,770,551
- Issue date Sep 8, 2020
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked III-V semiconductor component
- Patent number 10,749,044
- Issue date Aug 18, 2020
- 3-5 Power Electronics GmbH
- Volker Dudek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor diode
- Patent number 10,734,532
- Issue date Aug 4, 2020
- 3-5 Power Electronics GmbH
- Volker Dudek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,685,841
- Issue date Jun 16, 2020
- HOSEI UNIVERSITY
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including implanting i...
- Patent number 10,636,663
- Issue date Apr 28, 2020
- Toyoda Gosei Co., Ltd.
- Takahiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power amplifier module
- Patent number 10,594,271
- Issue date Mar 17, 2020
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,566,439
- Issue date Feb 18, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048713
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Zhiwen DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS
- Publication number 20240047201
- Publication date Feb 8, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Guy FEUILLET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Anti-fuse
- Publication number 20220393036
- Publication date Dec 8, 2022
- Marvin Motsenbocker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE S...
- Publication number 20220285504
- Publication date Sep 8, 2022
- Fuji Electric Co., Ltd.
- Ryo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER, METHOD OF MANUFACTURING THE EPITAXIAL WAFER, DIODE...
- Publication number 20220254939
- Publication date Aug 11, 2022
- SOUTH CHINA NORMAL UNIVERSITY
- Richard NOTZEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXY
- Publication number 20210376067
- Publication date Dec 2, 2021
- THE TEXAS A&M UNIVERSITY SYSTEM
- Michael Everett Babb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE
- Publication number 20210358795
- Publication date Nov 18, 2021
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED HIGH-BLOCKING INGAAS SEMICONDUCTOR POWER DIODE
- Publication number 20210296509
- Publication date Sep 23, 2021
- AZUR SPACE SOLAR POWER GMBH
- Thorsten WIERZKOWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE
- Publication number 20210242281
- Publication date Aug 5, 2021
- Kai Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER AMPLIFIER MODULE
- Publication number 20210126591
- Publication date Apr 29, 2021
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20210111021
- Publication date Apr 15, 2021
- IMEC vzw
- Philippe SOUSSAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CHIP CONTACT STRUCTURE, DEVICE ASSEMBLY, AND METHOD O...
- Publication number 20210090972
- Publication date Mar 25, 2021
- LITTELFUSE, INC.
- Stefan Steinhoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXY
- Publication number 20210036103
- Publication date Feb 4, 2021
- THE TEXAS A&M UNIVERSITY SYSTEM
- Michael Everett Babb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mapping and Evaluating GaN Wafers for Vertical Device Applications
- Publication number 20200400578
- Publication date Dec 24, 2020
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- G01 - MEASURING TESTING
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20200273965
- Publication date Aug 27, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER AMPLIFIER MODULE
- Publication number 20200177140
- Publication date Jun 4, 2020
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE
- Publication number 20200144328
- Publication date May 7, 2020
- Kai Fu
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF MANUFACTURING VERTICAL SEMICONDUCTOR DIODES USING AN ENG...
- Publication number 20200111698
- Publication date Apr 9, 2020
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Application
P-I-N DIODE AND CONNECTED GROUP III-N DEVICE AND THEIR METHODS OF F...
- Publication number 20200066849
- Publication date Feb 27, 2020
- Intel Corporation
- HAN WUI THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20190348522
- Publication date Nov 14, 2019
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR DIODE
- Publication number 20190326446
- Publication date Oct 24, 2019
- 3-5 Power Electronics GmbH
- Volker DUDEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC POWER DEVICES INTEGRATED WITH AN ENGINEERED SUBSTRATE
- Publication number 20190326148
- Publication date Oct 24, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER AMPLIFIER MODULE
- Publication number 20190296699
- Publication date Sep 26, 2019
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED III-V SEMICONDUCTOR COMPONENT
- Publication number 20190198625
- Publication date Jun 27, 2019
- 3-5 Power Electronics GmbH
- Volker DUDEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DIODE MANUFACTURED WITH AN ENGINEERED SUBSTRATE
- Publication number 20190122916
- Publication date Apr 25, 2019
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190096879
- Publication date Mar 28, 2019
- Nuvoton Technology Corporation
- Chih-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-SERIES VARACTOR EPI
- Publication number 20180374846
- Publication date Dec 27, 2018
- Qorvo US, Inc.
- Peter V. Wright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER AMPLIFIER MODULE
- Publication number 20180309417
- Publication date Oct 25, 2018
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ZENER DIODE AND METHOD OF MANUFACTUR...
- Publication number 20180175215
- Publication date Jun 21, 2018
- Vanguard International Semiconductor Corporation
- Priyono Tri SULISTYANTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20180166556
- Publication date Jun 14, 2018
- Nexgen Power Systems, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor by-pass switch

Epitaxial wafer, method of manufacturing the epitaxial wafer, diode...

Method for implant and anneal for high voltage field effect transis...

Stacked III-V semiconductor diode

Integrated circuit devices with an engineered substrate

Semiconductor device and power amplifier module

GaN-based threshold switching device and memory diode

Plasma-based edge terminations for gallium nitride power devices

Mapping and evaluating GaN wafers for vertical device applications

Method of forming a semiconductor device structure

Fabrication of lateral superjunction devices using selective epitaxy

Methods of manufacturing vertical semiconductor diodes using an eng...

Semiconductor chip contact structure, device assembly, and method o...

GaN-based threshold switching device and memory diode

Tight integrated vertical transistor dual diode structure for elect...

Semiconductor device and power amplifier module

Semiconductor device including zener diode and method of manufactur...

High power gallium nitride electronics using miscut substrates

Stacked III-V semiconductor diode

Stacked III-V semiconductor component

Dual-series varactor EPI

Method for fabricating a semiconductor device and a semiconductor d...

Stacked III-V semiconductor component

P-I-N diode and connected group III-N device and their methods of f...

Stacked III-V semiconductor component

III-V semiconductor diode

Semiconductor device

Method of manufacturing semiconductor device including implanting i...

Semiconductor device and power amplifier module

High power gallium nitride electronics using miscut substrates

Patents Applicationslast 30 patents

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

METHOD FOR PRODUCING III-N MATERIAL-BASED VERTICAL COMPONENTS

Semiconductor Anti-fuse

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE S...

EPITAXIAL WAFER, METHOD OF MANUFACTURING THE EPITAXIAL WAFER, DIODE...

FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXY

INTEGRATED CIRCUIT DEVICES WITH AN ENGINEERED SUBSTRATE

STACKED HIGH-BLOCKING INGAAS SEMICONDUCTOR POWER DIODE

GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE

SEMICONDUCTOR DEVICE AND POWER AMPLIFIER MODULE

METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE

SEMICONDUCTOR CHIP CONTACT STRUCTURE, DEVICE ASSEMBLY, AND METHOD O...

FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXY

Mapping and Evaluating GaN Wafers for Vertical Device Applications

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

SEMICONDUCTOR DEVICE AND POWER AMPLIFIER MODULE

GaN-BASED THRESHOLD SWITCHING DEVICE AND MEMORY DIODE

METHODS OF MANUFACTURING VERTICAL SEMICONDUCTOR DIODES USING AN ENG...

P-I-N DIODE AND CONNECTED GROUP III-N DEVICE AND THEIR METHODS OF F...

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

III-V SEMICONDUCTOR DIODE

ELECTRONIC POWER DEVICES INTEGRATED WITH AN ENGINEERED SUBSTRATE

SEMICONDUCTOR DEVICE AND POWER AMPLIFIER MODULE

STACKED III-V SEMICONDUCTOR COMPONENT

VERTICAL SEMICONDUCTOR DIODE MANUFACTURED WITH AN ENGINEERED SUBSTRATE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

DUAL-SERIES VARACTOR EPI

SEMICONDUCTOR DEVICE AND POWER AMPLIFIER MODULE

SEMICONDUCTOR DEVICE INCLUDING ZENER DIODE AND METHOD OF MANUFACTUR...

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES