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H01L29/0873

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0873Drain regions

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 12,154,948
- Issue date Nov 26, 2024
- SK Hynix Inc.
- Seong-Wan Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused field-effect transistor
- Patent number 12,154,972
- Issue date Nov 26, 2024
- NEXCHIP SEMICONDUCTOR CORPORATION
- Menghui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage extended-drain MOS (EDMOS) nanowire transistors
- Patent number 12,040,395
- Issue date Jul 16, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 11,942,541
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hong-Shyang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,923,416
- Issue date Mar 5, 2024
- SK Hynix Inc.
- Seong-Wan Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with gate extensions
- Patent number 11,908,891
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhih-Bin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 11,855,210
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate and drift design for high-critical field strength...
- Patent number 11,695,040
- Issue date Jul 4, 2023
- United States of America as represented by the Secretary of the Air Force
- Kelson D Chabak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with low random telegraph signal noise
- Patent number 11,569,346
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Kuo-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-transistor device including first and second LDMOS transistor...
- Patent number 11,557,588
- Issue date Jan 17, 2023
- Maxim Integrated Products, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,508,844
- Issue date Nov 22, 2022
- Nexperia B.V.
- Soenke Habenicht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate and drift design for high-critical field strength...
- Patent number 11,398,551
- Issue date Jul 26, 2022
- United States of America as represented by the Secretary of the Air Force
- Kelson D Chabak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 11,380,761
- Issue date Jul 5, 2022
- SK Hynix Inc.
- Seong-Wan Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with gate extensions
- Patent number 11,329,128
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhih-Bin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and switch element and light-emitting element using...
- Patent number 11,309,389
- Issue date Apr 19, 2022
- LX Semicon Co., Ltd.
- Seok Min Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 11,251,303
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,171,222
- Issue date Nov 9, 2021
- MagnaChip Semiconductor, Ltd.
- Guk Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with low random telegraph signal noise
- Patent number 11,075,267
- Issue date Jul 27, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Kuo-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming bottom source and drain extension on vertical transport FET...
- Patent number 11,063,147
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, comprising an insulated gate field effect tra...
- Patent number 11,031,480
- Issue date Jun 8, 2021
- K.Eklund Innovation
- Klas-Håkan Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused field-effect transistor and method of fabricating same
- Patent number 11,024,722
- Issue date Jun 1, 2021
- NEXCHIP SEMICONDUCTOR CORPORATION
- Menghui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, inverter circuit, driving device, vehicle, an...
- Patent number 10,998,400
- Issue date May 4, 2021
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 10,998,442
- Issue date May 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-transistor device including first and second LDMOS transistor...
- Patent number 10,964,694
- Issue date Mar 30, 2021
- Maxim Integrated Products, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with low gate charge and low figure of merit
- Patent number 10,957,791
- Issue date Mar 23, 2021
- Infineon Technologies Americas Corp.
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally double diffused metal oxide semiconductor (LDMOS) device...
- Patent number 10,930,777
- Issue date Feb 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Ignasi Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric transistors and related devices and methods
- Patent number 10,916,652
- Issue date Feb 9, 2021
- Intel Corporation
- Yen Chun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate driver integrated circuit
- Patent number 10,756,193
- Issue date Aug 25, 2020
- NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION
- Weicheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried gate structure and method for fa...
- Patent number 10,741,643
- Issue date Aug 11, 2020
- SK hynix Inc.
- Seong-Wan Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with self-aligned isolation
- Patent number 10,707,346
- Issue date Jul 7, 2020
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240258423
- Publication date Aug 1, 2024
- Sanan Japan Technology Corporation
- Sunao Aya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20240213320
- Publication date Jun 27, 2024
- SK HYNIX INC.
- Seong-Wan RYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS
- Publication number 20240136397
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhih-Bin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD
- Publication number 20240113099
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Lin HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED
- Publication number 20240097034
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055473
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTOR CIRCUIT MODIFICATION USING DIRECT CONTAC...
- Publication number 20240006302
- Publication date Jan 4, 2024
- Intel Corporation
- Richard H. Livengood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMPLIFIER CIRCUIT
- Publication number 20230402451
- Publication date Dec 14, 2023
- Sumitomo Electric Industries, Ltd.
- Koshi HAMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, AND MULTI-VALUED LOGIC DE...
- Publication number 20230335557
- Publication date Oct 19, 2023
- Samsung Electronics Co., Ltd.
- Sungil PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230095477
- Publication date Mar 30, 2023
- DENSO CORPORATION
- KOZO KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230061900
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HONG-SHYANG WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20220293734
- Publication date Sep 15, 2022
- SK HYNIX INC.
- Seong-Wan RYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS
- Publication number 20220262899
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhih-Bin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Strained Structure and Structure Formed
- Publication number 20220173245
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUGGED LDMOS WITH DRAIN-TIED FIELD PLATE
- Publication number 20220149186
- Publication date May 12, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20210367064
- Publication date Nov 25, 2021
- Hua Hong Semiconductor (Wuxi) Limited
- Junwen LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW RANDOM TELEGRAPH SIGNAL NOISE
- Publication number 20210343838
- Publication date Nov 4, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- KUO-YU CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Gate and Drift Design for High-Critical Field Strength...
- Publication number 20210234001
- Publication date Jul 29, 2021
- Government of the United States, as represented by the Secretary of the Air F...
- Kelson D Chabak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSED FIELD-EFFECT TRANSISTOR
- Publication number 20210217878
- Publication date Jul 15, 2021
- Nexchip Semiconductor Corporation
- Menghui WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TRANSISTOR DEVICES
- Publication number 20210217748
- Publication date Jul 15, 2021
- Maxim Integrated Products, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Device with Low Gate Charge and Low Figure of Merit
- Publication number 20210193826
- Publication date Jun 24, 2021
- Infineon Technologies Americas Corp.
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE EXTENDED-DRAIN MOS (EDMOS) NANOWIRE TRANSISTORS
- Publication number 20210184032
- Publication date Jun 17, 2021
- Intel Corporation
- Nidhi NIDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, COMPRISING AN INSULATED GATE FIELD EFFECT TRA...
- Publication number 20210083066
- Publication date Mar 18, 2021
- K.EKLUND INNOVATION
- Klas-Håkan EKLUND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS
- Publication number 20210066451
- Publication date Mar 4, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhih-Bin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Strained Structure and Structure Formed
- Publication number 20200365736
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Gate and Drift Design for High-Critical Field Strength...
- Publication number 20200357887
- Publication date Nov 12, 2020
- Government of the United States, as represented by the Secretary of the Air F...
- Kelson D Chabak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...
- Publication number 20200335584
- Publication date Oct 22, 2020
- SK HYNIX INC.
- Seong-Wan RYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH SELF-ALIGNED ISOLATION
- Publication number 20200295190
- Publication date Sep 17, 2020
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE WITH LOW GATE CHARGE AND LOW FIGURE OF MERIT
- Publication number 20200287038
- Publication date Sep 10, 2020
- Infineon Technologies Americas Corp.
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20200251575
- Publication date Aug 6, 2020
- Magnachip Semiconductor, Ltd.
- Guk Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS

Drain regions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device having buried gate structure and method for fa...

Diffused field-effect transistor

High voltage extended-drain MOS (EDMOS) nanowire transistors

Semiconductor device and method for forming the same

Semiconductor device having buried gate structure and method for fa...

High voltage device with gate extensions

Method for fabricating a strained structure and structure formed

Self-aligned gate and drift design for high-critical field strength...

Semiconductor device with low random telegraph signal noise

Multi-transistor device including first and second LDMOS transistor...

Semiconductor device

Self-aligned gate and drift design for high-critical field strength...

Semiconductor device having buried gate structure and method for fa...

High voltage device with gate extensions

Epitaxial wafer and switch element and light-emitting element using...

Method for fabricating a strained structure and structure formed

Semiconductor device and manufacturing method thereof

Semiconductor device with low random telegraph signal noise

Forming bottom source and drain extension on vertical transport FET...

Semiconductor device, comprising an insulated gate field effect tra...

Diffused field-effect transistor and method of fabricating same

Semiconductor device, inverter circuit, driving device, vehicle, an...

Method for fabricating a strained structure and structure formed

Multi-transistor device including first and second LDMOS transistor...

Power device with low gate charge and low figure of merit

Laterally double diffused metal oxide semiconductor (LDMOS) device...

Asymmetric transistors and related devices and methods

Gate driver integrated circuit

Semiconductor device having buried gate structure and method for fa...

High-voltage transistor with self-aligned isolation

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS

INTEGRATED CIRCUIT PROTECTION DEVICE AND METHOD

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

GATE-ALL-AROUND TRANSISTOR CIRCUIT MODIFICATION USING DIRECT CONTAC...

AMPLIFIER CIRCUIT

SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT, AND MULTI-VALUED LOGIC DE...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS

Method for Fabricating a Strained Structure and Structure Formed

RUGGED LDMOS WITH DRAIN-TIED FIELD PLATE

LDMOS DEVICE AND METHOD FOR MAKING THE SAME

SEMICONDUCTOR DEVICE WITH LOW RANDOM TELEGRAPH SIGNAL NOISE

Self-Aligned Gate and Drift Design for High-Critical Field Strength...

DIFFUSED FIELD-EFFECT TRANSISTOR

MULTI-TRANSISTOR DEVICES

Power Device with Low Gate Charge and Low Figure of Merit

HIGH VOLTAGE EXTENDED-DRAIN MOS (EDMOS) NANOWIRE TRANSISTORS

SEMICONDUCTOR DEVICE, COMPRISING AN INSULATED GATE FIELD EFFECT TRA...

HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS

Method for Fabricating a Strained Structure and Structure Formed

Self-Aligned Gate and Drift Design for High-Critical Field Strength...

SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FA...

HIGH-VOLTAGE TRANSISTOR WITH SELF-ALIGNED ISOLATION

POWER DEVICE WITH LOW GATE CHARGE AND LOW FIGURE OF MERIT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF