Electrodes

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H01L45/1253

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

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H01L45/1253Electrodes

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Patents Grantslast 30 patents

Information Patent Grant
Electronic device
- Patent number 11,716,911
- Issue date Aug 1, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising threshold switching materials
- Patent number 11,672,191
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,672,131
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Yumin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional semiconductor memory devices
- Patent number 11,665,914
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Si-Ho Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite electrode material chemistry
- Patent number 11,659,778
- Issue date May 23, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selector device and method of making the same
- Patent number 11,659,781
- Issue date May 23, 2023
- Huazhong University of Science & Technology
- Xiangshui Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM device structure and manufacturing method
- Patent number 11,653,581
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with double protective liner
- Patent number 11,647,638
- Issue date May 9, 2023
- Intel Corporation
- Anna Maria Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive interface material
- Patent number 11,641,788
- Issue date May 2, 2023
- Micron Technology, Inc.
- Andrea Gotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,637,240
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsing-Lien Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-component cell architectures for a memory device
- Patent number 11,637,145
- Issue date Apr 25, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Bottom electrode structure in memory device
- Patent number 11,631,810
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Yang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-memory resistive random access memory XOR logic using compliment...
- Patent number 11,631,809
- Issue date Apr 18, 2023
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device
- Patent number 11,631,812
- Issue date Apr 18, 2023
- SK Hynix Inc.
- Hwang Yeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory array with memory cells having a 3D selector and a storag...
- Patent number 11,631,717
- Issue date Apr 18, 2023
- Intel Corporation
- Charles Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Efficient fabrication of memory structures
- Patent number 11,626,452
- Issue date Apr 11, 2023
- Micron Technology, Inc.
- Don Koun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory devices and methods of fabrication
- Patent number 11,621,395
- Issue date Apr 4, 2023
- Intel Corporation
- Nathan Strutt
- G11 - INFORMATION STORAGE
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Low current RRAM-based crossbar array circuit implemented with swit...
- Patent number 11,616,196
- Issue date Mar 28, 2023
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,616,197
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Ja Bin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory arrays, and methods of forming the same
- Patent number 11,616,098
- Issue date Mar 28, 2023
- Micron Technology, Inc.
- Lingming Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell, method of forming the same, and semiconductor die
- Patent number 11,605,779
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual resistive random-access memory with two transistors
- Patent number 11,605,673
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance variable device with chalcogen-containing layer
- Patent number 11,600,772
- Issue date Mar 7, 2023
- Kioxia Corporation
- Hiroki Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and operating method of the same
- Patent number 11,600,774
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,600,664
- Issue date Mar 7, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240237565
- Publication date Jul 11, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY
- Publication number 20240215462
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE
- Publication number 20240188455
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Timothy Mathew Philip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...
- Publication number 20240164224
- Publication date May 16, 2024
- United Microelectronics Corp.
- Kai-Jiun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS-INDUCED FORMING OF OXIDE RRAM
- Publication number 20240155952
- Publication date May 9, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY ELEMENTS ACCESSED BY BIPOLAR JUNCTION TRANSISTORS
- Publication number 20240147736
- Publication date May 2, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THINNED PHASE CHANGE MATERIAL IN BRIDGE CELL MEMORY AS A WEIGHT FOR...
- Publication number 20240147876
- Publication date May 2, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG PROGRAMMABLE RESISTIVE MEMORY
- Publication number 20240138275
- Publication date Apr 25, 2024
- CYBERSWARM, INC.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY CELL WITH HEATER
- Publication number 20240130256
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240130254
- Publication date Apr 18, 2024
- United Microelectronics Corp.
- Yen-Min TING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...
- Publication number 20240112730
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
- Publication number 20240112731
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...
- Publication number 20240114813
- Publication date Apr 4, 2024
- TetraMem Inc.
- Mingche Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240107902
- Publication date Mar 28, 2024
- UNITED MICROELECTRONICS CORP.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...
- Publication number 20240099163
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER
- Publication number 20240090352
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074334
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE MEMORY DEVICE
- Publication number 20240065119
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICES WITH A CAVITY BETWEEN ELECTRODES
- Publication number 20240049611
- Publication date Feb 8, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- CURTIS CHUN-I HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH HIGH WORK FUNCTION CAP
- Publication number 20240040940
- Publication date Feb 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240040938
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A MEMORY DEVICE AT A BACKSIDE OF A WAFER SUBSTRA...
- Publication number 20240023463
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES
- Publication number 20240023466
- Publication date Jan 18, 2024
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LAYER OVONIC THRESHOLD SWITCH (OTS) FOR SWITCHING DEVICES AND...
- Publication number 20240015987
- Publication date Jan 11, 2024
- Macronix International Co., Ltd.
- Huai-Yu CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240006304
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM DEVICE
- Publication number 20240008373
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chang-Chih Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ULTRA-THIN PCM CELL
- Publication number 20240008374
- Publication date Jan 4, 2024
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240008375
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING BARRIER LAYER BETWEEN ELECTRODE L...
- Publication number 20230422639
- Publication date Dec 28, 2023
- Intel Corporation
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS-COMPATIBLE RRAM DEVICES
- Publication number 20230422641
- Publication date Dec 28, 2023
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electronic device

Semiconductor devices comprising threshold switching materials

Two-terminal reversibly switchable memory device

Memory device and method of manufacturing the same

Three dimensional semiconductor memory devices

Composite electrode material chemistry

Selector device and method of making the same

RRAM device structure and manufacturing method

Non-volatile memory structure with positioned doping

Oxide-based resistive memory having a plasma-exposed bottom electrode

Memory device with double protective liner

Resistive interface material

Semiconductor structure and method for forming the same

Multi-component cell architectures for a memory device

Bottom electrode structure in memory device

In-memory resistive random access memory XOR logic using compliment...

Electronic device

3D memory array with memory cells having a 3D selector and a storag...

Efficient fabrication of memory structures

Resistive random-access memory devices and methods of fabrication

Stackable symmetrical operation memory bit cell structure with bidi...

Low current RRAM-based crossbar array circuit implemented with swit...

Variable resistance memory device

Three-dimensional memory arrays, and methods of forming the same

Resistive random access memory device

Memory cell, method of forming the same, and semiconductor die

Dual resistive random-access memory with two transistors

Resistance variable device with chalcogen-containing layer

Nonvolatile memory device and operating method of the same

Memory devices and methods of forming memory devices

Patents Applicationslast 30 patents

ANALOG PROGRAMMABLE RESISTIVE MEMORY

MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY

PROXIMITY HEATER TO LOWER RRAM FORMING VOLTAGE

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...

PROCESS-INDUCED FORMING OF OXIDE RRAM

RESISTIVE MEMORY ELEMENTS ACCESSED BY BIPOLAR JUNCTION TRANSISTORS

THINNED PHASE CHANGE MATERIAL IN BRIDGE CELL MEMORY AS A WEIGHT FOR...

ANALOG PROGRAMMABLE RESISTIVE MEMORY

PHASE CHANGE MEMORY CELL WITH HEATER

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...

MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT

CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...

RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Hydrogen and Hydrocarbon Plasma Treatment of Phase Change Memory Ma...

RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER

PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

VERTICAL PHASE CHANGE MEMORY DEVICE

RESISTIVE MEMORY DEVICES WITH A CAVITY BETWEEN ELECTRODES

RRAM WITH HIGH WORK FUNCTION CAP

MEMORY DEVICE AND FABRICATION METHOD THEREOF

METHOD FOR FORMING A MEMORY DEVICE AT A BACKSIDE OF A WAFER SUBSTRA...

FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES

MULTI-LAYER OVONIC THRESHOLD SWITCH (OTS) FOR SWITCHING DEVICES AND...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

PCM DEVICE

VERTICAL ULTRA-THIN PCM CELL

MEMORY DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR STRUCTURE INCLUDING BARRIER LAYER BETWEEN ELECTRODE L...

CMOS-COMPATIBLE RRAM DEVICES