Epitaxial deposition of elements of the Fourth Group of the Periodic System

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H01L21/2033

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/2033Epitaxial deposition of elements of the Fourth Group of the Periodic System

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including a Fin-FET and method of manufacturin...
- Patent number 11,728,414
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated photonics including waveguiding material
- Patent number 11,703,643
- Issue date Jul 18, 2023
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor device including a Fin-FET and method of manufacturin...
- Patent number 11,373,910
- Issue date Jun 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 11,251,271
- Issue date Feb 15, 2022
- Fuji Electric Co., Ltd.
- Takumi Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a Fin-FET and method of manufacturin...
- Patent number 11,251,087
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing epitaxial silicon wafer
- Patent number 11,198,949
- Issue date Dec 14, 2021
- Sumco Corporation
- Masayuki Tsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor on insulator type structure...
- Patent number 11,127,624
- Issue date Sep 21, 2021
- Soitec
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smoothed doped layer for solar cell
- Patent number 11,075,317
- Issue date Jul 27, 2021
- Imec VZW
- Yuandong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated photonics including germanium
- Patent number 10,830,952
- Issue date Nov 10, 2020
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Grant
Semiconductor device including a Fin-FET and method of manufacturin...
- Patent number 10,685,884
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yasutoshi Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated photonics including waveguiding material
- Patent number 10,571,631
- Issue date Feb 25, 2020
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Integrated photonics including germanium
- Patent number 10,295,745
- Issue date May 21, 2019
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Grant
Integrated method for wafer outgassing reduction
- Patent number 10,043,667
- Issue date Aug 7, 2018
- Applied Materials, Inc.
- Chun Yan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of doped germanium formation
- Patent number 9,966,438
- Issue date May 8, 2018
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated photonics including germanium
- Patent number 9,864,138
- Issue date Jan 9, 2018
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Grant
Structures having isolated graphene layers with a reduced dimension
- Patent number 9,768,026
- Issue date Sep 19, 2017
- Solan, LLC
- Mark Alan Davis
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods for fabricating refined graphite-based structures and devic...
- Patent number 9,478,422
- Issue date Oct 25, 2016
- Solan, LLC
- Mark Alan Davis
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device comprising epitaxially grown semiconductor mat...
- Patent number 9,269,724
- Issue date Feb 23, 2016
- STC.UNM
- Sang M. Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon heterojunction solar cells
- Patent number 9,257,284
- Issue date Feb 9, 2016
- Crystal Solar, Incorporated
- Kramadhati V. Ravi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor arrangement and formation thereof
- Patent number 9,252,217
- Issue date Feb 2, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxial overgrowth comprising air gaps
- Patent number 8,937,366
- Issue date Jan 20, 2015
- STC.UNM
- Sang M. Han
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Monocrystalline three-dimensional integrated-circuit technology
- Patent number 6,344,116
- Issue date Feb 5, 2002
- Raymond M. Warner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline three-dimensional integrated circuit
- Patent number 5,937,318
- Issue date Aug 10, 1999
- Raymond M. Warner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline three-dimensional integrated circuit
- Patent number 5,089,862
- Issue date Feb 18, 1992
- Raymond M. Warner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating MOS field effect transistor
- Patent number 4,838,993
- Issue date Jun 13, 1989
- Seiko Instruments Inc.
- Kenji Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure with self-aligned device and isolation...
- Patent number 4,738,624
- Issue date Apr 19, 1988
- International Business Machines Corporation
- Subramanian S. Iyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio, high resolution mask fabrication
- Patent number 4,293,374
- Issue date Oct 6, 1981
- International Business Machines Corporation
- Praveen Chaudhari
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
3108919
- Patent number 3,108,919
- Issue date Oct 29, 1963
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FORMING AN EPITAXIAL WAFER
- Publication number 20220359195
- Publication date Nov 10, 2022
- GLOBALWAFERS CO., LTD.
- Maria Porrini
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...
- Publication number 20220172998
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yasutoshi OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ON INSULATOR STRUCTURE FOR A FRONT SIDE TYPE IMAGER
- Publication number 20210366763
- Publication date Nov 25, 2021
- SOITEC
- Walter Schwarzenbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20210167173
- Publication date Jun 3, 2021
- Fuji Electric Co., Ltd.
- Takumi FUJIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...
- Publication number 20200303260
- Publication date Sep 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- YASUTOSHI OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...
- Publication number 20200303259
- Publication date Sep 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- YASUTOSHI OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL
- Publication number 20200158954
- Publication date May 21, 2020
- Douglas Coolbaugh
- G02 - OPTICS
Information Patent Application
INTEGRATED PHOTONICS INCLUDING GERMANIUM
- Publication number 20200026003
- Publication date Jan 23, 2020
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING EPITAXIAL SILICON WAFER
- Publication number 20190338443
- Publication date Nov 7, 2019
- SUMCO CORPORATION
- Masayuki TSUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190035691
- Publication date Jan 31, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- YASUTOSHI OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PHOTONICS INCLUDING GERMANIUM
- Publication number 20190025513
- Publication date Jan 24, 2019
- The Research Foundation for the State University of New York
- Douglas Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Heterojunction Solar Cells
- Publication number 20130180578
- Publication date Jul 18, 2013
- Crystal Solar, Incorporated
- Kramadhati V. Ravi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOCRYSTALLINE THREE-DIMENSIONAL INTEGRATED-CIRCUIT TECHNOLOGY
- Publication number 20010002650
- Publication date Jun 7, 2001
- RAYMOND M. WARNER
- H01 - BASIC ELECTRIC ELEMENTS

Epitaxial deposition of elements of the Fourth Group of the Periodic System

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including a Fin-FET and method of manufacturin...

Integrated photonics including waveguiding material

Semiconductor device including a Fin-FET and method of manufacturin...

Silicon carbide semiconductor device and method of manufacturing si...

Semiconductor device including a Fin-FET and method of manufacturin...

Method of producing epitaxial silicon wafer

Method of manufacturing a semiconductor on insulator type structure...

Smoothed doped layer for solar cell

Integrated photonics including germanium

Semiconductor device including a Fin-FET and method of manufacturin...

Integrated photonics including waveguiding material

Integrated photonics including germanium

Integrated method for wafer outgassing reduction

Method of doped germanium formation

Integrated photonics including germanium

Structures having isolated graphene layers with a reduced dimension

Methods for fabricating refined graphite-based structures and devic...

Semiconductor device comprising epitaxially grown semiconductor mat...

Silicon heterojunction solar cells

Semiconductor arrangement and formation thereof

Selective epitaxial overgrowth comprising air gaps

Monocrystalline three-dimensional integrated-circuit technology

Monocrystalline three-dimensional integrated circuit

Monocrystalline three-dimensional integrated circuit

Method of fabricating MOS field effect transistor

Bipolar transistor structure with self-aligned device and isolation...

High aspect ratio, high resolution mask fabrication

3108919

Patents Applicationslast 30 patents

METHODS FOR FORMING AN EPITAXIAL WAFER

SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...

SEMICONDUCTOR ON INSULATOR STRUCTURE FOR A FRONT SIDE TYPE IMAGER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...

SEMICONDUCTOR DEVICE INCLUDING A FIN-FET AND METHOD OF MANUFACTURIN...

INTEGRATED PHOTONICS INCLUDING WAVEGUIDING MATERIAL

INTEGRATED PHOTONICS INCLUDING GERMANIUM

METHOD OF PRODUCING EPITAXIAL SILICON WAFER

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

INTEGRATED PHOTONICS INCLUDING GERMANIUM

Silicon Heterojunction Solar Cells

MONOCRYSTALLINE THREE-DIMENSIONAL INTEGRATED-CIRCUIT TECHNOLOGY