Epitaxial-layer growth

Industry

CPC
C30B23/02

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B23/00Single-crystal growth by condensing evaporated or sublimed material

Current Industry

C30B23/02Epitaxial-layer growth

Industries

Patents Grantslast 30 patents

Information Patent Grant
Optoelectronic device formed on a flexible substrate
- Patent number 12,142,702
- Issue date Nov 12, 2024
- King Abdullah University of Science and Technology
- Xiao Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Large dimension silicon carbide single crystalline materials with r...
- Patent number 12,125,701
- Issue date Oct 22, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Metal oxide film, semiconductor device, and display device
- Patent number 12,098,458
- Issue date Sep 24, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of semi-insulating single-crystal silicon carb...
- Patent number 12,098,477
- Issue date Sep 24, 2024
- TAISIC MATERIALS CORP.
- Dai-Liang Ma
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide substrate
- Patent number 12,091,772
- Issue date Sep 17, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
- Patent number 12,071,706
- Issue date Aug 27, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,071,708
- Issue date Aug 27, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vanadium-compensated 4H and 6H single crystals of optical grade, an...
- Patent number 12,060,650
- Issue date Aug 13, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Method of manufacturing a piezoelectric thin film
- Patent number 12,063,023
- Issue date Aug 13, 2024
- WAVELORD CO., LTD.
- Sang Jeong An
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a mechanical vibrator comprising epitaxially g...
- Patent number 12,049,711
- Issue date Jul 30, 2024
- Nippon Telegraph and Telephone Corporation
- Koji Onomitsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide crystal manufacturing apparatus, control device of...
- Patent number 12,043,918
- Issue date Jul 23, 2024
- Denso Corporation
- Daisuke Uematsu
- G05 - CONTROLLING REGULATING
Information Patent Grant
Nondestructive characterization for crystalline wafers
- Patent number 12,040,355
- Issue date Jul 16, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laminate substrate, freestanding substrate, method for manufacturin...
- Patent number 12,040,362
- Issue date Jul 16, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi Noguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication of films having controlled stoichiometry using molecula...
- Patent number 12,037,700
- Issue date Jul 16, 2024
- PSIQUANTUM, CORP.
- Yong Liang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicon carbide wafer and method of manufacturing same
- Patent number 12,037,704
- Issue date Jul 16, 2024
- Senic Inc.
- Myung Ok Kyun
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,031,233
- Issue date Jul 9, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC semiconductor substrate, method for manufacturing same, and dev...
- Patent number 12,020,928
- Issue date Jun 25, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase epitaxial growth device
- Patent number 12,009,206
- Issue date Jun 11, 2024
- National University Corporation Nagoya University
- Shugo Nitta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing an aluminum doped silicon carbide crystal by p...
- Patent number 12,006,591
- Issue date Jun 11, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transparent conductive oxide thin film and use thereof
- Patent number 11,982,017
- Issue date May 14, 2024
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sc...
- Ruyi Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a monocrystalline layer of GaAs material a...
- Patent number 11,976,380
- Issue date May 7, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate manufacturing device applicable to large-di...
- Patent number 11,955,354
- Issue date Apr 9, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer manufacturing method, epitaxial wafer manufacturing method, a...
- Patent number 11,939,698
- Issue date Mar 26, 2024
- SENIC INC.
- Jong Hwi Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal manufacturing method, SiC single crystal manufac...
- Patent number 11,932,967
- Issue date Mar 19, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a monocrystalline layer of diamond or irid...
- Patent number 11,935,743
- Issue date Mar 19, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...
- Publication number 20240352617
- Publication date Oct 24, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya ZWIEBACK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
NONDESTRUCTIVE CHARACTERIZATION FOR CRYSTALLINE WAFERS
- Publication number 20240332352
- Publication date Oct 3, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...
- Publication number 20240332362
- Publication date Oct 3, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
SiC CRYSTAL GROWTH APPARATUS AND METHOD
- Publication number 20240328031
- Publication date Oct 3, 2024
- SK Siltron CSS, LLC
- Andrey SOUKHOJAK
- C30 - CRYSTAL GROWTH
Information Patent Application
BISMUTH-BASED CO-CATALYST ARRANGEMENT
- Publication number 20240301573
- Publication date Sep 12, 2024
- The Regents of the University of Michigan
- Zetian Mi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...
- Publication number 20240297069
- Publication date Sep 5, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...
- Publication number 20240287705
- Publication date Aug 29, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON-COATED COPPER, SILICON-COATED ANTI...
- Publication number 20240250049
- Publication date Jul 25, 2024
- Pusan National University Industry-University Cooperation Foundation
- Se Young JEONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EPITAXIAL NITRIDE FERROELECTRONICS
- Publication number 20240242963
- Publication date Jul 18, 2024
- The Regents of the University of Michigan
- Zetian Mi
- C30 - CRYSTAL GROWTH
Information Patent Application
HYBRID PULSED LASER DEPOSITION OF COMPLEX OXIDE THIN FILMS MADE FRO...
- Publication number 20240229292
- Publication date Jul 11, 2024
- Wisconsin Alumni Research Foundation
- Chang-Beom Eom
- C30 - CRYSTAL GROWTH
Information Patent Application
High Sb Concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs Core-Shell-Shell...
- Publication number 20240218563
- Publication date Jul 4, 2024
- North Carolina A&T State University
- Shanthi Iyer
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYER TRANSFER PROCESS
- Publication number 20240188444
- Publication date Jun 6, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Florian DUPONT
- C30 - CRYSTAL GROWTH
Information Patent Application
MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME
- Publication number 20240158954
- Publication date May 16, 2024
- TOSOH CORPORATION
- Yuya TSUCHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANI...
- Publication number 20240117521
- Publication date Apr 11, 2024
- The Trustees of Princeton University
- Barry Rand
- C30 - CRYSTAL GROWTH
Information Patent Application
Deposition Of Piezoelectric Films
- Publication number 20240114800
- Publication date Apr 4, 2024
- Applied Materials, Inc.
- Vijay Bhan Sharma
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...
- Publication number 20240105782
- Publication date Mar 28, 2024
- TANKEBLUE SEMICONDUCTOR CO., LTD.
- Yanfang LOU
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...
- Publication number 20240076799
- Publication date Mar 7, 2024
- SENIC Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for producing silicon carbide crystal
- Publication number 20240068124
- Publication date Feb 29, 2024
- HERMES-EPITEK CORP.
- CHIH-LUNG LIN
- C30 - CRYSTAL GROWTH
Information Patent Application
SIMULTANEOUS GROWTH OF TWO SILICON CARBIDE LAYERS
- Publication number 20240068127
- Publication date Feb 29, 2024
- KISELKARBID I STOCKHOLM AB
- Lin DONG
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHO...
- Publication number 20240060212
- Publication date Feb 22, 2024
- Senic Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
Technique for Forming Cubic Silicon Carbide and Heterojunction Sili...
- Publication number 20240047207
- Publication date Feb 8, 2024
- Christian Zmoelnig
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF USING SIC CONTAINER
- Publication number 20240044042
- Publication date Feb 8, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240035153
- Publication date Feb 1, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C01 - INORGANIC CHEMISTRY
Information Patent Application
NEW TRANSPARENT CONDUCTIVE OXIDE THIN FILM AND USE THEREOF
- Publication number 20240003051
- Publication date Jan 4, 2024
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of...
- Ruyi ZHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...
- Publication number 20240003054
- Publication date Jan 4, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCRE...
- Publication number 20230416939
- Publication date Dec 28, 2023
- SiCrystal GmbH
- Bernhard ECKER
- C01 - INORGANIC CHEMISTRY
Information Patent Application
WATER SPLITTING DEVICE PROTECTION
- Publication number 20230407498
- Publication date Dec 21, 2023
- The Regents of the University of Michigan
- Zetian Mi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEMS AND METHODS FOR PULSED BEAM DEPOSITION OF EPITAXIAL CRYSTAL...
- Publication number 20230399767
- Publication date Dec 14, 2023
- Paul COLOMBO
- C30 - CRYSTAL GROWTH

Epitaxial-layer growth

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optoelectronic device formed on a flexible substrate

Large dimension silicon carbide single crystalline materials with r...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Silicon carbide substrate

Metal oxide film, semiconductor device, and display device

Manufacturing method of semi-insulating single-crystal silicon carb...

Silicon carbide substrate

SiC composite substrate including biaxially oreinted SiC layer and...

Process for producing a monoocrystalline layer of AlN material by t...

Silicon carbide substrate

Vanadium-compensated 4H and 6H single crystals of optical grade, an...

Method of manufacturing a piezoelectric thin film

Large diameter silicon carbide wafers

Method for producing a mechanical vibrator comprising epitaxially g...

Silicon carbide crystal manufacturing apparatus, control device of...

Nondestructive characterization for crystalline wafers

Laminate substrate, freestanding substrate, method for manufacturin...

Fabrication of films having controlled stoichiometry using molecula...

Silicon carbide wafer and method of manufacturing same

Silicon carbide substrate

SiC semiconductor substrate, method for manufacturing same, and dev...

Vapor phase epitaxial growth device

Method for preparing an aluminum doped silicon carbide crystal by p...

Transparent conductive oxide thin film and use thereof

Method for manufacturing a monocrystalline layer of GaAs material a...

Silicon carbide crystal

Semiconductor substrate manufacturing device applicable to large-di...

Wafer manufacturing method, epitaxial wafer manufacturing method, a...

SiC single crystal manufacturing method, SiC single crystal manufac...

Method for manufacturing a monocrystalline layer of diamond or irid...

Patents Applicationslast 30 patents

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...

LARGE DIAMETER SILICON CARBIDE WAFERS

NONDESTRUCTIVE CHARACTERIZATION FOR CRYSTALLINE WAFERS

LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...

SiC CRYSTAL GROWTH APPARATUS AND METHOD

BISMUTH-BASED CO-CATALYST ARRANGEMENT

COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...

METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...

METHOD FOR MANUFACTURING SILICON-COATED COPPER, SILICON-COATED ANTI...

EPITAXIAL NITRIDE FERROELECTRONICS

HYBRID PULSED LASER DEPOSITION OF COMPLEX OXIDE THIN FILMS MADE FRO...

High Sb Concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs Core-Shell-Shell...

LAYER TRANSFER PROCESS

MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME

METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANI...

Deposition Of Piezoelectric Films

MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...

WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...

Apparatus for producing silicon carbide crystal

SIMULTANEOUS GROWTH OF TWO SILICON CARBIDE LAYERS

SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHO...

Technique for Forming Cubic Silicon Carbide and Heterojunction Sili...

METHOD OF USING SIC CONTAINER

Method and Device for Producing a SiC Solid Material

NEW TRANSPARENT CONDUCTIVE OXIDE THIN FILM AND USE THEREOF

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCRE...

WATER SPLITTING DEVICE PROTECTION

SYSTEMS AND METHODS FOR PULSED BEAM DEPOSITION OF EPITAXIAL CRYSTAL...