Feed and outlet means for the gases Modifying the flow of the gases

Industry

CPC
C30B31/16

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure Apparatus therefor

Current Industry

C30B31/16Feed and outlet means for the gases Modifying the flow of the gases

Industries

Patents Grantslast 30 patents

Information Patent Grant
System based on low-pressure chemical vapor deposition for fabricat...
- Patent number 10,975,498
- Issue date Apr 13, 2021
- OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Yabing Qi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Atomic layer deposition method
- Patent number 10,858,736
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Yi Chuang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Inject insert for EPI chamber
- Patent number 10,760,161
- Issue date Sep 1, 2020
- Applied Materials, Inc.
- Shu-Kwan Lau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas supply pipe, and gas treatment equipment
- Patent number 10,364,498
- Issue date Jul 30, 2019
- Kabushiki Kaisha Toshiba
- Takahiro Terada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrate treating apparatus
- Patent number 10,208,401
- Issue date Feb 19, 2019
- Samsung Electronics Co., Ltd.
- Keum Seok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method
- Patent number 9,945,048
- Issue date Apr 17, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sen-Hong Syue
- C30 - CRYSTAL GROWTH
Information Patent Grant
Atomic layer deposition apparatus and method
- Patent number 9,512,519
- Issue date Dec 6, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Yi Chuang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Device for doping, deposition or oxidation of semiconductor materia...
- Patent number 8,460,468
- Issue date Jun 11, 2013
- Centrotherm Photovoltaics AG
- Alexander Piechulla
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal processing furnace, gas delivery system therefor, and metho...
- Patent number 7,910,494
- Issue date Mar 22, 2011
- Tokyo Electron Limited
- Anthony Dip
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diffusion system
- Patent number 7,452,423
- Issue date Nov 18, 2008
- Samsung Electronics Co., Ltd.
- Jun-young Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Conductor treating single-wafer type treating device and method for...
- Patent number 7,235,137
- Issue date Jun 26, 2007
- Tokyo Electron Limited
- Hirofumi Kitayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method of fast ambient switching for rapid thermal proce...
- Patent number 6,753,506
- Issue date Jun 22, 2004
- Axcelis Technologies
- Yong Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for positioning gas injectors in a vertical fu...
- Patent number 6,435,865
- Issue date Aug 20, 2002
- Taiwan Semiconductor Manufacturing Co., Ltd
- Heng-Yi Tseng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing thin films using current of process gas and ine...
- Patent number 6,413,884
- Issue date Jul 2, 2002
- NEC Corporation
- Tsuyoshi Moriyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for purging a furnace and furnace assembly
- Patent number 6,413,081
- Issue date Jul 2, 2002
- Pieter Johannes Quintus Van Voorst Vader
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device manufacturing apparatus and semiconductor devi...
- Patent number 6,391,116
- Issue date May 21, 2002
- NEC Corporation
- Tsuyoshi Moriyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device manufacturing apparatus and semiconductor devi...
- Patent number 6,348,417
- Issue date Feb 19, 2002
- NEC Corporation
- Tsuyoshi Moriyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Drafting apparatus
- Patent number 6,308,738
- Issue date Oct 30, 2001
- United Microelectronics Corp.
- Tien-Jui Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vented lower liner for heating exhaust gas from a single substrate...
- Patent number 6,254,686
- Issue date Jul 3, 2001
- Applied Materials, Inc.
- Paul B. Comita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal processor and components thereof
- Patent number 6,191,388
- Issue date Feb 20, 2001
- Semitool, Inc.
- Mark P. Cleaver
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heating exhaust gas in a substrate reactor
- Patent number 6,153,260
- Issue date Nov 28, 2000
- Applied Materials, Inc.
- Paul B. Comita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Drafting apparatus
- Patent number 6,109,915
- Issue date Aug 29, 2000
- United Microelectronics Corp.
- Tien-Jui Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multi-zone gas flow control in a process chamber
- Patent number 6,090,210
- Issue date Jul 18, 2000
- Applied Materials, Inc.
- David S. Ballance
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for the in-situ generation of dopants
- Patent number 6,001,172
- Issue date Dec 14, 1999
- Advanced Technology Materials, Inc.
- Gautam Bhandari
- C30 - CRYSTAL GROWTH
Information Patent Grant
Conical baffle for semiconductor furnaces
- Patent number 5,961,725
- Issue date Oct 5, 1999
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ying-Lang Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process tube with in-situ gas preheating
- Patent number 5,948,300
- Issue date Sep 7, 1999
- Kokusai BTI Corporation
- Lawrence R. Gero
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diffusion furnace used for semiconductor device manufacturing process
- Patent number 5,902,102
- Issue date May 11, 1999
- Samsung Electronics Co., Ltd.
- Ki-hum Nam
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vertical furnace of a semiconductor manufacturing apparatus and a b...
- Patent number 5,902,103
- Issue date May 11, 1999
- Kokusai Electric Co., Ltd.
- Kiyohiko Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Diffusion furnace system for preventing gas leakage
- Patent number 5,883,919
- Issue date Mar 16, 1999
- Vanguard International Semiconductor Corporation
- Cheng-Chang Hung
- C30 - CRYSTAL GROWTH
Information Patent Grant
Effluent-gas-scavenger system for process tube, minimizing back dif...
- Patent number 5,860,805
- Issue date Jan 19, 1999
- Lansense, LLC
- Donald G. Landis
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE TREATING APPARATUS
- Publication number 20180266017
- Publication date Sep 20, 2018
- Samsung Electronics Co., Ltd.
- KEUM SEOK PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD BASED ON LOW-PRESSURE CHEMICAL VAPOR DEPOSITION F...
- Publication number 20170268128
- Publication date Sep 21, 2017
- OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Yabing QI
- C30 - CRYSTAL GROWTH
Information Patent Application
ATOMIC LAYER DEPOSITION APPARATUS AND METHOD
- Publication number 20140154414
- Publication date Jun 5, 2014
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Chia-Yi CHUANG
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE FOR DOPING, DEPOSITION OR OXIDATION OF SEMICONDUCTOR MATERIA...
- Publication number 20130025539
- Publication date Jan 31, 2013
- Centrotherm Photovoltaics AG
- Alexander PIECHULLA
- C30 - CRYSTAL GROWTH
Information Patent Application
Gas supply system and gas supply accumulation unit of semiconductor...
- Publication number 20080295963
- Publication date Dec 4, 2008
- TOKYO ELECTRON LIMITED
- Shuji Moriya
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE FOR DOPING, DEPOSITION OR OXIDATION OF SEMICONDUCTOR MATERIA...
- Publication number 20080292430
- Publication date Nov 27, 2008
- Centrotherm Photovoltaics AG
- Alexander PIECHULLA
- C30 - CRYSTAL GROWTH
Information Patent Application
Selective Doping of a Material
- Publication number 20080038524
- Publication date Feb 14, 2008
- Beneq Oy
- Markku Rajala
- C30 - CRYSTAL GROWTH
Information Patent Application
THERMAL PROCESSING FURNACE, GAS DELIVERY SYSTEM THEREFOR, AND METHO...
- Publication number 20070231757
- Publication date Oct 4, 2007
- TOKYO ELECTRON LIMITED
- Anthony Dip
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Doping Material and Doped Material
- Publication number 20070218290
- Publication date Sep 20, 2007
- Beneq Oy
- Markku Rajala
- C30 - CRYSTAL GROWTH
Information Patent Application
Diffusion system
- Publication number 20050092244
- Publication date May 5, 2005
- Samsung Electronics Co., Ltd.
- Jun-young Kim
- C30 - CRYSTAL GROWTH
Information Patent Application
Conductor treating single-wafer type treating device and method for...
- Publication number 20040097088
- Publication date May 20, 2004
- Hirofumi Kitayama
- C30 - CRYSTAL GROWTH
Information Patent Application
System and method of fast ambient switching for rapid thermal proce...
- Publication number 20030038127
- Publication date Feb 27, 2003
- Yong Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Apparatus for producing thin films
- Publication number 20020124800
- Publication date Sep 12, 2002
- NEC Corporation
- Tsuyoshi Moriyama
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING THIN FILMS USING CURRENT OF PROCESS GAS AND INE...
- Publication number 20020048860
- Publication date Apr 25, 2002
- TSUYOSHI MORIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
HEATING INSTALLATION FOR A REACTOR
- Publication number 20020002951
- Publication date Jan 10, 2002
- VLADIMIR IVANOVICH KUZNETSOV
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVI...
- Publication number 20010050052
- Publication date Dec 13, 2001
- TSUYOSHI MORIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for purging a furnace and furnace assembly
- Publication number 20010016306
- Publication date Aug 23, 2001
- Pieter Johannes Quintus Van Voorst Vader
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Feed and outlet means for the gases Modifying the flow of the gases

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

System based on low-pressure chemical vapor deposition for fabricat...

Atomic layer deposition method

Inject insert for EPI chamber

Gas supply pipe, and gas treatment equipment

Substrate treating apparatus

Semiconductor structure and method

Atomic layer deposition apparatus and method

Device for doping, deposition or oxidation of semiconductor materia...

Thermal processing furnace, gas delivery system therefor, and metho...

Diffusion system

Conductor treating single-wafer type treating device and method for...

System and method of fast ambient switching for rapid thermal proce...

Apparatus and method for positioning gas injectors in a vertical fu...

Method of producing thin films using current of process gas and ine...

Method for purging a furnace and furnace assembly

Semiconductor device manufacturing apparatus and semiconductor devi...

Semiconductor device manufacturing apparatus and semiconductor devi...

Drafting apparatus

Vented lower liner for heating exhaust gas from a single substrate...

Thermal processor and components thereof

Method for heating exhaust gas in a substrate reactor

Drafting apparatus

Multi-zone gas flow control in a process chamber

Apparatus and method for the in-situ generation of dopants

Conical baffle for semiconductor furnaces

Process tube with in-situ gas preheating

Diffusion furnace used for semiconductor device manufacturing process

Vertical furnace of a semiconductor manufacturing apparatus and a b...

Diffusion furnace system for preventing gas leakage

Effluent-gas-scavenger system for process tube, minimizing back dif...

Patents Applicationslast 30 patents

SUBSTRATE TREATING APPARATUS

SYSTEM AND METHOD BASED ON LOW-PRESSURE CHEMICAL VAPOR DEPOSITION F...

ATOMIC LAYER DEPOSITION APPARATUS AND METHOD

DEVICE FOR DOPING, DEPOSITION OR OXIDATION OF SEMICONDUCTOR MATERIA...

Gas supply system and gas supply accumulation unit of semiconductor...

DEVICE FOR DOPING, DEPOSITION OR OXIDATION OF SEMICONDUCTOR MATERIA...

Selective Doping of a Material

THERMAL PROCESSING FURNACE, GAS DELIVERY SYSTEM THEREFOR, AND METHO...

Method for Doping Material and Doped Material

Diffusion system

Conductor treating single-wafer type treating device and method for...

System and method of fast ambient switching for rapid thermal proce...

Apparatus for producing thin films

METHOD OF PRODUCING THIN FILMS USING CURRENT OF PROCESS GAS AND INE...

HEATING INSTALLATION FOR A REACTOR

SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVI...

Method for purging a furnace and furnace assembly